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  • LM5175 42V 宽 VIN 同步 4 开关 降压 - 升压控制器

    • ZHCSDH1A October   2015  – May 2016 LM5175

      PRODUCTION DATA.  

  • CONTENTS
  • SEARCH
  • LM5175 42V 宽 VIN 同步 4 开关 降压 - 升压控制器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Fixed Frequency Valley/Peak Current Mode Control with Slope Compensation
      2. 8.3.2  VCC Regulator and Optional BIAS Input
      3. 8.3.3  Enable/UVLO
      4. 8.3.4  Soft-Start
      5. 8.3.5  Overcurrent Protection
      6. 8.3.6  Average Input/Output Current Limiting
      7. 8.3.7  CCM/DCM Operation
      8. 8.3.8  Frequency and Synchronization (RT/SYNC)
      9. 8.3.9  Frequency Dithering
      10. 8.3.10 Output Overvoltage Protection (OVP)
      11. 8.3.11 Power Good (PGOOD)
      12. 8.3.12 Gm Error Amplifier
      13. 8.3.13 Integrated Gate Drivers
      14. 8.3.14 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown, Standby, and Operating Modes
      2. 8.4.2 MODE Pin Configuration
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Frequency
        2. 9.2.2.2  VOUT
        3. 9.2.2.3  Inductor Selection
        4. 9.2.2.4  Output Capacitor
        5. 9.2.2.5  Input Capacitor
        6. 9.2.2.6  Sense Resistor (RSENSE)
        7. 9.2.2.7  Slope Compensation
        8. 9.2.2.8  UVLO
        9. 9.2.2.9  Soft-Start Capacitor
        10. 9.2.2.10 Dither Capacitor
        11. 9.2.2.11 MOSFETs QH1 and QL1
        12. 9.2.2.12 MOSFETs QH2 and QL2
        13. 9.2.2.13 Frequency Compensation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 文档支持
      1. 12.1.1 相关文档 
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息
  14. 重要声明
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DATA SHEET

LM5175 42V 宽 VIN 同步 4 开关 降压 - 升压控制器

本资源的原文使用英文撰写。 为方便起见,TI 提供了译文;由于翻译过程中可能使用了自动化工具,TI 不保证译文的准确性。 为确认准确性,请务必访问 ti.com 参考最新的英文版本(控制文档)。

1 特性

  • 单电感降压-升压控制器,用于升压/降压 DC/DC 转换
  • 宽 VIN 范围:3.5V 至 42V,最大值为 60V
  • 灵活的 VOUT 范围:0.8V 至 55V
  • VOUT 短路保护
  • 高效降压-升压转换
  • 可调开关频率
  • 可选频率同步和抖动
  • 集成 2A 金属氧化物半导体场效应晶体管 (MOSFET) 栅极驱动器
  • 逐周期电流限制和可选断续模式
  • 可选输入或输出平均电流限制
  • 可编程的输入欠压闭锁 (UVLO) 和软启动
  • 电源正常和输出过压保护
  • 可利用脉冲跳跃来选择连续导通模式 (CCM) 或断续导通模式 (DCM)
  • 采用 HTSSOP-28 和 QFN-28 封装

2 应用

  • 汽车起停系统
  • 备用电池和超级电容充电
  • 工业 PC 用电源
  • USB 供电
  • LED 照明

3 说明

LM5175 是一款同步四开关降压-升压 DC/DC 控制器,能够将输出电压稳定在输入电压、高于输入电压或者低于输入电压的某一电压值上。LM5175 具有 3.5V 至 42V 的宽输入电压范围(最大值为 60V),支持各类 应用。

LM5175 在降压和升压工作模式下均采用电流模式控制,以提供出色的负载和线路调节性能。开关频率可通过外部电阻进行编程,并且可与外部时钟信号同步。

该器件还 具有 可编程的软启动功能,并且提供 诸如 逐周期电流限制、输入欠压锁定 (UVLO)、输出过压保护 (OVP) 和热关断等各类保护特性。此外,LM5175 特有 可选择的连续导通模式 (CCM) 或断续导通模式 (DCM)、可选平均输入或输出电流限制、可降低峰值电磁干扰 (EMI) 的可选扩展频谱、以及应对持续过载情况的可选断续模式保护。

器件信息

订货编号 封装 封装尺寸
LM5175PWP HTSSOP-28 9.7mm x 4.4mm
LM5175RHF QFN-28 4.0mm x 5.0mm

4 简化电路原理图

LM5175 schematic_frontpage.gif

5 修订历史记录

Changes from * Revision (October 2015) to A Revision

  • Added QFN-28 封装Go
  • Added LM5175RHF 信息Go
  • Added RHF packageGo
  • Added QFN pins Go
  • Changed first plus to minus Go
  • Changed all 1.22 V to 1.23 V Go
  • Changed equation Go
  • Changed equation Go
  • Changed equation Go

6 Pin Configuration and Functions

HTSSOP-28
PWP Package
Top View
LM5175 po1_PWP_snvsa37.gif
QFN-28
RHF Package
Top View
LM5175 po2_RHF_snvsa37.gif

Pin Functions

PIN DESCRIPTION
NAME HTSSOP QFN
EN/UVLO 1 26 Enable pin. For EN/UVLO < 0.4 V, the LM5175 is in a low current shutdown mode. For 0.7 V < EN/UVLO < 1.23 V, the controller operates in standby mode in which the VCC regulator is enabled but the PWM controller is not switching. For EN/UVLO > 1.23 V, the PWM function is enabled, provided VCC exceeds the VCC UV threshold.
VIN 2 27 The input supply pin to the IC. Connect VIN to a supply voltage between 3.5 V and 42 V.
VISNS 3 28 VIN sense input. Connect to the input capacitor.
MODE 4 1 Mode = GND, DCM, Hiccup Disabled (Set RMODE resistor to GND = 0 Ω)
Mode = 1.00 V, DCM, Hiccup Enabled (Set RMODE resistor to GND = 49.9 kΩ)
Mode = 1.85 V, CCM, Hiccup Enabled (Set RMODE resistor to GND = 93.1 kΩ)
Mode = VCC, CCM, Hiccup Disabled (Set RMODE resistor to VCC = 0 Ω)
DITH 5 2 A capacitor connected between the DITH pin and AGND is charged and discharged with a 10 uA current source. As the voltage on the DITH pin ramps up and down the oscillator frequency is modulated between –5% and +5% of the nominal frequency set by the RT resistor. Grounding the DITH pin will disable the dithering feature. In the external Sync mode, the DITH pin voltage is ignored.
RT/SYNC 6 3 Switching frequency programming pin. An external resistor is connected to the RT/SYNC pin and AGND to set the switching frequency. This pin can also be used to synchronize the PWM controller to an external clock.
SLOPE 7 4 A capacitor connected between the SLOPE pin and AGND provides the slope compensation ramp for stable current mode operation in both buck and boost mode.
SS 8 5 Soft-start programming pin. A capacitor between the SS pin and AGND pin programs soft-start time.
COMP 9 6 Output of the error amplifier. An external RC network connected between COMP and AGND compensates the regulator feedback loop.
AGND 10 7 Analog ground of the IC.
FB 11 8 Feedback pin for output voltage regulation. Connect a resistor divider network from the output of the converter to the FB pin.
VOSNS 12 9 VOUT sense input. Connect to the output capacitor.
ISNS(–)
ISNS(+)
13
14
10
11
Input or Output Current Sense Amplifier inputs. An optional current sense resistor connected between ISNS(+) and ISNS(–) can be located either on the input side or on the output side of the converter. If the sensed voltage across the ISNS(+) and ISNS(-) pins reaches 50 mV, a slow Constant Current (CC) control loop becomes active and starts discharging the soft-start capacitor to regulated the drop across ISNS(+) and ISNS(-) to 50 mV. Short ISNS(+) and ISNS(-) together to disable this feature.
CSG 15 12 The negative or ground input to the PWM current sense amplifier. Connect directly to the low-side (ground) of the current sense resistor.
CS 16 13 The positive input to the PWM current sense amplifier.
PGOOD 17 14 Power Good open drain output. PGOOD is pulled low when FB is outside a 0.8 V ±10% regulation window.
SW2
SW1
18
28
15
25
The boost and the buck side switching nodes respectively.
HDRV2
HDRV1
19
27
16
24
Output of the high-side gate drivers. Connect directly to the gates of the high-side MOSFETs.
BOOT2
BOOT1
20
26
17
23
An external capacitor is required between the BOOT1, BOOT2 pins and the SW1, SW2 pins respectively to provide bias to the high-side MOSFET gate drivers.
LDRV2
LDRV1
21
25
18
22
Output of the low-side gate drivers. Connect directly to the gates of the low-side MOSFETs.
PGND 22 19 Power ground of the IC. The high current ground connection to the low-side gate drivers.
VCC 23 20 Output of the VCC bias regulator. Connect capacitor to ground.
BIAS 24 21 Optional input to the VCC bias regulator. Powering VCC from an external supply instead of VIN can reduce power loss at high VIN. For VBIAS > 8 V, the VCC regulator draws power from the BIAS pin. The BIAS pin voltage must not exceed 40 V.
PowerPAD™ - - The PowerPAD should be soldered to the analog ground. If possible, use thermal vias to connect to a PCB ground plane for improved power dissipation.

7 Specifications

7.1 Absolute Maximum Ratings(1)

MIN MAX UNIT
VIN, EN/UVLO, VISNS, VOSNS, ISNS(+), ISNS(–) –0.3 60 V
BIAS –0.3 40
FB, SS, DITH, RT/SYNC, SLOPE, COMP –0.3 3.6
SW1, SW2 –1 60
SW1, SW2 (20 ns transient) –3.0 65
VCC, MODE, PGOOD –0.3 8.5
LDRV1, LDRV2 –0.3 8.5
BOOT1, HDRV1 with respect to SW1 –0.3 8.5
BOOT2, HDRV2 with respect to SW2 –0.3 8.5
BOOT1, BOOT2 –0.3 68
CS, CSG –0.3 0.3
Operating junction temperature –40 150 °C
Storage temperature, Tstg -65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
VESD(1) Human body model (HBM) ESD stress voltage(2) ±2000 V
Charged device model (CDM) ESD stress voltage(3) ±750
(1) Electrostatic discharge (ESD) to measure device sensitivity and immunity to damage caused by assembly line electrostatic discharges into the device.
(2) Level listed above is the passing level per ANSI/ESDA/JEDEC JS-001. JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.
(3) Level listed above is the passing level per EIA-JEDEC JESD22-C101. JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN NOM MAX UNIT
VIN Input voltage range 3.5 42 V
BIAS Bias supply voltage range 8 36
VOUT Output voltage range 0.8 55
EN/UVLO Enable voltage range 0 42
ISNS(+), ISNS(-) Average current sense common mode range 0 55
TJ Operating temperature range(2) –40 125 °C
Fsw Operating frequency range 100 600 kHz
(1) Recommended Operating Conditions are conditions under the device is intended to be functional. For specifications and test conditions, see Electrical Characteristics .
(2) High junction temperatures degrade operating lifetimes. Operating lifetime is de-rated for junction temperatures greater than 125°C.

7.4 Thermal Information

THERMAL METRIC(1) LM5175 UNIT
HTSSOP QFN
28 PINS 28 PINS
RθJA Junction-to-ambient thermal resistance 33.1 34.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 17.7 26.6
RθJB Junction-to-board thermal resistance 14.9 6.3
ψJT Junction-to-top characterization parameter 0.4 0.3
ψJB Junction-to-board characterization parameter 14.7 6.2
RθJC(bot) Junction-to-case (bottom) thermal resistance 1.1 2.0
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Typical values correspond to TJ = 25°C. Minimum and maximum limits apply over the –40°C to 125°C junction temperature range unless otherwise stated. VIN = 24 V unless otherwise stated.(1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN)
VIN Operating input voltage 3.5 42 V
IQ VIN shutdown current VEN/UVLO = 0 V 1.4 10 µA
VIN standby current VEN/UVLO = 1.1 V, non-switching 0.7 2
VIN operating current VEN/UVLO = 2 V, VFB = 0.9 V 1.65 4 mA
VCC
VVCC(VIN) Regulation voltage VBIAS = 0 V, VCC open 6.95 7.35 7.88 V
VUV(VCC) VCC Undervoltage lockout VCC increasing 3.11 3.27 3.43
Undervoltage hysteresis 160 mV
IVCC VCC current limit VVCC = 0 V 65 mA
ROUT(VCC) VCC regulator output impedance IVCC = 30 mA, VIN = 3.5 V 9.3 16 Ω
BIAS
VBIAS(SW) BIAS switchover voltage VIN = 24 V 7.25 8 8.75 V
EN/UVLO
VEN(STBY) Standby threshold EN/UVLO rising 0.55 0.79 0.97 V
IEN(STBY) Standby source current VEN/UVLO = 1.1 V 1 2 3 µA
VEN(OP) Operating threshold EN/UVLO rising 1.17 1.23 1.29 V
ΔIHYS(OP) Operating hysteresis current VEN/UVLO = 2.4 V 1.5 3.5 5.5 µA
SS
ISS Soft-start pull up current VSS = 0 V 4.30 5.65 7.25 µA
VSS(CL) SS clamp voltage SS open 1.27 V
VFB - VSS FB to SS offset VSS = 0 V -15 mV
EA (ERROR AMPLIFIER)
VREF Feedback reference voltage FB = COMP 0.788 0.800 0.812 V
gmEA Error amplifier gm 1.27 mS
ISINK/ISOURCE COMP sink/source current VFB=VREF ± 300 mV 280 µA
ROUT Amplifier output resistance 20 MΩ
BW Unity gain bandwidth 2 MHz
IBIAS(FB) Feedback pin input bias current FB in regulation 100 nA
FREQUENCY
fSW(1) Switching Frequency 1 RT = 133 kΩ 180 200 220 kHz
fSW(2) Switching Frequency 2 RT = 47 kΩ 430 500 565
DITHER
IDITHER Dither source/sink current 10.5 µA
VDITHER Dither high threshold 1.27 V
Dither low threshold 1.16
SYNC
VSYNC Sync input high threshold 2.1 V
Sync input low threshold 1.2
PWSYNC Sync input pulse width 75 500 ns
CURRENT LIMIT
VCS(BUCK) Buck current limit threshold (Valley) VIN = VVISNS = 24 V, VVOSNS = 12 V, VSLOPE = 0 V, TJ = 25°C 53.2 76 98 mV
VCS(BOOST) Boost current limit threshold (Peak) VIN = VVISNS = 12 V, VVOSNS = 18 V, VSLOPE = 0 V, TJ = 25°C 119 170 221
IBIAS(CS/CSG) CS/CSG pin bias current VCS = VCSG = 0 V -75 µA
IOFFSET(CS/CSG) CSG pin bias current VCS = VCSG = 0 V 14
CONSTANT CURRENT LOOP
VSNS Average current loop regulation target VISNS(-) = 24 V, sweep ISNS(+), VSS = 0.8 V 43 50 57 mV
ISNS ISNS(+)/ISNS(–) pin bias currents VISNS(+) = VISNS(–) = VIN = 24 V 7 µA
Gm gm of soft-start pull down amplifier VISNS(+)–VISNS(–) = 55 mV, VSS = 0.5 V 1 mS
SLOPE
ISLOPE Buck adaptive slope current VIN = VVINSNS = 24 V, VVOSNS = 12 V, VSLOPE = 0 V 24 30 35 µA
Boost adaptive slope current VIN = VVINSNS = 12 V, VVOSNS = 18 V, VSLOPE = 0 V 13 17 21
gmSLOPE Slope compensation amplifier gm 2 µS
MODE
IMODE Source current out of MODE pin 17 20 23 µA
VDCM_HIC DCM with hiccup threshold 0.60 0.7 0.76 V
VCCM_HIC CCM with hiccup threshold 1.18 1.28 1.38
VCCM CCM no hiccup threshold 2.22 2.4 2.6
PGOOD
VPGD PGOOD trip threshold for falling FB Measured with respect to VREF –9 %
PGOOD trip threshold for rising FB Measured with respect to VREF 10 %
Hysteresis 1.6 %
ILEAK(PGD) PGOOD leakage current 100 nA
ISINK(PGD) PGOOD sink current VPGOOD = 0.4 V 2 4.2 6.5 mA
OUTPUT OVP
VOVP Output overvoltage threshold At the FB pin 0.86 V
Hysteresis 21 mV
NMOS DRIVERS
IHDRV1,2 Driver peak source current VBOOT - VSW = 7 V 1.8 A
Driver peak sink current VBOOT - VSW = 7 V 2.2
ILDRV1,2 Driver peak source current 1.8
Driver peak sink current 2.2
RHDRV1,2 Driver pull up resistance VBOOT - VSW = 7 V 1.9 Ω
Driver pull down resistance VBOOT - VSW = 7 V 1.3
VUV(BOOT1,2) BOOT1,2 to SW1,2 UVLO threshold HDRV1,2 shut off 2.73 V
BOOT1,2 to SW1,2 UVLO hysteresis HDRV1,2 start switching 280 mV
BOOT1,2 to SW1,2 threshold for refresh pulse 4.45 V
RLDRV1,2 Driver pull up resistance IDRV1,2 = 0.1 A 2 Ω
Driver pull down resistance IDRV1,2 = 0.1 A 1.5
tDT1 Dead time HDRV1,2 off to LDRV1,2 on 55 ns
tDT2 Dead time LDRV1,2 off to HDRV1,2 on 55
THERMAL SHUTDOWN
TSD Thermal shutdown temperature 165 °C
TSD(HYS) Thermal shutdown hysteresis 15
(1) All minimum and maximum limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.

7.6 Typical Characteristics

At TA = 25°C, unless otherwise stated.
LM5175 D009_SNVA37.gif
VOUT=12 V Fsw=300 kHz L1=4.7 μH
IOUT=3 A
Figure 1. Efficiency vs VIN
LM5175 D004_snva37.gif
Figure 3. Oscillator Frequency
LM5175 D006_snva37.gif
Figure 5. IIN Standby
LM5175 D010_SNVA37.gif
Figure 7. IIN Shutdown vs VIN
LM5175 D012_SNVA37.gif
Figure 9. Buck Current Limit vs Temperature
LM5175 D014_SNVA37.gif
Figure 11. VREF vs Temperature
LM5175 fccm_boost.gif
VOUT=12 V VIN=6 V
Figure 13. Forced CCM Operation (Boost)
LM5175 loadtr24vin_2a_4a.gif
VIN=24 V VOUT=12 V Load 2A to 4A
Figure 15. Load Step (Buck)
LM5175 loadtr12vin_2a_4a.gif
VIN=12 V VOUT=12 V Load 2A to 4A
Figure 17. Load Step (Buck-Boost)
LM5175 hiccup_mode.gif
VIN=24 V VOUT=12 V Hiccup Enabled
Figure 19. Hiccup Mode Current Limit
LM5175 D008_SNVA37.gif
VOUT =12 V Fsw=300 kHz L1=4.7 μH
Figure 2. Efficiency vs Load
LM5175 D002_SNVSA37.gif
Figure 4. VCC vs VIN
LM5175 D007_snva37.gif
Figure 6. IIN Operating vs VIN
LM5175 D013_SNVA37.gif
Figure 8. ENABLE/UVLO Rising Threshold vs Temperature
LM5175 D011_SNVA37.gif
Figure 10. Boost Current Limit vs Temperature
LM5175 fccm_buck.gif
VOUT=12 V VIN=24 V
Figure 12. Forced CCM Operation (Buck)
LM5175 fccm_buckboost.gif
VOUT=12 V VIN=12 V
Figure 14. Forced CCM Operation (Buck-Boost)
LM5175 loadtr6vin_2a_4a.gif
VIN=6 V VOUT=12 V Load 2A to 4A
Figure 16. Load Step (Boost)
LM5175 linetr8v_24v_1a.gif
VIN=8 V to 24 V VOUT=12 V IOUT=1A
Figure 18. Line Transient

8 Detailed Description

8.1 Overview

The LM5175 is a wide input voltage four-switch buck-boost controller IC with integrated drivers for N-channel MOSFETs. It operates in the buck mode when VIN is greater than VOUT and in the boost mode when VIN is less than VOUT. When VIN is close to VOUT, the device operates in a proprietary transition buck or boost mode. The control scheme provides smooth operation for any input/output combination within the specified operating range. The buck or boost transition control scheme provides a low ripple output voltage when VIN equals VOUT without compromising the efficiency.

The LM5175 integrates four N-Channel MOSFET drivers including two low-side drivers and two high-side drivers, eliminating the need for external drivers or floating bias supplies. The internal VCC regulator supplies internal bias rails as well as the MOSFET gate drivers. The VCC regulator is powered either from the input voltage through the VIN pin or from the output or an external supply through the BIAS pin for improved efficiency.

The PWM control scheme is based on valley current mode control for buck operation and peak current mode control for boost operation. The inductor current is sensed through a single sense resistor in series with the low-side MOSFETs. The sensed current is also monitored for cycle-by-cycle current limit. The behavior of the LM5175 during an overload condition is dependent on the MODE pin programming (see MODE Pin Configuration). If hiccup mode fault protection is selected, the controller turns off after a fixed number of switching cycles in cycle-by-cycle current limit and restarts after another fixed number of clock cycles. The hiccup mode reduces the heating in the power components in a sustained overload condition. If hiccup mode is disabled through the MODE pin, the controller remains in a cycle-by-cycle current limit condition until the overload is removed. The MODE pin also selects continuous conduction mode (CCM) for noise sensitive applications or discontinuous conduction mode (DCM) for higher light load efficiency.

In addition to the cycle-by-cycle current limiting, the LM5175 also provides an optional average current regulation loop that can be configured for either input or output current limiting. This is useful for battery charging or other applications where a constant current behavior may be required.

The soft-start time of LM5175 is programmed by a capacitor connected to the SS pin to minimize the inrush current and overshoot during startup.

The precision EN/UVLO pin supports programmable input undervoltage lockout (UVLO) with hysteresis. The output overvoltage protection (OVP) feature turns off the high-side drivers when the voltage at the FB pin is 7.5% above the nominal 0.8-V VREF. The PGOOD output indicates when the FB voltage is inside a ±10% regulation window centered at VREF.

8.2 Functional Block Diagram

LM5175 bd_functional_snvsa37.gif

8.3 Feature Description

8.3.1 Fixed Frequency Valley/Peak Current Mode Control with Slope Compensation

The LM5175 implements a fixed frequency current mode control of both the buck and boost switches. The output voltage, scaled down by the feedback resistor divider, appears at the FB pin and is compared to the internal reference (VREF) by an internal error amplifier. The error amplifier produces an error voltage by driving the COMP pin. An adaptive slope compensation signal based on VIN, VOUT, and the capacitor at the SLOPE pin is added to the current sense signal measured across the CS and CSG pins. The result is compared to the COMP error voltage by the PWM comparator.

The LM5175 regulates the output using valley current mode control in buck mode and peak current mode control in boost mode. For valley current mode control, the high-side buck MOSFET controlled by HDRV1 is turned on by the PWM comparator at the valley of the inductor ripple current and turned off by the oscillator clock signal. Valley current mode control is advantageous for buck converters where the PWM controller must resolve very short on-times. For peak current mode control in the boost mode, the low-side boost MOSFET controlled by LDRV2 is turned on by the clock signal in each switching cycle and turned off by the PWM comparator at the peak of the inductor ripple current.

The low-side gate drive LDRV1, complementary to the HDRV1 drive signal, controls the synchronous rectification MOSFET of the buck stage. The high-side gate drive HDRV2, complementary to the low-side gate drive LDRV2, controls the high-side synchronous rectifier of the boost stage. For operation with VIN close to VOUT, the LM5175 uses a proprietary buck or boost transition scheme to achieve smooth, low ripple transition zone behavior.

Peak and valley current mode controllers require slope compensation for stable current loop operation at duty cycle greater than 50% in peak current mode control and less than 50% in valley current mode control. The LM5175 provides a SLOPE pin to program optimum slope for any VIN and VOUT combination using an external capacitor.

8.3.2 VCC Regulator and Optional BIAS Input

The VCC regulator provides a regulated 7.5-V bias supply to the gate drivers. When EN/UVLO is above the 0.7-V (typical) standby threshold, the VCC regulator is turned on. For VIN less than 7.5 V, the VCC voltage tracks VIN with a small voltage drop as shown in Figure 4. If the EN/UVLO input is above the 1.23 V operating threshold and VCC exceeds the 3.3 V (typical) VCC UV threshold, the controller is enabled and switching begins.

The VCC regulator draws power from VIN when there is no supply voltage connected to the BIAS pin. If the BIAS pin is connected to an external voltage source that exceeds VCC by one diode drop, the VCC regulator draws power from the BIAS input instead of VIN. Connecting the BIAS pin to VOUT in applications with VOUT greater than 8.5 V improves the efficiency of the regulator in the buck mode. The BIAS pin voltage should not exceed 36 V.

For low VIN operation, ensure that the VCC voltage is sufficient to fully enhance the MOSFETs. Use an external bias supply if VIN dips below the voltage required to sustain the VCC voltage. For these conditions, use a series blocking diode between the input supply and the VIN pin (Figure 20). This prevents VCC from back-feeding into VIN through the body diode of the VCC regulator.

A 1-µF capacitor to PGND is required to supply the VCC regulator load transients.

LM5175 vcc_regulator_snvsa37.gif Figure 20. VCC Regulator

8.3.3 Enable/UVLO

The LM5175 has a dual function enable and undervoltage lockout (UVLO) circuit. The EN/UVLO pin has three distinct voltage ranges: shutdown, standby, and operating (see Shutdown, Standby, and Operating Modes). When the EN/UVLO pin is below the standby threshold (0.7 V typical), the converter is held in a low power shutdown mode. When EN/UVLO voltage is greater than the standby threshold but less than the 1.23 V operating threshold, the internal bias rails and the VCC regulator are enabled but the soft-start (SS) pin is held low and the PWM controller is disabled. A 1.5 µA pull-up current is sourced out of the EN/UVLO pin in standby mode to provide hysteresis between the shutdown mode and the standby mode. When EN/UVLO is greater than the 1.23 V operating threshold, the controller commences operation if VCC is above VCC UV threshold (3.3 V). A hysteresis current of 3.5 µA is sourced into the EN/UVLO pin when the EN/UVLO input exceeds the 1.23 V operation threshold to provide hysteresis that prevents on/off chattering in the presence of noise with a slowly changing input voltage.

The VIN undervoltage lockout turn-on threshold is typically set by a resistor divider from the VIN pin to AGND with the mid-point of the divider connected to EN/UVLO. The turn-on threshold VINUV is calculated using Equation 1 where RUV2 is the upper resistor and RUV1 is the lower resistor in the EN/UVLO resistor divider:

Equation 1. LM5175 eq01_snvsa37_uvlo.gif

The hysteresis between the UVLO turn-on threshold and turn-off threshold is set by the upper resistor in the EN/UVLO resistor divider and is given by:

Equation 2. LM5175 eq02_snvsa37_uvlo_hys.gif
LM5175 en_uvlo_function.gif Figure 21. UVLO Threshold Programming

8.3.4 Soft-Start

The LM5175 soft-start time is programmed using a soft-start capacitor from the SS pin to AGND. When the converter is enabled, an internal 5-µA current source charges the soft-start capacitor. When the SS pin voltage is below the 0.8-V feedback reference voltage VREF, the soft-start pin controls the regulated FB voltage. Once SS exceeds VREF, the soft-start interval is complete and the error amplifier is referenced to VREF. The soft-start time is given by Equation 3:

Equation 3. LM5175 eq03_snvsa37_tsoftstart.gif

The soft-start capacitor is internally discharged when the converter is disabled because of EN/UVLO falling below the operation threshold or VCC falling below the VCC UV threshold. The soft-start pin is also discharged when the converter is in hiccup mode current limiting or in thermal shutdown. When average input or output current limiting is active, the soft-start capacitor is discharged by the constant current loop transconductance (gm) amplifier to limit either input or output current.

8.3.5 Overcurrent Protection

The LM5175 provides cycle-by-cycle current limit to protect against overcurrent and short circuit conditions. In buck operation, the sensed valley voltage across the CSG and CS pins is limited to 76 mV. The high-side buck switch skips a cycle if the sensed voltage does not fall below this threshold during the buck switch off time. In boost operation, the maximum peak voltage across CS and CSG is limited to 170mV. If the peak current in the low-side boost switch causes the CS pin to exceed this threshold voltage, the boost switch is turned off for the remainder of the clock cycle.

Applying the appropriate voltage to the MODE pin of the LM5175 enables hiccup mode fault protection (see MODE Pin Configuration). In the hiccup mode, the controller shuts down after detecting cycle-by-cycle current limiting for 128 consecutive cycles and the soft-start capacitor is discharged. The soft-start capacitor is automatically released after 4000 oscillator clock cycles and the controller restarts. If hiccup mode protection is not enabled through the MODE pin, the LM5175 will operate in cycle-by-cycle current limiting as long as the overload condition persists.

8.3.6 Average Input/Output Current Limiting

The LM5175 provides optional average current limiting capability to limit either the input or the output current of the DC/DC converter. The average current limiting circuit uses an additional current sense resistor connected in series with the input supply or output voltage of the converter. A current sense gm amplifier with inputs at the ISNS(+) and ISNS(-) pins monitors the voltage across the sense resistor and compares it with an internal 50 mV reference. If the drop across the sense resistor is greater than 50 mV, the gm amplifier gradually discharges the soft-start capacitor. When the soft-start capacitor discharges below the 0.8-V feedback reference voltage VREF, the output voltage of the converter decreases to limit the input or output current. The average current limiting feature can be used in applications requiring a regulated current from the input supply or into the load. The target constant current is given by Equation 4:

Equation 4. LM5175 eq04_snvsa37_ilimit_average.gif

The average current loop can be disabled by shorting the ISNS(+) and ISNS(-) pins together.

8.3.7 CCM/DCM Operation

The LM5175 allows selection of continuous conduction mode (CCM) or discontinuous conduction mode (DCM) operation using the MODE pin (see MODE Pin Configuration). In CCM operation the inductor current can flow in either direction and the controller switches at a fixed frequency regardless of the load current. This mode is useful for noise-sensitive applications where a fixed switching eases filter design. In DCM operation the synchronous rectifier MOSFETs emulate diodes as LDRV1 or HDRV2 turn-off for the remainder of the PWM cycle when the inductor current reaches zero. The DCM mode results in reduced frequency operation at light loads, which lowers switching losses and increases light load efficiency of the converter.

8.3.8 Frequency and Synchronization (RT/SYNC)

The LM5175 switching frequency can be programmed between 100 kHz and 600 kHz using a resistor from the RT/SYNC pin to AGND. The RT resistor is related to the nominal switching frequency (Fsw) by the following equation:

Equation 5. LM5175 eq_snvsa37_RT_frequency.gif

Figure 3 in the Typical Characteristics shows the relationship between the programmed switching frequency (Fsw) and the RT resistor.

The RT/SYNC pin can also be used for synchronizing the internal oscillator to an external clock signal. The external synchronization pulse is ac coupled using a capacitor to the RT/SYNC pin. The voltage at the RT/SYNC pin must not exceed 3.3 V peak. The external synchronization pulse frequency should be higher than the internally set oscillator frequency and the pulse width should be between 75 ns and 500 ns.

LM5175 RT_sync_functional.gif Figure 22. Using External SYNC

8.3.9 Frequency Dithering

The LM5175 provides an optional frequency dithering function that is enabled by connecting a capacitor from DITH to AGND. Figure 23 illustrates the dithering circuit. A triangular waveform centered at 1.22 V is generated across the CDITH capacitor. This triangular waveform modulates the oscillator frequency by ±5% of the nominal frequency set by the RT resistor. The CDITH capacitance value sets the rate of the low frequency modulation. A lower CDITH capacitance will modulate the oscillator frequency at a faster rate than a higher capacitance. For the dithering circuit to effectively reduce peak EMI, the modulation rate must be much less than the oscillator frequency (Fsw). Equation 6 calculates the DITH pin capacitance required to set the modulation frequency, FMOD. Connecting the DITH pin directly to AGND disables frequency dithering, and the internal oscillator operates at a fixed frequency set by the RT resistor. Dither is disabled when external SYNC is used.

Equation 6. LM5175 eq_snvsa37_dither_cap.gif
LM5175 dither_operation_snvsa37.gif Figure 23. Dither Operation

8.3.10 Output Overvoltage Protection (OVP)

The LM5175 provides an output overvoltage protection (OVP) circuit that turns off the gate drives when the feedback voltage is 7.5% above the 0.8 V feedback reference voltage VREF. Switching resumes once the output falls within 5% of VREF.

8.3.11 Power Good (PGOOD)

PGOOD is an open drain output that is pulled low when the voltage at the FB pin is outside -9% / +10% of the nominal 0.8-V reference voltage. The PGOOD internal N-Channel MOSFET pull-down strength is typically 4.2 mA. This pin can be connected to a voltage supply of up to 8 V through a pull-up resistor.

8.3.12 Gm Error Amplifier

The LM5175 has a gm error amplifier for loop compensation. The gm amplifier output (COMP) range is 0.3 V to 3 V. Connect an Rc1-Cc1 compensation network between COMP and ground for type II (PI) compensation (see Figure 24). Another pole is usually added using Cc2 to suppress higher frequency noise.

The COMP output voltage (VCOMP) range limits the possible VIN and IOUT range for a given design. In buck mode, the maximum VIN for which the converter can regulate the output at no load is when VCOMP reaches 0.3 V. Equation 7 gives VCOMP as a function of VIN at no load in CCM buck mode:

Equation 7. LM5175 eq_snvsa37_VCOMP_buck.gif

Where DBUCK in the equation Equation 7 is the buck duty cycle given by:

Equation 8. LM5175 eq_snvsa37_duty_buck.gif

A larger L1, lower slope ripple (higher CSLOPE), smaller sense resistor (RSENSE), and higher frequency can increase the maximum VIN range for buck operation.

For boost mode, the minimum VIN for which the converter can regulate the output at full load is when VCOMP reaches 3 V. Equation 9 gives VCOMP as a function of VIN in boost mode:

Equation 9. LM5175 eq_snvsa37_VCOMP_boost.gif

Where DBOOST in the Equation 9 is the boost duty cycle given by:

Equation 10. LM5175 eq_snvsa37_duty_boost.gif

A larger L1, lower slope ripple (higher CSLOPE), smaller sense resistor (RSENSE), and higher frequency can extend the minimum VIN range for boost operation.

8.3.13 Integrated Gate Drivers

The LM5175 provides four N-channel MOSFET gate drivers: two floating high-side gate drivers at the HDRV1 and HDRV2 pins, and two ground referenced low-side drivers at the LDRV1 and LDRV2 pins. Each driver is capable of sourcing 1.5 A and sinking 2 A peak current. In buck operation, LDRV1 and HDRV1 are switched by the PWM controller while HDRV2 remains continuously on. In boost operation, LDRV2 and HDRV2 are switched while HDRV1 remains continuously on.

In DCM buck operation, LDRV1 and HDRV2 turn off when the inductor current drops to zero (diode emulation). In a DCM boost operation, HDRV2 turns off when inductor current drops to zero.

The gate drive output HDRV2 remains off during soft-start to prevent reverse current flow from a pre-biased output.

The low-side gate drivers are powered from VCC and the high-side gate drivers HDRV1 and HDRV2 are powered from bootstrap capacitors CBOOT1 (between BOOT1 and SW1) and CBOOT2 (between BOOT2 and SW2) respectively. The CBOOT1 and CBOOT2 capacitors are charged through external Schottky diodes connected to the VCC pin as shown in Figure 24.

8.3.14 Thermal Shutdown

The LM5175 is protected by a thermal shutdown circuit that shuts down the device when the internal junction temperature exceeds 165°C (typical). The soft-start capacitor is discharged when thermal shutdown is triggered and the gate drivers are disabled. The converter automatically restarts when the junction temperature drops by the thermal shutdown hysteresis of 15°C below the thermal shutdown threshold.

8.4 Device Functional Modes

Please refer to Enable/UVLO section for the description of EN/UVLO pin function. Shutdown, Standby, and Operating Modes section lists the shutdown, standby, and operating modes for LM5175 as a function of EN/UVLO and VCC voltages.

8.4.1 Shutdown, Standby, and Operating Modes

EN/UVLO VCC DEVICE MODE
EN/UVLO < 0.7 V — Shutdown: VCC off, No switching
0.7 V < EN/UVLO < 1.23 V — Standby: VCC on, No switching
EN/UVLO > 1.23 V VCC < 3.3 V Standby: VCC on, No switching
EN/UVLO > 1.23 V VCC > 3.3 V Operating: VCC on, Switching enabled

8.4.2 MODE Pin Configuration

The MODE pin is used to select CCM/DCM operation and hiccup mode current limit. Mode is latched at startup.

MODE PIN CONNECTION LIGHT LOAD MODE HICCUP FAULT PROTECTION
Connect to VCC CCM No Hiccup
RMODE to AGND = 93.1 kΩ CCM Hiccup Enabled
RMODE to AGND = 49.9 kΩ DCM Hiccup Enabled
Connect to AGND DCM No Hiccup

9 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

9.1 Application Information

The LM5175 is a four-switch buck-boost controller. A quick-start tool on the LM5175 product webpage can be used to design a buck-boost converter using the LM5175. Alternatively, Webench®software can create a complete buck-boost design using the LM5175 and generate bill of materials, estimate efficiency, solution size, and cost of the complete solution. The following sections describe a detailed step-by-step design procedure for a typical application circuit.

9.2 Typical Application

A typical application example is a buck-boost converter operating from a wide input voltage range of 6 V to 36 V and providing a stable 12 V output voltage with current capability of 6 A.

LM5175 sch_ref_snvsa37.gif Figure 24. LM5175 Four-Switch Buck Boost Application Schematic

9.2.1 Design Requirements

For this design example, the following are used as the input parameters.

DESIGN PARAMETER EXAMPLE VALUE
Input Voltage Range 6 V to 36 V
Output 12 V
Load Current 6 A
Switching Frequency 300 kHz
Mode CCM, Hiccup

9.2.2 Detailed Design Procedure

9.2.2.1 Frequency

The switching frequency of LM5175 is set by an RT resistor connected from RT/SYNC pin to AGND. The RT resistor required to set the desired frequency is calculated using Equation 5 or Figure 3 . A 1% standard resistor of 84.5 kΩ is selected for Fsw = 300 kHz.

9.2.2.2 VOUT

The output voltage is set using a resistor divider to the FB pin. The internal reference voltage is 0.8 V. Normally the bottom resistor in the resistor divider is selected to be in the 1 kΩ to 100 kΩ range. Select

Equation 11. LM5175 eq07_snvsa37_RFB1.gif

The top resistor in the feedback resistor divider is selected using Equation 12:

Equation 12. LM5175 eq08_snvsa37_RFB2.gif

9.2.2.3 Inductor Selection

The inductor selection is based on consideration of both buck and boost modes of operation. For the buck mode, inductor selection is based on limiting the peak to peak current ripple ΔIL to ~40% of the maximum inductor current at the maximum input voltage. The target inductance for the buck mode is:

Equation 13. LM5175 eq_snvsa37_Lbuck.gif

For the boost mode, the inductor selection is based on limiting the peak to peak current ripple ΔIL to ~40% of the maximum inductor current at the minimum input voltage. The target inductance for the boost mode is:

Equation 14. LM5175 eq_snvsa37_Lboost.gif

In this particular application, the buck inductance is larger. Choosing a larger inductance reduces the ripple current but also increases the size of the inductor. A larger inductor also reduces the achievable bandwidth of the converter by moving the right half plane zero to lower frequencies. Therefore a judicious compromise should be made based on the application requirements. For this design a 4.7-µH inductor is selected. With this inductor selection, the inductor current ripple is 5.7 A, 4.3 A, and 2.1 A, at VIN of 36 V, 24 V, and 6 V respectively.

The maximum average inductor current occurs at the minimum input voltage and maximum load current:

Equation 15. LM5175 eq_snvsa37_iLmax_boost.gif

where a 90% efficiency is assumed. The peak inductor current occurs at minimum input voltage and is given by:

Equation 16. LM5175 eq_snvsa37_iLpeak_boost.gif

To ensure sufficient output current, the current limit threshold must be set to allow the maximum load current in boost operation. To ensure that the inductor does not saturate in current limit, the peak saturation current of the inductor should be higher than the maximum current limit. Adjusting for a ±20% current limit threshold tolerance, the peak inductor current limit is:

Equation 17. LM5175 eq_snvsa37_iLsat.gif

Therefore, the inductor saturation current should be greater than 21.6 A. If hiccup mode protection is not enabled, the RMS current rating of the inductor should be sufficient to tolerate continuous operation in cycle-by-cycle current limiting.

9.2.2.4 Output Capacitor

In the boost mode, the output capacitor conducts high ripple current. The output capacitor RMS ripple current is given by Equation 18 where the minimum VIN corresponds to the maximum capacitor current.

Equation 18. LM5175 eq14_snvsa37_ICOUT_rms.gif

In this example the maximum output ripple RMS current is ICOUT(RMS) = 6 A. A 5-mΩ output capacitor ESR causes an output ripple voltage of 60 mV as given by:

Equation 19. LM5175 eq_snvsa37_voripple_esr.gif

A 400 µF output capacitor causes a capacitive ripple voltage of 25 mV as given by:

Equation 20. LM5175 eq_snvsa37_voripple_cap.gif

Typically a combination of ceramic and bulk capacitors is needed to provide low ESR and high ripple current capacity. The complete schematic in Figure 24 at the end of this section shows a good starting point for COUT for typical applications.

9.2.2.5 Input Capacitor

In the buck mode, the input capacitor supplies high ripple current. The RMS current in the input capacitor is given by:

Equation 21. LM5175 eq17_snvsa37_ICIN_rms.gif

The maximum RMS current occurs at D = 0.5, which gives ICIN(RMS) = IOUT/2 = 3 A. A combination of ceramic and bulk capacitors should be used to provide short path for high di/dt current and to reduce the output voltage ripple. The complete schematic in Figure 24 is a good starting point for CIN for typical applications.

9.2.2.6 Sense Resistor (RSENSE)

The current sense resistor between the CS and CSG pins should be selected to ensure that current limit is set high enough for both buck and boost modes of operation. For the buck operation, the current limit resistor is given by:

Equation 22. LM5175 eq_snvsa37_rsense_buck.gif

For the boost mode of operation, the current limit resistor is given by:

Equation 23. LM5175 eq_snvsa37_rsense_boost.gif

The closest standard value of RSENSE = 8 mΩ is selected based on the boost mode operation.

The maximum power dissipation in RSENSE happens at VIN(MIN):

Equation 24. LM5175 eq_snvsa37_Pmax_Rsense.gif

Based on this, select the current sense resistor with power rating of 2 W or higher.

For some application circuits, it may be required to add a filter network to attenuate noise in the CS and CSG sense lines. Please see Figure 24 for typical values. The filter resistance should not exceed 100 Ω.

9.2.2.7 Slope Compensation

For stable current loop operation and to avoid sub-harmonic oscillations, the slope capacitor should be selected based on Equation 25:

Equation 25. LM5175 eq_snvsa37_slope.gif

This slope compensation results in “dead-beat” operation, in which the current loop disturbances die out in one switching cycle. Theoretically a current mode loop is stable with half the “dead-beat” slope (twice the calculated slope capacitor value in Equation 25). A smaller slope capacitor results in larger slope signal which is better for noise immunity in the transition region (VIN~VOUT). A larger slope signal, however, restricts the achievable input voltage range for a given output voltage, switching frequency, and inductor. For this design CSLOPE = 100 pF is selected for better transition region behavior while still providing the required VIN range. This selection of slope capacitor, inductor, switching frequency, and inductor satisfies the COMP range limitation explained in Gm Error Amplifier section.

9.2.2.8 UVLO

The UVLO resistor divider must be designed for turn-on below 6V. Selecting a RUV2 = 249 kΩ gives a UVLO hysteresis of 0.8 V. The lower UVLO resistor is the selected using Equation 26:

Equation 26. LM5175 eq_snvsa37_RUV1.gif

A standard value of 59.0 kΩ is selected for RUV1.

When programming the UVLO threshold for lower input voltage operation, it is important to choose MOSFETs with gate (Miller) plateau voltage lower than the minimum VIN.

9.2.2.9 Soft-Start Capacitor

The soft-start time is programmed using the soft-start capacitor. The relationship between CSS and the soft-start time is given by:

Equation 27. LM5175 eq22_snvsa37_tss_soft_start.gif

CSS = 0.1 µF gives a soft-start time of 16 ms.

9.2.2.10 Dither Capacitor

The dither capacitor sets the modulation frequency of the frequency dithering around the nominal switching frequency. A larger CDITH results in lower modulation frequency. For proper operation the modulation frequency (FMOD) must be much lower than the switching frequency. Use Equation 28 to select CDITH for the target modulation frequency.

Equation 28. LM5175 eq_snvsa37_dither_cap.gif

For the current design dithering is not being implemented. Therefore a 0 Ω resistor from the DITH pin to AGND disables this feature.

9.2.2.11 MOSFETs QH1 and QL1

The input side MOSFETs QH1 and QL1 need to withstand the maximum input voltage of 36 V. In addition they must withstand the transient spikes at SW1 during switching. Therefore QH1 and QL1 should be rated for 60 V. The gate plateau voltages of the MOSFETs should be smaller than the minimum input voltage of the converter, otherwise the MOSFETs may not fully enhance during startup or overload conditions.

The power loss in QH1 in the boost mode of operation is approximated by:

Equation 29. LM5175 eq_snvsa37_QH1_Pboost.gif

The power loss in QH1 in the buck mode of operation consists of both conduction and switching loss components given by Equation 30 and Equation 31 respectively:

Equation 30. LM5175 eq_snvsa37_QH1_Pcond.gif
Equation 31. LM5175 eq_snvsa37_QH1_Psw.gif

The rise (tr) and the fall (tf) times are based on the MOSFET datasheet information or measured in the lab. Typically a MOSFET with smaller RDSON (smaller conduction loss) will have longer rise and fall times (larger switching loss).

The power loss in QL1 in the buck mode of operation is given by the following equation:

Equation 32. LM5175 eq_snvsa37_QL1_buck.gif

9.2.2.12 MOSFETs QH2 and QL2

The output side MOSFETs QH2 and QL2 see the output voltage of 12 V and additional transient spikes at SW2 during switching. Therefore QH2 and QL2 should be rated for 20 V or more. The gate plateau voltages of the MOSFETs should be smaller than the minimum input voltage of the converter, otherwise the MOSFETs may not fully enhance during startup or overload conditions.

The power loss in QH2 in the buck mode of operation is approximated by:

Equation 33. LM5175 eq_snvsa37_QH2_Pbuck.gif

The power loss in QL2 in the boost mode of operation consists of both conduction and switching loss components given by Equation 34 and Equation 35 respectively:

Equation 34. LM5175 eq_snvsa37_QL2_Pcond.gif
Equation 35. LM5175 eq_snvsa37_QL2_Psw.gif

The rise (tr) and the fall (tf) times can be based on the MOSFET datasheet information or measured in the lab. Typically a MOSFET with smaller RDSON (lower conduction loss) has longer rise and fall times (larger switching loss).

The power loss in QH2 in the boost mode of operation is given by the following equation:

Equation 36. LM5175 eq_snvsa37_QH2_boost.gif

9.2.2.13 Frequency Compensation

This section presents the control loop compensation design procedure for the LM5175 buck-boost controller. The LM5175 operates mainly in buck or boost modes, separated by a transition region, and therefore the control loop design is done for both buck and boost operating modes. Then a final selection of compensation is made based on the mode that is more restrictive from a loop stability point of view. Typically for a converter designed to go deep into both buck and boost operating regions, the boost compensation design is more restrictive due to the presence of a right half plane zero (RHPZ) in the boost mode.

The boost power stage output pole location is given by:

Equation 37. LM5175 eq_snvsa37_fp1_boost.gif

where ROUT = 2 Ω corresponds to the maximum load of 6 A.

The boost power stage ESR zero location is given by:

Equation 38. LM5175 eq_snvsa37_fz_esr.gif

The boost power stage RHP zero location is given by:

Equation 39. LM5175 eq_snvsa37_fRHP.gif

where DMAX is the maximum duty cycle at the minimum VIN.

The buck power stage output pole location is given by:

Equation 40. LM5175 eq_snvsa37_fp1_buck.gif

The buck power stage ESR zero location is the same as the boost power stage ESR zero.

It is clear from Equation 39 that RHP zero is the main factor limiting the achievable bandwidth. For a robust design the crossover frequency should be less than 1/3 of the RHP zero frequency. Given the position of the RHP zero, a reasonable target bandwidth in boost operation is around 4 kHz:

Equation 41. LM5175 eq_snvsa37_fbw.gif

For some power stages, the boost RHP zero might not be as restrictive. This happens when the boost maximum duty cycle (DMAX) is small, or when a really small inductor is used. In those cases, compare the limits posed by the RHP zero (fRHP/3) with 1/20 of the switching frequency and use the smaller of the two values as the achievable bandwidth.

The compensation zero can be placed at 1.5 times the boost output pole frequency. Keep in mind that this locates the zero at 3 times the buck output pole frequency which results in approximately 30 degrees of phase loss before crossover of the buck loop and 15 degrees of phase loss at intermediate frequencies for the boost loop:

Equation 42. LM5175 eq_snvsa37_fz_comp.gif

If the crossover frequency is well below the RHP zero and the compensation zero is placed well below the crossover, the compensation gain resistor Rc1 is calculated using the approximation:

Equation 43. LM5175 eq_snvsa37_Rc1.gif

where DMAX is the maximum duty cycle at the minimum VIN in boost mode and ACS is the current sense amplifier gain. The compensation capacitor Cc1 is then calculated from:

Equation 44. LM5175 eq_snvsa37_Cc1.gif

The standard values of compensation components are selected to be Rc1 = 10 kΩ and Cc1 = 22 nF.

A high frequency pole is added to suppress switching noise using a 100 pF capacitor (Cc2) in parallel with Rc1 and Cc1. These values provide a good starting point for the compensation design. Each design should be tuned in the lab to achieve the desired balance between stability margin across the operating range and transient response time.

9.2.3 Application Curves

LM5175 D008_SNVA37.gif Figure 25. Efficiency vs Load
LM5175 wvfm02_load_step_2_4a_snvu440.gif Figure 27. Load Transient Response
LM5175 wvfm01_vout_ripple_snvu440.gif Figure 26. Output Voltage Ripple
LM5175 wvfm03_linetr_8V_24V_2A_10ms_snvu440.gif Figure 28. Line Transient Response (8 V - 24 V, IOUT = 2 A)

 

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