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  • TPS7H2201-SP 和 TPS7H2201-SEP 耐辐射 1.5V 至 7V、6A 电子保险丝

    • ZHCSIS8F September   2018  – March 2024 TPS7H2201-SEP , TPS7H2201-SP

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  • TPS7H2201-SP 和 TPS7H2201-SEP 耐辐射 1.5V 至 7V、6A 电子保险丝
  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Options
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: All Devices
    6. 6.6  Electrical Characteristics: CFP and KGD Options
    7. 6.7  Electrical Characteristics: HTSSOP Option
    8. 6.8  Switching Characteristics (All Devices)
    9. 6.9  Quality Conformance Inspection
    10. 6.10 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Enable, Undervoltage, and Overvoltage Protection
      2. 8.3.2 Adjustable Rise Time
      3. 8.3.3 Programmable Current Limiting
      4. 8.3.4 Programmable Fault Timer
      5. 8.3.5 Current Sense
      6. 8.3.6 Parallel Operation
      7. 8.3.7 Reverse Current Protection
      8. 8.3.8 Forward Leakage Current
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Redundancy
      2. 9.2.2 Protection
      3. 9.2.3 Design Requirements
      4. 9.2.4 Detailed Design Procedure
        1. 9.2.4.1 Undervoltage Lockout
        2. 9.2.4.2 Overvoltage Protection
        3. 9.2.4.3 Current Limit
        4. 9.2.4.4 Programmable Fault Timers
        5. 9.2.4.5 Soft Start Time
      5. 9.2.5 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
  14. 重要声明
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Data Sheet

TPS7H2201-SP 和 TPS7H2201-SEP 耐辐射 1.5V 至 7V、6A 电子保险丝

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

下载最新的英语版本

1 特性

  • 提供标准微型电路，SMD 5962R17220
  • 提供供应商项目图，VID V62/23608
  • 辐射性能：
    • 耐辐射保障 (RHA) 高达 TID 100krad(Si)
    • 单粒子锁定 (SEL)、单粒子烧毁 (SEB) 和单粒子栅穿 (SEGR) 对于 LET 的抗扰度 = 75MeV-cm2/mg
    • SEFI/SET 对于 LET 的
      额定抗扰度 = 75MeV-cm2/mg
  • 集成式单通道电子保险丝
  • 输入电压范围：1.5V 至 7V
  • 低导通电阻 (RON)：
    • 对于 CFP 和 KGD 封装，在 25°C 且 VIN = 5V 时的最大值为 35mΩ
    • 对于 HTSSOP 封装，在 25°C 且 VIN = 5V 时的最大值为 23mΩ
  • 6A 最大持续开关电流
  • 低控制输入阈值支持使用
    1.2V、1.8V、2.5V 和 3.3V 逻辑电平
  • 可配置上升时间（软启动）
  • 反向电流保护
  • 可编程和内部电流限制
    （快速跳变）
  • 可编程故障计时器（电流限制和
    重试模式）
  • 热关断
  • 带散热焊盘的陶瓷和塑料封装

2 应用

  • 航天卫星电源管理和配电
  • 耐辐射和抗辐射电源树应用
  • 支持军用（–55°C 至 125°C）温度范围

3 说明

TPS7H2201 是一款单通道电子保险丝，可提供用于更大限度地降低浪涌电流的可配置上升时间和反向电流保护。该器件包含一个可在 1.5V 至 7V 输入电压范围内运行的 P 沟道 MOSFET，并且支持 6A 的最大持续电流。开关由可与低压控制信号直接连接的打开和关闭输入 (EN) 控制。

TPS7H2201 采用具有集成散热焊盘的陶瓷和塑料封装，可支持高功率耗散。该器件在自然通风环境下的额定运行温度范围为
–55°C 至 125°C。

器件信息
器件型号(1) 等级 封装
5962R1722001VXC 飞行等级 RHA 100krad (Si) 16 引脚 CDFP
11.00 × 9.60mm
重量：1.56g(3)
5962-1722001VXC 飞行等级 QMLV
TPS7H2201HKR/EM 工程样片(2)
TPS7H2201MDAPTSEP 9 月 32 引脚 HTSSOP
6.10 × 11.00mm
重量：0.191g(3)
TPS7H2201EVM-CVAL 陶瓷评估板 EVM
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。另请参阅器件选项。
(2) 这些器件仅适用于工程评估。器件按照不合规的流程进行加工处理。这些器件不适用于鉴定、量产、辐射测试或飞行。也不保证这些器件在 MIL 规定的 –55°C 至 125°C 完整温度范围内或运行寿命中的性能。
(3) 尺寸和质量值为标称值。
GUID-20230126-SS0I-GRPT-DL20-PJ7RL2MSFPTJ-low.svg简化原理图

4 Device Options

GENERIC PART NUMBER RADIATION RATING(1) GRADE(2) PACKAGE ORDERABLE PART NUMBER
TPS7H2201-SP TID of 100 krad(Si) RLAT,
DSEE free to 75 MeV-cm2/mg		 QMLV-RHA 16-pin HKR CFP 5962R1722001VXC
QMLP-RHA 32-pin DAP HTSSOP 5962R1722002PYE
KGD (QMLV-RHA) Die 5962R1722001V9A
None Engineering Model (3) 16-pin HKR CFP PTS7H2201HKR/EM
Die TPS7H2201Y/EM
TPS7H2201-SEP TID of 50 krad(Si) RLAT,
DSEE free to 43 MeV-cm2/mg		 Space Enhanced Plastic 32-pin DAP HTSSOP TPS7H2201MDAPTSEP
(1) TID is total ionizing dose and DSEE is destructive single event effects. Additional information is available in the associated TID reports and SEE reports for each product.
(2) For additional information about part grade, view SLYB235.
(3) These units are intended for engineering evaluation only. They are processed to a non-compliant flow (such as no burn-in and only 25°C testing). These units are not suitable for qualification, production, radiation testing, or flight use. Parts are not warranted as to performance over temperature or operating life.

5 Pin Configuration and Functions

HKR Package DAP Package
16-Pin CFP With Thermal Pad 32-Pin HTSSOP With Thermal Pad
Top View Top View
GUID-47785CD7-1EA6-4DC7-8160-94A3FF281449-low.svg GUID-20230126-SS0I-V1BX-SJLV-MWRX16NHGGRB-low.svg
Table 5-1 Pin Functions
PIN I/O(1) DESCRIPTION
HKR (16) NO. PW (32) NO. NAME
1-4 1-10 VIN I Switch input. Input bypass capacitor recommended for minimizing VIN dip.
5 11 CS O Current sense pin proportional to output current. Connect a resistor to GND.
6 12 EN I Active high switch control input. Do not leave floating.
7 13 OVP I Overvoltage protection. Programmable using an external resistor divider. If no OVP is desired, this pin should be connected to GND.
8 15 GND — Device ground. (2)
9 18 RTIMER I/O Capacitor programmed fault timer control during disabled and retry mode. Connecting this pin to GND holds the switch disabled until the EN pin is cycled. Do not float this pin or connect it to VIN.
10 20 IL I/O Current limiter control. Programmable using an external resistor to GND. Do not float this pin.
11 21 ILTIMER I Capacitor programmed fault timer control during current limiting mode. Connecting this pin to VIN uses the internal current limit timer and connecting this pin to GND disables the internal timer functionality for the ILTIMER as well as retry mode. In this case, the device will remain at programmed current limit indefinitely in the event of a short without going intro retry mode. Do not float this pin.
12 22 SS I/O Switch slew rate control. See the Section 8.3.2 section for more information.
13-16 23-32 VOUT O Switch output. A minimum 10-µF output capacitor is recommended.
14,16,17,19 NC — No connect. This pin is not internally connected. It is recommended to connect these pins to GND to prevent charge buildup; however, these pins can also be left open or tied to any voltage between GND and VIN.
— Thermal Pad — Thermal pad (exposed center pad) for heat dissipation purposes. Thermal pad is internally connected to seal ring and GND.
(1) I = Input, O = Output, I/O = Input or Output, — = Other
(2) Thermal pad is internally connected to the seal ring and GND for HKR option.
Table 5-2 Bare Die Information
DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD METALLIZATION COMPOSITION BOND PAD THICKNESS
15 mils Silicon with backgrind Ground ALCU 1050 nm
GUID-20230502-SS0I-FWTZ-MBMH-2PJHWDDLZXRJ-low.svg
  1. All dimensions in microns (μm).
  2. The inner rectangle is the die and the outer rectangle is the die plus scribe lines.
Table 5-3 Bond Pad Coordinates in Microns
DESCRIPTION PAD NUMBER X MIN Y MIN X MAX Y MAX
VIN 1 611.78 4976.1 751.73 5116.05
VIN 2 258.17 4976.1 398.12 5116.05
VIN 3 258.17 4809.15 398.12 4949.1
VIN 4 611.78 4809.15 751.73 4949.1
VIN 5 258.17 4641.39 398.12 4781.34
VIN 6 611.78 4641.39 751.73 4781.34
VIN 7 258.17 4473.59 398.12 4613.54
VIN 8 611.78 4473.59 751.73 4613.54
VIN 9 258.17 3647.7 398.12 3787.65
VIN 10 611.78 3647.7 751.73 3787.65
VIN 11 258.17 3480.75 398.12 3620.7
VIN 12 611.78 3480.75 751.73 3620.7
VIN 13 258.17 3312.99 398.12 3452.94
VIN 14 611.78 3312.99 751.73 3452.94
VIN 15 258.17 3145.19 398.12 3285.14
VIN 16 611.78 3145.19 751.73 3285.14
VIN 17 258.17 2315.57 398.12 2455.52
VIN 18 611.78 2315.57 751.73 2455.52
VIN 19 258.17 2146.37 398.12 2286.32
VIN 20 611.78 2146.37 751.73 2286.36
AVDD 21 54.99 1842.03 194.94 1981.98
AVDD 22 54.99 1671.48 194.94 1811.43
CS 23 54.99 1480.77 194.94 1620.72
EN 24 54.99 972.68 194.94 1112.63
OVP 25 54.99 406.26 194.94 546.21
GND 26 407.21 54.99 547.16 194.94
GND 27 577.76 54.99 717.71 194.94
RTIMER 28 2792.88 54.99 2932.83 194.94
IL 29 3315.06 587.43 3455.01 727.38
ILTIMER 30 3315.06 1099.26 3455.01 1239.21
SS 31 3315.06 1544.09 3455.01 1684.04
VOUT 32 3111.66 2146.37 3251.61 2286.32
VOUT 33 2758.05 2146.37 2898 2286.32
VOUT 34 3111.66 2315.57 3251.61 2455.52
VOUT 35 2758.05 2315.57 2898 2455.52
VOUT 36 3111.66 3145.19 3251.61 3285.14
VOUT 37 2758.05 3145.19 2898 3285.14
VOUT 38 3111.66 3312.99 3251.61 3452.94
VOUT 39 2758.05 3312.99 2898 3452.94
VOUT 40 3111.66 3480.75 3251.61 3620.7
VOUT 41 2758.05 3480.75 2898 3620.7
VOUT 42 3111.66 3647.7 3251.61 3787.65
VOUT 43 2758.05 3647.7 2898 3787.65
VOUT 44 3111.66 4473.59 3251.61 4613.54
VOUT 45 2758.05 4473.59 2898 4613.54
VOUT 46 3111.66 4641.39 3251.61 4781.34
VOUT 47 2758.05 4641.39 2898 4781.34
VOUT 48 3111.66 4809.15 3251.61 4949.1
VOUT 49 2758.05 4809.15 2898 4949.1
VOUT 50 3111.66 4976.1 3251.61 5116.05
VOUT 51 2758.05 4976.1 2898 5116.05

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VIN Input voltage –0.3 7.5 V
VOUT Output voltage –0.3 7.5 V
EN, OVP Enable and over voltage protection pins –0.3 7.5 V
CS, ILTIMER, RTIMER, IL, SS Current sense, current limit timer, retry timer, current limit and soft start pins –0.3 VIN + 0.3 V
IMAX Maximum continuous switch current 9 A
IPLS Maximum pulsed switch current (t≤5µs) 45 A
TJ Maximum junction temperature –55 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage 1.5 7 V
SRVIN Input voltage slew rate 0.01 V/µs
VOUT Output voltage 0 7 (1) V
IMAX Maximum continuous switch current 6 A
TJ Operating junction temperature(2) –55 125 °C
(1) This maximum VOUT voltage is only applicable when the device is disabled (EN = Low). When the device is enabled (EN = High), the
maximum VOUT voltage is the input voltage, VIN.
(2) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(max)], the maximum power dissipation of the device in the application [PD(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θJA), as given by the equation: TA(max) = TJ(max) – (θJA × PD(max)).

6.4 Thermal Information

THERMAL METRIC (1) TPS7H2201-SP TPS7H2201-SEP UNIT
HKR (CFP) DAP (HTSSOP)
16 PINS 32 PINS
RθJA Junction-to-ambient thermal resistance 72.3 23.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 96.1 11.2
RθJB Junction-to-board thermal resistance 42.1 5.4
ψJT Junction-to-top characterization parameter 3.3 0.1
ψJB Junction-to-board characterization parameter 42.5 5.4
RθJC(bot) Junction-to-case (bottom) thermal resistance 0.6 0.5
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

 
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