SN65DSI83-Q1 DSI 转 LVDS 桥接器 具有 一个单通道 MIPI D-PHY 接收器前端
配置,此配置中在每个通道上具有 4 条信道,每条信道的运行速率为 1Gbps,最大输入带宽为 4Gbps。该桥接器可解码 MIPI DSI 18bpp RGB666 和 24bpp RGB888 视频流,并将格式化视频数据流转换为 LVDS 输出(像素时钟范围为 25MHz 至 154MHz),从而提供单链路 LVDS(每个链路具有 4 个数据信道)。
SN65DSI83-Q1 器件可支持高达 WUXGA 1920 × 1200(每秒 60 帧,24bpp,采用简化消隐)的分辨率。SN65DSI83-Q1 器件还适用于 使用 60fps 1366 × 768/1280 × 800(18bpp 和 24bpp)的应用。该器件实现了部分线路缓冲以适应 DSI 与 LVDS 接口间的数据流不匹配的情况。
SN65DSI83-Q1 器件采用小外形 10mm × 10mm HTQFP
(0.5mm 间距)封装,工作温度范围为 –40ºC 至 +105ºC。
器件编号 | 封装 | 封装尺寸(标称值) |
---|---|---|
SN65DSI83-Q1 | HTQFP (64) | 10.00mm x 10.00mm |
Changes from * Revision (December 2016) to A Revision
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
ADDR | 64 | I/O | Local I2C interface target address select. See Table 3. In normal operation this pin is an input. When the ADDR pin is programmed high, it must be tied to the same 1.8-V power rails where the SN65DSI83-Q1 VCC 1.8-V power rail is connected |
A_CLKP | 38 | O | LVDS channel A, LVDS clock output |
A_CLKN | 39 | ||
A_Y0P | 46 | O | LVDS channel A, LVDS data output 0 |
A_Y0N | 47 | ||
A_Y1P | 44 | O | LVDS channel A, LVDS data output 1 |
A_Y1N | 45 | ||
A_Y2P | 41 | O | LVDS channel A, LVDS data output 2 |
A_Y2N | 42 | ||
A_Y3P | 36 | O | LVDS channel A, LVDS data output 3. A_Y3P and A_Y3N must be left not connected (NC) for 18-bpp panels |
A_Y3N | 37 | ||
DA0P | 19 | I | MIPI D-PHY channel A, data lane 0; data rate up to 1 Gbps |
DA0N | 20 | ||
DA1P | 21 | I | MIPI D-PHY channel A, data lane 1; data rate up to 1 Gbps |
DA1N | 22 | ||
DA2P | 27 | I | MIPI D-PHY channel A, data lane 2; data rate up to 1 Gbps |
DA2N | 28 | ||
DA3P | 29 | I | MIPI D-PHY channel A, data lane 3; data rate up to 1 Gbps |
DA3N | 30 | ||
DACP | 24 | I | MIPI D-PHY channel A, clock lane; data rate up to 1 Gbps |
DACN | 25 | ||
EN | 2 | I | Chip enable and reset. The device is reset (shutdown) when the EN pin is low |
GND | 23, 26, 52 | G | Reference ground |
IRQ | 33 | O | Interrupt signal |
REFCLK | 17 | I | This pin is an optional external reference clock for the LVDS pixel clock. If an external reference clock is not used, this pin must be pulled to ground with an external resistor. The source of the reference clock must be placed as close as possible with a series resistor near the source to reduce EMI |
RSVD | 4 | RSVD | Reserved and leave them unconnected |
5 | |||
6 | |||
7 | |||
8 | |||
9 | |||
10 | |||
11 | |||
12 | |||
13 | |||
50 | |||
51 | |||
53 | |||
54 | |||
56 | |||
57 | |||
59 | |||
60 | |||
61 | |||
62 | |||
RSVD1 | 34 | I/O | Reserved. This pin must be left unconnected for normal operation |
RSVD2 | 1 | I | Reserved. This pin must be left unconnected for normal operation |
SCL | 15 | I | Local I2C interface clock |
SDA | 16 | I/O | Local I2C interface data |
VCC | 3 | — | 1.8-V power supply |
14 | |||
18 | |||
32 | |||
35 | |||
40 | |||
43 | |||
48 | |||
49 | |||
55 | |||
58 | |||
63 | |||
VCORE | 31 | P | 1.1-V output from the voltage regulator. This pin must have a 1-µF external capacitor to ground |
PowerPAD | — | — | Reference ground |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage | –0.3 | 2.175 | V | |
Input voltage | CMOS input pins | –0.5 | 2.175 | V | |
DSI input pins (DAxP, DAxN) | –0.4 | 1.4 | V | ||
TA | Operating free-air temperature | –40 | 105 | °C | |
TJ | Junction temperature | –40 | 115 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V | |
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VCC | VCC power supply | 1.65 | 1.8 | 1.95 | V |
VPSN | Supply noise on any VCC pin | ƒ(noise) > 1 MHz | 0.05 | V | |
V(DSI) | DSI input pin voltage | –50 | 1350 | mV | |
ƒ(I2C) | Local I2C input frequency | 400 | kHz | ||
ƒHS(CLK) | DSI high-speed (HS) clock input frequency | 40 | 500 | MHz | |
tsu | DSI HS data to clock setup time; see Figure 1 | 0.15 | UI(1) | ||
th | DSI HS data to clock hold time; see Figure 1 | 0.15 | UI(1) | ||
ZOD(LVDS) | LVDS output differential impedance | 90 | 132 | Ω | |
TC | Case temperature | 92.2 | °C |
THERMAL METRIC(1) | SN65DSI83-Q1 | UNIT | |
---|---|---|---|
PAP (HTQFP) | |||
64 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 36.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 18.2 | °C/W |
RθJB | Junction-to-board thermal resistance | 20.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 20.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.2 | °C/W |