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  • THS309x 高电压、低失真、电流反馈运算放大器

    • ZHCSRC5K september   2003  – april 2023 THS3091 , THS3095

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  • THS309x 高电压、低失真、电流反馈运算放大器
  1. 1 特性
  2. 2 应用
  3. 3 描述
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = ±15 V
    6. 7.6 Electrical Characteristics: VS = ±5 V
    7. 7.7 Typical Characteristics: ±15 V
    8. 7.8 Typical Characteristics: ±5 V
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-Down and Reference Pins Functionality
    4. 8.4 Device Functional Modes
      1. 8.4.1 Wideband, Noninverting Operation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 PowerPAD Design Considerations
          1. 9.4.1.1.1 PowerPAD Layout Considerations
        2. 9.4.1.2 Power Dissipation and Thermal Considerations
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 接收文档更新通知
    4. 10.4 支持资源
    5. 10.5 Trademarks
    6. 10.6 静电放电警告
    7. 10.7 术语表
  11. 11Mechanical, Packaging, and Orderable Information
  12. 重要声明
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DATA SHEET

THS309x 高电压、低失真、电流反馈运算放大器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 低失真：
    • 在 10MHz、RL = 1kΩ 下为 84dBc HD2
    • 在 10MHz、RL = 1kΩ 下为 99dBc HD3
  • 低噪声：
    • 15pA/√Hz 同相电流噪声
    • 14pA/√Hz 反相电流噪声
    • 1.1nV/√Hz 电压噪声
  • 高压摆率：6000V/μs（G = 5，VO = 20VPP）
  • 宽带宽：305MHz（G = 2，RL = 100Ω）
  • 高输出电流驱动：±310mA
  • 宽电源电压范围：±5V 至 ±16V
  • 断电特性：仅 THS3095

2 应用

  • 高电压任意波形发生器
  • 引脚驱动器
  • 功率 FET 驱动器
  • 源测量单元 (SMU)
  • 高容性负载压电元件驱动器
GUID-20230208-SS0I-RN1C-DLTF-MV4NTHBF1DZX-low.svgHD2 和 HD3 与频率间的关系（RL = 100Ω 时）

3 描述

THS3091 和 THS3095 (THS309x) 是高电压、低失真、电流反馈、高速放大器，可在 ±5V 至 ±16V 的宽电源电压范围内运行。这几款器件非常适合需要线性输出大信号的应用（如引脚驱动器、功率 FET 驱动器和任意波形发生器）。

THS3095 具有一个断电引脚 (PD)，可将放大器置于低功耗待机模式，并将静态电流从 9.5mA 降至 500μA。

THS309x 具有 32V 的宽电源电压范围、6000V/µs 的压摆率和 310mA 的输出电流驱动能力，非常适合高电压任意波形驱动器应用。此外，这些器件能够处理大电压摆幅，驱动低阻性和高容性负载，同时保持良好的稳定时间性能，因此非常适合引脚驱动器和功率 FET 驱动器应用。

THS309x 采用 8 引脚 SOIC (DDA) PowerPAD™ 集成电路封装。THS3091 还可采用 8 引脚 HVSSOP (DGN) 封装。

器件信息(1)2
器件型号 PD PIN 封装
THS3091 否 DDA（SO PowerPAD，8）
DGN（HVSSOP，8）
THS3095 是 DDA（SO PowerPAD，8）
(1) 如需了解所有可用封装，请参见数据表末尾的可订购产品附录。
(2) 有关详细信息，请参阅器件比较表。

 

GUID-20230213-SS0I-FBQR-BC8P-BP3GRL3P8QPS-low.svg典型的任意波形发生器输出驱动电路

4 Revision History

Changes from Revision J (February 2023) to Revision K (April 2023)

  • 将 THS3091 DGN 封装状态从预发布更改为量产数据（正在供货）并添加了相关内容Go
  • Changed voltage step from 10 V to 20 V for slew rate parameter in Electrical Characteristics: VS = ± 15 V table.Go
  • Added Functional Block Diagram sectionGo

Changes from Revision I (December 2022) to Revision J (February 2023)

  • 更新了特性 部分Go
  • 更新了说明 部分Go
  • Updated the Device Comparison Table sectionGo
  • Removed D package information from the data sheetGo
  • Removed continuous power dissipation specification from Absolute Maximum Ratings table Go
  • Updated ESD Ratings tableGo
  • Updated Thermal Information tableGo
  • Changed Electrical Characteristics THS3091 table to Electrical Characteristics: VS = ±15 V Go
  • Updated small signal bandwidth, -3 dB specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Added small signal bandwidth, -3 dB specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tables at G=1 for DGN packageGo
  • Removed slew rate (25% to 75% level) specifications from Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Added slew rate (10% to 90% level) specifications to Electrical Characteristics:VS = ±15 V and Electrical Characteristics:VS = ±5 V tables Go
  • Updated rise and fall time specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated settling time specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated distortion specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated input voltage noise specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated input current noise specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Removed differential gain and differential phase specifications from Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated transimpendance specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Removed specifications with TA = 0℃ to 70℃ test conditions in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated max input voltage specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated max inverting input bias current specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated max input offset current drift specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated average offset voltage drift specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated average bias current drift specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated average offset current drift specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated common-mode rejection ratio specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated noninverting input resistance and capacitance specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated output current specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Removed specified operating voltage specifications from Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Updated power supply rejection specifications in Electrical Characteristics: VS = ±15 V and Electrical Characteristics: VS = ±5 V tablesGo
  • Changed Electrical Characteristics THS3095 to Electrical Characteristics: VS = ±5V Go
  • Removed Dissipation Ratings tableGo
  • Updated Typical Characteristics (±15 V) sectionGo
  • Updated Typical Characteristics: (±5 V) sectionGo
  • Updated Feature Description sectionGo
  • Updated Device Functional Modes sectionGo
  • Updated Wideband, Noninverting Operation sectionGo
  • Updated Application and Implementation sectionGo
  • Updated Typical Application sectionGo
  • Updated Layout sectionGo

Changes from Revision H (October 2015) to Revision I (December 2022)

  • 更新了整个文档中的表格、图和交叉参考的编号格式Go
  • 向数据表添加了 DGN 封装信息Go
  • Added the Device Comparison Table sectionGo
  • Updated Thermal Information tableGo

5 Device Comparison Table

DEVICE MAX SUPPLY, VS
(V)		 SSBW,
AV = 5
(MHz)		 MAXIMUM ICC AT 25°C
(mA)		 INPUT NOISE Vn
(nV/√Hz)		 SLEW RATE
(V/µs)		 LINEAR OUTPUT CURRENT (mA)
THS3491 ±16 900 17.3 1.7 8000 ±420
THS3095 ±16 205 10.5 1.1 6000 ±310
OPA695 ±6 700 (AV = 4) 13.3 1.8 4300 ±90
THS3001 ±16 350 7.5 1.6 6300 ±120
THS3115 ±15 100 (AV = 4) 5.5 2.2 1550 ±270

6 Pin Configuration and Functions

GUID-69936FDE-DC5E-4C04-BBBC-3C869368624D-low.gifFigure 6-1 DGN or DDA Package,
8-Pin SOIC, HVSSOP or SO-PowerPAD
THS3091 (Top View)
GUID-4C794F08-3967-4FEB-B995-F59B1D224552-low.gifFigure 6-2 DDA Package,
SO-PowerPAD
THS3095 (Top View)
Table 6-1 Pin Functions
PIN TYPE(1) DESCRIPTION
NAME NO.
THS3091 THS3095
NC 1, 5, 8 5 — No connection
PD — 8 I Amplifier power down
Low = amplifier disabled
High (default) = amplifier enabled
REF — 1 I Voltage reference input to set PD threshold level
VIN– 2 2 I Inverting input
VIN+ 3 3 I Noninverting input
VOUT 6 6 O Output of amplifier
VS– 4 4 P Negative power supply
VS+ 7 7 P Positive power supply
(1) I= input, O = output, POW= power, and NC = no internal connection

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VS Supply voltage 33 V
VI Input voltage ±VS V
VID Differential input voltage ±4 V
IO Output current 350 mA
TJ(2) Junction temperature Maximum 150 °C
Continuous operation, long-term reliability 125
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature can result in reduced reliability, reduced lifetime of the device, or both.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

 
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