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  • 具有集成反向输入极性保护的 TPS2660x 60V 2A 工业电子保险丝

    • ZHCSFF5G July   2016  – December  2019 TPS2660

      PRODUCTION DATA.  

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  • 具有集成反向输入极性保护的 TPS2660x 60V 2A 工业电子保险丝
  1. 1 特性
  2. 2 应用
    1.     简化电路原理图
  3. 3 说明
    1.     –60V 电源时的反向输入极性保护
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Undervoltage Lockout (UVLO)
      2. 9.3.2 Overvoltage Protection (OVP)
      3. 9.3.3 Reverse Input Supply Protection
      4. 9.3.4 Hot Plug-In and In-Rush Current Control
      5. 9.3.5 Overload and Short Circuit Protection
        1. 9.3.5.1 Overload Protection
          1. 9.3.5.1.1 Active Current Limiting
          2. 9.3.5.1.2 Electronic Circuit Breaker with Overload Timeout, MODE = OPEN
        2. 9.3.5.2 Short Circuit Protection
          1. 9.3.5.2.1 Start-Up With Short-Circuit On Output
        3. 9.3.5.3 FAULT Response
          1. 9.3.5.3.1 Look Ahead Overload Current Fault Indicator
        4. 9.3.5.4 Current Monitoring
        5. 9.3.5.5 IN, OUT, RTN, and GND Pins
        6. 9.3.5.6 Thermal Shutdown
        7. 9.3.5.7 Low Current Shutdown Control (SHDN)
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Step by Step Design Procedure
        2. 10.2.2.2 Programming the Current-Limit Threshold—R(ILIM) Selection
        3. 10.2.2.3 Undervoltage Lockout and Overvoltage Set Point
        4. 10.2.2.4 Programming Current Monitoring Resistor—RIMON
        5. 10.2.2.5 Setting Output Voltage Ramp Time—(tdVdT)
          1. 10.2.2.5.1 Case 1: Start-Up Without Load—Only Output Capacitance C(OUT) Draws Current During Start-Up
          2. 10.2.2.5.2 Case 2: Start-Up With Load—Output Capacitance C(OUT) and Load Draws Current During Start-Up
          3. 10.2.2.5.3 Support Component Selections—RFLTb and C(IN)
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
      1. 10.3.1 Acive ORing Operation
      2. 10.3.2 Field Supply Protection in PLC, DCS I/O Modules
      3. 10.3.3 Simple 24-V Power Supply Path Protection
    4. 10.4 Do's and Don'ts
  11. 11Power Supply Recommendations
    1. 11.1 Transient Protection
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 器件支持
    2. 13.2 文档支持
      1. 13.2.1 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息
  15. 重要声明
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DATA SHEET

具有集成反向输入极性保护的 TPS2660x 60V 2A 工业电子保险丝

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 4.2V 至 60V 工作电压，绝对最大值为 62V
  • 集成反向输入极性保护，低至 –60V
    • 无需额外组件
  • 总 RON 为 150mΩ 的集成背对背 MOSFET
  • 0.1A 至 2.23A 可调节电流限制
    （1A 时精确度为 ±5%）
  • 提供功能安全
    • 提供文档以帮助创建功能安全系统设计
  • 使用最少的外部组件在浪涌期间提供负载保护 (IEC 61000-4-5)
  • IMON 电流指示器输出（精度为 ±8.5%）
  • 低静态电流，工作时为 300µA，关断时为 20µA
  • 可调节的 UVLO、OVP 切断、输出压摆率控制
  • 反向电流阻断
  • 38V 固定过压钳位（仅限 TPS26602）
  • 采用易于使用的 16 引脚 HTSSOP 和 24 引脚 VQFN 封装
  • 可选电流限制故障响应选项（自动重试、闭锁、断路器模式）
  • 经 UL 2367 认证
    • 文件编号169910
    • RILIM ≥ 5.36kΩ（最大电流为 2.35A）
  • UL60950 - 单点故障测试期间安全
    • 开路/短路 ILIM 检测

2 应用

  • 可编程逻辑控制器
  • 分布式控制系统 (DCS)
  • 控制和自动化
  • 冗余电源 ORing
  • 工业级浪涌保护

简化电路原理图

TPS2660 typ_app_SLVDG2.gif

3 说明

TPS2660x 器件是一系列功能丰富的紧凑型高电压电子保险丝，具有一整套保护 功能）。4.2V 至 60V 的宽电源输入范围可实现对众多常用直流总线电压的控制。器件可以承受并保护由高达 ±60V 的正负电源供电的负载。集成的背靠背 FET 提供反向电流阻断功能，因此器件非常适合在电源故障和欠压条件下要求保持输出电压的系统。该器件还具备许多可调功能，可提供负载、电源和器件保护 功能 包括过流保护、输出转换率和过压保护以及欠压保护。TPS2660x 内部可靠的保护控制模块以及高耐压值有助于简化针对浪涌保护的系统设计。

借助关断引脚，可以从外部控制内部 FET 的启用/禁用，还可以将器件置于低电流关断模式。为实现系统状态监视和下游负载控制，器件提供故障和精密电流监视输出。MODE 引脚有助于在三个限流故障响应（断路器模式、闭锁模式和自动重试模式）之间灵活地对器件进行配置。

器件采用 5mm × 4.4mm、16 引脚 HTSSOP 封装和 5mm x 4mm、24 引脚 VQFN 封装；额定温度范围为 –40°C 至 +125°C。

器件信息(1)

器件型号 封装 封装尺寸（标称值）
TPS26600
TPS26602		 HTSSOP (16) 5.00mm × 4.40mm
TPS26600
TPS26601
TPS26602		 VQFN (24) 5.00mm × 4.00mm
  1. 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。

–60V 电源时的反向输入极性保护

TPS2660 scope_shot_10_slvsdg2.gif

4 修订历史记录

Changes from F Revision (August 2019) to G Revision

  • 向特性 部分添加了提供功能安全的链接Go

Changes from E Revision (November 2017) to F Revision

  • 将工作电压从 55V 更改为 60V，将绝对最大值从 60V 更改为 62V（在特性 部分）Go
  • 将说明 部分和简化原理图 中的输入范围从 55V 更改为 60VGo
  • Changed Input voltage MAX from 60 V to 62 V in the Absolute Maximum Ratings table Go
  • Changed Input voltage MAX from 55 V to 60 V in the Recommended Operating Conditions table Go
  • Changed Operating input voltage MAX from 55 V to 60 V in the Electrical Charateristics tableGo
  • Added OVPMAX to the Overvoltage Protection section in the Electrical Characteristics table Go
  • Changed voltage range from 55 V to 60 V in the Detailed Description, Application and Implementation and Power Supply Recommendations sectionsGo

Changes from D Revision (April 2017) to E Revision

  • 更新了故障响应 部分Go

Changes from C Revision (March 2017) to D Revision

  • Updated Pin Functions table Go

Changes from B Revision (Feb 2017) to C Revision

  • 更新了特性 部分中的 UL 认证Go

Changes from A Revision (Aug 2016) to B Revision

  • 添加了 RHF 封装Go
  • Changed "Reverse input supply current" from "52" to "66" in the Electrical Characteristics tableGo
  • Changed "UVLO threshold voltage, falling" from "1.095" to "1.08" in the Electrical Characteristics tableGo
  • Changed "Over-voltage threshold voltage, rising" from "1.175" to "1.17" in the Electrical Characteristics tableGo
  • Changed "Over-voltage threshold voltage, falling" from "1.095" to "1.085" in the Electrical Characteristics tableGo
  • Changed "Ilkg(OUT)" from "35" to "50" in the Electrical Characteristics tableGo
  • Changed FLT input leakage current from "–100" to "–200" (MIN) and "100" to "200" (MAX) in the Electrical Characteristics tableGo

Changes from * Revision (July 2016) to A Revision

  • 将器件状态从产品预发布 更改为生产数据Go

5 Device Comparison Table

Part Number Overvoltage Protection Over Load Fault Response with MODE = Open
TPS26600 Overvoltage cut-off, adjustable Circuit breaker with auto-retry
TPS26601 Overvoltage cut-off, adjustable Circuit breaker with latch
TPS26602 Overvoltage clamp, fixed (38 V) Circuit breaker with auto-retry

6 Pin Configuration and Functions

PWP Package
16-Pin HTSSOP
Top View
TPS2660 Pinout_01_TPS26600_SLVSDG2.gif
RHF Package
24-Pin VQFN
Top View
TPS2660 Pinout_05_TPS26600_SLVSDG2.gif

Pin Functions

PIN TYPE DESCRIPTION
NAME TPS26600/1/2
HTSSOP VQFN
dVdT 12 20 I/O A capacitor from this pin to RTN sets output voltage slew rate See the Hot Plug-In and In-Rush Current Control section
FLT 14 22 O Fault event indicator. It is an open drain output. If unused, leave floating
GND 9 17 — Connect GND to system ground
ILIM 11 19 I/O A resistor from this pin to RTN sets the overload and short-circuit current limit. See the Overload and Short Circuit Protection section
IMON 10 18 O Analog current monitor output. This pin sources a scaled down ratio of current through the internal FET. A resistor from this pin to RTN converts current to proportional voltage. If unused, leave it floating
IN 1 8 Power Power input and supply voltage of the device
2 9
MODE 6 13 I Mode selection pin for over load fault response. See the Device Functional Modes section
N.C 4 1-7 — No connect
13 11
16
21
OUT 15 23 Power Power output of the device
16 24
OVP 5 12 I Input for setting the programmable overvoltage protection threshold (For TPS26600/1 only). An overvoltage event turns off the internal FET and asserts FLT to indicate the overvoltage fault. Connect OVP pin to RTN pin externally to select the internal default threshold. For overvoltage clamp response (TPS26602 Only) connect OVP to RTN externally
PowerPadTM — — — PowerPad must be connected to RTN plane on PCB using multiple vias for enhanced thermal performance. Do not use PowerPad as the only electrical connection to RTN
RTN 8 15 — Reference for device internal control circuits
SHDN 7 14 I Shutdown pin. Pulling SHDN low makes the device to enter into low power shutdown mode. Cycling SHDN pin voltage resets the device that has latched off due to a fault condition
UVLO 3 10 I Input for setting the programmable undervoltage lockout threshold. An undervoltage event turns off the internal FET and asserts FLT to indicate the power-failure. Connect UVLO pin to RTN pin to select the internal default threshold

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (all voltages referred to GND (unless otherwise noted))(1)
MIN MAX UNIT
IN , IN-OUT Input voltage –60 62 V
IN , IN-OUT (10 ms transient), TA = 25°C –70 70 V
[IN, OUT, FLT, UVLO, SHDN] to RTN –0.3 62 V
[OVP, dVdT, ILIM, IMON, MODE] to RTN –0.3 5 V
RTN –60 0.3 V
IFLT, IdVdT, ISHDN Sink current 10 mA
IdVdT, IILIM, IIMON Source current Internally limited
TJ Operating junction temperature –40 150 °C
Transient junction temperature –65 T(TSD) °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (all voltages referred to GND (unless otherwise noted))
MIN NOM MAX UNIT
IN Input voltage –55 60 V
UVLO, OUT, FLT 0 60
OVP, dVdT, ILIM, IMON, SHDN 0 4
ILIM Resistance 5.36 120 kΩ
IMON 1
IN, OUT External capacitance 0.1 µF
dVdT 10 nF
–dV(IN)/dt V(IN) falling slew rate 20 V/µs
TJ Operating junction temperature –40 25 125 °C

7.4 Thermal Information

THERMAL METRIC(1) TPS2660 UNIT
PWP (HTSSOP) RHF (VQFN)
16 PINS 24 PINS
RθJA Junction-to-ambient thermal resistance 38.6 30.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 22.7 20.8 °C/W
RθJB Junction-to-board thermal resistance 18.2 7.6 °C/W
ψJT Junction-to-top characterization parameter 0.5 0.2 °C/W
ψJB Junction-to-board characterization parameter 18 7.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.5 1.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

–40°C ≤ TA = TJ ≤ +125°C, V(IN) = 24 V, V(SHDN) = 2 V, R(ILIM) = 120 kΩ, IMON = FLT = OPEN, C(OUT) = 1 μF, C(dVdT) = OPEN. (All voltages referenced to GND, (unless otherwise noted))
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE
V(IN) Operating input voltage 4.2 60 V
V(PORR) Internal POR threshold, rising 3.9 4 4.1 V
V(PORHys) Internal POR hysteresis 250 275 300 mV
IQ(ON) Supply current Enabled: V(SHDN) = 2 V 190 300 390 µA
IQ(OFF) V(SHDN) = 0 V 11 20 33 µA
I(VINR) Reverse input supply current V(IN) = –60 V, V(OUT) = 0 V 66 µA
V(OVC) Overvoltage clamp V(IN) > 42 V, TPS26602 only 36 37.5 40 V
UNDERVOLTAGE LOCKOUT (UVLO) INPUT
V(IN_UVLO) Factory set V(IN) undervoltage trip level V(IN) rising, V(UVLO) = 0 V 14.25 14.9 15.75 V
V(IN) falling, V(UVLO) = 0 V 13.25 13.8 14.75
V(SEL_UVLO) Internal UVLO select threshold 180 200 240 mV
V(UVLOR) UVLO threshold voltage, rising 1.175 1.19 1.225 V
V(UVLOF) UVLO threshold voltage, falling 1.08 1.1 1.125 V
I(UVLO) UVLO input leakage current 0 V ≤ V(UVLO) ≤ 60 V –100 0 100
nA
LOW IQ SHUTDOWN (SHDN) INPUT
V(SHDN) Output voltage I(SHDN) = 0.1 µA 2 2.7 3.4 V
V(SHUTF) SHDN threshold voltage for low IQ shutdown, falling 0.55 0.76 0.94 V
I(SHDN) Leakage current V(SHDN) = 0.4 V –10 µA
OVERVOLTAGE PROTECTION (OVP) INPUT
V(IN_OVP) Factory set V(IN) overvoltage trip level V(IN) rising, V(OVP) = 0 V 31 32.6 34 V
V(IN) falling, V(OVP) = 0 V 28.5 30.3 31.5
V(SEL_OVP) Internal OVP select threshold 180 200 240 mV
V(OVPR) Overvoltage threshold voltage, rising 1.17 1.19 1.225 V
V(OVPF) Overvoltage threshold, falling 1.085 1.1 1.125 V
I(OVP) OVP input leakage current 0 V ≤ V(OVP) ≤ 4 V –100 0 100 nA
OVPMAX Maximum external OVP setting TPS26600, TPS26601 only 55 V
OUTPUT RAMP CONTROL (dVdT)
I(dVdT) dVdT charging current V(dVdT) = 0 V 4 4.7 5.5 µA
R(dVdT) dVdT discharging resistance V(SHDN) = 0 V, with I(dVdT) = 10 mA sinking 14 Ω
GAIN(dVdT) dVdT to OUT gain V(OUT)/V(dVdT) 23.75 24.6 25.5 V/V
CURRENT LIMIT PROGRAMMING (ILIM)
V(ILIM) ILIM bias voltage 1 V
I(OL) Overload current limit R(ILIM) = 120 kΩ, V(IN) – V(OUT) = 1 V 0.085 0.1 0.115 A
R(ILIM) = 12 kΩ, V(IN) – V(OUT) = 1 V 0.95 1 1.05
R(ILIM) = 8 kΩ, V(IN) – V(OUT) = 1 V 1.425 1.5 1.575
R(ILIM) = 5.36 kΩ, V(IN) – V(OUT) = 1 V 2.11 2.23 2.35
I(OL_R-OPEN) R(ILIM) = OPEN, open resistor current limit (single point failure test: UL60950) 0.055
I(OL_R-SHORT) R(ILIM) = SHORT, shorted resistor current limit (single point failure test: UL60950) 0.095
I(CB) Circuit breaker detection threshold R(ILIM) = 120 kΩ, MODE = open 0.045 0.073 0.11 A
R(ILIM) = 5.36 kΩ, MODE = open 2 2.21 2.4
I(SCL) Short-circuit current limit R(ILIM) = 120 kΩ, V(IN) – V(OUT) = 5 V 0.08 0.1 0.12 A
R(ILIM) = 8 kΩ, V(IN) – V(OUT) = 5 V 1.425 1.5 1.575
R(ILIM) = 5.36 kΩ, V(IN) – V(OUT) = 5 V 2.11 2.23 2.35
I(FASTRIP) Fast-trip comparator threshold 1.87 × I(OL) + 0.015 A
CURRENT MONITOR OUTPUT (IMON)
GAIN(IMON) Gain factor I(IMON):I(OUT) 0.1 A ≤ I(OUT) ≤ 2 A 72 78.28 85 µA/A
PASS FET OUTPUT (OUT)
RON IN to OUT total ON resistance 0.1 A ≤ I(OUT) ≤ 2 A, TJ = 25°C 140 150 160 mΩ
0.1 A ≤ I(OUT) ≤ 2 A, TJ = 85°C 210
0.1 A ≤ I(OUT) ≤ 2 A, –40°C ≤ TJ ≤ +125°C 80 150 250
Ilkg(OUT) OUT leakage current in Off state V(IN) = 60 V, V(SHDN)= 0 V, V(OUT) = 0 V, sourcing 12 µA
V(IN) = 0 V, V(SHDN)= 0 V, V(OUT) = 24 V, sinking 11
V(IN) = –60 V, V(SHDN)= 0 V, V(OUT) = 0 V, sinking 50
V(REVTH) V(IN) – V(OUT) threshold for reverse protection comparator, falling –15 –10 –5 mV
V(FWDTH) V(IN) – V(OUT) threshold for reverse protection comparator, rising 85 96 110 mV
FAULT FLAG (FLT): ACTIVE LOW
R(FLT) FLT pull-down resistance V(OVP) = 2 V, I(FLT) = 5 mA sinking 40 85 160 Ω
I(FLT) FLT input leakage current 0 V ≤ V(FLT) ≤ 60 V –200 200 nA
THERMAL SHUT DOWN (TSD)
T(TSD) TSD threshold, rising 157 ºC
T(TSDhyst) TSD hysteresis 10 ºC
MODE
MODE_SEL Thermal fault mode selection MODE = 402 kΩ to RTN Current limiting with latch
MODE = Open Circuit breaker mode with auto-retry
MODE = Open (TPS26601 only) Circuit breaker mode with latch
MODE = Short to RTN Current limiting with auto-retry

7.6 Timing Requirements

–40°C ≤ TA = TJ ≤ +125°C, V(IN) = 24 V, V(SHDN) = 2 V, R(ILIM) = 120 kΩ, IMON = FLT = OPEN, C(OUT) = 1 μF, C(dVdT) = OPEN. (All voltages referenced to GND, (unless otherwise noted))
MIN NOM MAX UNIT
IN AND UVLO INPUT
UVLO_tON(dly) UVLO turnon delay UVLO↑ (100 mV above V(UVLOR)) to V(OUT) = 100 mV, C(dvdt) = open 250 µs
UVLO↑ (100 mV above V(UVLOR)) to V(OUT) = 100 mV, C(dvdt) ≥ 10 nF, [C(dvdt) in nF] 250 + 14.5 × C(dvdt) µs
UVLO_toff(dly) UVLO turnoff delay UVLO↓ (100 mV below V(UVLOF)) to FLT↓ 10 µs
SHUTDOWN CONTROL INPUT (SHDN)
tSD(dly) SHUTDOWN exit delay SHDN↑ to V(OUT) = 100 mV, C(dvdt) ≥ 10 nF, [C(dvdt) in nF] 250 + 14.5 × C(dvdt) µs
SHDN↑ to V(OUT) = 100 mV, C(dvdt) = open 250 µs
SHUTDOWN entry delay SHDN↓ (below V(SHUTF)) to FLT↓ 10 µs
OVER VOLTAGE PROTECTION INPUT (OVP)
tOVP(dly) OVP exit delay OVP↓ (20 mV below V(OVPF)) to V(OUT) = 100 mV, TPS26600 & TPS26601 only 200 µs
OVP disable delay OVP↑ (20 mV above V(OVPR)) to FLT↓, TPS26600 and TPS26601 only 6 µs
CURRENT LIMIT
tFASTTRIP(dly) Fast-trip comparator delay I(OUT) > I(FASTRIP) 250 ns
REVERSE PROTECTION COMPARATOR
tREV(dly) Reverse protection comparator delay (V(IN) – V(OUT))↓ (100 mV overdrive below V(REVTH)) to internal FET turn OFF 1.5 µs
(V(IN) – V(OUT))↓ (10 mV overdrive below V(REVTH)) to FLT↓ 45
tFWD(dly) (V(IN) – V(OUT))↑ (10 mV overdrive above V(FWDTH)) to FLT↑ 70
THERMAL SHUTDOWN
tretry Retry delay in TSD 512 ms
OUTPUT RAMP CONTROL (dVdT)
tdVdT Output ramp time SHDN↑ to V(OUT) = 23.9 V, with C(dVdT) = 47 nF 10 ms
SHDN↑ to V(OUT) = 23.9 V, with C(dVdT) = open 1.6
FAULT FLAG (FLT)
tCB(dly) FLT assertion delay in circuit breaker mode MODE = OPEN, delay from I(OUT) > I(OL) to FLT↓ 4 ms
tCBretry(dly) Retry delay in circuit breaker mode MODE = OPEN 540 ms
tPGOODF PGOOD delay (de-glitch) time Falling edge 875 µs
tPGOODR Rising edge, C(dVdT) = open 1400
Rising egde, C(dVdT) ≥ 10 nF, [C(dvdt) in nF] 875 + 20 × C(dVdT)

7.7 Typical Characteristics

–40°C ≤ TA = TJ ≤ +125°C, V(IN) = 24 V, V(SHDN)= 2 V, R(ILIM) = 120 kΩ, IMON = FLT = OPEN, C(OUT) = 1 μF, C(dVdT) = OPEN. (Unless stated otherwise)
TPS2660 D001_SLVSDG2.gif
Figure 1. On-Resistance vs Temperature Across Load Current
TPS2660 D003_SLVSDG2.gif
Figure 3. OVP Threshold Voltage vs Temperature
TPS2660 D007_SLVSDG2.gif
Figure 5. V(FWDTH) vs Temperature
TPS2660 D009_SLVSDG2.gif
Figure 7. Internal UVLO Threshold vs Temperature
TPS2660 D012_SLVSDG2.gif
Figure 9. Internal POR Threshold Voltage vs Temperature
TPS2660 D014_SLVSDG2.gif
Figure 11. Input Supply Current vs Supply Voltage During Normal Operation
TPS2660 D016_SLVSDG2.gif
V(OUT) = 0 V
Figure 13. Output Current vs Reverse Supply Voltage, – V(IN)
TPS2660 D018_SLVSDG2.gif
Figure 15. Shutdown Entry Delay vs Temperature
TPS2660 D025_SLVSDG2.gif
Figure 17. Current Monitor Output vs Output Current
TPS2660 D021_SLVSDG2.gif
Figure 19. Current Limit (% Normalized) vs Temperature
TPS2660 D004_SLVSDG2.gif
Figure 21. Over Load Current Limit vs Temperature
TPS2660 D026_SLVSDG2.gif
1.
Figure 23. Circuit Breaker Threshold Accuracy vs Circuit Breaker Threshold I(CB)
TPS2660 D022_SLVSDG2.gif
Figure 25. UVLO Turnoff Delay vs Temperature
TPS2660 scope_shot_09_slvsdg2.png
RILIM = 5.36 kΩ OVP Connected to RTN RFLTb = 100 kΩ RLOAD = 24 Ω
Figure 27. OVP Overvoltage Cut-Off Response
TPS2660 scope_shot_11_slvsdg2.png
RILIM = 5.36 kΩ RFLTb = 100 kΩ
Figure 29. Hot-Short: Fast Trip Response and Current Regulation
TPS2660 scope_shot_14_slvsdg2.png
RILIM = 5.36 kΩ RFLTb = 100 kΩ RLOAD = 24 Ω
Figure 31. Turnon Control With SHDN
TPS2660 D002_SLVSDG2.gif
Figure 2. UVLO Threshold Voltage vs Temperature
TPS2660 D006_SLVSDG2.gif
Figure 4. Reverse Voltage Threshold vs Temperature
TPS2660 D008_SLVSDG2.gif
Figure 6. Internal OVP Threshold vs Temperature
TPS2660 D010_SLVSDG2.gif
Figure 8. Overvoltage Clamp Threshold vs Temperature
TPS2660 D013_SLVSDG2.gif
Figure 10. Input Supply Current vs Supply Voltage in Shutdown
TPS2660 D015_SLVSDG2.gif
V(OUT) = 0 V
Figure 12. Input Supply Current vs Reverse Supply Voltage, – V(IN)
TPS2660 D017_SLVSDG2.gif
Figure 14. OVP Disable Delay vs Temperature
TPS2660 D019_SLVSDG2.gif
Figure 16. Shutdown Threshold Voltage Shutdown vs Temperature
TPS2660 D020_SLVSDG2.gif
Figure 18. GAIN(IMON) vs Temperature
TPS2660 D024_SLVSDG2.gif
1.
Figure 20. Current Limit (% Normalized) vs Temperature
TPS2660 D005_SLVSDG2.gif
Figure 22. Current Limit for R(ILIM) = Open and Short vs Temperature
TPS2660 D027_SLVSDG2.gif
1.
Figure 24. Current Limit Accuracy vs Current Limit, I(OL)
TPS2660 D023_SLVSDG2.gif
Taken on 2-Layer board, 2 oz.(0.08-mm thick) with HTSSOP device with RTN plane area: 1 cm2 (Top) and 4.6 cm2 (Bottom)
Figure 26. Thermal Shutdown Time vs Power Dissipation
TPS2660 scope_shot_06_slvsdg2.png
RILIM = 5.36 kΩ RFLTb = 100 kΩ RLOAD = 24 Ω
Figure 28. OV Clamp Response (TPS26602 Only)
TPS2660 scope_shot_12_slvsdg2.png
RILIM = 5.36 kΩ
Figure 30. Hot-Short: Fast Trip Response (Zoomed)
TPS2660 scope_shot_13_slvsdg2.png
RILIM = 5.36 kΩ RFLTb = 100 kΩ RLOAD = 24 Ω
Figure 32. Turnoff Control With SHDN

8 Parameter Measurement Information

TPS2660 Parametric_Diagrams.gifFigure 33. Timing Waveforms

9 Detailed Description

9.1 Overview

The TPS2660x is a family of high voltage industrial eFuses with integrated back-to-back MOSFETs and enhanced built-in protection circuitry. It provides robust protection for all systems and applications powered from 4.2 V to 60 V. The device can withstand ±60 V positive and negative supply voltages without damage. For hot-pluggable boards, the device provides hot-swap power management with in-rush current control and programmable output voltage slew rate features. Load, source and device protections are provided with many programmable features including overcurrent, overvoltage, undervoltage. The precision overcurrent limit (±5% at 1 A) helps to minimize over design of the input power supply, while the fast response short circuit protection 250 ns (typical) immediately isolates the faulty load from the input supply when a short circuit is detected.

The internal robust protection control blocks of the TPS2660x along with its ±60 V rating helps to simplify the system designs for the surge compliance ensuring complete protection of the load and the device.

The device provides precise monitoring of voltage bus for brown-out and overvoltage conditions and asserts fault signal for the downstream system. The TPS2660x monitor functions threshold accuracy of ±3% ensures tight supervision of the supply bus, eliminating the need for a separate supply voltage supervisor chip.

The device monitors V(IN) and V(OUT) to provide true reverse current blocking when a reverse condition or input power failure condition is detected. The TPS2660x is also designed to control redundant power supply systems. A pair of TPS2660x devices can be configured for Active ORing between the main power supply and the auxiliary power supply, (see the System Examples section).

Additional features of the TPS2660x include:

  • Current monitor output for health monitoring of the system
  • Electronic circuit breaker operation with overload timeout using MODE pin
  • A choice of latch off or automatic restart mode response during current limit fault using MODE pin
  • Over temperature protection to safely shutdown in the event of an overcurrent event
  • De-glitched fault reporting for brown-out and overvoltage faults
  • Look ahead overload current fault indication (see the Look Ahead Overload Current Fault Indicator section)

9.2 Functional Block Diagram

TPS2660 Functional_Block_Diagram_Updat.gif

 
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