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  • 《THS413x 高速、低噪声、全差分 I/O 放大器》

    • ZHCSOD5L April   2000  – August 2023 THS4130 , THS4131

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  • 《THS413x 高速、低噪声、全差分 I/O 放大器》
  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Mode
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Output Common-Mode Voltage
        1. 9.1.1.1 Resistor Matching
      2. 9.1.2 Driving a Capacitive Load
      3. 9.1.3 Data Converters
      4. 9.1.4 Single-Supply Applications
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 PowerPAD™ Integrated Circuit Package Design Considerations
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Mechanical, Packaging, and Orderable Information
  13. 重要声明
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Data Sheet

《THS413x 高速、低噪声、全差分 I/O 放大器》

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 高性能
    • 带宽：170MHz（VCC = ±15V，G = 1V/V）
    • 压摆率：51 V/µs
    • 增益带宽积：215 MHz
    • 失真：–102dBc THD（2VPP、250kHz 时）
  • 电压噪声
    • 1/f 电压噪声拐角频率：350 Hz
    • 输入基准噪声 1.25nV/√Hz
  • 单电源工作电压范围：5 V 至 30 V
  • 静态电流（关断）：860µA (THS4130)
  • 温度范围：–40°C 至 +85°C
  • 封装：PowerPAD™ HVSSOP-8、SOIC-8、VSSOP-8

2 应用

  • 单端至差分转换
  • 差分 ADC 驱动器
  • 差分抗混叠
  • 差分发送器和接收器
  • 输出电平转换器
  • 医疗超声波

3 说明

THS4130 和 THS4131 器件 (THS413x) 是使用德州仪器 (TI) 先进的高压互补双极工艺制造的全差分输入/输出放大器系列。

THS413x 使用从输入到输出的真正全差分信号路径，提供高达 ±15V 的高电源电压。这种设计带来了出色的共模噪声抑制能力（800kHz 时为 95dB）和总谐波失真（2VPP、250kHz 时为 −102dBc）。高电压差分信号链可通过宽电源电压范围提高裕量和动态范围，而无需为差分信号的每个极性添加单独的放大器。

THS413x 具有 –40°C 至 +85°C 的宽额定运行温度范围。

器件信息
器件型号(1) 关断引脚 封装(2)
THS4130 是 D（SOIC，8）、
DGK（VSSOP，8）、
DGN（HVSSOP，8）
THS4131 否
(1) 请参阅器件比较表。
(2) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。

 

GUID-20211216-SS0I-0PZ4-CGQ4-SHSVCFLG7QTW-low.svg适用于超声波的
时间增益控制 DAC 参考设计
GUID-20211207-SS0I-X9Q0-VRMQ-SM34T7MVNLGR-low.svg
VOUT = 2VPP
总谐波失真与频率间的关系

4 Revision History

Changes from Revision K (August 2022) to Revision L (August 2023)

  • Changed MSOP and MSOP-PowerPad to VSSOP and HVSSOP in Thermal Information tableGo
  • Changed thermal specifications for DGN package in Thermal Information tableGo
  • Changed the Electrical Characteristics section to combine both Electrical Characteristics tables into one table with improved small-signal bandwidth, slew rate, settling time, total harmonic distortion (THD), spurious-free dynamic range (SFDR), voltage noise, offset voltage drift, output swing, and quiescent current parameters for the DGN package.Go
  • Changed input current noise typical from 1.3 pA/√Hz to 1.7 pA/√Hz for DGN package.Go
  • Changed common-mode input offset voltage maximum from 3.5 mV to 5.5 mV for DGN package.Go
  • Changed maximum input bias current from 6 µA to 15.4 µA for DGN packageGo
  • Changed single input resistance parameter into seperate common-mode and differential input resistance parameters for DGN packageGo
  • Changed Typical Characteristics: THS413xD, THS413xDGK title to Typical Characteristics and deleted obsolete Typical Characteristics: THS413xDGN section; all plots now in one sectionGo

Changes from Revision J (March 2022) to Revision K (August 2022)

  • Updated thermal specifications for DGK package in Thermal Information tableGo
  • Changed title of Electrical Characteristics: THS413xD to Electrical Characteristics: THS413xD, THS413xDGK Go
  • Changed title of Typical Characteristics: THS413xD to Typical Characteristics: THS413xD, THS413xDGK Go

5 Device Comparison Table

TA D (SOIC, 8) DGK (VSSOP, 8) DGN (HVSSOP, 8)
0°C to +70°C THS4130CD THS4130CDGK THS4130CDGN
THS4131CD THS4131CDGK THS4131CDGN
–40°C to +85°C THS4130ID THS4130IDGK THS4130IDGN
THS4131ID THS4131IDGK THS4131IDGN

6 Pin Configuration and Functions

GUID-20211213-SS0I-BWPT-MX2W-RXH19LBGCN6D-low.svgFigure 6-1 D Package, 8-Pin SOIC,
DGK Package, 8-pin VSSOP,
DGN Package, 8-Pin HVSSOP
THS4130 (Top View)
GUID-20211213-SS0I-GLPZ-WR5Q-DGD6GRGRDSXV-low.svgFigure 6-2 D Package, 8-Pin SOIC,
DGK Package, 8-pin VSSOP,
DGN Package, 8-Pin HVSSOP
THS4131 (Top View)
Table 6-1 Pin Functions
PIN TYPE(1) DESCRIPTION
NAME NO.
THS4130 THS4131
NC — 7 — No connect
PD 7 — I Active low power-down pin
VCC+ 3 3 I/O Positive supply voltage pin
VCC– 6 6 I/O Negative supply voltage pin
VIN– 1 1 I Negative input pin
VOCM 2 2 I Common mode input pin
VOUT+ 4 4 O Positive output pin
VOUT– 5 5 O Negative output pin
VIN+ 8 8 I Positive input pin
Thermal Pad Thermal Pad Thermal Pad __ Thermal pad. DGN (HVSSOP) package only. For the best thermal performance, connect the thermal pad to a large copper plane. This pad is electrically isolated from the die so the pad can be connected to any pin on the package.
(1) I = input, O = output.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VI Input voltage –VCC +VCC V
VCC– to VCC+ Supply voltage 33 V
Supply turn on and turn off dV/dT(2) 1.7
V/µs
IO Output current(3) 150 mA
VID Differential input voltage −1.5 1.5 V
IIN Continuous input current 10 mA
TJ Junction temperature 150 °C
Junction temperature, continuous operation, long-term reliability(4) 125 °C
TA Ambient temperature C-suffix 0 70 °C
I-suffix –40 85 °C
Tstg Storage temperature –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) Stay below this specification to make sure that the edge-triggered ESD absorption devices across the supply pins remain off.
(3) Some of the THS413x packages incorporate a thermal pad on the underside of the chip. This thermal pad acts as a heat sink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so can result in exceeding the maximum junction temperature which can permanently damage the device. See TI technical briefs SLMA002 and SLMA004 for more information about using the PowerPAD integrated circuit package.
(4) The maximum junction temperature for continuous operation is limited by package constraints. Operation greater than this temperature can result in reduced reliability, reduced lifetime of the device, or both.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage Dual supply ±2.5 ±15 V
Single supply 5 30
TA Operating free-air temperature C-suffix device 0 70 °C
I-suffix device –40 85

7.4 Thermal Information

THERMAL METRIC(1) THS413x UNIT
D (SOIC) DGK (VSSOP) DGN (HVSSOP)
8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 126.3 147.3 57.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 67.3 37.9 76.3 °C/W
RθJB Junction-to-board thermal resistance 69.8 83.2 30.0 °C/W
ψJT Junction-to-top characterization parameter 19.5 0.9 4.0 °C/W
ψJB Junction-to-board characterization parameter 69.0 81.6 29.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A 14.3 °C/W
(1) For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

at VCC = ±5 V, gain = 1 V/V, RF = 390 Ω, RL = 800 Ω, and TA = +25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DYNAMIC PERFORMANCE
SSBW Small-signal bandwidth (–3 dB) VI = 63 mVPP, gain = 1,
RF = 390 Ω, single-ended
input, differential output		 VCC = 5 V 165 MHz
VCC = ±5 V 166
VCC = ±15 V 170
VI = 63 mVPP, gain = 2,
RF = 750 Ω, single-ended
input, differential output		 VCC = 5 V 97
VCC = ±5 V 98
VCC = ±15 V 100
SR Slew rate(2) 67 V/µs
ts Settling time To 0.1% Step voltage = 2 V, gain = 1 39 ns
To 0.01% Step voltage = 2 V, gain = 1 61
DISTORTION PERFORMANCE
THD Total harmonic distortion VCC = 5 V, VO = 2 VPP, differential input/output f = 250 kHz –101 dBc
f = 1 MHz –87
VCC = ±5 V, VO = 2 VPP, differential input/output f = 250 kHz –100
f = 1 MHz –87
VCC = ±15 V, VO = 2 VPP, differential input/output f = 250 kHz –102
f = 1 MHz –88
VCC = ±5 V, VO = 4 VPP, differential input/output f = 250 kHz –94
f = 1 MHz –79
VCC = ±15 V, VO = 4 VPP, differential input/output f = 250 kHz –95
f = 1 MHz –80
SFDR Spurious-free dynamic range VO= 2 VPP, f = 250 kHz, differential input/output VCC = ±2.5 103 dBc
VCC = ±5 106
VCC = ±15 108
VO = 4 VPP, f = 250 kHz, differential input/output VCC = ±5 98
VCC = ±15 100
IMD3 Third intermodulation distortion VI(PP) = 4 V, F1 = 3 MHz, F2 = 3.5 MHz –53 dBc
OIP3 Third-order intercept VI(PP) = 4 V, F1 = 3 MHz, F2 = 3.5 MHz 41.5 dB
NOISE PERFORMANCE
Vn Input voltage noise f = 10 kHz 1.25 nV/√Hz
In Input current noise f = 10 kHz 1.7 pA/√Hz
DC PERFORMANCE
AOL Open-loop gain TA = 25°C 71 78 dB
TA = full range 69
VOS Input offset voltage TA = 25°C ±0.2 2 mV
TA = full range(1) 3
Common-mode input offset voltage Referred to VOCM 0.2 5.5 mV
Input offset voltage drift TA = full range(1) 2 µV/°C
IIB Input bias current TA = full range(1) 5 15.4 µA
IOS Input offset current TA = full range(1) 100 500 nA
Input offset current drift 1 nA/°C
INPUT CHARACTERISTICS
CMRR Common-mode rejection ratio TA = full range(1)
 80 95 dB
VICM Common-mode input voltage –3.77 to 4.3 –4 to 4.5 V
RI_CM Common-mode input resistance Measured into each input pin 215 MΩ
RI_DIFF Differential input resistance Measured into each input pin 10 kΩ
CI_CM Common-mode input capacitance  Measured into each input pin, closed loop 1.4 pF
CI_DIFF Differential input capacitance Measured into each input pin, closed loop 2.5
OUTPUT CHARACTERISTICS
RO Output resistance Open loop 41 Ω
Output voltage swing VCC = 5 V, RL = 1 kΩ TA = 25°C 1.2 to 3.8 0.9 to 4.1 V
TA = full range(1) 1.3 to 3.7 ±4
VCC = ±5 V, RL = 1 kΩ TA = 25°C ±3.7
TA = full range(1) ±3.6
VCC = ±15 V, RL = 1 kΩ TA = 25°C ±11.5 ±12.4
TA = full range(1) ±11.2
IO Output current VCC = 5 V, RL = 7 Ω TA = 25°C 25 45 mA
TA = full range 20
VCC = ±5 V, RL = 7 Ω TA = 25°C 30 55
TA = full range(1) 28
VCC = ±15 V, RL = 7 Ω TA = 25°C 65 85
TA = full range(1) 60
POWER SUPPLY
ICC Quiescent current VCC = ±5 V TA = 25°C 10.4 15 mA
TA = full range(1) 16
VCC = ±15 V TA = 25°C 13
ICC(SD) Quiescent current (shutdown) (THS4130 only) PD = –5 V TA = 25°C 0.86 1.4 mA
TA = full range(1) 1.5
PSRR Power-supply rejection ratio (dc) TA = +25°C 73 98 dB
TA = full range(1) 70
(1) The full range temperature is 0°C to +70°C for the C-suffix device, and –40°C to +85°C for the I-suffix device.
(2) Slew rate is measured from an output level range of 25% to 75%.

 
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