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  • TPS22975 5.7V、6A、导通电阻为 16mΩ 的负载开关

    • ZHCSF80B May   2016  – September 2017 TPS22975

      PRODUCTION DATA.  

  • CONTENTS
  • SEARCH
  • TPS22975 5.7V、6A、导通电阻为 16mΩ 的负载开关
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics—VBIAS = 5 V
    6. 7.6 Electrical Characteristics—VBIAS = 2.5 V
    7. 7.7 Switching Characteristics
    8. 7.8 Typical DC Characteristics
    9. 7.9 Typical AC Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Adjustable Rise Time
      2. 9.3.2 Quick-Output Discharge (QOD) (Optional)
      3. 9.3.3 Thermal Shutdown
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 ON and OFF Control
      2. 10.1.2 Input Capacitor (CIN) (Optional)
      3. 10.1.3 Output Capacitor (CL) (Optional)
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Inrush Current
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Considerations
  13. 13器件和文档支持
    1. 13.1 器件支持
      1. 13.1.1 开发支持
    2. 13.2 相关文档
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Glossary
  14. 14机械、封装和可订购信息
  15. 重要声明
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DATA SHEET

TPS22975 5.7V、6A、导通电阻为 16mΩ 的负载开关

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 集成单通道负载开关
  • 输入电压范围：0.6V 至 VBIAS
  • VBIAS 电压范围：2.5V 至 5.7V
  • 导通电阻 (RON)
    • RON = 16m（VIN = 0.6V 到 5.7V，
      VBIAS = 5.7V 时的典型值）
  • 6A 最大持续开关电流
  • 低静态电流
    • 37µA（VIN = VBIAS = 5V 时的典型值）
  • 低控制输入阈值支持使用
    1.2V、1.8V、2.5V、3.3V 逻辑器件
  • 可配置的上升时间
  • 热关断
  • 快速输出放电 (QOD)（可选）
  • 带有散热焊盘的小外形尺寸无引线 (SON) 8 引脚封装
  • 经测试，静电放电 (ESD) 性能符合 JESD 22 规范
    • 2000V 人体模型 (HBM) 和 1000V 带电器件模型 (CDM)

2 应用

  • Ultrabook™
  • 笔记本电脑和上网本
  • 平板电脑
  • 消费类电子产品
  • 机顶盒和家庭网关
  • 电信系统
  • 固态硬盘 (SSD)

3 说明

TPS22975 产品系列包含两个器件：TPS22975 和 TPS22975N。每个器件都是一款单通道负载开关，可提供可配置的上升时间来尽量减小浪涌电流。此器件包括一个 N 通道金属氧化物半导体场效应晶体管 (MOSFET)，可在 0.6 V 至 5.7V 的输入电压范围内运行并可支持 6A 的最大持续电流。此开关由一个开/关输入 (ON) 控制，此输入能够直接连接低电压控制信号。TPS22975 包含一个可选 230Ω 片上负载电阻，用于在此开关关断时进行快速输出放电。

TPS22975 采用小型，节省空间的 2mm × 2mm 8 引脚 SON 封装 (DSG)，集成的散热焊盘允许该器件产生较高的功率耗散。该器件在自然通风环境下的额定运行温度范围为 –40°C 至 +105°C。

器件信息(1)

器件型号 封装 封装尺寸（标称值）
TPS22975
TPS22975N		 WSON (8) 2.00mm x 2.00mm
  1. 要了解所有可用封装，请参阅数据表末尾的可订购产品附录。


简化电路原理图

TPS22975 application_circuit_02_SLVSDD0.gif

导通电阻与输入电压间的关系

TPS22975 D007_SLVSDD0A.gif
VBIAS = 5V，IVOUT = –200mA

4 修订历史记录

Changes from A Revision (June 2016) to B Revision

  • Updated VIH in Recommended Operating ConditionsGo

Changes from * Revision (May 2016) to A Revision

  • 器件状态，从产品预览改为量产数据Go

5 Device Comparison Table

DEVICE RON AT VIN = VBIAS = 5 V (TYPICAL) QUICK-OUTPUT DISCHARGE MAXIMUM OUTPUT CURRENT ENABLE
TPS22975 16 mΩ Yes 6 A Active high
TPS22975N 16 mΩ No 6 A Active high

6 Pin Configuration and Functions

DSG Package
8-Pin (WSON)
Top View
TPS22975 pinout_top_slvsdd0.gif
DSG Package
8-Pin (WSON)
Bottom View
TPS22975 pinout_bottom_slvsdd0.gif

Pin Functions

PIN I/O DESCRIPTION
NO. NAME
1 VIN I Switch input. Input bypass capacitor recommended for minimizing VIN dip. Must be connected to Pin 1 and Pin 2. See the Application and Implementation section for more information
2
3 ON I Active high switch control input. Do not leave floating
4 VBIAS I Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 V to 5.7 V. See the Application and Implementation section for more information
5 GND — Device ground
6 CT O Switch slew rate control. Can be left floating. See the Adjustable Rise Time section under Feature Description for more information
7 VOUT O Switch output
8
— Thermal Pad — Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See the Layout Example section for layout guidelines

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN Input voltage –0.3 6 V
VOUT Output voltage –0.3 6 V
VBIAS Bias voltage –0.3 6 V
VON On voltage –0.3 6 V
IMAX Maximum continuous switch current 6 A
IPLS Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle 8 A
TJ Maximum junction temperature 125 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN MAX UNIT
VIN Input voltage 0.6 VBIAS V
VBIAS Bias voltage 2.5 5.7 V
VON ON voltage 0 5.7 V
VOUT Output voltage VIN V
VIH High-level input voltage, ON VBIAS = 2.5 V to 5 V, TA< 85°C 1.05 5.7 V
VBIAS = 2.5 V to 5 V, TA< 105°C 1.1 5.7
VBIAS = 5 V to 5.7 V, TA< 105°C 1.2 5.7
VIL Low-level input voltage, ON VBIAS = 2.5 V to 5.7 V 0 0.5 V
CIN Input capacitor 1(1) µF
TA Operating free-air temperature(1)(2) –40 105 °C
(1) See the Application Information section.
(2) In applications where high power dissipation and-or poor package thermal resistance is present, the maximum ambient temperature may have to be derated and device lifetime may be affected. Maximum ambient temperature (TA(max)) is dependent on the maximum operating junction temperature (TJ(max)), the maximum power dissipation of the device in the application (PD(max)), and the junction-to-ambient thermal resistance of the part-package in the application (θJA), and can be approximated by the following equation: TA (max) = TJ(max) – (θJA × PD(max)).

7.4 Thermal Information

THERMAL METRIC(1) TPS22975 UNIT
DSG (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 74.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 81 °C/W
RθJB Junction-to-board thermal resistance 44.7 °C/W
ψJT Junction-to-top characterization parameter 3.9 °C/W
ψJB Junction-to-board characterization parameter 45.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 16.4 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics—VBIAS = 5 V

Unless otherwise noted, the specifications in the following table applies where VBIAS = 5 V. Typical values are for TA = 25 °C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, VBIAS VBIAS quiescent current IOUT = 0 A,
VIN = VON = 5 V		 –40°C to +105°C 37 45 µA
ISD, VBIAS VBIAS shutdown current VON = VOUT = 0 V –40°C to +105°C 2.3 µA
ISD, VIN VIN off-state supply current VON = VOUT = 0 V VIN = 5 V –40°C to +85°C 0.005 5 µA
–40°C to +105°C 10
VIN = 3.3 V –40°C to +85°C 0.002 1.5
–40°C to +105°C 3.5
VIN = 1.8 V –40°C to +85°C 0.002 1
–40°C to +105°C 2
VIN = 0.6 V –40°C to +85°C 0.001 0.5
–40°C to +105°C 1
ION On-pin input leakage current VON = 5.5 V –40°C to +105°C 0.1 µA
RESISTANCE CHARACTERISTICS
RON On-resistance IOUT = –200 mA VIN = 5 V 25°C 16 19 mΩ
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 3.3 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.8 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.5 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 1.05 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VIN = 0.6 V 25°C 16 19
–40°C to +85°C 23
–40°C to +105°C 25
VON, HYS On-pin hysteresis VIN = 5 V 25°C 120 mV
RPD (1) Output pulldown resistance VIN = 5 V, VON = 0 V –40°C to +105°C 230 300 Ω
TSD Thermal shutdown Junction temperature rising 160 °C
TSD, HYS Thermal shutdown hysteresis Junction temperature falling 20 °C
(1) TPS22975 only

7.6 Electrical Characteristics—VBIAS = 2.5 V

Unless otherwise noted, the specifications in the following table applies where VBIAS = 2.5 V. Typical values are for TA = 25 °C.
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
POWER SUPPLIES AND CURRENTS
IQ, VBIAS VBIAS quiescent current IOUT = 0 mA,
VIN = VON = 2.5 V		 –40°C to +105°C 14 20 µA
ISD, VBIAS VBIAS shutdown current VON = VOUT = 0 V –40°C to +105°C 1 µA
ISD, VIN VIN off-state supply current VON = VOUT = 0 V VIN = 2.5 V –40°C to +85°C 0.005 1.3 µA
–40°C to +105°C 2.6
VIN = 1.8 V –40°C to +85°C 0.002 1
–40°C to +105°C 2
VIN = 1.05 V –40°C to +85°C 0.002 0.8
–40°C to +105°C 1.5
VIN = 0.6 V –40°C to +85°C 0.001 0.5
–40°C to +105°C 1
ION On-pin input leakage current VON = 5.5 V –40°C to +105°C 0.1 µA
RESISTANCE CHARACTERISTICS
RON On-resistance IOUT = –200 mA VIN = 2.5 V 25°C 20 26 mΩ
–40°C to +85°C 32
–40°C to +105°C 34
VIN = 1.8 V 25°C 18 23
–40°C to +85°C 29
–40°C to +105°C 31
VIN = 1.5 V 25°C 18 22
–40°C to +85°C 28
–40°C to +105°C 30
VIN = 1.2 V 25°C 17 22
–40°C to +85°C 27
–40°C to +105°C 29
VIN = 0.6 V 25°C 17 21
–40°C to +85°C 26
–40°C to +105°C 27
VON, HYS On-pin hysteresis VIN = 2.5 V 25°C 85 mV
RPD(1) Output pulldown resistance VIN = 2.5 V, VON = 0 V –40°C to +105°C 230 330 Ω
TSD Thermal shutdown Junction temperature rising 160 °C
TSD, HYS Thermal shutdown hysteresis Junction temperature falling 20 °C
(1) TPS22975 only

7.7 Switching Characteristics

PARAMETER TEST CONDITION MIN TYP MAX UNIT
VIN = VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 1450 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 1750
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 600
VIN = 0.6 V, VBIAS = 5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 620 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 280
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 485
VIN = VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2180 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2150
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 1120
VIN = 0.6 V, VBIAS = 2.5 V, TA = 25ºC (unless otherwise noted)
tON Turnon time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 1315 µs
tOFF Turnoff time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 3
tR VOUT rise time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 650
tF VOUT fall time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 2
tD ON delay time RL = 10 Ω, CL = 0.1 µF, CIN = 1 µF, CT = 1000 pF, VON = 5 V 975

7.8 Typical DC Characteristics

TPS22975 D001_SLVSDD0A.gif
VIN = VBIAS VON = 5 V VOUT = 0 V
Figure 1. VBIAS Quiescent Current vs Bias Voltage
TPS22975 D003_SLVSDD0A.gif
VIN = VBIAS VON = 0 V VOUT = 0 V
Figure 3. VBIAS Shutdown Current vs Bias Voltage
TPS22975 D005_SLVSDD0A.gif
VBIAS = 5 V IOUT = –200 mA VON = 5 V
Note: All three RON curves have the same values; therefore, only one line is visible.
Figure 5. On-Resistance vs Ambient Temperature
TPS22975 D007_SLVSDD0A.gif
VBIAS = 5 V IOUT = –200 mA VON = 5 V
Figure 7. On-Resistance vs Input Voltage
TPS22975 D009_SLVSDD0A.gif
TA = 25°C IOUT = –200 mA VON = 5 V
Figure 9. On-Resistance vs Bias Voltage
TPS22975 D002_SLVSDD0A.gif
VBIAS = 5 V VON = 5 V VOUT = 0 V
Figure 2. VBIAS Quiescent Current vs Input Voltage
TPS22975 D004_SLVSDD0A.gif
VBIAS = 5 V VON = 0 V VOUT = 0 V
Figure 4. VIN Off-State Supply Current vs Input Voltage
TPS22975 D006_SLVSDD0A.gif
VBIAS = 2.5 V IOUT = –200 mA VON = 5 V
Figure 6. On-Resistance vs Ambient Temperature
TPS22975 D008_SLVSDD0A.gif
VBIAS = 2.5 V IOUT = –200 mA VON = 5 V
Figure 8. On-Resistance vs Input Voltage
TPS22975 D010_SLVSDD0A.gif
VIN = 2.5 V VON = 0 V
Figure 10. Output Pull Down Resistance vs Bias Voltage

7.9 Typical AC Characteristics

TA = 25°C, CT = 1000 pF, CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω
TPS22975 D011_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 11. Delay Time vs Input Voltage
TPS22975 D013_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 13. Fall Time vs Input Voltage
TPS22975 D015_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 15. Turnoff Time vs Input Voltage
TPS22975 D017_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 17. Turnon Time vs Input Voltage
TPS22975 D019_SLVSDD0A.gif
VBIAS = 2.5 V
Figure 19. Rise Time vs Input Voltage
TPS22975 SC_003.gif
VIN = 0.6 V VBIAS = 2.5 V
Figure 21. Turnon Response Time
TPS22975 SC_004.gif
VIN = 2.5 V VBIAS = 2.5 V
Figure 23. Turnon Response Time
TPS22975 SC_007.gif
VIN = 0.6 V VBIAS = 2.5 V
Figure 25. Turnoff Response Time
TPS22975 SC_008.gif
VIN = 2.5 V VBIAS = 2.5 V
Figure 27. Turnoff Response Time
TPS22975 D012_SLVSDD0A.gif
VBIAS = 5 V
Figure 12. Delay Time vs Input Voltage
TPS22975 D014_SLVSDD0A.gif
VBIAS = 5 V
Figure 14. Fall Time vs Input Voltage
TPS22975 D016_SLVSDD0A.gif
VBIAS = 5 V
Figure 16. Turnoff Time vs Input Voltage
TPS22975 D018_SLVSDD0A.gif
VBIAS = 5 V
Figure 18. Turnon Time vs Input Voltage
TPS22975 D020_SLVSDD0A.gif
VBIAS = 5 V
Figure 20. Rise Time vs Input Voltage
TPS22975 SC_001.gif
VIN = 0.6 V VBIAS = 5 V
Figure 22. Turnon Response Time
TPS22975 SC_002.gif
VIN = 5 V VBIAS = 5 V
Figure 24. Turnon Response Time
TPS22975 SC_005.gif
VIN = 0.6 V VBIAS = 5 V
Figure 26. Turnoff Response Time
TPS22975 SC_006.gif
VIN = 5 V VBIAS = 5 V
Figure 28. Turnoff Response Time

8 Parameter Measurement Information

TPS22975 application_circuit_02_SLVSDD0.gif
A. Rise and fall times of the control signal are 100 ns.
B. Turnoff times and fall times are dependent on the time constant at the load. For the TPS22975, the internal pull-down resistance RPD is enabled when the switch is disabled. The time constant is (RPD || RL) × CL.
Figure 29. Test Circuit
TPS22975 time_wave_slvsco0.gif Figure 30. tON and tOFF Waveforms

 
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