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  • UCC21717-Q1 适用于 SiC/IGBT 并具有主动保护、隔离式模拟检测和高 CMTI 的汽车类 10A 拉电流/灌电流增强型隔离式单通道栅极驱动器

    • ZHCSNS8B April   2022  – June 2024 UCC21717-Q1

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  • UCC21717-Q1 适用于 SiC/IGBT 并具有主动保护、隔离式模拟检测和高 CMTI 的汽车类 10A 拉电流/灌电流增强型隔离式单通道栅极驱动器
  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay
      1. 6.1.1 Non-Inverting and Inverting Propagation Delay
    2. 6.2 Input Deglitch Filter
    3. 6.3 Active Miller Clamp
      1. 6.3.1 Internal Active Miller Clamp
    4. 6.4 Undervoltage Lockout (UVLO)
      1. 6.4.1 VCC UVLO
      2. 6.4.2 VDD UVLO
    5. 6.5 Overcurrent (OC) Protection
      1. 6.5.1 OC Protection with Soft Turn-OFF
    6. 6.6 Soft Turn-Off Triggered by RST/EN
      1. 6.6.1 Soft Turn-Off Triggered by RST/EN
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Power Supply
      2. 7.3.2  Driver Stage
      3. 7.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 7.3.4  Active Pulldown
      5. 7.3.5  Short Circuit Clamping
      6. 7.3.6  Internal Active Miller Clamp
      7. 7.3.7  Overcurrent and Short Circuit Protection
      8. 7.3.8  Soft Turn-Off
      9. 7.3.9  Fault (FLT), Reset and Enable (RST/EN)
      10. 7.3.10 Isolated Analog to PWM Signal Function
    4. 7.4 Device Functional Modes
  9. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Filters for IN+, IN-, and RST/EN
        2. 8.2.2.2 PWM Interlock of IN+ and IN-
        3. 8.2.2.3 FLT, RDY, and RST/EN Pin Circuitry
        4. 8.2.2.4 RST/EN Pin Control
        5. 8.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 8.2.2.6 Overcurrent and Short Circuit Protection
          1. 8.2.2.6.1 Protection Based on Power Modules with Integrated SenseFET
          2. 8.2.2.6.2 Protection Based on Desaturation Circuit
          3. 8.2.2.6.3 Protection Based on Shunt Resistor in Power Loop
        7. 8.2.2.7 Isolated Analog Signal Sensing
          1. 8.2.2.7.1 Isolated Temperature Sensing
          2. 8.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 8.2.2.8 Higher Output Current Using an External Current Buffer
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 第三方产品免责声明
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information
  15. 重要声明
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Data Sheet

UCC21717-Q1 适用于 SiC/IGBT 并具有主动保护、隔离式模拟检测和高 CMTI 的汽车类 10A 拉电流/灌电流增强型隔离式单通道栅极驱动器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

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1 特性

  • 5.7kVRMS 单通道隔离式栅极驱动器
  • 符合面向汽车应用的 AEC-Q100 标准
    • 器件温度等级 1：–40°C 至 +125°C 环境工作温度范围
  • 功能安全质量管理型
    • 可提供用于功能安全系统设计的文档
  • 高达 2121Vpk 的 SiC MOSFET 和 IGBT
  • 33V 最大输出驱动电压 (VDD-VEE)
  • ±10A 驱动强度和分离输出
  • 150V/ns 最小 CMTI
  • 具有 270ns 快速响应时间的过流保护
  • 4A 内部有源米勒钳位
  • 在故障条件下提供 400mA 软关断
  • 具有 PWM 输出的隔离式模拟传感器
    • 采用 NTC、PTC 或热敏二极管的温度感应
    • 高电压直流链路或相电压
  • 过流警报 FLT 和通过 RST/EN 重置
  • 使用 RST/EN 禁用器件会触发软关断
  • 抑制输入引脚上小于 40ns 的噪声瞬态和脉冲
  • RDY 上的 12V VDD UVLO（具有电源正常指示功能）
  • 具有高达 5V 过冲/欠冲瞬态电压抗扰度的输入/输出
  • 130ns（最大）传播延迟和 30ns（最大）脉冲/器件间偏移
  • SOIC-16 DW 封装，爬电距离和间隙 > 8mm
  • 工作结温范围：-40°C 至 150°C

2 应用

  • 适用于 EV 的牵引逆变器
  • 车载充电器和充电桩
  • 用于 HEV/EV 的直流/直流转换器

3 说明

UCC21717-Q1 是一款电隔离单通道栅极驱动器，设计用于驱动高达 1700V 的 SiC MOSFET 和 IGBT。它具有先进的集成保护特性、出色的动态性能和稳健性。UCC21717-Q1 具有高达 ±10A 的峰值拉电流和灌电流。

输入侧通过 SiO2 电容隔离技术与输出侧相隔离，支持高达 1.5kVRMS 的工作电压、12.8kVPK 的浪涌抗扰度，隔离栅寿命超过 40 年，并提供较低的器件间偏斜，共模噪声抗扰度 (CMTI) 大于 150V/ns。

UCC21717-Q1 包括先进的保护特性，如快速过流和短路检测、分流电流检测支持、故障报告、有源米勒钳位、输入和输出侧电源 UVLO（用于优化 SiC 和 IGBT 开关行为）和稳健性。可以利用隔离式模拟至 PWM 传感器更轻松地进行温度或电压感测，从而进一步提高驱动器的多功能性并简化系统设计工作量、尺寸和成本。

器件信息
器件型号封装(1)本体封装尺寸（标称值）
UCC21717-Q1DW（SOIC，16）10.3mm × 7.5mm
(1) 有关所有可用封装，请参阅节 13。
UCC21717-Q1 器件引脚配置器件引脚配置

4 Pin Configuration and Functions

UCC21717-Q1 UCC21717-Q1 DW Package SOIC 16 PinsTop View Figure 4-1 UCC21717-Q1 DW Package SOIC 16 PinsTop View
Table 4-1 Pin Functions
PIN I/O(1) DESCRIPTION
NAME NO.
AIN 1 I Isolated analog sensing input, parallel a small capacitor to COM for better noise immunity. Tie to COM if unused.
OC 2 I Over current detection pin, support lower threshold for SenseFET, DESAT, and shunt resistor sensing. Tie to COM is unused.
COM 3 P Common ground reference, connecting to emitter pin for IGBT or source pin for SiC-MOSFET
OUTH 4 O Gate driver output pull up
VDD 5 P Positive supply rail for gate drive voltage, Bypassing a >10-μF capacitor to COM to support specified gate driver source peak current capability. Place decoupling capacitor close to the pin.
OUTL 6 O Gate driver output pull down
CLMPI 7 O Internal Active miller clamp, connecting this pin directly to the gate of the power transistor. Leave floating or tie to VEE if unused.
VEE 8 P Negative supply rail for gate drive voltage. Bypassing a >10-μF capacitor to COM to support specified gate driver sink peak current capability. Place decoupling capacitor close to the pin.
GND 9 P Input power supply and logic ground reference
IN+ 10 I Non-inverting gate driver control input. Tie to VCC if unused.
IN– 11 I Inverting gate driver control input. Tie to GND if unused.
RDY 12 O Power good for VCC-GND and VDD-COM. RDY is open drain configuration and can be paralleled with other RDY signals
FLT 13 O Active low fault alarm output upon over current or short circuit. FLT is in open drain configuration and can be paralleled with other faults
RST/EN 14 I The RST/EN serves two purposes:
1) Enable soft shutdown of the output side. The output is turned off by a soft turn off (STO) if EN is set to low;
2) Resets the OC condition signaled on FLT pin if terminal RST/EN is set to low for more than 1000ns. A reset of signal FLT is asserted at the rising edge of terminal RST/EN.
For automatic RESET function, this pin only serves as an EN pin. Enable / shutdown of the output side. The FET is turned off by a soft turn-off, if terminal EN is set to low.
VCC 15 P Input power supply from 3V to 5.5V, bypassing a >1-μF capacitor to GND. Place decoupling capacitor close to the pin.
APWM 16 O Isolated Analog Sensing PWM output. Leave floating if unused.
(1) P = Power, G = Ground, I = Input, O = Output

5 Specifications

5.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC VCC - GND –0.3 6 V
VDD VDD - COM –0.3 36 V
VEE VEE - COM –17.5 0.3 V
VMAX VDD - VEE –0.3 36 V
IN+, IN-, RST/EN DC GND–0.3 VCC V
Transient, less than 100 ns (2) GND–5.0 VCC+5.0 V
AIN Reference to COM –0.3 5 V
OC Reference to COM –0.3 6 V
OUTH, OUTL, CLMPI DC VEE–0.3 VDD V
Transient, less than 100 ns (2) VEE–5.0 VDD+5.0 V
RDY, FLT, APWM GND–0.3 VCC V
IFLT, IRDY FLT and RDY pin input current   20 mA
IAPWM APWM pin output current   20 mA
TJ Junction Temperature –40 150 °C
Tstg Storage Temperature –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime
(2) Values are verified by characterization on bench.

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) ±4000 V
Charged-device model (CDM), per AEC Q100-011 ±1500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC VCC-GND 3 5.5 V
VDD VDD-COM 13 33 V
VEE VEE-COM -16 0 V
VMAX VDD-VEE 33 V
IN+, IN-, RST/EN Reference to GND, High level input voltage 0.7xVCC VCC V
Reference to GND, Low level input voltage 0 0.3xVCC V
AIN Reference to COM 0.6 4.5 V
tRST/EN Minimum pulse width that reset the fault 1000 ns
tRST/STO Minimum pulse width that triggers STO  5 µs
TA Ambient temperature –40 125 °C
TJ Junction temperature –40 150 °C

 
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