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  • TPS22810,具有热保护的 2.7V-18V、79mΩ 导通电阻负载开关

    • ZHCSFR6C December   2016  – January 2018 TPS22810

      PRODUCTION DATA.  

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  • TPS22810,具有热保护的 2.7V-18V、79mΩ 导通电阻负载开关
  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     简化原理图
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical DC Characteristics
    8. 7.8 Typical AC Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 On and Off Control
      2. 9.3.2 Quick Output Discharge (QOD)
        1. 9.3.2.1 QOD when System Power is Removed
        2. 9.3.2.2 Internal QOD Considerations
      3. 9.3.3 EN/UVLO
      4. 9.3.4 Adjustable Rise Time (CT)
      5. 9.3.5 Thermal Shutdown
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 ON and OFF Control
    3. 10.3 Input Capacitor (Optional)
    4. 10.4 Output Capacitor (Optional)
    5. 10.5 Typical Application
      1. 10.5.1 Design Requirements
      2. 10.5.2 Detailed Design Procedure
        1. 10.5.2.1 Shutdown Sequencing During Unexpected Power Loss
        2. 10.5.2.2 VIN to VOUT Voltage Drop
        3. 10.5.2.3 Inrush Current
      3. 10.5.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 开发支持
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 接收文档更新通知
    4. 13.4 Community Resources
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息
  15. 重要声明
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DATA SHEET

TPS22810,具有热保护的 2.7V-18V、79mΩ 导通电阻负载开关

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 特性

  • 集成单通道负载开关
  • 运行环境温度范围:
    –40°C 至 +105°C
    • SOT23-6 (DBV):2A 最大持续工作电流1
    • WSON (DRV):3A 最大持续电流 1
  • 输入电压范围:2.7V 至 18V
  • 绝对最大输入电压:20V
  • 导通电阻 (RON)
    • RON = 79mΩ(VIN = 12V 时的典型值)
  • 静态电流
    • 62µA(VIN = 12V 时的典型值)
  • 关断电流
    • 500nA(VIN = 12V 时的典型值)
  • 热关断
  • 欠压闭锁 (UVLO)
  • 可调节快速输出放电 (QOD)
  • 可通过 CT 引脚配置的上升时间
  • 小外形尺寸晶体管 (SOT) 23-6 封装
    • 2.9mm × 2.8mm,0.95mm 间距,
      1.45mm 高 (DBV)
  • WSON 封装
    • 2mm × 2mm,0.65mm 间距,
      0.75mm 高 (DRV)
  • 静电放电 (ESD) 性能经测试符合 JESD 22 规范
    • ±2kV 人体模型 (HBM) 和 ±1kV 带电器件模型 (CDM)
    (1)
  • 1. 必须考虑热性能

2 应用

  • 高清电视
  • 工业系统
  • 机顶盒
  • 监控系统

3 说明

TPS22810 是一款单通道负载开关,其具有可配置的上升时间并集成有快速输出放电 (QOD) 功能。此外,该器件还 具有 热关断保护,可防止器件结温过高,借此从内部确保器件处于安全工作区域。该器件包括一个 N 通道金属氧化物半导体场效应晶体管 (MOSFET),可在 2.7V 至 18V 的输入电压范围内运行。SOT23-5 (DBV) 封装可支持 2A 的最大电流。WSON (DRV) 封装可支持 3A 的最大电流。此开关由一个开关输入控制,能够直接连接低电压控制信号。

该器件的可配置上升时间可大幅降低大容量负载电容所产生的浪涌电流,从而降低或消除电源压降。欠压闭锁用于在 VIN 电压降至阈值以下时关闭器件,以确保下游电路不会因为供电电压低于预期值而损坏。可配置的快速输出放电 (QOD) 引脚控制器件的下降时间,以便针对掉电进行灵活设计。

TPS22810 采用方便目测检查焊点的带引线 SOT-23 封装 (DBV) 以及 WSON 封装 (DRV)。该器件在自然通风环境下的额定运行温度范围为 -40˚C 至 +105˚C。删除的 IMAX 和 IPLS

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
TPS22810 SOT-23 (6) 2.90mm x 2.80mm
WSON (6) 2.00mm × 2.00mm
  1. 要了解所有可用封装,请参见数据表末尾的可订购产品附录。

简化原理图

TPS22810 SimplifiedSchematics_SLVSDH0.gif

4 修订历史记录

Changes from B Revision (May 2017) to C Revision

  • Changed Rise time can be calculated by multiplying to Rise time can be calculated by dividing in the FeatureDescription Section 9.3.4 Adjustable Rise Time (CT)Go

Changes from A Revision (December2016) to B Revision

  • 将 WSON (DRV) 的当前信息添加至特性 , 说明部分和建议运行条件表中Go
  • Added WSON (DRV) 封装Go

Changes from * Revision (December 2016) to A Revision

  • 从绝对最大额定值表中Go
  • Deleted IMAX and IPLS from the Absolute Maximum Ratings tableGo
  • Changed the Quiescent current MAX value From: 70 µA To: 80 µA in the Electrical Characteristics table Go
  • Changed the Quiescent current MAX value for VIN = 2.7 V From: 60 µA To: 70 µA in the Electrical Characteristics table Go
  • Changed the Shutdown current MAX value From: 2.25 µA To: 2.3 µA in the Electrical Characteristics tableGo

5 Device Comparison Table

DEVICE RON at 12 V Package QUICK OUTPUT
DISCHARGE
TA MAXIMUM OUTPUT
CURRENT
ENABLE
TPS22810 79 mΩ DBV Configurable 105°C 2 A Active High
TPS22810 79 mΩ DRV Configurable 105°C 3 A Active High

6 Pin Configuration and Functions

DBV Package
6-Pin SOT-23
Top View
TPS22810 DevicePinOutTopView_SLVSDH0.gif
DRV Package
6-Pin WSON
Top View
TPS22810 DevicePinOutTopView2_SLVSDH0.gif

Pin Functions

PIN I/O DESCRIPTION
NAME NO,
SOT23 WSON
CT 4 3 O Switch slew rate control. Can be left floating
EN/UVLO 3 5 I Active high switch control input and UVLO adjustment. Do not leave floating
GND 2 4 — Device ground
QOD 5 2 O Quick Output Discharge pin. This functionality can be enabled in one of three ways.
  • Placing an external resistor between VOUT and QOD
  • Tying QOD directly to VOUT and using the internal resistor value (RPD)
  • Disabling QOD by leaving pin floating
See the Quick Output Discharge (QOD) for more information
VIN 1 6 I Switch input. Place ceramic bypass capacitor(s) between this pin and GND
VOUT 6 1 O Switch output

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
VIN Input voltage –0.3 20 V
VOUT Output voltage –0.3 min(VIN + 0.3, 20) V
VEN/UVLO EN/UVLO voltage –0.3 20 V
TJ Maximum junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage 2.7 18 V
VEN/UVLO EN/UVLO voltage 0 18 V
VOUT Output voltage VIN V
IMAX Maximum continuous switch current, TA = 65°C (DBV) 2 A
Maximum continuous switch current, TA = 65°C (DRV) 3
TA Operating free-air temperature (1) –40 105 °C
CIN Input capacitor 1(2) µF
(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [TA(max)] is dependent on the maximum operating junction temperature [TJ(MAX)], the maximum power dissipation of the device in the application [PD(MAX)], and the junction-to-ambient thermal resistance of the part/package in the application (θJA), as given by the following equation: TA(MAX) = TJ(MAX) – (θJA × PD(MAX)).
(2) See the Detailed Description section.

7.4 Thermal Information

THERMAL METRIC (1) TPS22810 UNIT
DBV (SOT23) DRV (WSON)
6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 182 74.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 127.2 80.3 °C/W
RθJB Junction-to-board thermal resistance 16.9 44.3 °C/W
ψJT Junction-to-top characterization parameter 26.4 3.2 °C/W
ψJB Junction-to-board characterization parameter 36.3 44.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

 

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