ZHCSEX2C March   2016  – August 2020 TPD3S014-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics: TJ = TA = 25°C
    8. 6.8 Electrical Characteristics: –40°C ≤ TA ≤ 105°C
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
    1.     18
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Enable
      3. 8.3.3 Internal Charge Pump
      4. 8.3.4 Current Limit
      5. 8.3.5 Output Discharge
      6. 8.3.6 Input and Output Capacitance
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation With VIN < 4 V (Minimum VIN)
      2. 8.4.2 Operation With EN Control
      3. 8.4.3 Operation of Level 4 IEC 61000-4-2 ESD Protection
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Implementing Active Low Logic
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation and Junction Temperature
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 静电放电警告
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

6.8 Electrical Characteristics: –40°C ≤ TA ≤ 105°C

4.5 V ≤ VIN ≤ 5.5 V, VEN = VIN, IOUT = 0 A, typical values are at 5 V and 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
RDS(on) Input – output resistance 97 164 mΩ
ENABLE INPUT (EN)
Threshold Input rising 1 1.45 2 V
Hysteresis 0.13 V
Leakage current VEN = 0 V –1 0 1 µA
tON Turnon time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↑
See Figure 8-2		 1 1.6 2.2 ms
tOFF Turnoff time VIN = 5 V, CL = 1 µF, RL = 100 Ω, EN ↓
See Figure 8-2		 1.7 2.1 2.7 ms
tR Rise time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 8-1 0.4 0.64 0.9 ms
tF Fall time, output CL = 1 µF, RL = 100 Ω, VIN = 5 V, See Figure 8-1 0.25 0.4 0.8 ms
CURRENT LIMIT
IOS(2) Current limit, see Figure 8-3 0.65 0.85 1.05 A
tIOS Short-circuit response time(2) VIN = 5 V (see Figure 8-3)
One Half full load → RSHORT = 50 mΩ Measure from application to when current falls below 120% of final value		 2 µs
SUPPLY CURRENT
ISD Supply current, switch disabled IOUT = 0 A 0.02 10 µA
ISE Supply current, switch enabled IOUT = 0 A 66 94 µA
IREV Reverse leakage current VOUT = 5.5 V, VIN = 0 V, Measure IVOUT 0.2 20 µA
UNDERVOLTAGE LOCKOUT
VUVLO Rising threshold VIN↑ 3.5 3.77 4 V
Hysteresis VIN↓ 0.14 V
OUTPUT DISCHARGE
RPD Output pull-down resistance VIN = 4 V, VOUT = 5 V, Disabled 350 545 1200 Ω
VIN = 5 V, VOUT = 5 V, Disabled 300 456 800
THERMAL SHUTDOWN
TSHDN Rising threshold (TJ) In current limit 135 °C
Not in current limit 155
Hysteresis(3) 20 °C
ESD PROTECTION
II Input leakage current (D1, D2) VI = 3.3 V 0.02 1 µA
VD Diode forward voltage (D1, D2); Lower clamp diode IO = 8 mA 0.95 V
VBR Breakdown voltage (D1, D2) IBR = 1 mA 6 V
(1) Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2) See the Current Limit section for explanation of this parameter.
(3) These parameters are provided for reference only, and do not constitute part of TI’s published device specifications for purposes of TI’s product warranty.