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  • TPS7A39 双路、150mA、宽输入电压正负 LDO 稳压器

    • ZHCSGP0A July   2017  – September 2017 TPS7A39

      PRODUCTION DATA.  

  • CONTENTS
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  • TPS7A39 双路、150mA、宽输入电压正负 LDO 稳压器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Startup Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Voltage Regulation
        1. 7.3.1.1 DC Regulation
        2. 7.3.1.2 AC and Transient Response
      2. 7.3.2 User-Settable Buffered Reference
      3. 7.3.3 Active Discharge
      4. 7.3.4 System Start-Up Controls
        1. 7.3.4.1 Start-Up Tracking
        2. 7.3.4.2 Sequencing
          1. 7.3.4.2.1 Enable (EN)
          2. 7.3.4.2.2 Undervoltage Lockout (UVLO) Control
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Setting the Output Voltages on Adjustable Devices
      2. 8.1.2  Capacitor Recommendations
      3. 8.1.3  Input and Output Capacitor (CINx and COUTx)
      4. 8.1.4  Feed-Forward Capacitor (CFFx)
      5. 8.1.5  Noise-Reduction and Soft-Start Capacitor (CNR/SS)
      6. 8.1.6  Buffered Reference Voltage
      7. 8.1.7  Overriding Internal Reference
      8. 8.1.8  Start-Up
        1. 8.1.8.1 Soft-Start Control (NR/SS)
          1. 8.1.8.1.1 In-Rush Current
        2. 8.1.8.2 Undervoltage Lockout (UVLOx) Control
      9. 8.1.9  AC and Transient Performance
        1. 8.1.9.1 Power-Supply Rejection Ratio (PSRR)
        2. 8.1.9.2 Channel-to-Channel Output Isolation and Crosstalk
        3. 8.1.9.3 Output Voltage Noise
        4. 8.1.9.4 Optimizing Noise and PSRR
        5. 8.1.9.5 Load Transient Response
      10. 8.1.10 DC Performance
        1. 8.1.10.1 Output Voltage Accuracy (VOUTx)
        2. 8.1.10.2 Dropout Voltage (VDO)
      11. 8.1.11 Reverse Current
      12. 8.1.12 Power Dissipation (PD)
        1. 8.1.12.1 Estimating Junction Temperature
    2. 8.2 Typical Applications
      1. 8.2.1 Design 1: Single-Ended to Differential Isolated Supply
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Switcher Choice
          2. 8.2.1.2.2 Full Bridge Rectifier With Center-Tapped Transformer
          3. 8.2.1.2.3 Total Solution Efficiency
          4. 8.2.1.2.4 Feedback Resistor Selection
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Design 2: Getting the Full Range of a SAR ADC
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Detailed Design Description
          1. 8.2.2.3.1 Regulation of -0.2 V
          2. 8.2.2.3.2 Feedback Resistor Selection
        4. 8.2.2.4 Application Curves
  9. 9 Power-Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Board Layout Recommendations to Improve PSRR and Noise Performance
    2. 10.2 Layout Example
    3. 10.3 Package Mounting
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 评估模块
        2. 11.1.1.2 Spice 模型
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息
  13. 重要声明
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DATA SHEET

TPS7A39 双路、150mA、宽输入电压正负 LDO 稳压器

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 特性

  • 正负 LDO 包含在一个封装中
  • 宽输入电压范围:±3.3V 至 ±33V
  • 宽输出电压范围:
    • 正压范围:1.2V 至 30V
    • 负压范围:–30V 至 0V
  • 输出电流:每通道 150mA
  • 单调启动跟踪
  • 高电源抑制比 (PSRR):
    • 69dB (120Hz)
    • ≥ 50dB(10Hz 至 2MHz)
  • 输出电压噪声:21µVRMS (10Hz–100kHz)
  • 缓冲 1.2V 基准电压输出
  • 与 10µF 或更大的输出电容器一起工作时保持稳定
  • 单个正逻辑使能引脚
  • 可调软启动浪涌控制
  • 3mm × 3mm 10 引脚 WSON 封装
  • 低热阻:RθJA = 44.4°C/W
  • 工作温度范围:–40 至 +125°C

2 应用

  • 用于运算放大器、ADC、DAC 和其他高精度模拟电路的电源轨
  • 后级直流/直流调节和滤波
  • 模拟 I/O 模块
  • 测试和测量
  • Rx、Tx 和 PA 电路
  • 工业仪表
  • 医疗成像

3 说明

TPS7A39 器件是双路、单片、高 PSRR、正负极低压降 (LDO) 稳压器,支持高达 150mA 的拉电流(和灌电流)。该器件的稳压输出可在外部独立调节为对称或不对称电压,因此是进行信号调节的理想型双路双极性电源。

TPS7A39 的正负两种输出在启动期间相互进行比例跟踪,从而缓解双轨系统中常见的浮动状况和其他电源定序问题。负输出可调节至最高 0V,从而扩大单电源放大器的共模范围。TPS7A39 还 具有 高 PSRR,因此消除了可能影响信号完整性的电源噪声,例如开关噪声。

两个稳压器采用与标准数字逻辑对接的单个正逻辑使能引脚即可进行控制。可通过电容器编程的软启动功能将控制浪涌电流和启动时间。TPS7A39 的内部基准电压可用外部基准电压覆盖,从而实现精密输出、获得输出电压裕量或跟踪其他电源。此外,TPS7A39 具有缓冲基准输出,此输出可用作系统中其他组件的电压基准。

这些 特性 使得 TPS7A39 成为一种为运算放大器、数模转换器 (DAC) 以及其他精密模拟电路供电的强大而简化的解决方案。

器件信息(1)

器件型号 封装 封装尺寸(标称值)
TPS7A39 WSON (10) 3.00mm x 3.00mm
  1. 要了解所有可用封装,请参阅数据表末尾的可订购产品附录。

为信号链供电

TPS7A39 Front_Page_F.gif

单调启动跟踪

TPS7A39 tc_enable_startup.gif

4 修订历史记录

Changes from * Revision (July 2017) to A Revision

  • 产品投产Go

5 Pin Configuration and Functions

DSC Package
10-Pin WSON
Top View

Pin Functions

PIN I/O DESCRIPTION
NO. NAME
1 INP I Positive input. A 10-μF(1) or larger capacitor must be tied from this pin to ground to ensure stability. Place the input capacitor as close to the input as possible; see the Capacitor Recommendations section for more information.
2 EN I Enable pin. Driving this pin to logic high (VEN ≥ VIH(EN)) enables the device; driving this pin to logic low (VEN ≤ VIL(EN)) disables the device. If enable functionality is not required, this pin must be connected to INP; see the Application and Implementation section for more detail. The enable voltage cannot exceed the input voltage (VEN ≤ VINP).
3 NR/SS — Noise-reduction, soft-start pin. Connecting an external capacitor between this pin and ground reduces reference voltage noise and enables soft-start and start-up tracking. A 10-nF or larger capacitor (CNR/SS) is recommended to be connected from NR/SS to GND to maximize or optimize ac performance and to ensure start-up tracking. This pin can also be driven externally to provide greater output voltage accuracy and lower noise, see the User-Settable Buffered Reference section for more information.
4 GND — Ground pin. This pin must be connected to ground and the thermal pad with a low-impedance connection.
5 INN I Negative input. A 10-μF(1) or larger capacitor must be tied from this pin to ground to ensure stability. Place the input capacitor as close to the input as possible; see the Capacitor Recommendations section for more information.
6 OUTN O Negative output. A 10-μF(1) or larger capacitor must be tied from this pin to ground to ensure stability. Place the output capacitor as close to the output as possible; see the Capacitor Recommendations section for more information.
7 FBN I Negative output feedback pin. This pin is used to set the negative output voltage. Although not required, a 10-nF feed-forward capacitor from FBN to OUTN (as close to the device as possible) is recommended to maximize ac performance. Nominally this pin is regulated to VFBN. Do not connect to ground.
8 BUF O Buffered reference output. This pin is connected to FBN through R2 and the voltage at this node is inverted and scaled up by the negative feedback network to provide the desired output voltage. The buffered reference can be used to drive external circuits, and has a 1-mA maximum load.
9 FBP I Positive output feedback pin. This pin is used to set the positive output voltage. Although not required, a 10-nF feed-forward capacitor from FBP to OUTP (as close to the device as possible) is recommended to maximize ac performance. Nominally this pin is regulated to VFBP. Do not connect this pin directly to ground.
10 OUTP O Positive output. A 10-μF(1) or larger capacitor must be tied from this pin to ground to ensure stability. Place the output capacitor as close to the output as possible; see the Capacitor Recommendations section for more information.
Pad Thermal Pad — Connect the thermal pad to a large-area ground plane. The thermal pad is internally connected to GND.
(1) The nominal input and output capacitance must be greater than 2.2 µF; throughout this document the nominal derating on these capacitors is 80%. Take care to ensure that the effective capacitance at the pin is greater than 2.2 µF.

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Voltage INP –0.3 36 V
INN –36 0.3
OUTP –0.3 VINP + 0.3(5)
OUTN VINN – 0.3(4) 0.3
FBP –0.3 VINP + 0.3(7)
BUF –1 VINP + 0.3(7)
NR/SS –0.3 VINP + 0.3(8)
FBN VINN – 0.3(3) 0.3
EN –0.3 VINP + 0.3(6)
Current Output current Internally limited
Buffer current 2 mA
Temperature Operating junction temperature, TJ –55 150 °C
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages with respect to the ground pin, unless otherwise noted.
(3) The absolute maximum rating is VINN – 0.3 V or –3 V, whichever is greater.
(4) The absolute maximum rating is VINN – 0.3 V or –33 V, whichever is greater.
(5) The absolute maximum rating is VINP + 0.3 V or 33 V, whichever is smaller.
(6) The absolute maximum rating is VINP + 0.3 V or 36 V, whichever is smaller.
(7) The absolute maximum rating is VINP + 0.3 V or 3 V, whichever is smaller.
(8) The absolute maximum rating is VINP + 0.3 V or 2 V, whichever is smaller.

6.2 ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
|VINx| Supply voltage magnitude for either regulator 3.3 33 V
VEN Enable supply voltage 0 VINP V
VOUTP Positive regulated output voltage range VFBP 30 V
VOUTN Negative regulated output voltage range –30 VFBN V
IOUTx Output current for either regulator 0.005(2) 150 mA
IBUF Output current from the BUF pin 0 120 1000 µA
CINx Input capacitor for either regulator 4.7 10(1) µF
COUTx Output capacitor for either regulator 4.7 10(1) µF
CNR/SS Noise-reduction and soft-start capacitor 0(3) 10 1000 nF
CFFP Positive channel feed-forward capacitor; connect from VOUTP to FBP 0 10 100 nF
CFFN Negative channel feed-forward capacitor; connect from VOUTN to FBN 0 10 100 nF
R2P Lower positive feedback resistor 10 240 kΩ
R2N Lower negative feedback resistor (from FBN to BUF) 10 240 kΩ
TJ Operating junction temperature –40 125 °C
(1) The nominal input and output capacitor value of 10-µF accounts for the derating factors that apply to X5R and X7R ceramic capacitors. The assumed overall derating is 80%.
(2) Minimum load required when feedback resistors are not used. If feedback resistors are used, keeping R2x below 240 kΩ satisfies this requirement.
(3) For startup tracking to function correctly a minimum 4.7-nF CNR/SS capacitor must be used.

6.4 Thermal Information

THERMAL METRIC(1) TPS7A39 UNIT
DSC (WSON)
10 PINS
RθJA Junction-to-ambient thermal resistance 44.4 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 33.7 °C/W
RθJB Junction-to-board thermal resistance 19.4 °C/W
ψJT Junction-to-top characterization parameter 0.4 °C/W
ψJB Junction-to-board characterization parameter 19.5 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance 2.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

at TJ = –40°C to +125°C, VINP(nom) = VOUTP(nom) + 1 V or VIN(nom) = 3.3 V (whichever is greater), VINN(nom) = VOUTN(nom) – 1 V or VINN(nom) = –3.3 V (whichever is less), VEN = VINP, IOUT = 1 mA, CINx = 2.2 μF, COUTx = 10 μF, CFFx = CNR/SS = open, R1N = R2N = 10 kΩ, and FBP tied to OUTP (unless otherwise noted); typical values are at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VINP Input voltage range, positive channel 3.3 33 V
VINN Input voltage range, negative channel –33 –3.3 V
VUVLOP(rising) Undervoltage lockout threshold,
positive channel
VINP rising, VINN = –3.3 V 1.4 3.1 V
VUVLOP(hys) Undervoltage lockout threshold, positive channel hysteresis VINP falling, VINN = –3.3 V 120 mV
VUVLON(falling) Undervoltage lockout threshold,
negative channel
VINN falling, VINP = 3.3 V –3.1 –1.4 V
VUVLON(hys) Undervoltage lockout threshold, negative channel, hysteresis VINN rising, VINP = 3.3 V 70 mV
VNR/SS Internal reference voltage 1.172 1.19 1.208 V
VFBP Positive feedback voltage 1.170 1.188 1.206 V
VFBN Negative feedback voltage –10 3.7 10 mV
VOUT Output voltage range(2) Positive channel VFBP 30 V
Negative channel –30 VFBN(1)
VOUTP accuracy VINP(nom) ≤ VINP ≤ 33 V, 1 mA ≤ IOUTP ≤ 150 mA,
1.2 V ≤ VOUTP(nom) ≤ 30 V
–1.5 1.5 %VOUT
VOUTN accuracy(3) –33 V ≤ VINN ≤ VINN(nom), –150 mA ≤ IOUTN ≤ –1 mA, –30 V ≤ VOUTN(nom) ≤ –1.2 V –3 3 %VOUT
Negative VOUT channel accuracy –33 V ≤ VINN ≤ VINN(nom) , –150 mA ≤ IOUTN ≤ 1 mA, –1.2 V < VOUTN(nom) < 0 V –36 36 mV
–33 V ≤ VINN ≤ VINN(nom) , –150 mA ≤ IOUTN ≤ 1 mA, VOUTN(nom) = 0 V –12 12
ΔVOUT(ΔVIN) / VOUT(NOM) Line regulation, positive channel  VINP(nom) ≤ VINP ≤ 33 V 0.035 %VOUT
Line regulation, negative channel –33 V ≤ VINN ≤ VOUT(nom) + 1 V 0.125
ΔVOUT(ΔIOUT) / VOUT(NOM) Load regulation, positive channel  1 mA ≤ IOUTP ≤ 150 mA –0.09 %VOUT
Load regulation, negative channel –150 mA ≤ IOUTN ≤ –1 mA 0.715
VDO Dropout voltage Positive channel IOUTP = 50 mA, 3.3 V ≤ VINP(nom) ≤ 33.0 V,
VFBP = 1.070 V
175 300 mV
IOUTP = 150 mA, 3.3 V ≤ VINP(nom) ≤ 33.0 V,
VFBP = 1.070 V
300 500
Negative channel IOUTN = –50 mA, –3.3 V ≤ VINN(nom) ≤ –33.0 V,
VFBN = 0.0695 V
–250 –145
IOUTN = –150 mA, –3.3 V ≤ VINN(nom) ≤ –33.0 V,
VFBN = 0.0695 V
–400 –275
VBUF Buffered reference output voltage VNR/SS V
VBUF/IBUF Buffered reference load regulation IBUF = 100 µA to 1 mA 1 mV/mA
VBUF – VNR/SS Output buffer offset voltage VNR/SS = 0.25 V to 1.2 V –4 3 8 mV
VOUTP–VOUTN DC output voltage difference with a forced REF voltage VNR/SS = 0.25 V to 1.2 V –10 10 %VNR/SS
ILIM Current limit Positive channel VOUTP = 90% VOUTP(nom) 200 330 500 mA
Negative channel VOUTN = 90% VOUTN(nom) –500 –300 –200
ISUPPLY Supply current Positive channel IOUTP = 0 mA, R2N = open, VINP = 33 V 75 150 µA
IOUTP = 150 mA, R2N = open, VINP = 33 V 904
Negative channel IOUTN = 0 mA, VOUTN(nom)= 0 V, R2N = open, VINN = –33 V –150 –60
IOUTN = 150 mA, R2N = open, VINN = –33 V –1053
ISHDN Shutdown supply current Positive channel VEN = 0.4 V, VINP = 33 V 3.75 6.5 µA
Negative channel VEN = 0.4 V, VINN = –33 V –4.5 –2.25
IFBx Feedback pin leakage current Positive channel 5.5 100 nA
Negative channel –100 –9.7
INR/SS Soft-start charging current VNR/SS = 0.9 V 3 5.1 6.7 µA
IEN Enable pin leakage current VEN = VINP = 33 V 0.02 1 µA
VIH(EN) Enable high-level voltage 2.2 VINP V
VIL(EN) Enable low-level voltage 0 0.4 V
PSRR Power-supply rejection ratio |VIN| = 6 V, |VOUT(nom)| = 5 V, COUT = 10 μF, CNR/SS = CFF= 10 nF, f = 120 Hz 69 dB
Vn Output noise voltage Positive channel VINP = 3.3 V, VOUTP(nom) = VNR/SS, COUTP = 10 μF, CNR/SS = 10 nF, BW = 10 Hz to 100 kHz 20.63 µVRMS
VINP = 6 V, VOUTP(nom) = 5 V, COUTP = 10 μF, CNR/SS = CFF = 10 nF, BW = 10 Hz to 100 kHz 26.86
Negative channel VINN = –3 V, VOUTN(nom) = –VNR/SS, COUTP = 10 μF, CNR/SS = 10 nF, BW = 10 Hz to 100 kHz 22.13
VINN = –6 V, VOUTN(nom) = –5 V, COUTP = 10 μF, CNR/SS = CFF= 10 nF, BW = 10 Hz to 100 kHz 28.68
RNR/SS Filter resistor from band gap to NR pin 350 kΩ
Tsd Thermal shutdown temperature Shutdown, temperature increasing 175 °C
Reset, temperature decreasing 160
(1) VOUT(target) = 0 V, R1N = 10 kΩ, R2N = open.
(2) To ensure VOUT does not drift up while the device is disabled, a minimum load current of 5 µA is required.
(3) The device is not tested under conditions where the power dissipated across the device, PD, exceeds 2 W.

6.6 Startup Characteristics

at TJ = –40°C to +125°C, VINP(nom) = VOUTP(nom) + 1 V or VIN(nom) = 3.3 V (whichever is greater), VINN(nom) = VOUTN(nom) – 1 V or VINN(nom) = –3.3 V (whichever is less), VEN = VINP, IOUT = 1 mA, CINx = 2.2 μF, COUTx = 10 μF, CFFx = CNR/SS = 4.7nF, R1N = R2N = 10 kΩ, and FBP tied to OUTP (unless otherwise noted); typical values are at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tEN(delay) Delay time from EN low-to-high transition to 2.5% VOUTP From EN low-to-high transition to VOUTP = 2.5% × VOUTP(nom) 300 µs
tstart-up Delay time from EN low-to-high transition to both outputs reaching 95% of final value From EN low-to-high transition to VOUTP = VOUTP(nom) × 95% and VOUTN = VOUTN(nom) × 95% 1.1 ms
tPstart-Nstart Delay time from VOUTP leaving a high-impedance state to VOUTN leaving a high-impedance state From VOUTP = VOUTP(nom) × 2.5%  to VOUTN = VOUTN(nom) × 2.5% –40 –17 40 µs
Δ|VOUTP – VOUTN| Voltage difference between the positive and negative output During tPstart-Nstart 75 300 mV
TPS7A39 Timing_Diagram.gif

NOTE:

Slow ramps (trise(VINx) > 10 ms typically) on VINx with EN tied to VINP does not meet the tracking specification. Use a resistor divider from VINP to EN for these applications.
Figure 1. Start-Up Characteristics

6.7 Typical Characteristics

at TJ = 25°C, VINP = VOUTP(nom) + 1.0 V or VIN = 3.3 V (whichever is greater), VINN = VOUTN(nom) – 1 V or –3.3 V (whichever is less), VEN = VIN, IOUT = 1 mA, CIN = 10-μF ceramic, COUT = 10-μF ceramic, and CFFP = CFFN = CNR/SS = 10 nF (unless otherwise noted)
TPS7A39 tc_PSRR_vs_Vin_p5V_PosReg.gif
VOUTP = 5 V, IOUTP = 150 mA, VOUTN = –5 V, IOUTN = 0 mA, CNR/SS = CFFx = 10 nF
Figure 2. Positive PSRR vs Frequency and VINP
TPS7A39 tc_PSRR_vs_Iout_posReg_p5V.gif
VOUTP = 5 V, VINP = VEN = 6 V, VOUTN = –5 V, IOUTN = 0 mA, CNR/SS = CFFx = 10 nF
Figure 4. Positive PSRR vs Frequency and IOUTP
TPS7A39 tc_PSRR_vs_COUT_5Vout.gif
VOUTP = 5 V, VINP = VEN = 6 V, VOUTN = –5 V, IOUTN = 0 mA, CNR/SS = CFFx = 10 nF
Figure 6. Positive PSRR vs Frequency and COUTP
TPS7A39 tc_PSRR_vs_CFF_5Vout.gif
VOUTP = 5 V, VINP = VEN = 6 V, VOUTN = –5 V, IOUTN = 0 mA, CNR/SS = 10 nF
Figure 8. Positive PSRR vs Frequency and CFFP
TPS7A39 tc_PSRR_vs_CNR_5Vout.gif
VOUTP = 5 V, VINP = VEN = 6 V, VOUTN = –5 V, IOUTN = 0 mA,
CFFx = 10 nF
Figure 10. Positive PSRR vs Frequency and CNR/SS
TPS7A39 tc_CrossTalk_posToNeg.gif
Figure 12. Crosstalk Positive to Negative
TPS7A39 tc_Noise_vs_Vout_PosReg.gif
IOUTP = 150 mA, VINP = VEN, VOUTN = –VOUTP, IOUTN = 0 mA, CNR/SS = CFFx = 10 nF
Figure 14. Positive Spectral Noise Density vs Frequency and VOUTP
TPS7A39 tc_Noise_vs_Cnr_PosReg.gif
VOUTP = 5 V, IOUTP = 150 mA, VINP = VEN = 6 V, VOUTN = –5 V, IOUTN = 0 mA, CFFx = 10 nF
Figure 16. Positive Spectral Noise Density vs Frequency and CNR/SS
TPS7A39 tc_Noise_vs_Cff_PosReg.gif
VOUTP = 5 V, IOUTP = 150 mA, VINP = VEN = 6 V, VOUTN = –5 V, IOUTN = 0 mA, CNR/SS = 10 nF
Figure 18. Positive Spectral Noise Density vs Frequency and CFF
TPS7A39 tc_Noise_vs_Cout_PosReg.gif
VOUTP = 5 V, IOUTP = 150 mA, VINP = VEN = 6 V, VOUTN = –5 V, IOUTN = 0 mA, CNR/SS = CFFx = 10 nF
Figure 20. Positive Spectral Noise Density vs Frequency and COUT
TPS7A39 tc_Noise_vs_Iout_PosReg.gif
VOUTP = 5 V, VINP = VEN = 6 V, VOUTN = –5 V, IOUTN = 0 mA, CNR/SS = CFFx = 10 nF
Figure 22. Positive Spectral Noise Density vs Frequency and IOUT
TPS7A39 tc_vin_startup.gif
VOUTP = –VOUTN = 5 V, VINP = –VINN = 12 V
Figure 24. Startup (VINP = VEN)
TPS7A39 tc_PosReg_LineTransient_1VperUs.gif
VINP = 5.5 V to 10 V at 1 V/µs, VOUTP = –VOUTN = 5 V,
IOUTN = 0 mA, IOUTP = 150 mA
Figure 26. Line Transient Positive Regulator
TPS7A39 tc_PosReg_LineTransient_4VperUs.gif
VINP = 5.5 V to 10 V at 4 V/µs, VOUTP = –VOUTN = 5 V,
IOUTN = 0 mA, IOUTP = 150 mA
Figure 28. Line Transient Positive Regulator
TPS7A39 tc_PosReg_LoadTransient_1AperUs.gif
VINP = 6 V, VOUTP = –VOUTN = 5 V, IOUTN = 0 mA,
IOUTP = 1 mA to 150 mA at 1 A/µs
Figure 30. Load Transient Positive Regulator
TPS7A39 tc_lineregulation_0V.gif
VOUTN = 0 V
Figure 32. Negative Line Regulation
TPS7A39 tc_linereg_n1p2V_percent.gif
VOUTN = –1.19 V
Figure 34. Negative Line Regulation
TPS7A39 tc_linereg_n24V_percent.gif
VOUTN = –24 V
Figure 36. Negative Line Regulation
TPS7A39 tc_loadreg_n15V_percent.gif
VOUTN = –15 V, VINN = –16 V
Figure 38. Negative Load Regulation
TPS7A39 tc_loadreg_1p2V_percent.gif
VOUTP = 1.188 V, VINP = 3.3 V
Figure 40. Positive Load Regulation
TPS7A39 tc_loadreg_30V_percent.gif
VOUTP = 30 V, VINP = 33 V
Figure 42. Positive Load Regulation
TPS7A39 tc_linereg_15V_percent.gif
VOUTP = 15 V
Figure 44. Positive Line Regulation
TPS7A39 tc_currentLimit_pos1p2V.gif
VOUTP = 1.188 V
Figure 46. Positive Regulator Current Limit
TPS7A39 tc_dropout_150mA_posreg.gif
Figure 48. Positive Regulator Dropout Voltage vs
Input Voltage
TPS7A39 tc_dropout_vs_load_3p3V.gif
VINP = 3.3 V
Figure 50. Positive Regulator Dropout Voltage vs
Output Current
TPS7A39 tc_enable_threshold.gif
Figure 52. Enable Threshold vs Temperature
TPS7A39 tc_positive_activedischarge.gif
Figure 54. Positive Output Discharge Current vs
Output Voltage
TPS7A39 tc_SupplyCurrent_vs_outputCurrent_1p2V_PosReg.gif
VOUTP = 1.188 V
Figure 56. Positive Supply Current vs Output Current
TPS7A39 tc_Vbuf_vs_Iout_SBVS322.gif
VOUTN = –1.19 V
Figure 58. Buffer Accuracy vs Buffer Current
TPS7A39 tc_PSRR_vs_Vin_n5V_NegReg.gif
VOUTP = 5 V, IOUTP = 0 mA, VOUTN = –5 V, IOUTN = 150 mA, CNR/SS = CFFx = 10 nF
Figure 3. Negative PSRR vs Frequency and VINN
TPS7A39 tc_PSRR_vs_Iout_NegReg.gif
VOUTP = 5 V, IOUTP = 0 mA, VINN = –6 V, VOUTN = –5 V,
CNR/SS = CFFx = 10 nF
Figure 5. Negative PSRR vs Frequency and IOUTN
TPS7A39 tc_PSRR_vs_Cout_NegReg.gif
VOUTP = 5 V, IOUTP = 0 mA, VINN = –6 V, VOUTN = –5 V,
CNR/SS = CFFx = 10 nF, COUTP = 10 µF
Figure 7. Negative PSRR vs Frequency and COUTN
TPS7A39 tc_PSRR_vs_Cff_NegReg.gif
VOUTP = 5 V, IOUTP = 0 mA, VINN = –6 V, VOUTN = –5 V,
CNR/SS = CFFP = 10 nF
Figure 9. Negative PSRR vs Frequency and CFFN
TPS7A39 tc_PSRR_vs_Cnr_NegReg.gif
VOUTP = 5 V, IOUTP = 0 mA, VINN = –6 V, VOUTN = –5 V,
CFFx = 10 nF
Figure 11. Negative PSRR vs Frequency and CNR/SS
TPS7A39 tc_CrossTalk_negToPos.gif
Figure 13. Crosstalk Negative to Positive
TPS7A39 tc_Noise_vs_Vout_NegReg.gif
IOUTN = –150 mA, VINP = VEN, VOUTN = –VOUTP, IOUTP = 0 mA, CNR/SS = CFFx = 10 nF
Figure 15. Negative Spectral Noise Density vs Frequency and VOUTN
TPS7A39 tc_Noise_vs_Cnrss_NegReg.gif
VOUTN = –5 V, IOUTN = –150 mA, VINP = VEN = 6 V, VOUTN = –5 V, IOUTP = 0 mA, CFFx = 10 nF
Figure 17. Negative Spectral Noise Density vs Frequency and CNR/SS
TPS7A39 tc_Noise_vs_Cff_NegReg.gif
VOUTN = –5 V, IOUTN = –150 mA, VINP = VEN = 6 V, VOUTN = –5 V, IOUTP = 0 mA, CNR/SS = 10 nF
Figure 19. Negative Spectral Noise Density vs Frequency and CFF
TPS7A39 tc_Noise_vs_Cout_NegReg.gif
VOUTN = –5 V, IOUTN = –150 mA, VINP = VEN = 6 V, VOUTN = –5 V, IOUTP = 0 mA, CNR/SS = CFFx = 10 nF
Figure 21. Negative Spectral Noise Density vs Frequency and COUT
TPS7A39 tc_Noise_vs_Iout_NegReg.gif
VOUTN = –5 V, VINP = VEN = 6 V, VOUTN = –5 V, IOUTP = 0 mA, CNR/SS = CFFx = 10 nF
Figure 23. Negative Spectral Noise Density vs Frequency and IOUT
TPS7A39 tc_enable_startup.gif
VOUTP = –VOUTN = 5 V, VINP = –VINN = 15 V
Figure 25. Startup With EN
TPS7A39 tc_NegReg_LineTransient_1VperUs.gif
VINN = –5.5 V to –10 V at 1 V/µs, VOUTP = –VOUTN = 5 V,
IOUTN = –150 mA, IOUTP = 0 mA
Figure 27. Line Transient Negative Regulator
TPS7A39 tc_NegReg_LineTransient_4VperUs.gif
VINN = –5.5 V to –10 V at 4 V/µs, VOUTP = –VOUTN = 5 V,
IOUTN = –150 mA, IOUTP = 0 mA
Figure 29. Line Transient Negative Regulator
TPS7A39 tc_NegReg_LoadTransient_1AperUs.gif
VINN = –6 V, VOUTP = –VOUTN = 5 V, IOUTN = 0 mA,
IOUTN = –1 mA to –150 mA at 1 A/µs
Figure 31. Load Transient Negative Regulator
TPS7A39 tc_loadreg_0V_absolute.gif
VOUTN = 0 V, VINN = –3.3 V
Figure 33. Negative Load Regulation
TPS7A39 tc_linereg_n15V_percent.gif
VOUTN = –15 V
Figure 35. Negative Line Regulation
TPS7A39 tc_loadreg_n1p2V_percent.gif
VOUTN = –1.2 V, VINN = –3.3 V
Figure 37. Negative Load Regulation
TPS7A39 tc_loadreg_n30V_percent.gif
VOUTN = –30 V, VINN = –33 V
Figure 39. Negative Load Regulation
TPS7A39 tc_loadreg_15V_percent.gif
VOUTP = 15 V, VINP = 16 V
Figure 41. Positive Load Regulation
TPS7A39 tc_linereg_1p2V_percent.gif
VOUTP = 1.188 V
Figure 43. Positive Line Regulation
TPS7A39 tc_linereg_24V_percent.gif
VOUTP = 24 V
Figure 45. Positive Line Regulation
TPS7A39 tc_currentLimit_neg1p2V.gif
VOUTN = –1.19 V
Figure 47. Negative Regulator Current Limit
TPS7A39 tc_dropout_150mA_negreg.gif
Figure 49. Negative Regulator Dropout Voltage vs
Input Voltage
TPS7A39 tc_dropout_vs_load_n3p3V.gif
VOUTN = –3.3 V
Figure 51. Negative Regulator Dropout Voltage vs
Output Current
TPS7A39 tc_NR_current_vs_voltage.gif
Figure 53. INR/SS vs VNR/SS
TPS7A39 tc_negative_activedischarge.gif
Figure 55. Negative Output Discharge Current vs
Output Voltage
TPS7A39 tc_SupplyCurrent_vs_outputCurrent_n1p2V_NegReg.gif
VOUTN = –1.19 V
Figure 57. Negative Supply Current vs Output Current

7 Detailed Description

7.1 Overview

The TPS7A39 is an innovative linear regulator (LDO) targeted at powering the signal chain, capable of up to ±33 V on the inputs and regulating up to ±30 V on the outputs at up to 150 mA of load current. The device uses an LDO topology that, by design, delivers ratiometric start-up tracking in most applications. The TPS7A39 has several other features, as listed in Table 1, that simplify using the device in a variety of applications.

NOTE

Throughout this document, x is used to designate that the condition or component applies to both the positive and negative regulators (for example, CFFx means CFFP and CFFN).

Table 1. TPS7A39 Features

VOLTAGE REGULATION SYSTEM START-UP INTERNAL PROTECTION
Reference input/output Ratiometric start-up tracking Current limit
High-PSRR output Programmable soft-start Thermal shutdown
Fast transient response Sequencing controls

7.2 Functional Block Diagram

TPS7A39 fbd_sbvs263.gif

7.3 Feature Description

7.3.1 Voltage Regulation

7.3.1.1 DC Regulation

An LDO functions as a buffered op-amp in which the input signal is the internal reference voltage (VNR/SS), as shown in Figure 59, and in normal regulation VFBP = VNR/SS. Sharing a single reference ensures that both channels track each other during start-up.

VNR/SS is designed to have a very low-bandwidth at the input to the error amplifier through the use of a low-pass filter. As such, the reference can be considered as a pure dc input signal.

As Figure 60 shows, the negative LDO on the device regulates with a VFBN = 0 V and inverts the positive reference (VBUF). This topology allows the negative regulator to regulate down to 0 V.

TPS7A39 ai_Simplified_Positive_Reg.gif Figure 59. Simplified Positive Regulation Circuit
TPS7A39 ai_Simplified_Negative_Reg.gif Figure 60. Simplified Negative Regulation Circuit

7.3.1.2 AC and Transient Response

Each LDO responds quickly to a transient on the input supply (line transient) or the output current (load transient). This LDO has a high power-supply rejection ratio (PSRR) and, when coupled with a low internal noise-floor (Vn), the LDO approximates an ideal power supply in ac and large-signal conditions.

The performance and internal layout of the device minimizes the coupling of noise from one channel to the other channel (crosstalk). Good printed circuit board (PCB) layout minimizes the crosstalk.

The noise-reduction and soft-start capacitor (CNR/SS) and feed-forward capacitor (CFFx) easily reduce the device noise floor and improve PSRR; see the Optimizing Noise and PSRR section for more information on optimizing the noise and PSRR performance.

7.3.2 User-Settable Buffered Reference

As Figure 61 shows, the device internally generated band-gap voltage outputs at the NR/SS pin. An internal resistor (RNR) and an external capacitor (CNR/SS) control the rise time of the voltage at the VNR/SS pin, setting the soft-start time. This network also filters out noise from the band gap, reducing the overall noise floor of the device.

Driving the NR/SS pin with an external source can improve the device accuracy and can reduce the device noise floor, along with enabling the device to regulate the positive channel to voltages below the device internal reference.

TPS7A39 ai_Simplified_SoftStart.gif

NOTE:

* denotes external components.
Figure 61. Simplified Reference Circuit

7.3.3 Active Discharge

When either EN or UVLOx are low, the device connects a resistance from VOUTx to GND, discharging the output capacitance. The active discharge circuit requires |VOUTx| ≥ 0.6 V (typ) to discharge the output because the NPN pulldown has a minimum VCE requirement.

Do not rely on the active discharge circuit for discharging large output capacitors when the input voltage drops below the targeted output voltage. The TPS7A39 is a bipolar device, and as such, reverse voltage conditions (|VOUTx| ≥ |VINX| + 0.3 V) can breakdown the emitter to base diode and also cause a breakdown of the parasitic bipolar formed in the substrate; see the Reverse Current section for more details.

When either EN or UVLOx are low, the device outputs a small amount of leakage current. The leakage current is typically handled by the maximum R2x resistor value of 240 kΩ. However, if the device is placed in unity gain (no R2x resistor) this leakage current causes the output to slowly rise until the discharge circuit (as shown in Figure 62) has enough headroom to clamp the output voltage (typically ±0.6 V).

TPS7A39 ai_Simplified_Active_Discharge.gif Figure 62. Simplified Active Discharge Circuit

7.3.4 System Start-Up Controls

In many different applications, the power-supply output must turn-on within a specific window of time because of sequencing requirements, ensuring proper operation of the load, or to minimize the loading on the input supply.

Both LDOs start-up are well-controlled and user-adjustable through the CNR/SS capacitor, solving the demanding requirements faced by many power-supply design engineers in a simple fashion. For start-up tracking to work correctly. a minimum 4.7-nF CNR/SS capacitor is required. For more information on startup tracking, see the Noise-Reduction and Soft-Start Capacitor (CNR/SS) section.

7.3.4.1 Start-Up Tracking

Figure 63 shows how both regulators use a common reference, which enables start-up tracking. Using the same reference voltage for both the positive and negative regulators ensures that the regulators start-up together in a controlled fashion; see Figure 24 and Figure 25.

Ramps on VINx with EN = VINP that are slower than the soft-start time do not have start-up tracking. If ramps slower than the soft-start time are used then enable should be used to start the device to ensure start-up tracking. A small mismatch between the positive and negative internal enable thresholds means that one channel turns on at a slightly lower input voltage than the other channel. This mismatch is typically not a problem in most applications and is easily solved by controlling the start-up with enable. The external signal can come from the input power supply power-good indicator, a voltage supervisor output such as the TPS3701, or from another source.

TPS7A39 ai_Simplified_Startup_Tracking.gif Figure 63. Simplified Regulation Circuit

7.3.4.2 Sequencing

Figure 64 and Table 2 describe how the turn-on and turn-off times of both LDOs (respectively) is controlled by setting the enable circuit (EN) and undervoltage lockout circuit (UVLOP and UVLON).

TPS7A39 ai_Simplified_EN.gif Figure 64. Simplified Turn-On Control

Table 2. Sequencing Functionality Table

POSITIVE INPUT VOLTAGE (VINP) NEGATIVE INPUT VOLTAGE (VINN) ENABLE STATUS LDO STATUS ACTIVE DISCHARGE
VINP ≥ VUVLOP VINN ≤ VUVLON EN = 1 On Off
EN = 0 Off On(1)
VINP ≥ VUVLOP VINN > VUVLON EN = don't care Off On(1)
VINP < VUVLOP VINN ≤ VUVLON EN = don't care Off On(1)
VINP < VUVLOP – VHYSP VINN > VUVLON – VHYSN EN = don't care Off On(1)
(1) The active discharge remains on as long as VINx and VOUTx provide enough headroom for the discharge circuit to function.

7.3.4.2.1 Enable (EN)

The enable signal (VEN) is an active-high digital control that enables the LDO when the enable voltage is past the rising threshold (VEN ≥ VIH(EN)) and disables the LDO when the enable voltage is below the falling threshold (VEN ≤ VIL(EN)). The exact enable threshold is between VIH(EN) and VIL(EN) because EN is a digital control. In applications that do not use the enable control, connect EN to VINP.

A slow VINx ramp directly connecting EN to VINP can cause the start-up tracking to move out of specification. Under slow ramp conditions, use a resistor divider from VINP to ensure start-up tracking.

7.3.4.2.2 Undervoltage Lockout (UVLO) Control

The UVLO circuit responds quickly to glitches on the input supplies and attempts to disable the output of the device if either of these rails collapse.

As a result of the fast response time of the input supply UVLO circuit, fast and short line transients well below the input supply UVLO falling threshold (brownouts) can cause momentary glitches during the edges of the transient. These glitches are typical in most LDOs. The local input capacitance prevents severe brown-outs in most applications; see the Undervoltage Lockout (UVLOx) Control section for more details. Fast line transients can cause the outputs to momentarily shut off, and can be mitigated through using the recommended 10-µF input capacitor. If this becomes a problem in the system, increasing the input capacitance prevents these glitches from occurring.

7.4 Device Functional Modes

7.4.1 Normal Operation

The device regulates to the nominal output voltage under the following conditions:

  • The input voltage is at least as high as |VINx(min)|
  • The input voltage is greater than the nominal output voltage added to the dropout voltage
  • The enable voltage has previously exceeded the enable rising threshold voltage and has not decreased below the enable falling threshold
  • The output current is less than the current limit
  • The device junction temperature is less than TSD

7.4.2 Dropout Operation

If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other conditions are met for normal operation, the device operates in dropout mode. In this mode of operation, the output voltage is the same as the input voltage minus the dropout voltage. The transient performance of the device is significantly degraded because the pass device (as a bipolar junction transistor, or BJT) is in saturation and no longer controls the current through the LDO. Line or load transients in dropout can result in large output voltage deviations.

7.4.3 Disabled

The device is disabled under the following conditions:

  • The enable voltage is less than the enable falling threshold voltage or has not yet exceeded the enable rising threshold
  • The device junction temperature is greater than the thermal shutdown temperature

Table 3 shows the conditions that lead to the different modes of operation.

Table 3. Device Functional Mode Comparison

OPERATING MODE PARAMETER
VIN VEN IOUT TJ
Normal mode |VINx| > |VOUT(nom)| + |VDOx| and
|VINx| > |VINx(min)|
VEN > VIH |IOUTx| < |ILIMx| T J < 125°C
Dropout mode |VINx(min)| < |VINx| < |VOUTx(nom)| + |VDOx| VEN > VIH — TJ < 125°C
Disabled mode
(any true condition disables the device)
— VEN < VIL — TJ > TSD

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

Successfully implementing an LDO in an application depends on the application requirements. This section discusses key device features and how to best implement the LDO to achieve a reliable design.

8.1.1 Setting the Output Voltages on Adjustable Devices

Figure 65 shows that each LDO resistor feedback network sets its output voltage. The positive LDO output voltage range is VNR/SS to 30 V and the negative LDO output voltage range is 0 V to –30 V.

TPS7A39 Front_Page_B.gif Figure 65. Adjustable Operation

Equation 1 relates the values of R1P and R2P to VOUTP(NOM) and VNR/SS to set the positive output voltage. Equation 2 relates the values of R1N and R2N to VOUTN(NOM) and VNR/SS to set the negative output voltage.

The positive LDO is configured as a noninverting op amp, whereas the negative LDO is an inverting op amp.

Equation 1. VOUTP = VNR/SS × (1 + R1P / R2P)
Equation 2. VOUTN = VNR/SS × (–R1N / R2N)

Substituting VNR/SS with VFBP on the positive channel and VNR/SS with VBUF on the negative channel gives a more accurate relationship.

Equation 3 and Equation 2 are rearranged versions of Equation 1 and Equation 2, with the above substitutions made.

Equation 3. R1P = (VOUTP / VFBP – 1) × R2P
Equation 4. R1N = –(VOUTN × R2P) / VBUF

The minimum bias current through both feedback networks is 5 µA to ensure accuracy.

For even tighter accuracy, take into account the input bias current into the error amplifiers (IFBP and IFBN) and use 0.1% resistors. Overriding the internal reference with a high accuracy external reference can also improve the accuracy of the device.

Table 4 and Table 5 show the resistor combinations for several common output voltages using commercially available, 1% tolerance resistors.

Table 4. Recommended Feedback-Resistor Values for the Positive LDO

TARGETED OUTPUT VOLTAGE (V) FEEDBACK RESISTOR VALUES(1) CALCULATED OUTPUT VOLTAGE (V)
R1P (kΩ) R2P (kΩ)
1.5 2.67 10.0 1.50
1.8 5.23 10.0 1.80
2.5 11.0 10.0 2.49
3.0 15.4 10.0 3.00
3.3 17.8 10.0 3.29
5.0 32.4 10.0 5.02
9.0 66.5 10.0 9.07
12.0 90.9 10.0 12.0
15.0 115 10.0 14.8
24.0 191 10.0 23.8
30.0 243 10.0 29.8
(1) R1P is connected from OUTP to FBP, R2P is connected from FBP to GND; see the Setting the Output Voltages on Adjustable Devices section.

Table 5. Recommended Feedback-Resistor Values for the Negative LDO

TARGETED OUTPUT VOLTAGE (V) FEEDBACK RESISTOR VALUES(1) CALCULATED OUTPUT VOLTAGE (V)
R1N (kΩ) R2N (kΩ)
-0.3 2.55 10.0 -0.303
-1.5 12.7 10.0 -1.51
-1.8 15.0 10.0 -1.78
-2.5 21.0 10.0 -2.49
-3.0 25.5 10.0 -3.03
-3.3 28.0 10.0 -3.33
-5.0 42.2 10.0 -5.04
-9.0 75.0 10.0 -8.91
-12.0 100 10.0 -11.9
-15.0 127 10.0 -15.1
-24.0 200 10.0 -23.8
-30.0 255 10.0 -30.3
(1) R1N is connected from OUTN to FBN, R2N is connected from FBN to BUF; see the Setting the Output Voltages on Adjustable Devices section.

8.1.2 Capacitor Recommendations

The device is designed to be stable using low equivalent series resistance (ESR) ceramic capacitors at the input and output pins. The device is also designed to be stable with aluminum polymer and tantalum polymer capacitors with ESR < 75 mΩ.

Electrolytic capacitors (along with higher ESR polymer capacitors) can also be used if capacitors (meeting the minimum capacitance and ESR requirements ) are used in parallel.

Take the effective ESR for stability when the impedance of the capacitor is at its minimum. At the minimum level, the capacitance and parasitic inductance cancel each other and provides the DC ESR.

Ceramic capacitors that employ X7R-, X5R-, and COG-rated dielectric materials provide relatively good capacitive stability across temperature, whereas the use of Y5V-rated capacitors is discouraged because of large variations in capacitance.

Regardless of the ceramic capacitor type selected, ceramic capacitance varies with operating voltage and temperature. As a rule of thumb, derate ceramic capacitors by at least 50%. The input and output capacitors recommended herein account for an effective capacitance derating of approximately 50%, but at higher VIN and VOUT conditions (that is, VIN = 5.5 V to VOUT = 5.0 V) the derating can be greater than 50% and must be taken into consideration.

For high performance applications polymer capacitors are ideal as they do not experience the large deratings of ceramic capacitors.

8.1.3 Input and Output Capacitor (CINx and COUTx)

The device is designed and characterized for operation with ceramic capacitors of 10 µF or greater (2.2 µF or greater of effective capacitance) at each input and output.

Locate the input and output capacitors as near as practical to the respective input and output pins to minimize the trace inductance from the capacitor to the device. If the LDO is used to produce low output voltages (below 5 V), a 4.7-µF output capacitor can be used. If a 4.7-µF output capacitor is used, be sure to account for the derating of the capacitors during design.

Large, fast line transients on the input supplies can cause the device output to momentarily turn off. Typically these transients do not occur in most applications, but when these transients do occur use a larger input capacitor to slow down the line transient. If the system has input line transients that are faster than 0.5 V/µs, increase the input capacitance.

8.1.4 Feed-Forward Capacitor (CFFx)

Although a feed-forward capacitor (CFFx) from the FBx pin to the OUTx pin is not required to achieve stability, a 10-nF external CFFx capacitor optimizes the transient, noise, and PSRR performance. The maximum recommended value for CFFx is 100 nF.

A larger CFFx can dominate the start-up time set by CNR/SS, for more information see the Pros and Cons of Using a Feed-Forward Capacitor with a Low Dropout Regulator application report.

8.1.5 Noise-Reduction and Soft-Start Capacitor (CNR/SS)

Although a noise-reduction and soft-start capacitor (CNR/SS) from the NR/SS pin to GND is not required, CNR/SS is highly recommended to control the start-up time and reduce the noise-floor of the device. For start-up tracking to function correctly, a minimum 4.7-nF capacitor is required. As the time constant formed by the feedback resistors and feed-forward capacitors increases, the value of the CNR/SS capacitor must also be increased for startup tracking to work correctly. To figure out how to calculate the time constant of the feedback network see the Pros and Cons of Using a Feed-Forward Capacitor with a Low Dropout Regulator application report.

8.1.6 Buffered Reference Voltage

The voltage at the NR/SS pin, whether driven internally or externally, is buffered with a high-bandwidth, low-noise op amp. The BUF pin can be used as a voltage reference in many signal chain applications.

8.1.7 Overriding Internal Reference

The internal reference of the LDO can be overridden using an external source to increase the accuracy of the LDO and lower the output noise. To override the internal reference connect the external source to the NR/SS pin of the LDO. In order to overdrive the internal reference the external source must be able to source or sink 100 µA or greater.

The internal reference achieves a 2% accuracy from –40°C to +125°C; using an external reference can help achieve better accuracy over temperature.

8.1.8 Start-Up

8.1.8.1 Soft-Start Control (NR/SS)

Each output of the device features a user-adjustable, monotonic, voltage-controlled soft-start that is set with an external capacitor (CNR/SS). This soft-start eliminates power-up initialization problems.

The output voltage (VOUTx) rises proportionally to VNR/SS during start-up. As such, the time required for VNR/SS to reach its nominal value determines the rise time of VOUTx (start-up time).

The soft-start ramp time depends on the soft-start charging current (INR/SS), the soft-start capacitance (CNR/SS), and the internal reference (VNR/SS). Equation 5 calculates the approximate soft-start ramp time (tSS):

Equation 5. tSS = RNR/SS × CNR/SS × ln [(VNR/SS + INR/SS × RNR/SS) / (INR/SS×RNR/SS)]

Values for the soft-start charging currents, RNR/SS, and the device internal CNR/SS are provided in the table.

8.1.8.1.1 In-Rush Current

In-rush current is defined as the current into the LDO at the INx pin during start-up. In-rush current then consists primarily of the sum of load current and the current used to charge the output capacitor. This current is difficult to measure because the input capacitor must be removed, which is not recommended. However, the in-rush current can be estimated by Equation 6:

Equation 6. TPS7A39 q_iout-t_sbvs281.gif

where

  • VOUTx(t) is the instantaneous output voltage of the turn-on ramp
  • dVOUTx(t) / dt is the slope of the VOUTx ramp
  • RLOAD is the resistive load impedance

8.1.8.2 Undervoltage Lockout (UVLOx) Control

The UVLOx circuit ensures that the device stays disabled before its input or bias supplies reach the minimum operational voltage range, and ensures that the device properly shuts down when the input supply collapses.

Figure 66 and Table 6 explain the UVLOx circuit response to various input voltage events, assuming VEN ≥ VIH(EN).

The positive and negative UVLO circuits are internally ANDed together. As such, if either supply collapses, both outputs turn-off and VNR/SS is pulled low internally.

TPS7A39 ai_uvlo_operation_sbvs281.gif Figure 66. Typical UVLOx Operation

Table 6. Typical UVLOx Operation Description

REGION EVENT VOUTx STATUS COMMENT
A Turn-on, |VINx| ≤ |VUVLOx| 0 Start-up
B Regulation 1 Regulates to target VOUTx
C Brownout,|VINx| ≥ |VUVLOx – VHYSx| 1 The output can fall out of regulation but the device is still enabled
D Regulation 1 Regulates to target VOUTx
E Brownout, |VINx| < |VUVLOx – VHYSx| 0 The device is disabled and the output falls because of the load and active discharge circuit. The device is reenabled when the UVLOx rising threshold is reached by the input voltage and a normal start-up then follows.
F Regulation 1 Regulates to target VOUTx
G Turn-off, |VINx| < |VUVLOx – VHYSx| 0 The output falls because of the load and active discharge circuit

Similar to many other LDOs with this feature, the UVLOx circuit takes a few microseconds to fully assert. During this time, a downward line transient below approximately 0.8 V causes the UVLOx to assert for a short time; however, the UVLOx circuit does not have enough stored energy to fully discharge the internal circuits inside of the device. When the UVLOx circuit is not given enough time to fully discharge the internal nodes, the outputs are not fully disabled.

The effect of the downward line transient can be mitigated by using a larger input capacitor to increase the fall time of the input supply when operating near the minimum VINx.

8.1.9 AC and Transient Performance

LDO ac performance for a dual-channel device includes power-supply rejection ratio, channel-to-channel output isolation, output current transient response, and output noise. These metrics are primarily a function of open-loop gain, bandwidth, and phase margin that control the closed-loop input and output impedance of the LDO. The output noise is primarily a result of the band-gap reference and error amplifier noise.

8.1.9.1 Power-Supply Rejection Ratio (PSRR)

PSRR is a measure of how well the LDO control-loop rejects signals from VINx to VOUTx across the frequency spectrum (usually 10 Hz to 10 MHz). Equation 7 gives the PSRR calculation as a function of frequency for the input signal [VINx(f)] and output signal [VOUTx(f)].

Equation 7. TPS7A39 q_psrr_sbvs248.gif

Even though PSRR is a loss in signal amplitude, PSRR is shown as positive values in decibels (dB) for convenience.

Figure 67 shows a simplified diagram of PSRR versus frequency.

TPS7A39 ai_PSRR_Diagram.gif Figure 67. Power-Supply Rejection Ratio Diagram

An LDO is often employed not only as a dc-dc regulator, but also to provide exceptionally clean power-supply voltages that exhibit ultra-low noise and ripple to sensitive system components.

8.1.9.2 Channel-to-Channel Output Isolation and Crosstalk

Output isolation is a measure of how well the device prevents voltage disturbances on one output from affecting the other output. This attenuation appears in load transient tests on the other output; however, to numerically quantify the rejection, the output channel isolation is expressed in decibels (dB).

Output isolation performance is a strong function of the PCB layout. See the Layout Guidelines section on how to best optimize the isolation performance.

8.1.9.3 Output Voltage Noise

The TPS7A39 is designed for system applications where minimizing noise on the power-supply rail is critical to system performance. For example, the TPS7A39 can be used in a phase-locked loop (PLL)-based clocking circuit that can be used for minimum phase noise, or in test and measurement systems where even small power-supply noise fluctuations reduce system dynamic range.

LDO noise is defined as the internally-generated intrinsic noise created by the semiconductor circuits alone. This noise is the sum of various types of noise (such as shot noise associated with current-through-pin junctions, thermal noise caused by thermal agitation of charge carriers, flicker noise, or 1/f noise and dominates at lower frequencies as a function of 1/f). Figure 68 shows a simplified output voltage noise density plot versus frequency.

TPS7A39 ai_Noise_Diagram.gif Figure 68. Output Voltage Noise Diagram

For further details, see the How to Measure LDO Noise white paper.

8.1.9.4 Optimizing Noise and PSRR

Table 7 describes how the ultra-low noise floor and PSRR of the device can be improved in several ways.

Table 7. Effect of Various Parameters on AC Performance(1)(2)

PARAMETER NOISE PSRR
LOW-FREQUENCY MID-FREQUENCY HIGH-FREQUENCY LOW-FREQUENCY MID-FREQUENCY HIGH-FREQUENCY
CNR/SS +++ No effect No effect +++ + No effect
CFFx ++ +++ + ++ +++ +
COUTx No effect + +++ No effect + +++
|VINx| – |VOUTx| + + + +++ +++ ++
PCB layout ++ ++ + + +++ +++
(1) The number of +s indicates the improvement in noise or PSRR performance by increasing the parameter value.
(2) Shaded cells indicate the easiest improvement to noise or PSRR performance.

The noise-reduction capacitor, in conjunction with the noise-reduction resistor, forms a low-pass filter (LPF) that filters out the noise from the reference before being gained up with the error amplifier, thereby minimizing the output voltage noise floor. The LPF is a single-pole filter and the cutoff frequency can be calculated with Equation 8. The effect of the CNR/SS capacitor increases when VOUTx(NOM) increases because the noise from the reference is gained up when the output voltage increases. For low-noise applications, a 10-nF to 1-µF CNR/SS is recommended.

Equation 8. fcutoff = 1 / (2 × π × RNR/SS × CNR/SS)

The feed-forward capacitor reduces output voltage noise by filtering out the mid-band frequency noise. The feed-forward capacitor can be optimized by placing a pole-zero pair near the edge of the loop bandwidth and pushing out the loop bandwidth, thus improving mid-band PSRR.

A larger COUTx or multiple output capacitors reduces high-frequency output voltage noise and PSRR by reducing the high-frequency output impedance of the power supply.

Additionally, a higher input voltage improves the noise and PSRR because greater headroom is provided for the internal circuits. However, a high power dissipation across the die increases the output noise because of the increase in junction temperature.

Good PCB layout improves the PSRR and noise performance by providing heatsinking at low frequencies and isolating VOUTx at high frequencies.

8.1.9.5 Load Transient Response

The load-step transient response is the output voltage response by the LDO to a step in load current, whereby output voltage regulation is maintained. There are two key transitions during a load transient response: the transition from a light to a heavy load and the transition from a heavy to a light load. The regions illustrated in Figure 69 are broken down in this section and are described in Table 8. Regions A, E, and H are where the output voltage is in steady-state. Increasing the output capacitance improves the transient response (less dip); however, the transient takes longer to recover when using a large output capacitor.

TPS7A39 ai_load_trans_region_sbvs281.gif Figure 69. Load Transient Waveform

Table 8. Load Transient Waveform Description

REGION DESCRIPTION COMMENT
A Regulation Regulation
B Output current ramping Initial voltage dip is a result of the depletion of the output capacitor charge.
C LDO responding to transient Recovery from the dip results from the LDO increasing its sourcing current, and leads to output voltage regulation.
D Reaching thermal equilibrium At high load currents the LDO takes some time to heat up. During this time the output voltage changes slightly.
E Regulation Regulation
F Output current ramping Initial voltage rise results from the LDO sourcing a large current, and leads to the output capacitor charge to increase.
G LDO responding to transient Recovery from the rise results from the LDO decreasing its sourcing current in combination with the load discharging the output capacitor.
H Regulation Regulation

8.1.10 DC Performance

8.1.10.1 Output Voltage Accuracy (VOUTx)

The device features an output voltage accuracy that includes the errors introduced by the internal reference, load regulation, line regulation, process variation, and operating temperature as specified by the table. Output voltage accuracy specifies minimum and maximum output voltage error, relative to the expected nominal output voltage stated as a percent (for very low output voltages this specification is in mV).

8.1.10.2 Dropout Voltage (VDO)

Generally speaking, the dropout voltage often refers to the minimum voltage difference between the input and output voltage (|VDO| = |VINx| – |VOUTx|) that is required for regulation. When VINx drops below the required VDOx for the given load current, the device functions as a resistive switch and does not regulate output voltage. Dropout voltage is proportional to the output current because the device is operating as a resistive switch.

8.1.11 Reverse Current

As with most LDOs, this device can be damaged by excessive reverse current.

Reverse current is current that flows through the substrate of the device instead of the normal conducting channel of the pass element. This current flow, at high enough magnitudes, degrades long-term reliability of the device resulting from risks of electromigration and excess heat being dissipated across the device.

Conditions where excessive reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUTP > VINP + 0.3 V and VOUTN < VINN – 0.3 V:

  • If the device has a large COUTx and the input supply collapses quickly with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply
If excessive reverse current flow is expected in the application, then external protection must be used to protect the device. Figure 70 shows one approach of protecting the device.

TPS7A39 ai_reverse_current_solution.gif Figure 70. Example Circuit for Reverse Current Protection Using a Schottky Diode On Positive Rail

8.1.12 Power Dissipation (PD)

Circuit reliability demands that proper consideration is given to device power dissipation, location of the circuit on the printed circuit board (PCB), and correct sizing of the thermal plane. The PCB area around the regulator must be as free as possible of other heat-generating devices that cause added thermal stresses.

As a first-order approximation, power dissipation in the regulator depends on the input-to-output voltage difference and load conditions. Use Equation 9 to approximate PD:

Equation 9. PD = (VINP – VOUTP) × IOUTP + (|VINN – VOUTN|) × |IOUTN|

Careful selection of the system voltage rails minimizes power dissipation and improves system efficiency. Proper selection allows the minimum input-to-output voltage differential to be obtained. The low dropout of the device allows for maximum efficiency across a wide range of output voltages.

The main heat conduction path for the device is through the thermal pad on the package. As such, the thermal pad must be soldered to a copper pad area under the device. This pad area contains an array of plated vias that conduct heat to any inner plane areas or to a bottom-side copper plane.

The maximum power dissipation determines the maximum allowable junction temperature (TJ) for the device. According to Equation 10, power dissipation and junction temperature are most often related by the junction-to-ambient thermal resistance (θJA) of the combined PCB, device package, and the temperature of the ambient air (TA).

Equation 10. TJ = TA + θJA × PD

Unfortunately, this thermal resistance (θJA) is highly dependent on the heat-spreading capability built into the particular PCB design, and therefore varies according to the total copper area, copper weight, and location of the planes. The θJA recorded in the Electrical Characteristics table is determined by the JEDEC standard, PCB, and copper-spreading area, and is only used as a relative measure of package thermal performance. For a well-designed thermal layout, θJA is actually the sum of the WSON package junction-to-case (bottom) thermal resistance (θJCbot) plus the thermal resistance contribution by the PCB copper.

8.1.12.1 Estimating Junction Temperature

The JEDEC standard recommends the use of psi (Ψ) thermal metrics to estimate the junction temperatures of the LDO when in-circuit on a typical PCB board application. These metrics are not strictly speaking thermal resistances, but rather offer practical and relative means of estimating junction temperatures. These psi metrics are determined to be significantly independent of the copper-spreading area. The key thermal metrics (ΨJT and ΨJB) are given in the Electrical Characteristics table and are used in accordance with Equation 11.

Equation 11. TPS7A39 q_wjt-wjb_bvs204.gif

where

  • PD is the power dissipated as explained in Equation 9
  • TT is the temperature at the center-top of the device package
  • TB is the PCB surface temperature measured 1 mm from the device package and centered on the package edge

8.2 Typical Applications

8.2.1 Design 1: Single-Ended to Differential Isolated Supply

TPS7A39 ai_IsolatedSupply_Schematic.gif Figure 71. Single-Ended to Differential Isolated Supply Schematic

8.2.1.1 Design Requirements

Table 9. Design Requirements

PARAMETER DESIGN REQUIREMENT DESIGN RESULT
Input supply Must operate off of 5-V input 5-V input supply
Output supply Must have a 5-V and –5-V output ±5-V output, ±2% accuracy
Positive output current Capable of sourcing 50 mA on positive output 50 mA (sourcing)
Negative output current Capable of sinking 50 mA on negative output 50 mA (sinking)
Isolation from 5-V supply Must be isolated from input supply Isolated through center tapped transformer
Efficiency Must have > 80% efficiency at 100 mA(1) 85% efficiency when IOUTN = –50 mA and IOUTP = 50 mA
(1) |IOUTN| = IOUTP = 50 mA.

8.2.1.2 Detailed Design Procedure

8.2.1.2.1 Switcher Choice

This design incorporates a push-pull driver for center-tapped transformers that takes a single-ended supply and converts the supply to an isolated split rail design. The SN6505B provides a simple small-form factor isolated supply. The input voltage of the SN6505B can vary from 2.25 V to 5 V, which allows for use with a wide range of input supplies. The output voltage can be adjusted through the turns ratio of the transformer. Based on the choice of the transformer this design can be used to create output voltages from ±3.3 V to ±15 V. In this design the SN6505B was paired with the 750315371 center-tapped transformer from Wurth Electronics™. This transformer has a turns ratio of 1:1.1 and an isolation rating of 2500 VRMS (the total system isolation was never tested).

8.2.1.2.2 Full Bridge Rectifier With Center-Tapped Transformer

To create the isolated supply, the SN6505B uses a center-tapped transformer. A full bridge rectifier and capacitors are required to regulate the signal before reaching the LDO because of the alternating nature of the input signal. TI recommends having a fast switching and low forward voltage diode to improve efficiency because of how fast the SN6505 switches; Schottky diodes work well. Figure 73 shows the switching nodes of the SN6505 D1 and D2 and also shows where the transformer connects to the full bridge rectifier TP1 and TP2. Figure 73 shows the switching waveforms across the rectifier diodes.

TPS7A39 bridge1_rect_llsea0.gif Figure 72. Bridge Rectifier With Center-Tapped Secondary Enables Bipolar Outputs

8.2.1.2.3 Total Solution Efficiency

Equation 12 shows how the efficiency of the system can be measured by taking the output power and dividing by the input power. IOUTP = |IOUTN| = IOUT / 2 because this system has two output rails to simplify the efficiency measurement. When the necessary parameters are measured, and by using Equation 12, the overall system efficiency can be plotted as in Figure 74. Figure 74 shows the overall system efficiency for this design, at the maximum output current of 100 mA (IOUTP = 50 mA, IOUTN = –50 mA) the efficiency of the system is 85%.

Equation 12. η = (IOUTP × VOUTP + IOUTN × VOUTN) / (IIN × VIN)

8.2.1.2.4 Feedback Resistor Selection

Equation 13 and Equation 14 calculate the values of the feedback resistors.

Equation 13. VOUTP = VFBP × (1 + R1P / R2P)
Equation 14. VOUTN = VBUF × (–R1N / R2N)

For this design the recommended 10-kΩ resistors are used for R2P and R2N. R1P and R1N can be calculated by substituting R2P and R2N into Equation 15 and Equation 16 because R2P and R2N are already selected

Equation 15. R1P = [(VOUTP / VFBP) – 1] × R2P = [(5 V / 1.188 V) – 1] × 10 kΩ = 32.2 kΩ
Equation 16. R1N = –VOUTN × R2N / VBUF = –(–5 V) × 10 kΩ / 1.19 V = 42 kΩ

After solving for Equation 15 and Equation 16, the closest one percent resistors are selected, R1N = 42.2 kΩ and R1P = 32.4 kΩ.

8.2.1.3 Application Curves

TPS7A39 SwitchingNodeSN6505.gif
Figure 73. Switching Node of the SN6505B
TPS7A39 ai_iso_supply_startup_curve.gif
Figure 75. System Startup
TPS7A39 ai_Noise_Iout_50mA_NegReg.gif
Figure 77. OUTN Noise
TPS7A39 ai_total_system_efficiency.gif
IOUT = IOUTP + |IOUTN|, IOUTP = |IOUTN|
Figure 74. Efficiency vs Output Current
TPS7A39 ai_Noise_Iout_50mA_PosReg.gif
Figure 76. OUTP Noise

8.2.2 Design 2: Getting the Full Range of a SAR ADC

TPS7A39 ai_Differential-Input.gif Figure 78. Creating Power Rails for an Analog Front-End of an ADC

8.2.2.1 Design Requirements

A common problem in analog-to-digital converters (ADCs) is that as the input signal approaches the edge of the range of the ADC, the signal begins to become distorted. Often times this is not because of a limitation of the ADC, but is a result of the analog front-end (AFE). In the AFE, the signal begins to approach the rails of the op amp and the signal begins to lose linearity and becomes distorted. This distortion is because when the rail-to-rail op amp begins to enter the nonlinear region of operation within 100 mV of the rail, the signal-to-noise ratio (SNR) starts to degrade and the total harmonic distortion (THD) of the ADC increases. To prevent the op amp from exiting the linear region of operation, the design must use a power supply that can generate rails 200 mV above and below the input range of the ADC.

8.2.2.2 Detailed Design Procedure

In this design, the ADS8900B is used as the ADC. This ADC features a differential input, so from a 5-V reference the ADC is able to encode values between ±5 V. In many applications, single-supply op amps are powered with rails from 0 V to 5 V, which causes the input signal to become distorted when the full range signal is applied. The FFT of a 10-VPP (peak-to-peak) sine wave using a single 5-V rail to bias the amplifiers is illustrated in Figure 79. In this test the SNR was calculated to be 54.89 dB and the THD was calculated to be –40.68 dB.

There is a simple solution to improve the SNR and THD of the ADC: bias the amplifiers in the analog front end with a 5.2-V rail and a –0.2-V rail. Using these rails allows the amplifier to operate in the linear region in the 0-V to 5-V range needed by the ADC. The FFT of a 10-VPP sine wave using a 5.2-V rail and a –0.2-V rail is illustrated in Figure 80. In this test the SNR was calculated to be 102.535 dB and the THD was calculated to be –121.66 dB. Using –0.2-V and 5.2-V rail voltages still allows for common 5-V (5.5 V max) op amps to be used in the design.

8.2.2.3 Detailed Design Description

8.2.2.3.1 Regulation of –0.2 V

The TPS7A39 has an innovative feature of regulating the negative rail down to zero volts. This regulation is achieved by using an inverting amplifier and using the positive-buffered reference as the input signal to the amplifier. Regulating to –0.2 V eliminates the nonlinearity and distortion present when using the full rail range of the amplifiers.

8.2.2.3.2 Feedback Resistor Selection

Use Equation 17 and Equation 18 to calculate the values of the feedback resistors:

Equation 17. VOUTP = VFBP × (1 + R1P / R2P)
Equation 18. VOUTN = VBUF × (–R1N / R2N)

For this design the recommended 10-kΩ resistors are used for R2P and R2N. R1P and R1N can be calculated by substituting R2P and R2N into Equation 19 and Equation 20 because R2P and R2N are already selected.

Equation 19. R1P = [(VOUTP / VFBP) – 1] × R2P = [(5.2 V / 1.188 V) – 1] × 10 kΩ = 33.8 kΩ
Equation 20. R1N = –VOUTN × R2N / VBUF = –(–5 V) × 10 kΩ / 1.19 V = 1.68 kΩ

After solving for Equation 19 and Equation 20, the closest one percent resistors are selected, R1N = 1.69 kΩ and R1P = 34 kΩ.

8.2.2.4 Application Curves

TPS7A39 ai_10Vpp_0V_5V_rails_ADC.gif
fIN = 1 kHz, VPP = 10.0 V
Figure 79. FFT Using 5-V and 0-V Supply Rails
TPS7A39 ai_10Vpp_n0p2V_5p2V_rails_ADC.gif
fIN = 1 kHz, VPP = 10.0 V
Figure 80. FFT Using 5.2-V and –0.2-V Supply Rails

 

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