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  • UCC12050 高密度、低 EMI、5kVRMSReinforced 隔离式直流/直流模块

    • ZHCSK90D september   2019  – january 2021 UCC12050

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  • UCC12050 高密度、低 EMI、5kVRMSReinforced 隔离式直流/直流模块
  1. 1 特性
  2. 2 应用和用途
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristics Curves
    12. 6.12 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable and Disable
      2. 7.3.2 UVLO, Power-Up, and Power-Down Behavior
      3. 7.3.3 VISO Load Recommended Operating Area
      4. 7.3.4 Thermal Shutdown
      5. 7.3.5 External Clocking and Synchronization
      6. 7.3.6 VISO Output Voltage Selection
      7. 7.3.7 Electromagnetic Compatibility (EMC) Considerations
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 VISO Output Capacitor Selection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 静电放电警告
    7. 11.7 术语表
  12. 12Mechanical and Packaging Information
  13. 重要声明
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DATA SHEET

UCC12050 高密度、低 EMI、5kVRMSReinforced 隔离式直流/直流模块

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 采用优化的集成变压器技术的高密度直流/直流模块
  • 输入电压范围：4.5V 至 5.5V
  • 输出电压（可选）：5.4V、5.0V、3.7V、3.3V
  • 输出功率：500mW
  • 峰值效率：60%
  • 线性调整率（典型值）：1%
  • 负载调整率（典型值）：1.5%
  • 符合 CISPR32 B 类 EMI 标准限制，双层 PCB 上无需使用铁氧体磁珠
  • 展频调制 (SSM)
  • 稳健可靠的隔离栅：
    • 隔离等级： 5 kVRMS
    • 浪涌能力： 10 kVPK
    • 工作电压： 1.2 kVRMS
    • CMTI（典型值）：±100V/ns
  • 短路恢复
  • 热关断保护
  • 16 引脚宽体 SOIC 封装，爬电距离和间隙大于 8mm
  • 工作温度范围：–40°C 至 125°C
  • 安全相关认证：
    • 符合 DIN V VDE V 0884-11:2017-01 标准的 7071VPK 增强型隔离
    • 符合 UL 1577 标准且长达 1 分钟的 5000VRMS 隔离
    • 获得 UL 认证，符合 IEC 60950-1、IEC 62368-1 和 IEC 60601-1 终端设备标准
    • 根据 GB4943.1-2011 标准进行的 CQC 认证

2 应用和用途

  • 车载充电器
  • 电池管理系统
  • 牵引逆变器
  • 用于 HEV/EV 的直流/直流转换器

3 说明

UCC12050 是一款具有 5kVRMSreinforced 隔离额定值的汽车级直流/直流电源模块，旨在为需要偏置电源及稳压输出电压的隔离电路提供有效的隔离电源。该器件集成了具有专有架构的变压器和直流/直流控制器，可提供 500mW（典型值）的隔离功率，并具有低 EMI。

UCC12050 集成了保护功能以增强系统稳健性。该器件还具有使能引脚、同步功能以及 5V 或 3.3V 稳压输出选项（带净空电压）。UCC12050 是一种薄型、小型化解决方案，采用高度为 2.65mm（典型值）的宽体 SOIC 封装。

器件信息(1)
器件型号封装封装尺寸（标称值）
UCC12050DVE SOIC (16)10.30mm × 7.50mm
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。
GUID-C7E7C870-41E5-4931-98EE-B59A572684B7-low.gif简化版应用
GUID-51275D35-EA6C-43C9-9B7F-41F7AF91B53E-low.gif
VINP = 5.0VTA = 25°C
典型效率与负载间的关系

4 Revision History

Changes from Revision C (April 2020) to Revision D (February 2021)

  • 在整个文档中添加了更新文本Go
  • Updated ESD values. Go
  • Updated thermal footnote description.Go
  • Updated voltage isolation specs per DIN V VDE V 0884-11:2017-01Go
  • Added certification numbers.Go
  • Updated Switching Characteristics (non-sync).Go
  • Added Section number included Go

Changes from Revision B (December 2019) to Revision C (April 2020)

  • 在整个文档中添加了更新文本Go
  • Added footnote to Insulation Speficications tableGo
  • Removed Pout_max as a Loading parameter. Removed Pout_max from graph.Go

Changes from Revision A (September 2019) to Revision B (December 2019)

  • 将销售状态从“预告信息”更改为“初始发行版”Go

5 Pin Configuration and Functions

DVE Package16-Pin SOICTop View

GUID-4ACD507E-BD0A-4676-8D50-0B81F5A27275-low.svg
Table 5-1 Pin Functions
PINTYPE (1) DESCRIPTION
NAMENO.
EN1IEnable pin. Forcing EN low disables the device. Pull high to enable normal device functionality.
GNDP2PPower ground return connection for VINP.
GNDS9PConnect to GNDS plane on printed circuit board. Do not use as only ground connection for VISO. Ensure pin 15 is connected to circuit ground.
16
GNDS15PSecondary side ground return connection for VISO. Connect bypass capacitor from VISO to this pin.
NC6—Pins internally connected together. No other electrical connection. Pins belong to primary-side voltage domain. Connect to GNDP on printed circuit board.
7
8
10—No internal connection. Pin belongs to isolated voltage domain. Connect to GNDS on printed circuit board.
11
12
SYNC4ISynchronous clock input pin. Provide a clock signal to synchronize multiple devices or connect to GNDP for standalone operation using the internal oscillator. If the SYNC pin is left open make sure to it separate it from any switching noise to avoid false clock coupling.
SYNC_OK5OActive-low, open-drain diagnostic output. Pin is asserted LOW if there is no external SYNC clock or one that is outside of the operating range is detected. In this state, the external clock is ignored and the DC/DC converter is clocked by the internal oscillator. The pin is in high-impedance if a clock is applied on SYNC.
SEL13IVISO selection pin. VISO setpoint is 5.0 V when SEL is shorted to VISO, 5.4 V when SEL is connected to VISOthrough a 100-kΩ resistor, 3.3 V when SEL is shorted to GNDS, and 3.7 V when SEL is connected to GNDS through a 100-kΩ resistor. For more information see the Section 7.4 section.
VINP3PPrimary side input supply voltage pin. A 10-μF ceramic capacitor to GNDP on pin 2, placed close to the device pins, is required.
VISO14PIsolated supply voltage pin. A 10-μF ceramic capacitor to GNDS on pin 15, placed close to the device pins, is required. See Section 8.2.2.1 section.
(1) P = Power, G = Ground, I = Input, O = Output

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MINMAXUNIT
VINP to GNDP–0.36.0V
EN, SYNC, SYNC_OK, to GNDP –0.3VINP + 0.3,
≤ 6.0		V
VISO to GNDS–0.36.0V
SEL  to GNDS–0.3VISO + 0.3,
≤ 6.0		V
VISO output power at Ta = 25°C, POUT_MAX (2)675mW
Operating junction temperature range, TJ–40150°C
Storage temperature, Tstg–65150°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) See the Section 7.3.3 section for maximum rated values across temperature and VINP conditions for each different VISO output mode.

 
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