DATA SHEET
UCC27288 具有 8V UVLO 和外部自举二极管的 3A 120V 半桥栅极驱动器
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1 特性
- 可驱动两个采用高侧/低侧配置的 N 沟道 MOSFET
- 16ns 典型传播延迟
- 1800pF 负载时的上升时间为 12ns，下降时间典型值为 10ns
- 1ns 典型延迟匹配
- 可配置的外部自举二极管
- 8V 典型欠压锁定
- 输入引脚上接受的绝对最大负电压 (–5V)
- HS 引脚上接受的绝对最大负电压 (-14 V)
- ±3A 峰值输出电流
- 绝对最大启动电压为 120V
- 输入相互独立且 VDD
- 两个通道的欠压锁定
- 额定结温范围为 –40°C 至 140°C
3 说明
UCC27288 是一款功能强大的 N 沟道 MOSFET 驱动器，最大开关节点 (HS) 额定电压为 100V。借助此器件，可在基于半桥或同步降压配置的拓扑中控制两个 N 沟道 MOSFET。由于具有 3A 的峰值灌电流和拉电流以及较低的上拉和下拉电阻，UCC27288 能够在 MOSFET 米勒平台转换期间以极低开关损耗驱动大功率 MOSFET。由于输入与电源电压无关，因此 UCC27288 与模拟控制器和数字控制器均可结合使用。两个输入完全相互独立，因此提供了额外的控制设计灵活性。
输入引脚和 HS 引脚能够承受较大的负电压，因此提高了系统稳健性。输入完全相互独立。这允许控制灵活性，如果需要，两个输出可以通过重叠输入重叠。较小的传播延迟和延迟匹配规格可尽可能降低死区时间要求，从而提高系统效率。
高侧和低侧驱动器级均配有欠压锁定 (UVLO) 功能，因此可在 VDD 电压低于指定阈值时将输出强制为低电平。没有集成的自举二极管允许用户使用适合应用的外部自举二极管。UCC27288 采用 SOIC8 封装，可在恶劣环境下提高系统稳健性。
器件信息
| 器件型号 | 封装（大小）(1) |
|---|---|
| UCC27288 | SOIC8 (6mm x 5mm) |
(1) 如需了解所有可用封装，请参阅产品说明书末尾的可订购产品附录。
4 Revision History
Changes from Revision A (October 2020) to Revision B (April 2022)
- Updated typcal peak pullup/pulldown current from +2.5A/-3.5A to ±3A in Electrical CharacteristicsGo
- Updated IHBS typical leakage to 5.0μA and test voltage from 110V to 100V in Electrical CharacteristicsGo
Changes from Revision * (June 2020) to Revision A (October 2020)
- 将销售状态从“预告信息”更改为“初始发行版”。Go
Changes from Revision () to Revision ()
5 Pin Configuration and Functions
Figure 5-1 D Package
8-Pin SOIC
Top ViewPin Functions
| PIN | I/O(1) | DESCRIPTION | |
|---|---|---|---|
| Name | D | ||
| HB | 2 | P | High-side bootstrap supply. The external bootstrap diode and the external bootstrap capacitor is required to generate bootstrap supply from VDD. Connect positive side of the bootstrap capacitor and cathode of an external diode to this pin. The external diode should be 100V (minimum) rated. Higher voltage rated diode is acceptable too. Typical recommended value of HB bypass capacitor is 0.1 μF, This value primarily depends on the gate charge of the high-side MOSFET. |
| HI | 5 | I | High-side input. |
| HO | 3 | O | High-side output. Connect to the gate of the high-side power MOSFET or one end of external gate resistor, when used. |
| HS | 4 | P | High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. |
| LI | 6 | I | Low-side input |
| LO | 8 | O | Low-side output. Connect to the gate of the low-side power MOSFET or one end of external gate resistor, when used. |
| VDD | 1 | P | Positive supply to the low-side gate driver. Decouple this pin to VSS. Typical decoupling capacitor value is 1 μF. When using an external boot diode, connect the anode to this pin. If series resistor is used in series with the boot diode then connect one end of series boot resistor to this pin and other end of the resistor should be connected to the anode of the external boot diode. |
| VSS | 7 | G | Negative supply terminal for the device which is generally the system ground. |
(1) P = Power, G = Ground, I = Input, O = Output, I/O =
Input/Output
6 Specifications
6.1 Absolute Maximum Ratings
All voltages are with respect to Vss(1)(2)
| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| VDD | Supply voltage | –0.3 | 20 | V | |
| VHI, VLI | Input voltages on HI and LI | –5 | 20 | V | |
| VLO | Output voltage on LO | DC | –0.3 | VDD + 0.3 | V |
| Pulses < 100 ns(3) | –2 | VDD + 0.3 | |||
| VHO | Output voltage on HO | DC | VHS – 0.3 | VHB + 0.3 | V |
| Pulses < 100 ns(3) | VHS – 2 | VHB + 0.3 | |||
| VHS | Voltage on HS | DC | –10 | 100 | V |
| Pulses < 100 ns(3) | –14 | 100 | |||
| VHB | Voltage on HB | –0.3 | 120 | V | |
| VHB-HS | Voltage on HB with respect to HS | –0.3 | 20 | V | |
| TJ | Operating junction temperature | –40 | 150 | °C | |
| Lead temperature (soldering, 10 sec.) | 300 | °C | |||
| Tstg | Storage temperature | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to Vss. Currents are positive into, negative out of the specified terminal.
(3) Values are verified by characterization only.
