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  • 具有集成式低辐射低噪声直流/直流转换器的 ISOW774x 四通道数字隔离器

    • ZHCSLW2C September   2021  – April 2022 ISOW7740 , ISOW7741 , ISOW7742 , ISOW7743 , ISOW7744

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  • 具有集成式低辐射低噪声直流/直流转换器的 ISOW774x 四通道数字隔离器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（接续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics - Power Converter
    10. 7.10 Supply Current Characteristics - Power Converter
    11. 7.11 Electrical Characteristics Channel Isolator - VIO, VISOIN = 5-V
    12. 7.12 Supply Current Characteristics Channel Isolator - VIO, VISOIN = 5-V
    13. 7.13 Electrical Characteristics Channel Isolator - VIO, VISOIN = 3.3-V
    14. 7.14 Supply Current Characteristics Channel Isolator - VIO, VISOIN = 3.3-V
    15. 7.15 Electrical Characteristics Channel Isolator - VIO, VISOIN = 2.5-V
    16. 7.16 Supply Current Characteristics Channel Isolator - VIO, VISOIN = 2.5-V
    17. 7.17 Electrical Characteristics Channel Isolator - VIO, VISOIN = 1.8-V
    18. 7.18 Supply Current Characteristics Channel Isolator - VIO, VISOIN = 1.8-V
    19. 7.19 Switching Characteristics - 5-V Supply
    20. 7.20 Switching Characteristics - 3.3-V Supply
    21. 7.21 Switching Characteristics - 2.5-V Supply
    22. 7.22 Switching Characteristics - 1.8-V Supply
    23. 7.23 Insulation Characteristics Curves
    24. 7.24 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
      1. 9.1.1 Power Isolation
      2. 9.1.2 Signal Isolation
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Electromagnetic Compatibility (EMC) Considerations
      2. 9.3.2 Power-Up and Power-Down Behavior
      3. 9.3.3 Protection Features
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device I/O Schematics
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
      4. 10.2.4 Insulation Lifetime
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 PCB Material
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 支持资源
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 术语表
  14. 14Mechanical, Packaging, and Orderable Information
  15. 重要声明
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DATA SHEET

具有集成式低辐射低噪声直流/直流转换器的 ISOW774x 四通道数字隔离器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 100 Mbps 数据速率
  • 低辐射、低噪声的集成式直流/直流转换器
    • 辐射经过优化，符合 CISPR 32 和 EN 55032 B 类标准，在 2 层电路板上的裕度 >5dB
    • 25 MHz 的低频电源转换器可实现低噪声性能
    • 低输出波纹：24 mV
  • 高效率输出功率
    • 最大负载时的效率：46%
    • 高达 0.55W 的输出功率
    • VISOOUT 精度为 5%
    • 5V 至 5V：最大可用负载电流 = 110 mA
    • 5V 至 3.3V：最大可用负载电流 = 140 mA
    • 3.3V 至 3.3V：最大可用负载电流 = 60 mA
  • 用于通道隔离器和电源转换器的独立电源
    • 逻辑电源 (VIO)：1.71V 至 5.5V
    • 电源转换器电源 (VDD)：3V 至 5.5V
  • 优异的电磁兼容性 (EMC)
    • 系统级 ESD、EFT 和浪涌抗扰性
    • 在整个隔离栅具有 ±8kV IEC 61000-4-2 接触放电保护
  • 增强型和基础型隔离选项
  • 高 CMTI：100 kV/µs（典型值）
  • 安全相关认证：
    • 符合 DIN VDE V 0884-11:2017-01 标准的 VDE 增强型和基础型绝缘
    • UL 1577 组件认证计划
    • IEC 62368-1、IEC 61010-1、IEC 60601-1 和 GB 4943.1-2011 认证
    • ISOW774xB 器件已列入计划
  • 扩展温度范围：–40°C 至 +125°C
  • 20 引脚宽体 SOIC 封装

2 应用

  • 工厂自动化
  • 电机控制
  • 电网基础设施
  • 医疗设备
  • 测试和测量

3 说明

ISOW77xx 器件系列是具有低辐射集成式高效电源转换器的电隔离四通道数字隔离器。集成式直流/直流转换器提供高达 550mW 的隔离式电源，无需在空间受限的隔离设计中使用单独的隔离式电源。

器件信息
特性

ISOW774x

ISOW774xF

ISOW774xB

ISOW774xFB
保护级别 增强型 基本型
浪涌测试电压 10kVPK 7.8kVPK
隔离额定值 5000VRMS 5000VRMS
工作电压 1000 VRMS/1500VPK 1000 VRMS/1500VPK
封装 DFM (20) DFM (20)
封装尺寸（标称值） 12.83 mm x 7.5 mm 12.83 mm x 7.5 mm
ISOW7741 简化原理图

4 Revision History

Changes from Revision B (January 2022) to Revision C (April 2022)

  • Added ISOW7740, ISOW7742, ISOW7743 and ISOW7744 Typical CharacteristicsGo

Changes from Revision A (October 2021) to Revision B (January 2022)

  • 向数据表添加了 ISOW7740、ISOW7742、ISOW7743 和 ISOW7744。Go

Changes from Revision * (September 2021) to Revision A (October 2021)

  • 将器件状态更新为“生产数据”。Go

5 说明（接续）

电源转换器可在 –40°C 至 +125°C 的宽工作环境温度范围内高效运行。该器件提供改进的发射性能，简化了电路板设计，并提供了铁氧体磁珠以进一步衰减发射。ISOW774x 设计时考虑了增强的保护功能，包括软启动来限制浪涌电流、过压和欠压锁定、EN/FLT 引脚上的故障检测、过载和短路保护以及热关机。

ISOW77xx 系列器件提供高电磁抗扰度，同时隔离 CMOS 或低电压互补金属氧化物半导体 (LVCMOS) 数字 I/O 。该信号隔离通道具有逻辑输入和输出缓冲器，由双电容二氧化硅 (SiO2) 绝缘栅隔开，而电源隔离则采用由薄膜聚合物隔开的片上变压器作为绝缘材料。四通道 ISOW77xx 有五种可订购的配置，器件型号的最后一位数字表示反向通道的数量。例如，ISOW7740 有 4 个正向通道和 0 个反向通道，而 ISOW7743 将有 1 个正向通道和 3 个反向通道。如果输入信号丢失，则不具有 F 后缀的 ISOW77xx 器件默认输出高电平，具有 F 后缀的 ISOW77xx 器件默认输出低电平。通过在PCB上将VIO 和 VDD连接在一起，ISOW774x 可在 3V 至 5.5V 的单一电源下运行。如果需要较低的逻辑电平，这些器件支持 1.71V 至 5.5V 逻辑电源 (VIO)，该电源独立于 3V 至 5.5V 的电源转换器电源 (VDD) 。VISOIN 和 VISOOUT 需要通过铁氧体磁珠或通过 LDO 馈电连接到电路板。

这些器件有助于防止数据总线（例如，UART、SPI、RS-485、RS-232 和 CAN）或者其他电路上的噪声电流进入本地接地以及干扰或损坏敏感电路。通过创新的芯片设计和布线技术，该器件的电磁兼容性得到了显著增强，可缓解系统级 ESD、EFT 、浪涌和辐射合规性。器件采用 20 引脚 SOIC 宽体 (SOIC-WB) DFM 封装。

6 Pin Configuration and Functions

Figure 6-1 ISOW7740 DFM Package 20-Pin SOIC-WB Top View
Figure 6-2 ISOW7741 DFM Package 20-Pin SOIC-WB Top View
Figure 6-3 ISOW7742 DFM Package 20-Pin SOIC-WB Top View
Figure 6-4 ISOW7743 DFM Package 20-Pin SOIC-WB Top View
Figure 6-5 ISOW7744 DFM Package 20-Pin SOIC-WB Top View
PIN I/O DESCRIPTION
NAME NO.
ISOW7740 ISOW7741 ISOW7742 ISOW7743 ISOW7744
GNDIO 6 6 6 6 6 — Ground connection for VIO. GND1 and GNDIO needs to be shorted on board.
GND1 10 10 10 10 10 — Ground connection for VDD. GND1 and GNDIO needs to be shorted on board.
GND2 11 11 11 11 11 — Ground connection for VISOOUT. GND2 and GISOIN pins can be shorted on board or connected through a ferrite bead. See the Layout Section for more information.
GISOIN 15 15 15 15 15 — Ground connection for VISOIN. GND2 and GISOIN pins can be shorted on board or connected through a ferrite bead. See the Layout Section for more information.
INA 2 2 2 2 19 I Input channel A
INB

3

3

3

 18 18 I Input channel B
INC

4

4

17

17

17

 I Input channel C
IND

5

16

16

16

16

 I Input channel D
OUTA 19 19 19 19 2 O Output channel A
OUTB 18 18

18

3

3

 O Output channel B
OUTC 17

17

4

4

4

 O Output channel C
OUTD 16 5 5 5 5 O Output channel D
EN_IO1

7

7

7

7

7

I

 Output Enable 1: When EN_IO1 is high or open then the channel output pins on side 1 are enabled. When EN_IO1 is low then the channel output pins on side 1 are in a high impedance state and the transmitter of the channel input pins on side 1 are disabled.
EN_IO2

14

 14 14 14 14

I

 Output Enable 2: When EN_IO2 is high or open then the channel output pins on side 2 are enabled. When EN_IO2 is low then the channel output pins on side 2 are in a high impedance state and the transmitter of the channel input pins on side 2 are disabled.
EN/FLT

8

8

8

8

8

I/O

 Multi-function power converter enable input pin or fault output pin. Can only be used as either an input pin or an output pin.

Power converter enable input pin: enables and disables the integrated DC-DC power converter. Connect directly to microcontroller or through a series current limiting resistor to use as an enable input pin. DC-DC power converted is enabled when EN/FLT is high to the VIO voltage level and disabled when low at GND1 voltage level.

Fault output pin: Alert signal if power converter is not operating properly. This pin is active low. Connect to microcontroller through a 5 kΩ or greater pull-up resistor in order to use as a fault outpin pin.

See Section 9.3.3 for more information

VSEL

13

13

13

13

13

I

 VISOOUT selection pin. VISOOUT = 5 V when VSEL shorted to VISOOUT. VISOOUT = 3.3 V, when VSEL shorted to GND2. For more information see the Device Functional Modes.
VIO 1 1 1 1 1 — Side 1 logic supply.
VDD

9

9

9

9

9

 — Side 1 DC-DC converter power supply.
VISOIN

20

 20 20 20

20

 — Side 2 supply voltage for isolation channels. VISOIN and VISOOUT pins can be shorted on board or connected through a ferrite bead. See Section 10 for more information.
VISOOUT

12

12

12

12

12

—

 Isolated power converter output voltage. VISOIN and VISOOUT pins can be shorted on board or connected through a ferrite bead. See Section 10 for more information.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VDD Power converter supply voltage –0.5 6 V
VISOIN Isolated supply voltage, input supply for secondary side isolation channels –0.5 6 V
VISOOUT Isolated supply voltage, Power converter output
VSEL shorted to GND2		 –0.5 4 V
VISOOUT Isolated supply voltage, Power converter output
VSEL shorted to VISOOUT		 –0.5 6 V
VIO Primary side logic supply voltage –0.5 6 V
V Voltage at INx, OUTx, EN_IOx(3) –0.5 VSI + 0.5 V
Voltage at EN/FLT –0.5 VSI + 0.5 V
Voltage at VSEL –0.5 VISOOUT + 0.5 V
IO Maximum output current through data channels –15 15 mA
TJ Junction temperature –40 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) VDD, VISOIN VISOOUT, and VIO are with respect to the local ground pin (GND1 or GND2). All voltage values except differential I/O bus voltages are peak voltage values.
(3) VSI = input side supply; Cannot exceed 6 V.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1)
HBM ESD Classification Level 2		 ±3000 V
Charged-device model (CDM), per AEC Q100-011
CDM ESD Classification Level C6		 ±1500
Contact discharge per IEC 61000-4-2(2)
Isolation barrier withstand test		 ±8000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
(2) IEC ESD strike is applied across the barrier with all pins on each side tied together creating a two-terminal device.

7.3 Recommended Operating Conditions

Over recommended operating conditions, typical values are at VDD = VIO = 3.3 V and TA =25°C, GND1 = GNDIO, GND2 = GISOIN (unless otherwise noted)
MIN NOM MAX UNIT
Power Converter
VDD Power converter supply voltage 3.3 V operation 2.97 3.3 3.63 V
5 V operation 4.5 5 5.5 V
VDD(UVLO+) Positive threshold when power converter supply is rising Positive threshold when power converter supply is rising 2.7 2.95 V
VDD(UVLO-) Positive threshold when power converter supply is falling Positive threshold when power converter supply is falling 2.40 2.55 V
VDD(HYS) Power converter supply voltage hysteresis Power converter supply voltage hysteresis 0.15 V
Channel Isolation
VIO, VISOIN (3) Channel logic supply voltage 1.8 V operation 1.71 1.89 V
2.5 V, 3.3 V, and 5 V operation 2.25 5.5 V
VIO(UVLO+) Rising threshold of logic supply voltage 1.55 1.7 V
VIO(UVLO-) Falling threshold of logic supply voltage 1.0 1.41 V
VIO(HYS) Logic supply voltage hysteresis 75 mV
IOH High level output current(1) VISOIN = 5 V –4 mA
VISOIN = 3.3 V –2 mA
VISOIN = 2.5 V –1 mA
VISOIN = 1.8 V –1 mA
IOL Low level output current(1) VISOIN = 5 V 4 mA
VISOIN = 3.3 V 2 mA
VISOIN = 2.5 V 1 mA
VISOIN = 1.8 V 1 mA
VIH High-level input voltage(2) 0.7 × VSI VSI V
VIL Low-level input voltage 0 0.3 × VSI V
DR Data rate 100 Mbps
tPWRUP Channel isolator ready after power up or EN/FLT high VISOIN > VIO(UVLO+) 5 ms
TA Ambient temperature –40 125 °C
(1) This current is for data output channel.
(2) VSI = input side supply; VSO = output side supply
(3) The channel outputs are in undetermined state when 1.89 V < VSI < 2.25 V and 1.05 V < VSI < 1.71 V

7.4 Thermal Information

THERMAL METRIC(1) ISOW774x UNIT
DFM (SOIC)
20 PINS
RθJA Junction-to-ambient thermal resistance 68.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 24.6 °C/W
RθJB Junction-to-board thermal resistance 53.7 °C/W
ΨJT Junction-to-top characterization parameter 17.1 °C/W
ΨJB Junction-to-board characterization parameter 50.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Power Ratings

VDD = VIO = 5.5 V, IISO = 110 mA, TJ = 150°C, TA ≤ 80°C, CL = 15 pF, input a 50-MHz 50% duty-cycle square wave
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PD Maximum power dissipation (both sides) VDD = 5.5 V, VIO = 5.5 V, VISOOUT = VISOIN, IISOOUT = 100 mA, TJ = 150°C, TA ≤ 80°C, CL = 15 pF, input a 50-MHz 50% duty-cycle square wave 1.48 W
PD1 Maximum power dissipation (side-1) 0.74 W
PD2 Maximum power dissipation (side-2) 0.74 W

 
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