支持经典 CAN:1Mbps
ISOW1044 器件是一款电隔离式控制器局域网 (CAN) 收发器,内置隔离式直流/直流转换器,无需在空间受限的隔离式设计中使用单独的隔离式电源。低发射、隔离式直流/直流转换器符合 CISPR 32 辐射发射 B 类标准,在简单的两层 PCB 上仅使用两个铁氧体磁珠。额外的 20mA 输出电流可用于为板上的其他电路供电。该器件具有一个集成的 10Mbps GPIO 通道,有助于去除额外用于诊断、LED 指示或电源监测的数字隔离器或光耦合器。
特性 | ISOW1044 | ISOW1044B |
---|---|---|
保护级别 | 增强型 | 基本型 |
浪涌测试电压 | 10kVPK | 7.8kVPK |
隔离额定值 | 5000VRMS | 5000VRMS |
工作电压 | 1000VRMS/1500 VPK | 1000VRMS/1500 VPK |
封装 | DFM (20) | DFM (20) |
封装尺寸(标称值) | 12.83mm x 7.5mm | 12.83mm x 7.5mm |
Changes from Revision * (March 2021) to Revision A (December 2021)
该器件支持传统 CAN 和 CAN FD 网络,数据速率高达 5 兆位/秒 (Mbps)。它提供 ±58V 直流总线故障保护功能和 ±12V 共模电压范围。信号和电源路径均按照 UL1577 进行 5kVRMS 隔离,并符合 VDE、CSA、TUV 和 CQC 的增强型和基础型隔离要求。这些器件的总线引脚可承受高达 8kV 的 IEC 61000-4-2 静电放电 (ESD)。
ISOW1044 器件通过将 PCB 上的 VIO 和 VDD 连接到一起,可在 4.5V 至 5.5V 的单一电源电压下运行。如果需要较低的逻辑电平,这些器件支持 1.71V 至 5.5V 逻辑电源 (VIO),这些电源可与 4.5V 至 5.5V 的功率转换器电源 (VDD) 相互独立。这些器件支持从 –40°C 到 +125°C 的宽工作环境温度范围,并采用 20 引脚 DFM(SOIC-20 尺寸兼容封装),提供最小 8mm 的爬电距离和间隙。
ISOW1044 支持待机模式,并且可通过符合 ISO 11898-2:2016 所定义唤醒模式 (WUP) 的 CAN 来唤醒。该器件还具有保护和诊断特性,支持热关断 (TSD)、TXD 显性超时 (DTO) 和电源欠压检测。
PART NUMBER | ISOLATION | PACKAGE | BODY SIZE (NOM) |
---|---|---|---|
ISOW1044 | Reinforced | 20-DFM (SOIC) | 12.83 mm x 7.5 mm |
ISOW1044B | Basic | 20-DFM (SOIC) | 12.83 mm x 7.5 mm |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
VIO | 1 | -- | Side 1 Logic supply |
IN | 2 | I | General purpose logic (GPIO) input (internal pull-down) |
TXD | 3 | I | Driver enable. If this pin is floating, the driver is disabled (internal pull-down) |
STB | 4 | I | Standby enable. Connect this pin to GNDIO in normal mode. If this pin is floating or logic high, driver is in standby mode. |
RXD | 5 | O | Receiver data output |
GNDIO | 6 | -- | Ground connection on side 1 for VIO. GNDIO and GND1 are not internally connected and need be shorted on PCB. |
NC | 7 | -- | Not connected internally |
EN/FLT | 8 | I/O |
Multi-function power converter enable input pin or fault output pin. Can only be used as either an input pin or an output pin.
|
VDD | 9 | -- | Side 1 DC-DC converter power supply |
GND1 | 10 | -- | Ground connections on side for VDD . GNDIO and GND1 are not internally connected and need be shorted on PCB. |
GND2 | 11 | -- | Ground connections on side for VISOOUT . GND2 and GISOIN are not internally connected and need be shorted direclty on PCB, or connected through a ferrite bead. |
VISOOUT | 12 | -- | Isolated power converter output voltage. VISOOUT and VISOIN need be shorted directly on PCB, or connected through a ferrite bead. |
VSIN | 13 | I | Power converter input . Pin 12 and pin 13 need be shorted directly on PCB. |
OUT | 14 | O | General purpose logic (GPIO) output (default output is low) |
GISOIN | 15, 16, 17 | -- | Ground connections for VISOIN. GND2 and GISOIN need be shorted direclty on PCB, or connected through a ferrite bead. |
CANL | 18 | I/O | Low-level CAN bus line |
CANH | 19 | I/O | High-level CAN bus line |
VISOIN | 20 | -- | Power supply input for CAN tranceiver. VISOIN and VISOOUT need be shorted direclty on PCB, or connected through a ferrite bead. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VDD | Power converter supply voltage | –0.5 | 6 | V |
VISOIN | Isolated supply voltage, input supply for CAN transceiver | –0.5 | 6 | V |
VISOOUT | Isolated supply voltage, Power converter output | –0.5 | 6 | V |
VIO | Logic supply voltage | –0.5 | 6 | V |
VBUS | Voltage on bus pins (CANH, CANL with respect to GND2) | -58 | 58 | V |
VBUS_DIFF | Max Differential voltage on bus pins (CANH-CANL) | -45 | 45 | V |
Vlogic_IO | Logic I/O voltage level ( RXD, TXD, STB, EN, IN) | –0.5 | VIO + 0.5(3) | V |
OUT | -0.5 | VISOIN + 0.5 | V | |
IO | Output current on RXD, OUT pins | –15 | 15 | mA |
TJ | Junction temperature | –40 | 150 | °C |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | All pins except bus pins | ±2000 | V |
CANH, CANL Bus pins w.r.t GND2(pin15/16/17) | ±12000 | ||||
V(ESD) | Electrostatic discharge | Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | V | |
V(ESD) | Electrostatic discharge | per IEC61000-4-2 contact discharge, CANH and CANL w.r.t. GND2 | ±8000 | V | |
V(ESD) | Electrostatic discharge | per IEC61000-4-2 contact discharge, CANH and CANL w.r.t. GND1 (across Isolation barrier) | ±8000 | V |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VIO | Logic supply voltage | 1.8-V operation | 1.71 | 1.89 | V | |
2.5-V, 3.3-V, and 5.5-V operation | 2.25 | 5.5 | ||||
VDD | Power converter supply voltage | 4.5 | 5.5 | V | ||
VDD(UVLO+) | Supply threshold when Power converter supply is rising | 2.7 | 2.95 | V | ||
VDD(UVLO-) | Supply threshold when Power converter supply is falling | 2.40 | 2.55 | V | ||
VHYS1(UVLO) | Power converter supply voltage hysteresis | 0.15 | 0.24 | V | ||
VIO(UVLO+) | Rising threshold of Logic supply voltage | 1.7 | V | |||
VIO(UVLO-) | Falling threshold of Logic supply voltage | 1 | V | |||
VHYS2(UVLO) | Logic supply voltage hysteresis | 75 | 125 | mV | ||
VIH | High-level input voltage (TXD, STB, EN, and IN inputs) | 0.7 × VIO | VIO | V | ||
VIL | Low-level input voltage (TXD, STB, EN, and IN inputs) | 0 | 0.3 × VIO | V | ||
IOH | High-level output current RXD | VIO = 5V | -4 | mA | ||
VIO = 3.3V | -2 | mA | ||||
VIO = 1.8 or 2.5V | -1 | mA | ||||
IOL | Low-level output current RXD | VIO = 5V | 4 | mA | ||
VIO = 3.3V | 2 | mA | ||||
VIO = 1.8 or 2.5V | 1 | mA | ||||
IOH | High-level output current OUT | VDD=4.5 to 5.5V | -4 | mA | ||
IOL | Low-level output current OUT | VDD=4.5 to 5.5V | 4 | mA | ||
1/tUI | Signaling rate | CAN | 5 | Mbps | ||
DR | Data rate for extra GPIO channel | GPIO | 10 | Mbps | ||
Tpwrup | Power up time after applying input supply(Isolated output supply reaches 90% of setpoint and data transmission can start after this) | 5 | ms | |||
TA | Ambient operating temperature | ≤ 50% of bits are dominant | –40 | 125 | °C | |
–40 | 105 | °C |
THERMAL METRIC(1) | ISOW1044 | UNIT | |
---|---|---|---|
DFM | |||
20 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 68.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 20.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 44.8 | °C/W |
ΨJT | Junction-to-top characterization parameter | 13 | °C/W |
ΨJB | Junction-to-board characterization parameter | 44 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | -- | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PD | Maximum power dissipation (both sides) | VIO = VDD = 5.5 V, STB= GND1, CAN Bus load RL= 60 Ω, TXD=repetitive pattern of 1 ms time period with 990 µs LOW time, 10 µs HIGH time, Extra load on VISOOUT= 20 mA | 1060 | mW | ||
PD1 | Maximum power dissipation (side-1) | 490 | mW | |||
PD2 | Maximum power dissipation by (side-2) | 570 | mW |
PARAMETER | TEST CONDITIONS | VALUE | UNIT | |
---|---|---|---|---|
GENERAL | ||||
CLR | External clearance(1) | Shortest terminal-to-terminal distance through air | >8 | mm |
CPG | External creepage(1) | Shortest terminal-to-terminal distance across the package surface | >8 | mm |
DTI | Distance through the insulation | Minimum internal gap (internal clearance – capacitive signal isolation) | >17 | um |
DTI | Distance through the insulation | Minimum internal gap (internal clearance- transformer power isolation) | >120 | um |
CTI | Comparative tracking index | IEC 60112; UL 746A | >600 | V |
Material group | According to IEC 60664-1 | I | ||
Overvoltage Category | Rated mains voltage ≤ 600 VRMS | I-IV | ||
Rated mains voltage ≤ 1000 VRMS | I-III | |||
DIN VDE V 0884-11:2017-01(2) | ||||
VIORM | Maximum repetitive peak isolation voltage | AC voltage (bipolar) | 1500 | VPK |
VIOWM | Maximum working isolation voltage | AC voltage (sine wave) Time dependent dielectric breakdown (TDDB) test | 1000 | VRMS |
DC voltage | 1500 | |||
VIOTM | Maximum transient isolation voltage | VTEST = VIOTM, t = 60s (qualification); VTEST = 1.2 × VIOTM, t = 1s (100% production) |
7071 | VPK |
VIOSM | Maximum surge isolation voltage ISOW1044(3) | Test method per IEC 62368-1, 1.2/50 µs waveform, VTEST = 1.6 × VIOSM = 10000 VPK (qualification) |
6250 | VPK |
VIOSM | Maximum surge isolation voltage ISOW1044B(3) | Test method per IEC 62368-1, 1.2/50 µs waveform, VTEST = 1.3 × VIOSM = 7800 VPK (qualification) |
6000 | VPK |
qpd | Apparent charge(4) | Method a: After I/O safety test subgroup 2/3, Vini = VIOTM, tini = 60 s; Vpd(m) = 1.2 × VIORM , tm = 10 s |
≤5 | pC |
Method a: After environmental tests subgroup 1, Vini = VIOTM, tini = 60 s; ISOW1044: Vpd(m) = 1.6 × VIORM, tm = 10 s. ISOW1044B: Vpd(m) = 1.2 × VIORM, tm = 10 s |
≤5 | |||
Method b1: At routine test (100% production) and preconditioning (type test) Vini = 1.2 × VIOTM, tini = 1 s; ISOW1044: Vpd(m) = 1.875 × VIORM, tm = 1 s. ISOW1044B: Vpd(m) = 1.5 × VIORM, tm = 1 s |
≤5 | |||
CIO | Barrier capacitance, input to output(5) | VIO = 0.4 sin (2πft), f = 1 MHz | ~3.5 | pF |
RIO | Isolation resistance, input to output(5) | VIO = 500 V, TA = 25°C | > 1012 | Ω |
VIO = 500 V, 100°C ≤ TA ≤ 125°C | > 1011 | Ω | ||
VIO = 500 V at TS = 150°C | > 109 | Ω | ||
Pollution degree | 2 | |||
Climatic category | 40/125/21 | |||
UL 1577 | ||||
VISO | Withstand isolation voltage | VTEST = VISO, t = 60 s (qualification); VTEST = 1.2 × VISO , t = 1 s (100% production) | 5000 | VRMS |