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  • DS125BR111 具有均衡器的低功耗 12.5Gbps 1 通道线性中继器

    • ZHCSCR3C October   2012  – August 2014 DS125BR111

      PRODUCTION DATA.  

  • CONTENTS
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  • DS125BR111 具有均衡器的低功耗 12.5Gbps 1 通道线性中继器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 简化电路原理图
  5. 5 修订历史记录
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Electrical Characteristics — Serial Management Bus Interface
    7. 7.7 Timing Requirements
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
      1. 8.2.1 Functional Datapath Blocks
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Pin Control Mode
      2. 8.4.2 SMBus Mode
      3. 8.4.3 Signal Conditioning Settings
    5. 8.5 Programming
    6. 8.6 Register Maps
      1. 8.6.1 Transfer Of Data Via The SMBus
      2. 8.6.2 SMBus Transactions
      3. 8.6.3 Writing a Register
      4. 8.6.4 Reading a Register
      5. 8.6.5 SMBus Register Information
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Signal Integrity
      2. 9.1.2 RX-Detect in SAS/SATA Applications
      3. 9.1.3 PCIe Applications
        1. 9.1.3.1 RXDET When Using SMBus Modes
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 商标
    2. 12.2 静电放电警告
    3. 12.3 术语表
  13. 13机械封装和可订购信息
  14. 重要声明
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DATA SHEET

DS125BR111 具有均衡器的低功耗 12.5Gbps 1 通道线性中继器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 每通道 65mW（典型值）低功耗
  • 支持链路协商
  • 支持带外 (OOB) 信令
  • 高级信号调节 I/O
    • 6GHz 时，接收高达 10dB 的连续时间线性均衡器 (CTLE)
    • 线性输出驱动器
    • 输出电压范围超过 1200mV
  • 可通过引脚选择、EEPROM 或 SMBus 接口进行编程
  • 单电源电压：2.5V 或 3.3V
  • -40°C 至 85°C 的工作温度范围
  • 4mm x 4mm 24 引脚超薄型四方扁平无引线 (WQFN) 封装内的直通引脚分配

2 应用

  • SAS-1/2/3 和 SATA-1/2/3
  • PCI Express 1/2/3
  • 其它速率高达 12.5Gbps 的专有接口

3 说明

DS125BR111 是一款超低功耗的高性能中继器/转接驱动器，旨在支持高达 12.5Gbps 的 1 通道高速接口。 6GHz 时，接收器的连续时间线性均衡器 (CTLE) 可在每个通道上提高 3-10dB。 在 SAS-3 或 PCIe Gen-3 应用中工作时，DS125BR111 保留发射信号特性，从而使得主机控制器和端点能够协商发射均衡器系数。 链接协商协议的透明度能够最大程度增加互连通道内器件实体布局的灵活性并提高通道的总体性能。

可通过引脚、软件（SMBus 或 I2C）来轻松应用相关可编程设置，或者通过外部 EEPROM 来载入此设置。 在 EEPROM 模式下，配置信息在加电时被自动载入，这样就免除了对于外部微控制器或软件驱动程序的需要。

器件信息(1)

器件型号 封装 封装尺寸（标称值）
DS125BR111 WQFN (24) 4.00mm x 4.00mm
  1. 要了解所有可用封装，请见数据表末尾的可订购产品附录。

4 简化电路原理图

111sch_r2.gif

5 修订历史记录

Changes from B Revision (July 2014) to C Revision

  • Changed 已将数据表流程和版面布局更改为符合全新的 TI 标准。 添加了以下章节：应用和实施；电源相关建议；布局；器件和文档支持；机械、封装和订购信息Go

Changes from A Revision (January 2014) to B Revision

  • Changed 特性Go

Changes from * Revision (April 2013) to A Revision

  • Changed 已将国标数据表格式改为 TI 格式Go

6 Pin Configuration and Functions

24 Pin
Package RTW
Top View
111pinout.gif

The center DAP on the package bottom is the only device GND connection. This pad must be connected to GND through multiple (minimum of 4) vias to ensure optimal electrical and thermal performance.

Pin Functions

PIN I/O DESCRIPTION
NAME NO.
DIFFERENTIAL HIGH SPEED I/O
INB+, INB- 11, 12 I Inverting and non-inverting CML differential inputs to the equalizer. On-chip 50 Ω termination resistor connects INB+ to VDD and INB- to VDD when enabled by RXDET control logic.
AC coupling required on high-speed I/O
OUTB+, OUTB- 20, 19 O Inverting and non-inverting 50 Ω driver outputs. Compatible with AC coupled CML inputs.
AC coupling required on high-speed I/O
INA+, INA- 24, 23 I Inverting and non-inverting CML differential inputs to the equalizer. On-chip 50 Ω termination resistor connects INA+ to VDD and INA- to VDD when enabled by RXDET control logic.
AC coupling required on high-speed I/O
OUTA+, OUTA- 7, 8 O Inverting and non-inverting 50 Ω driver outputs. Compatible with AC coupled CML inputs.
AC coupling required on high-speed I/O
CONTROL PINS — SHARED (LVCMOS)
ENSMB 3 I, 4-LEVEL,
LVCMOS		 System Management Bus (SMBus) enable Pin
Tie 1 kΩ to VDD = Register Access SMBus Slave mode
FLOAT = Read External EEPROM (Master SMBus Mode)
Tie 1 kΩ to GND = Pin Mode
ENSMB = Float or 1 (SMBus MODEs)
SCL 5 I, LVCMOS,
O, OPEN Drain		 ENSMB Master or Slave mode
SMBus clock input Pin is enabled (slave mode).
Clock output when loading EEPROM configuration (master mode).
SDA 4 I, LVCMOS,
O, OPEN Drain		 ENSMB Master or Slave mode
The SMBus bidirectional SDA Pin is enabled. Data input or open drain output. External pull-up required as per SMBus protocol (typically in the 2 kΩ to 5 kΩ range). This pin is 3.3 V-tolerant.
AD0-AD3 10, 9, 2, 1 I, LVCMOS ENSMB Master or Slave mode
SMBus Slave Address Inputs. In SMBus mode, these Pins are the user set SMBus slave address inputs.
READEN 17 I, LVCMOS ENSMB = Float: When using an External EEPROM, a logic low on this pin starts the load from the external EEPROM
ENSMB = 1: When using SMBus Slave Mode the VOD_SEL/READEN pin must be tied Low for the AD[3:0] to be active. If this pin is tied High or Floated an address of 0xB0 will be used for the DS125BR111.
DONE 18 O, LVCMOS When using an External EEPROM (ENSMB = Float), Valid Register Load Status Output
HIGH = External EEPROM load failed or incomplete
LOW = External EEPROM load passed
ENSMB = 0 (PIN MODE)
EQA0
EQB0		 10
1		 I, 4-LEVEL,
LVCMOS 		EQA0 and EQB0 control the level of equalization of the A/B directions. The Pins are defined as EQx0 only when ENSMB is de-asserted (low). When ENSMB goes high the SMBus registers provide independent control of each channel. See Table 4.
EQA1
EQB1		 9
2		 I, 4-LEVEL,
LVCMOS 		EQA1 and EQB1 are not used in the DS125BR111 design. These pins should always be tied to GND.
VODA_DB 4 I, 4-LEVEL,
LVCMOS		 VODA_DB controls the CHA output amplitude dynamic range, for SAS and PCIe applications it should be held Low. The Pin is defined as VODA_DB only when ENSMB is de-asserted (low). When ENSMB goes high the SMBus registers provide control of each channel, pin 4 is converted to SDA. See Table 5.
VODB_DB 5 I, 4-LEVEL,
LVCMOS		 VODB_DB controls the CHB output amplitude dynamic range, for SAS and PCIe applications it should be held Low. The Pin is defined as VODB_DB only when ENSMB is de-asserted (low). When ENSMB goes high the SMBus registers provide control of each channel, pin 5 is converted to SCL. See Table 5.
SD_TH 14 I, 4-LEVEL,
LVCMOS 		Controls the internal Signal Detect Threshold. This detection threshold is for system debug only and does not control the high speed datapath.
See Table 3.
VOD_SEL 17 I, 4-LEVEL,
LVCMOS		 VOD_SEL controls the low frequency ratio of input voltage to output voltage amplitude. See Table 5.
RXDET 18 I, 4-LEVEL,
LVCMOS 		The RXDET Pin controls the receiver detect function. Depending on the input level, a 50 Ω or > 50 kΩ termination to the power rail is enabled. In a SAS/SATA system RXDET should be set to a Logic "1" state to keep the termination always enabled.
The RXDET pin only controls the RXDET function in PIN MODE. PCIe applications which require SMBus Mode functionality must utilize a specific register write sequence documented in PCIe Applications . If this sequence is not utilized, SMBus configuration modes will default the input terminations to active (50 Ω). See Table 2 .
CONTROL PINS — BOTH PIN AND SMBus MODES (LVCMOS)
RES 13 I, 4-LEVEL,
LVCMOS 		Reserved:
This input must be left Floating.
VDD_SEL 16 I, FLOAT Controls the internal regulator
Float = 2.5 V mode
Tie GND = 3.3 V mode
PWDN 6 I, LVCMOS Tie High = Low power - power down
Tie GND = Normal Operation
See Table 2.
POWER (See Figure 11)
VIN 15 Power In 3.3 V mode, feed 3.3 V to VIN
In 2.5 V mode, leave floating.
VDD 21, 22 Power Power supply pins CML/analog
2.5 V mode, connect to 2.5 V
3.3 V mode, decouple each VDD pin with 0.22 µF cap to GND
GND DAP Power Ground pad (DAP - die attach pad).

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply Voltage (VDD - 2.5 V) -0.5 +2.75 V
Supply Voltage (VIN - 3.3 V) -0.5 +4.0 V
LVCMOS Input/Output Voltage -0.5 +4.0 V
CML Input Voltage -0.5 VDD + 0.5 V
CML Input Current -30 +30 mA
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range -40 125 °C
Tsolder Lead Temperature Range Soldering (4 sec.)(1) 260 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(2) -5000 5000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(3) -1250 1250
(1) For soldering specifications: See application note SNOA549.
(2) JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.
(3) JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply Voltage (2.5 V mode) 2.375 2.5 2.625 V
Supply Voltage (3.3 V mode) 3.0 3.3 3.6 V
Ambient Temperature -40 25 +85 °C
SMBus (SDA, SCL) 3.6 V
Supply Noise up to 50 MHz(2) 100 mVp-p

7.4 Thermal Information

THERMAL METRIC(1) DS125BR111 UNIT
RTW
24 PINS
RθJA Junction-to-ambient thermal resistance 35.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 34.0
RθJB Junction-to-board thermal resistance 13.4
ψJT Junction-to-top characterization parameter 0.3
ψJB Junction-to-board characterization parameter 13.4
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.3
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER
IDD Current Consumption VODx_DB = 0, EQ = 0, VOD_SEL = 1,
RXDET = 1, PWDN = 0
VIN = 2.625 or 3.6 V		 40 60 mA
Power Down Current Consumption PWDN = 1 7 13 mA
VDD Integrated LDO Regulator VIN = 3.0 - 3.6 V 2.375 2.5 2.625 V
LVCMOS / LVTTL DC SPECIFICATIONS
Vih25 High Level Input Voltage 2.5 V Supply Mode 1.7 VDD V
Vih33 High Level Input Voltage 3.3 V Supply Mode 1.7 VIN V
Vil Low Level Input Voltage 0 0.7 V
Voh High Level Output Voltage
(DONE pin)		 Ioh = −4 mA 2.0 V
Vol Low Level Output Voltage
(DONE pin)		 Iol = 4 mA 0.4 V
Iih Input High Current (PWDN pin) VIN = 3.6 V,
LVCMOS = 3.6 V		 -15 +15 µA
Iil Input Low Current (PWDN pin) VIN = 3.6 V,
LVCMOS = 0 V		 -15 +15 µA
4-LEVEL INPUT DC SPECIFICATIONS
Iih Input High Current with internal resistors
(4–level input pin)		 VIN = 3.6 V,
LVCMOS = 3.6 V		 +20 +80 µA
Iil Input Low Current with internal resistors
(4–level input pin)		 VIN = 3.6 V,
LVCMOS = 0 V		 -160 -40 µA
Vth Threshold 0 / R VDD = 2.5 V (2.5 V supply mode)
Internal LDO Disabled
See Table 1 for details		 0.40 V
Threshold R / Float 1.25
Threshold Float / 1 2.1
Threshold 0 / R VIN = 3.3 V (3.3 V supply mode)
Internal LDO Enabled
See Table 1 for details.		 0.55 V
Threshold R / Float 1.65
Threshold Float / 1 2.7
CML RECEIVER INPUTS (IN_n+, IN_n-)
RLRX-diff RX Differential return loss SDD11 10 MHz -19 dB
SDD11 2 GHz -14
SDD11 6-11.1 GHz -8
RLRX-cm RX Common mode return loss 0.05 - 5 GHz -10 dB
ZRX-dc RX DC common mode impedance Tested at VDD = 2.5 V 40 50 60 Ω
ZRX-diff-dc RX DC differential mode impedance Tested at VDD = 2.5 V 80 100 120 Ω
VRX-signal-det-diff-pp Signal detect assert level SD_TH = F (float),
0101 pattern at 12 Gbps		 50 mVp-p
VRX-idle-det-diff-pp Signal detect de-assert level SD_TH = F (float),
0101 pattern at 12 Gbps		 37 mVp-p
HIGH SPEED OUTPUTS
TTX-RISE-FALL Transmitter rise/fall time (3) 20% to 80% of differential output voltage 40 ps
TRF-MISMATCH Transmitter rise/fall mismatch (4) 20% to 80% of differential output voltage 0.01 UI
RLTX-DIFF TX Differential return loss SDD22 10 MHz - 2 GHz -15 dB
SDD22 5.5 GHz -12
SDD22 11.1 GHz -10 dB
RLTX-CM TX Common mode return loss 0.05 - 5 GHz -10 dB
ZTX-DIFF-DC DC differential TX impedance 100 Ω
ITX-SHORT Transmitter short circuit current limit Total current, output shorted to VDD or GND 20 mA
VTX-CM-DC-ACTIVE-IDLE-DELTA Absolute delta of DC common mode voltage during L0 and electrical idle 100 mV
VTX-CM-DC-LINE-DELTA Absolute delta of DC common mode voltage between TX+ and TX- 25 mV
HIGH SPEED OUTPUTS
VTX-diff1-pp Output Voltage Differential Swing Differential measurement with OUTx+ and OUTx-,
AC-Coupled and terminated by 50 Ω to GND,
Inputs AC-Coupled,
VODx_DB = 0 dB,
VID = 600 mVp-p
VOD = 001'b (0.7*VID) 		440 500 550 mVp-p
VTX-diff2-pp Output Voltage Differential Swing Differential measurement with OUTx+ and OUTx-,
AC-Coupled and terminated by 50 Ω to GND,
Inputs AC-Coupled,
VODx_DB = 0 dB,
VID = 1000 mVp-p
VOD = 001'b (0.7*VID) (5)		 630 700 740 mVp-p
VTX-diff3-pp Output Voltage Differential Swing Differential measurement with OUTx+ and OUTx-,
AC-Coupled and terminated by 50 Ω to GND,
Inputs AC-Coupled,
VODx_DB = 0 dB,
VID = 600 mVp-p
VOD = 111'b (1.05*VID) (5)		 570 650 740 mVp-p
VTX-diff4-pp Output Voltage Differential Swing Differential measurement with OUTx+ and OUTx-,
AC-Coupled and terminated by 50 Ω to GND,
Inputs AC-Coupled,
VODx_DB = 0 dB,
VID = 1000 mVp-p
VOD = 111'b (1.05*VID) (5)		 800 1010 1215 mVp-p
TTX-IDLE-DATA Time to transition to valid differential signal after idle VID = 1.0 Vp-p, 3 Gbps 0.04 ns
TTX-DATA-IDLE Time to transition to idle after differential signal VID = 1.0 Vp-p, 3 Gbps 0.70 ns
TPD Differential Propagation Delay EQ = Level 1 to Level 4 70 ps
EQUALIZATION
DJE1 Residual Deterministic Jitter at 6 Gbps Input: 5” Differential Stripline,
5mil trace width, FR4,
VID = 0.8 Vp-p,
PRBS15, EQ = 0x01,
VOD = 111'b, VODx_DB = 0 dB		 0.06 UI
DJE2 Residual Deterministic Jitter at 12 Gbps Input: 5” Differential Stripline,
5mil trace width, FR4,
VID = 0.8 Vp-p,
PRBS15, EQ = 0x01,
VOD = 111'b, VODx_DB = 0 dB		 0.12 UI
RJADD1 Additive Random Jitter (1) Evaluation Module (EVM) only, FR4,
VID = 0.8 Vp-p,
PRBS7, EQ = 0x00,
VOD = 111'b, VODx_DB = 0 dB		 < 300 fs RMS
RJADD2 Additive Random Jitter (1) Input: 10" Differential Stripline,
5 mil trace width, FR4,
VID = 0.8 Vp-p,
PRBS7, EQ = 0x03,
VOD = 111'b, VODx_DB = 0 dB		 < 400 fs RMS
(1) Additive random jitter is given in RMS value by the following equation: RJADD = √[(Output Jitter)2 - (Input Jitter)2] . The typical source input jitter for these measurements is 150 fs RMS.
(2) Allowed supply noise (mVp-p sine wave) under typical conditions.
(3) Rise / Fall time measurements will vary based on EQ setting, Input Amplitude, and input edge rate.
(4) Mismatch between rise time and fall time for a given channel.
(5) The output VOD level is not fixed. It will be adjusted automatically based on the VID input amplitude level and the frequency content. The DS125BR111 repeater is designed to be transparent, so the TX-FIR (de-emphasis) is passed to the RX to support handshake negotiation link training.

7.6 Electrical Characteristics — Serial Management Bus Interface

Over recommended operating supply and temperature ranges unless other specified.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SERIAL BUS INTERFACE DC SPECIFICATIONS
VIL Data, Clock Input Low Voltage 0.8 V
VIH Data, Clock Input High Voltage 2.1 3.6 V
VOL Output Low Voltage SDA or SCL, IOL = 1.25 mA 0 0.36 V
VDD Nominal Bus Voltage 2.375 3.6 V
IIH-pin Input Leakage Per Device pin +20 +150 µA
IIL-pin Input Leakage Per Device pin -160 -40 µA
CI Capacitance for SDA and SCL See(1)(2) < 5 pF
RTERM External Termination Resistance pull to VDD = 2.5 V ± 5% OR 3.3 V ± 10% Pullup VDD = 3.3 V(1)(2)(3) 2000 Ω
Pullup VDD = 2.5 V(1)(2)(3) 1000 Ω
(1) Typical value.
(2) Recommended maximum capacitance load per bus segment is 400 pF.
(3) Maximum termination voltage should be identical to the device supply voltage.

7.7 Timing Requirements

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SERIAL BUS INTERFACE TIMING SPECIFICATIONS
FSMB Bus Operating Frequency ENSMB = VDD (Slave Mode) 400 kHz
ENSMB = FLOAT (Master Mode) (1) 280 400 520 kHz
tFALL SCL or SDA Fall Time Read operation
RPU = 4.7 kΩ, Cb < 50 pF		 60 ns
tRISE SCL or SDA Rise Time Read operation
RPU = 4.7 kΩ, Cb < 50 pF		 140 ns
tF Clock/Data Fall Time See(2) 300 ns
tR Clock/Data Rise Time See(2) 1000 ns
(1) The external EEPROM device address byte must be 0xA0 and capable of 1 MHz operation at 2.5 V and 3.3 V.
(2) Compliant to SMBus 2.0 physical layer specification. See System Management Bus (SMBus) Specification Version 2.0, section 3.1.1 SMBus common AC specifications for details.
edge.gifFigure 1. Output Rise And Fall Transition Time
30198703.gifFigure 2. Propagation Delay Timing Diagram
30198704.gifFigure 3. Transmit Idle-Data and Data-Idle Response Time
30198794.gifFigure 4. SMBus Timing Parameters

7.8 Typical Characteristics

C001_SNLS491.png
Test Conditions
Data Rate/Test Pattern: 1.5625 Gbps /
101010 Repeating Pattern
VOD: Level 6
EQ: Level 1
VOD_DB: 000'b
VDD: 2.5 V
Figure 5. Typical VOD vs. VDD
C005_SNLS491.png
Test Conditions
Data Rate/Test Pattern: 1.5625 Gbps / 101010 Repeating Pattern
EQ: Minimum
VOD_DB: 000'b
Temperature: 25°C
VDD: 2.5 V
Figure 7. Typical VOD Level vs. VID
C003_SNLS491.png
Test Conditions
Data Rate/Test Pattern: 1.5625 Gbps /
101010 Repeating Pattern
VOD: Level 6
EQ: Level 1
VOD_DB: 000'b
Temperature: 25°C
Figure 6. Typical VOD vs. Temperature

8 Detailed Description

8.1 Overview

The DS125BR111 compensates for lossy FR-4 printed circuit board backplanes and balanced cables. The DS125BR111 operates in 3 modes: pin Control Mode (ENSMB = 0), SMBus Slave Mode (ENSMB = 1) and SMBus Master Mode (ENSMB = float) to load register information from external EEPROM; please refer to SMBus Master Mode for additional information.

8.2 Functional Block Diagram

111blk.gifFigure 8. Channel A/B Datapath

8.2.1 Functional Datapath Blocks

The DS125BR111 datapath is designed to provide transparency for Rx-Tx training in SAS-3, PCIe Gen3, and other standards. The datapath includes input continuous time linear equalization coupled with a linear driver. This combination has a high level of transparency, achieving greater drive distance in applications which utilize Rx-Tx training.

The DS125BR111 datapath is optimized to work as a transparent driver and a transparent receiver. The typical DS125BR111 system placement breaks a long transmission line into two pieces. This often leads to one short and one long piece. While the DS125BR111 can be placed anywhere in the channel, to maximize channel extension placement with some attenuation on the DS125BR111 inputs works best. Refer to Application and Implementation for more application information regarding device placement.

8.3 Feature Description

The 4-level input pins utilize a resistor divider to help set the 4 valid levels and provide a wider range of control settings when ENSMB=0. There is an internal 30 kΩ pull-up and a 60 kΩ pull-down connected to the package Pin. These resistors, together with the external resistor connection combine to achieve the desired voltage level. Using the 1 kΩ pull-up, 1 kΩ pull-down, no connect, and 20 kΩ pull-down provide the optimal voltage levels for each of the four input states.

Table 1. 4–Level Control Pin Settings

LEVEL SETTING RESULTING PIN VOLTAGE
3.3 V MODE 2.5 V MODE
0 Tie 1 kΩ to GND 0.10 V 0.08 V
R Tie 20 kΩ to GND 1/3 x VIN 1/3 x VDD
Float Float (leave pin open) 2/3 x VIN 2/3 x VDD
1 Tie 1 kΩ to VIN or VDD VIN - 0.05 V VDD - 0.04 V

Typical 4-Level Input Thresholds

  • Level 1 - 2 = 0.16 * VIN or VDD
  • Level 2 - 3 = 0.5 * VIN or VDD
  • Level 3 - 4 = 0.83 * VIN or VDD

In order to minimize the startup current associated with the integrated 2.5 V regulator the 1 kΩ pull-up / pull-down resistors are recommended. If several 4 level inputs require the same setting, it is possible to combine two or more 1 kΩ resistors into a single lower value resistor. As an example; combining two inputs with a single 500 Ω resistor is a good way to save board space.

8.4 Device Functional Modes

8.4.1 Pin Control Mode

When in Pin mode (ENSMB = 0), equalization can be selected via pins for each side independently. For PCIe applications, the RXDET pin provides automatic and manual control for input termination (50 Ω or > 50 kΩ). The receiver electrical signal detect threshold is also adjustable via the SD_TH pin. The signal detect status can only be used for system debug.

8.4.2 SMBus Mode

When in SMBus mode (ENSMB = 1), the VOD (output amplitude), equalization, and termination disable features are all programmable on a individual channel basis. Upon assertion of ENSMB = 1, the EQx, VOD, and VODx_DB functions revert to register control immediately. The EQx pins are converted to AD0-AD3 SMBus address inputs. SD_TH remains active unless their respective registers are written to and the appropriate override bit is set, in which case it is ignored until ENSMB is driven low (Pin mode). On power-up or when ENSMB is driven low all registers are reset to their default state. If PWDN is asserted while ENSMB is high, the registers retain their current state.

Equalization settings accessible via the Pin controls were chosen to meet the needs of most high speed applications. If ongoing adjustment is needed, equalization settings can be accessed via the SMBus registers. Each input has a total of 4 possible equalization settings. The tables show the 4 settings when the device is in Pin mode. When using SMBus mode, the equalization, VOD and VOD_DB levels are set by registers.

The 4-level input Pins utilize a resistor divider to help set the 4 valid levels and provide a wide range of control settings when ENSMB = 0. There is an internal 30 kΩ pull-up and a 60 kΩ pull-down connected to the package pin. These resistors, together with the external resistor connection combine to achieve the desired voltage level. Using the 1 kΩ pull-up, 1 kΩ pull-down, no connect, and 20 kΩ pull-down provide the optimal voltage levels for each of the four input states.

Table 2. RX-Detect Settings

PWDN
(Pin 6)		 RXDET
(Pin 18)		 SMBus REG
0x0E and 0X15[3:2]		 INPUT TERMINATION RECOMMENDED USE COMMENTS
0 0 00'b Hi-Z Manual RX-Detect, input is high impedance mode
0 Tie 20 kΩ
to GND		 01'b Pre Detect: Hi-Z
Post Detect: 50 Ω		 PCIe only Auto RX-Detect, outputs test every 12 ms for 600 ms then stops; termination is Hi-Z until RX detection; once detected input termination is 50 Ω

Reset function by pulsing PWDN high for 5 µs then low again
0 Float
(PCIe Default)		 10'b Pre Detect: Hi-Z
Post Detect: 50 Ω		 PCIe only Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is Hi-Z until RX detection; once detected input termination is 50 Ω
0 1
(SAS Default)		 11'b 50 Ω All Others Manual RX-Detect, input is 50 Ω
1 X High Impedance Power down mode, input is Hi-Z, output drivers are disabled

Used to reset RX-Detect State Machine when held high for 5 µsec

When SMBus is used to control the DS125BR111 in a PCIe application, a specific register write sequence detailed in PCIe Applications is required on power-up to properly enable and control the RX_Detect process.

Table 3. Signal Detect Status Threshold Level(1)(2)

SD_TH
(Pin 14)		 SMBus REG BIT [3:2] and [1:0] [3:2] ASSERT LEVEL (mVp-p) [1:0] DE-ASSERT LEVEL (mVp-p)
3 Gbps 12 Gbps 3 Gbps 12 Gbps
0 10 18 75 14 55
R 01 12 40 8 22
F (default) 00 15 50 11 37
1 11 16 58 12 45
(1) VDD = 2.5 V, 25°C, 11 00 11 00 pattern at 3 Gbps and 101010 pattern at 12 Gbps
(2) Signal Detect Threshold (SD_TH) is for debugging purposes only, outputs are enabled unless the channel is set to PWDN

8.4.3 Signal Conditioning Settings

Table 4. Equalizer Settings

EQUALIZATION BOOST RELATIVE TO DC
Level EQx1 EQx0 EQ – 8 bits [7:0] dB at
1.5 GHz		 dB at
2.5 GHz		 dB at
4 GHz		 dB at
5 GHz		 dB at
6 GHz		 Suggested Use(1)
1 0 0 xxxx xx00 = 0x00 2.1 2.5 2.7 2.9 3.0
2 0 R xxxx xx01 = 0x01 4.0 5.1 6.4 6.8 7.4
3 0 Float xxxx xx10 = 0x02 5.5 7.0 8.3 8.6 8.9
4 0 1 xxxx xx11 = 0x03 6.8 8.3 9.5 9.6 9.8 SAS-3
(1) For SAS3 applications the best performance is achieved with Equalization Level 4. For non SAS applications, optimal EQ setting should be determined via simulation and prototype verification.

Table 5. Output Voltage Pin Settings

Channel A Level Channel B Level VOD_SEL VID Vp-p VODx_DB Setting(1) VOD Vp-p
0 0 1.0 0 0.65
1 0 1.0 0 0.70
3 3 R 1.0 0 0.83
5 5 Float 1.0 0 0.91
7 7 1 1.0 0 1.05
(1) The VOD output amplitude is set with the VOD_SEL Pin. For SAS-3 and PCIe operation the VOD_DB level is typically left at 0 dB (SMBus control = 000'b) in order to keep the output dynamic range as large as possible. VOD_DB settings other than 0 dB or 000'b will decrease the output dynamic range and act to limit the output VOD. When operating in Pin Mode in a SAS3 environment it is recommended to use VOD_SEL = 1.

8.5 Programming

The DS125BR111 device supports reading directly from an external EEPROM device by implementing SMBus Master mode. When using the SMBus master mode, the DS125BR111 will read directly from specific location in the external EEPROM. When designing a system for using the external EEPROM, the user needs to follow these specific guidelines.

  • Maximum EEPROM size is 8 kbits (1024 x 8-bit).
  • Set ENSMB = Float — enable the SMBus master mode.
  • The external EEPROM device address byte must be 0xA0 and capable of 1 MHz operation at 2.5 V and 3.3 V supply.
  • Set the AD[3:0] inputs for SMBus address byte. When the AD[3:0] = 0000'b, the device address byte is 0xB0. The VOD_SEL/READEN pin must be tied Low for the AD[3:0] to be active. If this pin is tied High or Floated an address of 0xB0 will be used for the DS125BR111.

When tying multiple DS125BR111 devices to the SDA and SCL bus, use these guidelines to configure the devices.

  • Use SMBus AD[3:0] address bits so that each device can loaded it's configuration from the EEPROM. Example below is for 4 devices. The first device in the sequence must be address 0xB0, subsequent devices must follow the address order listed below.
    • U1: AD[3:0] = 0000 = 0xB0,
    • U2: AD[3:0] = 0001 = 0xB2,
    • U3: AD[3:0] = 0010 = 0xB4,
    • U4: AD[3:0] = 0011 = 0xB6
  • Use a pull-up resistor on SDA and SCL; typical value = 2 kΩ - 5 kΩ
  • Daisy-chain READEN (Pin 17) and DONE (Pin 18) from one device to the next device in the sequence so that they do not compete for the EEPROM at the same time.
    1. Tie READEN of the 1st device in the chain (U1) to GND
    2. Tie DONE of U1 to READEN of U2
    3. Tie DONE of U2 to READEN of U3
    4. Tie DONE of U3 to READEN of U4
    5. Optional: Tie DONE output of U4 to a LED to show the devices have been loaded successfully

Below is an example using the default register values of a 2 kbit (256 x 8-bit) EEPROM in hex format for the DS125BR111 device. The first 3 bytes of the EEPROM always contain a header common and necessary to control initialization of all devices connected to the I2C bus. CRC enable flag to enable/disable CRC checking. If CRC checking is disabled, a fixed pattern (8’hA5) is written/read instead of the CRC byte from the CRC location, to simplify the control. There is a MAP bit to flag the presence of an address map that specifies the configuration data start in the EEPROM. If the MAP bit is not present the configuration data start address is derived from the DS125BR111 address and the configuration data size. A bit to indicate an EEPROM size > 256 bytes is necessary to properly address the EEPROM. There are 37 bytes of data size for each DS125BR111 device.

:2000000000001000000407002FED4002FED4002FAD4002FAD400005F5A8005F5A8005F5A15 :200020008005F5A800005454000000000000000000000000000000000000000000000000F6 :20006000000000000000000000000000000000000000000000000000000000000000000080 :20008000000000000000000000000000000000000000000000000000000000000000000060 :2000A000000000000000000000000000000000000000000000000000000000000000000040 :2000C000000000000000000000000000000000000000000000000000000000000000000020 :2000E000000000000000000000000000000000000000000000000000000000000000000000 :200040000000000000000000000000000000000000000000000000000000000000000000A0

Note: The maximum EEPROM size supported is 8 kbits (1024 x 8 bits).

Note: Default register values. These should be changed as indicated in the datasheet to support PCIe and SAS/SATA

Table 6. EEPROM Register Map - Single Device With SAS Values

EEPROM Address Byte Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 BIt 0
Description 0 CRC EN Address Map Present EEPROM > 256 Bytes RES DEVICE COUNT[3] DEVICE COUNT[2] DEVICE COUNT[1] DEVICE COUNT[0]
Value 00 0 0 0 0 0 0 0 0
Description 1 RES RES RES RES RES RES RES RES
Value 00 0 0 0 0 0 0 0 0
Description 2 Max EEPROM Burst size[7] Max EEPROM Burst size[6] Max EEPROM Burst size[5] Max EEPROM Burst size[4] Max EEPROM Burst size[3] Max EEPROM Burst size[2] Max EEPROM Burst size[1] Max EEPROM Burst size[0]
Value 00 0 0 0 0 0 0 0 0
Description 3 Reserved Reserved Reserved Reserved Reserved Reserved ENABLE_CHB ENABLE_CHA
SMBus Register 0x01 [7] 0x01 [6] 0x01 [5] 0x01 [4] 0x01 [3] 0x01 [2] 0x01 [1] 0x01 [0]
Value 00 0 0 0 0 0 0 0 0
Description 4 Reserved Reserved Reserved Reserved Ovrd_ENABLE Reserved Reserved Reserved
SMBus Register 0x02 [5] 0x02 [4] 0x02 [3] 0x02 [2] 0x02 [0] 0x04 [7] 0x04 [6] 0x04 [5]
Value 00 0 0 0 0 0 0 0 0
Description 5 Reserved Reserved Reserved Reserved Reserved Reserved Ovrd_SD_TH Reserved
SMBus Register 0x04 [4] 0x04 [3] 0x04 [2] 0x04 [1] 0x04 [0] 0x06 [4] 0x08 [6] 0x08 [5]
Value 04 0 0 0 0 0 1 0 0
Description 6 Reserved Ovrd_RX_Detect Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x08 [4] 0x08 [3] 0x08 [2] 0x08 [1] 0x08 [0] 0x0B [6] 0x0B [5] 0x0B [4]
Value 07 0 0 0 0 0 1 1 1
Description 7 rate_delay_3 rate_delay_2 rate_delay_1 rate_delay_0 Reserved Reserved RXDET_A_1 RXDET_A_0
SMBus Register 0x0B [3] 0x0B [2] 0x0B [1] 0x0B [0] 0x0E [5] 0x0E [4] 0x0E [3] 0x0E [2]
Value 00 0 0 0 0 0 0 0 0
Description 8 Reserved Reserved Reserved Reserved Reserved Reserved CHA_EQ_1 CHA_EQ_0
SMBus Register 0x0F [7] 0x0F [6] 0x0F [5] 0x0F [4] 0x0F [3] 0x0F [2] 0x0F [1] 0x0F [0]
Value 2F 0 0 1 0 1 1 1 1
Description 9 CHA_SCP Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x10 [7] 0x10 [6] 0x10 [5] 0x10 [4] 0x10 [3] 0x10 [2] 0x10 [1] 0x10 [0]
Value ED 1 1 1 0 1 1 0 1
Description A CHA_VOD_DB_2 CHA_VOD_DB_1 CHA_VOD_DB_0 Reserved CHA_THa_1 CHA_THa_0 CHA_THd_1 CHA_THd_0
SMBus Register 0x11 [2] 0x11 [1] 0x11 [0] 0x12 [7] 0x12 [3] 0x12 [2] 0x12 [1] 0x12 [0]
Value 40 0 1 0 0 0 0 0 0
Description B Reserved Reserved RXDET_B_1 RXDET_B_0 Reserved Reserved Reserved Reserved
SMBus Register 0x15 [5] 0x15 [4] 0x15 [3] 0x15 [2] 0x16 [7] 0x16 [6] 0x16 [5] 0x16 [4]
Value 02 0 0 0 0 0 0 1 0
Description C Reserved Reserved CHB_EQ_1 CHB_EQ_0 CHB_SCP Reserved Reserved Reserved
SMBus Register 0x16 [3] 0x16 [2] 0x16 [1] 0x16 [0] 0x17 [7] 0x17 [6] 0x17 [5] 0x17 [4]
Value FE 1 1 1 1 1 1 1 0
Description D Reserved Reserved Reserved Reserved CHB_VOD_DB_2 CHB_VOD_DB_1 CHB_VOD_DB_0 Reserved
SMBus Register 0x17 [3] 0x17 [2] 0x17 [1] 0x17 [0] 0x18 [2] 0x18 [1] 0x18 [0] 0x19 [7]
Value D4 1 1 0 1 0 1 0 0
Description E CHB_THa_1 CHB_THa_0 CHB_THd_1 CHB_THd_0 Reserved Reserved Reserved Reserved
SMBus Register 0x19 [3] 0x19 [2] 0x19 [1] 0x19 [0] 0x1C [5] 0x1C [4] 0x1C [3] 0x1C [2]
Value 00 0 0 0 0 0 0 0 0
Description F Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x1D [7] 0x1D [6] 0x1D [5] 0x1D [4] 0x1D [3] 0x1D [2] 0x1D [1] 0x1D [0]
Value 2F 0 0 1 0 1 1 1 1
Description 10 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x1E [7] 0x1E [6] 0x1E [5] 0x1E [4] 0x1E [3] 0x1E [2] 0x1E [1] 0x1E [0]
Value AD 1 0 1 0 1 1 0 1
Description 11 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x1F [2] 0x1F [1] 0x1F [0] 0x20 [7] 0x20 [3] 0x20 [2] 0x20 [1] 0x20 [0]
Value 40 0 1 0 0 0 0 0 0
Description 12 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x23 [5] 0x23 [4] 0x23 [3] 0x23 [2] 0x24 [7] 0x24 [6] 0x24 [5] 0x24 [4]
Value 02 0 0 0 0 0 0 1 0
Description 13 Reserved Reserved Reserved Reserved Reserved Reserved Reserved CHA_VOD_2
SMBus Register 0x24 [3] 0x24 [2] 0x24 [1] 0x24 [0] 0x25 [7] 0x25 [6] 0x25 [5] 0x25 [4]
Value FA 1 1 1 1 1 0 1 0
Description 14 CHA_VOD_1 CHA_VOD_0 Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x25 [3] 0x25 [2] 0x25 [1] 0x25 [0] 0x26 [2] 0x26 [1] 0x26 [0] 0x27 [7]
Value D4 1 1 0 1 0 1 0 0
Description 15 Reserved Reserved Reserved Reserved ovrd_fast_idle hi_idle_th CHA hi_idle_th CHB fast_idle CHA
SMBus Register 0x27 [3] 0x27 [2] 0x27 [1] 0x27 [0] 0x28 [6] 0x28 [5] 0x28 [4] 0x28 [3]
Value 00 0 0 0 0 0 0 0 0
Description 16 fast_idle CHB low_gain CHA low_gain CHB Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x28 [2] 0x28 [1] 0x28 [0] 0x2B [5] 0x2B [4] 0x2B [3] 0x2B [2] 0x2C [7]
Value 00 0 0 0 0 0 0 0 0
Description 17 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x2C [6] 0x2C [5] 0x2C [4] 0x2C [3] 0x2C [2] 0x2C [1] 0x2C [0] 0x2D [7]
Value 5F 0 1 0 1 1 1 1 1
Description 18 Reserved Reserved CHB_VOD_2 CHB_VOD_1 CHB_VOD_0 Reserved Reserved Reserved
SMBus Register 0x2D [6] 0x2D [5] 0x2D [4] 0x2D [3] 0x2D [2] 0x2D [1] 0x2D [0] 0x2E [2]
Value 5A 0 1 0 1 1 0 1 0
Description 19 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x2E [1] 0x2E [0] 0x2F [7] 0x2F [3] 0x2F [2] 0x2F [1] 0x2F [0] 0x32 [5]
Value 80 1 0 0 0 0 0 0 0
Description 1A Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x32 [4] 0x32 [3] 0x32 [2] 0x33 [7] 0x33 [6] 0x33 [5] 0x33 [4] 0x33 [3]
Value 05 0 0 0 0 0 1 0 1
Description 1B Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x33 [2] 0x33 [1] 0x33 [0] 0x34 [7] 0x34 [6] 0x34 [5] 0x34 [4] 0x34 [3]
Value F5 1 1 1 1 0 1 0 1
Description 1C Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x34 [2] 0x34 [1] 0x34 [0] 0x35 [2] 0x35 [1] 0x35 [0] 0x36 [7] 0x36 [3]
Value A8 1 0 1 0 1 0 0 0
Description 1D Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x36 [2] 0x36 [1] 0x36 [0] 0x39 [5] 0x39 [4] 0x39 [3] 0x39 [2] 0x3A [7]
Value 00 0 0 0 0 0 0 0 0
Description 1E Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x3A [6] 0x3A [5] 0x3A [4] 0x3A [3] 0x3A [2] 0x3A [1] 0x3A [0] 0x3B [7]
Value 5F 0 1 0 1 1 1 1 1
Description 1F Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x3B [6] 0x3B [5] 0x3B [4] 0x3B [3] 0x3B [2] 0x3B [1] 0x3B [0] 0x3C [2]
Value 5A 0 1 0 1 1 0 1 0
Description 20 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x3C [1] 0x3C [0] 0x3D [7] 0x3D [3] 0x3D [2] 0x3D [1] 0x3D [0] 0x40 [5]
Value 80 1 0 0 0 0 0 0 0
Description 21 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x40 [4] 0x40 [3] 0x40 [2] 0x41 [7] 0x41 [6] 0x41 [5] 0x41 [4] 0x41 [3]
Value 05 0 0 0 0 0 1 0 1
Description 22 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x41 [2] 0x41 [1] 0x41 [0] 0x42 [7] 0x42 [6] 0x42 [5] 0x42 [4] 0x42 [3]
Value F5 1 1 1 1 0 1 0 1
Description 23 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x42 [2] 0x42 [1] 0x42 [0] 0x43 [2] 0x43 [1] 0x43 [0] 0x44 [7] 0x44 [3]
Value A8 1 0 1 0 1 0 0 0
Description 24 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x44 [2] 0x44 [1] 0x44 [0] 0x47 [3] 0x47 [2] 0x47 [2] 0x47 [0] 0x48 [7]
Value 00 0 0 0 0 0 0 0 0
Description 25 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x48 [6] 0x4C [7] 0x4C [6] 0x4C [5] 0x4C [4] 0x4C [3] 0x4C [0] 0x59 [0]
Value 00 0 0 0 0 0 0 0 0
Description 26 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x5A [7] 0x5A [6] 0x5A [5] 0x5A [4] 0x5A [3] 0x5A [2] 0x5A [1] 0x5A [0]
Value 54 0 1 0 1 0 1 0 0
Description 27 Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved
SMBus Register 0x5B [7] 0x5B [6] 0x5B [5] 0x5B [4] 0x5B [3] 0x5B [2] 0x5B [1] 0x5B [0]
Value 54 0 1 0 1 0 1 0 0

Table 7. Example of EEPROM For Four Devices Using Two Address Maps

EEPROM ADDRESS EEPROM DATA COMMENTS
DECIMAL HEX
0 00 0x43 CRC_EN = 0, Address Map = 1, > 256 bytes = 0, Device Count[3:0] = 3
1 01 0x00
2 02 0x08 EEPROM Burst Size
3 03 0x00 CRC not used
4 04 0x0B Device 0 Address Location
5 05 0x00 CRC not used
6 06 0x0B Device 1 Address Location
7 07 0x00 CRC not used
8 08 0x30 Device 2 Address Location
9 09 0x00 CRC not used
10 0A 0x30 Device 3 Address Location
11 0B 0x00 Begin Device 0, 1 - Address Offset 3
12 0C 0x00
13 0D 0x04
14 0E 0x07
15 0F 0x00
16 10 0x03 EQ CHA = 03
17 11 0xED
18 12 0x00 VOD_DB CHA = 0 (0dB)
19 13 0x00
20 14 0xFE EQ CHB = 03
21 15 0xD0 VOD_DB CHB = 0 (0dB)
22 16 0x00
23 17 0x2F
24 18 0xAD
25 19 0x40
26 1A 0x02
27 1B 0xFB VOD CHA = 1.4 V
28 1C 0xD4 VOD CHA = 1.4 V
29 1D 0x00 Signal Detect Status Threshold Control
30 1E 0x00 Signal Detect status Threshold Control
31 1F 0x5F
32 20 0x7A VOD CHB = 1.4 V
33 21 0x80
34 22 0x05
35 23 0xF5
36 24 0xA8
37 25 0x00
38 26 0x5F
39 27 0x5A
40 28 0x80
41 29 0x05
42 2A 0xF5
43 2B 0xA8
44 2C 0x00
45 2D 0x00
46 2E 0x54
47 2F 0x54 End Device 0, 1 - Address Offset 39
48 30 0x00 Begin Device 2, 3 - Address Offset 3
49 31 0x00
50 32 0x04
51 33 0x07
52 34 0x00
53 35 0x01 EQ CHA = 01
54 36 0xED
55 37 0x00 VOD_DB CHA = 0 (0dB)
56 38 0x00
57 39 0xFE EQ CHB = 03
58 3A 0xD0 VOD_DB CHB1 = 0 (0dB)
59 3B 0x00
60 3C 0x2F
61 3D 0xAD
62 3E 0x40
63 3F 0x02
64 40 0xFB VOD CHA = 1.4 V
65 41 0xD4 VOD CHA = 1.4 V
66 42 0x00 Signal Detect status Threshold Control
67 43 0x00 Signal Detect status Threshold Control
68 44 0x5F
69 45 0x7A VOD CHB = 1.4 V
70 46 0x80
71 47 0x05
72 48 0xF5
73 49 0xA8
74 4A 0x00
75 4B 0x5F
76 4C 0x5A
77 4D 0x80
78 4E 0x05
79 4F 0xF5
80 50 0xA8
81 51 0x00
82 52 0x00
83 53 0x54
84 54 0x54 End Device 2, 3 - Address Offset 39

Note: CRC_EN = 0, Address Map = 1, > 256 byte = 0, Device Count[3:0] = 3. Multiple devices can point to the same address map. Maximum EEPROM size is 8 kbits (1024 x 8-bits). EEPROM must support 1 MHz operation.

8.6 Register Maps

The System Management Bus interface is compatible to SMBus 2.0 physical layer specification. Tie ENSMB = 1 kΩ to VDD (2.5 V mode) or VIN (3.3 V mode) to enable SMBus slave mode and allow access to the configuration registers.

The DS125BR111 has the AD[3:0] inputs in SMBus mode. These pins are the user set SMBus slave address inputs. The AD[3:0] Pins have internal pull-down. Based on the SMBus 2.0 specification, the DS125BR111 has a 7-bit slave address. The LSB is set to 0'b (for a WRITE). When AD[3:0] pins are left floating or pulled low, AD[3:0] = 0000'b, the device default address byte is 0xB0.The device supports up to 16 address byte, which can be set with the AD[3:0] inputs. Below are the 16 addresses. Use the address listed in the Slave Address Byte column to address.

Table 8. Device Slave Address Bytes

AD[3:0] SETTINGS FULL SLAVE ADDRESS BYTE (HEX) 7-BIT SLAVE ADDRESS (HEX)
0000 B0 58
0001 B2 59
0010 B4 5A
0011 B6 5B
0100 B8 5C
0101 BA 5D
0110 BC 5E
0111 BE 5F
1000 C0 60
1001 C2 61
1010 C4 62
1011 C6 63
1100 C8 64
1101 CA 65
1110 CC 66
1111 CE 67

The SDA, SCL Pins are 3.3 V tolerant, but are not 5 V tolerant. External pull-up resistor is required on the SDA line. The resistor value can be from 2 kΩ to 5 kΩ depending on the voltage, loading and speed. The SCL may also require an external pull-up resistor and it depends on the Host that drives the bus.

8.6.1 Transfer Of Data Via The SMBus

During normal operation the data on SDA must be stable during the time when SCL is High.

There are three unique states for the SMBus:

START: A High-to-Low transition on SDA while SCL is High indicates a message START condition.

STOP: A Low-to-High transition on SDA while SCL is High indicates a message STOP condition.

IDLE: If SCL and SDA are both High for a time exceeding tBUF from the last detected STOP condition or if they are High for a total exceeding the maximum specification for tHIGH then the bus transfers to the IDLE state.

8.6.2 SMBus Transactions

The device supports WRITE and READ transactions. See Table 9 for register address, type (Read/Write, Read Only), default value and function information.

8.6.3 Writing a Register

To write a register, the following protocol is used (see SMBus 2.0 specification).

  1. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
  2. The Device (Slave) drives the ACK bit (“0”).
  3. The Host drives the 8-bit Register Address.
  4. The Device drives an ACK bit (“0”).
  5. The Host drive the 8-bit data byte.
  6. The Device drives an ACK bit (“0”).
  7. The Host drives a STOP condition.

The WRITE transaction is completed, the bus goes IDLE and communication with other SMBus devices may now occur.

8.6.4 Reading a Register

To read a register, the following protocol is used (see SMBus 2.0 specification).

  1. The Host drives a START condition, the 7-bit SMBus address, and a “0” indicating a WRITE.
  2. The Device (Slave) drives the ACK bit (“0”).
  3. The Host drives the 8-bit Register Address.
  4. The Device drives an ACK bit (“0”).
  5. The Host drives a START condition.
  6. The Host drives the 7-bit SMBus Address, and a “1” indicating a READ.
  7. The Device drives an ACK bit “0”.
  8. The Device drives the 8-bit data value (register contents).
  9. The Host drives a NACK bit “1” indicating end of the READ transfer.
  10. The Host drives a STOP condition.

The READ transaction is completed, the bus goes IDLE and communication with other SMBus devices may now occur.

8.6.5 SMBus Register Information

Table 9. SMBus Register Map

ADDRESS REGISTER NAME BITS FIELD TYPE DEFAULT EEPROM REG BIT DESCRIPTION
0x00 Device ID 7 Reserved R/W 0x00 Set bit to 0
[6:3] SMBus strap observation
6:3 I2C Address [3:0] R
2 EEPROM reading done R 1 = EEPROM Done Loading
0 = EEPROM Loading
1:0 Reserved RWSC Set bits to 0
0x01 Control 1 7:2 Reserved R/W 0x00 Yes Set bits to 0
1:0 ENABLE A/B [1]: Disable Channel B (1); Normal Operation (0)
[0]: Disable Channel A (1); Normal Operation (0)
Note: Must set ENABLE override in Reg 0x02[0]
0x02 Control 2 7 Override PWDN R/W 0x00 [1]: Override PWDN (1); PWDN pin control (0)
6 PWDN Pin value Override value for PWDN pin
[1]: PWDN - Low Power (1); Normal Operation (0)
Note: Must set PWDN override in Reg 0x02[7]
5:4 Reserved Yes Set bits to 0
3 PWDN Inputs Yes Set bit to 0
2 PWDN Oscillator Yes Set bit to 0
1 Reserved Set bit to 0
0 Override ENABLE Yes 1 = Enables Reg 0x01[1:0]
0 = Normal Operation
0x04 Reserved 7:0 Reserved R/W 0x00 Yes Set bits to 0
0x05 Reserved 7:0 Reserved R/W 0x00 Reserved
0x06 SMBus Control 7:5 Reserved R/W 0x10 Set bits to 0
4 Reserved Yes Set bit to 1
3 Register Mode Enable 1 = Enable SMBus Slave Mode Register Control
0 = Disable Register Control
Note: With register control "Enabled" register updates take immediate effect on high speed data path. When "Disabled", SMBus registers are still R/W, but changes will not be sent to the high speed controls until this register is "Enabled".
2:0 Reserved Set bits to 0
0x07 Digital Reset and Control 7 Reserved R/W 0x01 Set bit to 0
6 Reset Regs RWSC Self clearing reset for registers.
Writing a [1] will return register settings to default values.
5 Reset SMBus Master RWSC Self clearing reset to SMBus master state machine
4:0 Reserved R/W Set bits to 0001'b
0x08 Pin Override 7 Reserved R/W 0x00 Set bit to 0
6 Override SD_TH Threshold Yes 1 = Override by Channel - see Reg 0x12 and 0x19
0 = SD_TH pin control
5:4 Reserved Yes Set bits to 0
3 Override RXDET Yes 1 = Override by Channel - see Reg 0x0E and 0x15
0 = RXDET pin control
2:0 Reserved Yes Set bits to 0
0x0A Signal Detect Status 7:2 Reserved R 0x00
1 Internal Idle B R 1 = LOS (No Signal Present)
0 = Signal present
Note: RES Pin = Float for these bits to function.
0 Internal Idle A
0x0B Reserved 7:0 Reserved R/W 0x70 Yes
0x0C Reserved 7:0 Reserved R/W 0x00 Set bits to 0
0x0E CH A
RXDET Control		 7:5 Reserved R/W 0x00 Set bits to 0
4 Reserved Yes Set bit to 0
3:2 RXDET Yes CHA RXDET register control
00'b = Input is high-z impedance
01'b = Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω
10'b = Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω
11'b = Input is 50 Ω
Note: override RXDET pin in 0x08[3].
Note: Can only be used with the register write sequence described in .PCIe Applications
1:0 Reserved Set bits to 0
0x0F CH A
EQ Control		 7:0 BOOST [7:0] R/W 0x2F Yes EQ Control - total of 4 levels
See Table 4
0x10 CH A
Control		 7 Select Short Circuit Protection R/W 0xED Yes 1 = Short Circuit Protection ON
0 = Short Circuit Protection OFF
6 Reserved Yes Set bit to 0
5:3 Reserved Yes Set bits to 0
2:0 Reserved Yes Set bits to 101'b
0x11 CH A
VOD_DB Control		 7 Reserved R 0x82
6:5 Reserved
4:3 Reserved R/W Set bits to 0
2:0 VOD_DB Control [2:0] Yes OUTA VOD_DB Control (010'b Default). Based on system interoperability testing it is recommended to set these bits to 000'b for SAS, PCIe, and other non-limiting applications.
000'b = 0 dB (Recommended)
001'b = –1.5 dB
010'b = –3.5 dB (default)
011'b = –5 dB
100'b = –6 dB
101'b = –8 dB
110'b = –9 dB
111'b = –12 dB
Note: Changing VOD_DB bits effectively lowers the output VOD gain by a factor of the corresponding amount of dB reduction.
0x12 CH A
SD Threshold		 7 Reserved R/W 0x00 Yes Set bit to 0
6:4 Reserved Set bits to 0
3:2 Signal Detect Status
Tassert		 Yes Assert Thresholds (1010 pattern 12 Gbps)
Use only if register 0x08 [6] = 1
00'b = 50 mV (Default)
01'b = 40 mV
10'b = 75 mV
11'b = 58 mV
Note: Override the SD_TH pin using 0x08[6].
Note: This threshold adjustment is for SD status indication only.
1:0 Signal Detect Status
Tde-assert		 Yes De-assert Thresholds (1010 pattern 12 Gbps)
Use only if register 0x08 [6] = 1
00'b = 37 mV (Default)
01'b = 22 mV
10'b = 55 mV
11'b = 45 mV
Note: Override the SD_TH pin using 0x08[6].
Note: This threshold adjustment is for SD status indication only.
0x13 Reserved 7:2 Reserved R/W 0x00 Set bits to 0
1:0 R
0x14 CH B
7:3 Reserved R/W 0x00 Set bits to 0
2 Signal Detect Reset 1 = Override Signal Detect, hold "Off"
1 Signal Detect Preset 1 = Override Signal Detect, hold "On"
0 Reserved Set bit to 0
0x15 CH B
RXDET Control		 7:5 Reserved R/W 0x00 Set bits to 0
4 Reserved Yes Set bit to 0
3:2 RXDET Yes CHB RXDET register control
00'b = Input is high-z impedance
01'b = Auto RX-Detect, outputs test every 12 ms for 600 ms (50 times) then stops; termination is high-z until detection; once detected input termination is 50 Ω
10'b = Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is high-z until detection; once detected input termination is 50 Ω
11'b = Input is 50 Ω
Note: override RXDET pin in 0x08[3].
Note: Can only be used with the register write sequence described in PCIe Applications .
1:0 Reserved Set bits to 0
0x16 CH B
EQ Control		 7:0 BOOST [7:0] R/W 0x2F Yes EQ Control - total of 4 levels
See Table 4
0x17 CH B
RATE Control		 7 Select Short Circuit Protection R/W 0xED Yes 1 = Short Circuit Protection ON
0 = Short Circuit Protection OFF
6 Reserved Set bit to 0
5:3 Reserved Set bits to 0
2:0 Reserved Set bits to 101'b
0x18 CH B
VOD_DB Control		 7 Reserved R 0x82
6:5 Reserved
4:3 Reserved R/W Set bits to 0
2:0 VOD_DB Control [2:0] Yes OUTB VOD_DB Control (010'b Default). Based on system interoperability testing it is recommended to set these bits to 000'b for SAS, PCIe, and other non-limiting applications.
000'b = 0 dB (Recommended)
001'b = –1.5 dB
010'b = –3.5 dB (default)
011'b = –5 dB
100'b = –6 dB
101'b = –8 dB
110'b = –9 dB
111'b = –12 dB
Note: Changing VOD_DB bits effectively lowers the output VOD gain by a factor of the corresponding amount of dB reduction.
0x19 CH B
SD Threshold		 7 Reserved R/W 0x00 Yes Set bits to 0
6:4 Reserved
3:2 Signal Detect Status
Tassert		 Yes Assert Thresholds (1010 pattern 12 Gbps)
Use only if register 0x08 [6] = 1
00'b = 50 mV (Default)
01'b = 40 mV
10'b = 75 mV
11'b = 58 mV
Note: Override the SD_TH pin using 0x08[6].
Note: This threshold adjustment is for SD status indication only.
1:0 Signal Detect Status
Tde-assert		 Yes De-assert Thresholds (1010 pattern 12 Gbps)
Use only if register 0x08 [6] = 1
00'b = 37 mV (Default)
01'b = 22 mV
10'b = 55 mV
11'b = 45 mV
Note: Override the SD_TH pin using 0x08[6].
Note: This threshold adjustment is for SD status indication only.
0x1C 7:6 Reserved R/W 0x00 Set bits to 0
5:2 Yes
1:0
0x1D 7:0 Reserved R/W 0x2F Yes
0x1E 7:0 Reserved R/W 0xAD Yes
0x1F 7:3 Reserved R/W 0x02
2:0 Yes
0x20 7 Reserved R/W 0x00 Yes
6:4
3:0 Yes
0x23 7:6 Reserved R/W 0x00
5:2 Yes
1:0
0x24 7:0 Reserved R/W 0x2F Yes
0x25 CH A VOD 7:5 Reserved R/W 0xAD Yes Set bits to 101'b
4:2 VOD CHA Control VOD Control CHA: VOD / VID Ratio
000'b = 0.65
001'b = 0.70
010'b = 0.78
011'b = 0.83
100'b = 0.88
101'b = 0.91 (Default)
110'b = 1.00 (Recommended for SAS/SATA/PCIe)
111'b = 1.05 (Recommended for SAS/SATA/PCIe)
1:0 Reserved Set bits to 01'b
0x26 7:6 Reserved R 0x02
4:3 R/W
2:0 Yes
0x27 7 Reserved R/W 0x00 Yes
6:4
3:0 Yes
0x28 Signal Detect Control 7 Reserved R/W 0x00 Set bit to 0
6 Override Fast IDLE Yes Override Fast IDLE
1 = Use value in 0x28[3:2]
0 = Based on MODE pin
5:4 High IDLE Yes Enable higher SD Threshold range
[1]: CH A
[0]: CH B
3:2 Fast IDLE Yes Enable Fast SD response
[1]: CH A
[0]: CH B
1:0 Reduced SD Gain Yes Enable reduced SD Gain
[1]: CH A
[0]: CH B
0x2B 7:6 Reserved R/W 0x00
5:2 Yes
1:0
0x2C 7:0 Reserved R/W 0x2F Yes
0x2D CH B VOD 7:5 Reserved R/W 0xAD Yes Set bits to 101'b
4:2 VOD CHB Control VOD Control CHB: VOD / VID Ratio
000'b = 0.65
001'b = 0.70
010'b = 0.78
011'b = 0.83
100'b = 0.88
101'b = 0.91 (Default)
110'b = 1.00 (Recommended for SAS/SATA/PCIe)
111'b = 1.05 (Recommended for SAS/SATA/PCIe)
1:0 Reserved Set bits to 01'b
0x2E 7:5 Reserved R 0x02
4:3 R/W
2:0 Yes
0x2F 7 Reserved R/W 0x00 Yes
6:4
3:0 Yes
0x32 7:6 Reserved R/W 0x00
5:2 Yes
1:0
0x33 7:0 Reserved R/W 0x2F Yes
0x34 7:0 Reserved R/W 0xAD Yes
0x35 7:5 Reserved R 0x02
4:3 R/W
2:0 Yes
0x36 7 Reserved R/W 0x00 Yes
6:4
3:0 Yes
0x39 7:6 Reserved R/W 0x00
5:2 Yes
1:0
0x3A 7:0 Reserved R/W 0x2F Yes
0x3B 7:0 Reserved R/W 0xAD Yes
0x3C 7:5 Reserved R 0x02
4:3 R/W
2:0 Yes
0x3D 7 Reserved R/W 0x00 Yes
6:4
3:0 Yes
0x40 7:6 Reserved R/W 0x00
5:2 Yes
1:0
0x41 7:0 Reserved R/W 0x2F Yes
0x42 7:0 Reserved R/W 0xAD Yes
0x43 7:5 Reserved R 0x02
4:3 R/W
2:0 Yes
0x44 7 Reserved R/W 0x00 Yes
6:4
3:0 Yes
0x47 7:4 Reserved R/W 0x00
3:0 Yes
0x48 7:6 Reserved R/W 0x05 Yes
5:0
0x4C 7:3 Reserved R/W 0x00 Yes
2:1
0 Yes
0x51 Device Information 7:5 Version R 0x97 100'b
4:0 Device ID 1 0111'b
0x59 7:1 Reserved R/W 0x00
0 Yes
0x5A 7:0 Reserved R/W 0x54 Yes
0x5B 7:0 Reserved R/W 0x54 Yes
Legend:
RWSC: Read / Write / Self Clearing on Read
R/W: Read / Write
R: Read Only

9 Application and Implementation

9.1 Application Information

9.1.1 Signal Integrity

In SAS and PCIe applications, specifications require Rx-Tx link training to establish and optimize signal conditioning settings for data rates up to 12 Gbps. In link training, the Rx partner requests a series of FIR coefficients from the TX partner at speed. This polling sequence is designed to pre-condition the signal path with an optimized link between the endpoints. Link training occurs at the following data-rates:

Table 10. Link Training Data-Rates

PROTOCOL MAXIMUM DATA-RATE (Gbps) ALTERNATIVE DATA RATES (Gbps)
SAS 12.0 6.0, 3.0
PCIe 8.0 5.0, 2.5

The DS125BR111 works to extend the reach possible by using active linear equalization to the channel, boosting attenuated signals so that they can be more easily recovered at the Rx. The repeater outputs are specially designed to be transparent to TX FIR signaling in order to pass information critical for optimal link training to the Rx. Suggested settings for the A-channels and B-channels in a SAS or PCIe environment are given in the table below. Further adjustments to EQ and VOD settings may optimize signal margin on the link for different system applications:

Table 11. Pin Mode Device Settings

CHANNEL SETTINGS PIN MODE
EQx Level 4
VOD_SEL Level 7 (1)
VODx_DB 0 dB (0)

Table 12. SMBus Mode Device Settings

CHANNEL SETTINGS SMBus REGISTER VALUE
EQ 0x03
VOD 110'b or 111'b
VODx_DB 000'b

9.1.2 RX-Detect in SAS/SATA Applications

Unlike PCIe systems, SAS/SATA systems use a low speed Out-Of-Band or OOB communications sequence to detect and communicate between SAS Controllers/Expanders and target drives. This communication eliminates the need to detect for endpoints like PCIe. For SAS systems, it is recommended to tie the RXDET pin high. This will ensure any OOB sequences sent from the Controller/Expander will reach the target drive without any additional latency due to the termination detection sequence defined by PCIe.

9.1.3 PCIe Applications

9.1.3.1 RXDET When Using SMBus Modes

PCIe systems use an input termination polling and detection sequence to begin the PCIe bus configuration process. When using PIN MODE configuration the RXDET pin should be left Floating to allow for this process to begin upon power-up of the DS125BR111 device. If SMBus Slave MODE configuration is required, the SMBus register write sequence in Table 13 should be initiated upon power-up of the DS125BR111.

  • Pin Settings for DS125BR111 in a PCIe Application (SMBus Slave Mode)
    • ENSMB = H
    • RXDET = Float
    • PWDN = System control (Hold HIGH until Register Write process is completed)

Table 13. PCIe RX-Detect Programming Sequence

STEP SMBus
REGISTER ADDRESS		 REGISTER DATA (Hex) COMMENTS
1 0x08 0x08 Give RXDET control to SMBus Registers
2 0x0E 0x04 or 0x08 Channel A:
0x04: Auto RX-Detect, outputs test every 12 ms for 600 ms then stops; termination is Hi-Z until RX detection; once detected input termination is 50 Ω

0x08: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is Hi-Z until RX detection; once detected input termination is 50 Ω

3 0x15 0x04 or 0x08 Channel B:
0x04: Auto RX-Detect, outputs test every 12 ms for 600 ms then stops; termination is Hi-Z until RX detection; once detected input termination is 50 Ω

0x08: Auto RX-Detect, outputs test every 12 ms until detection occurs; termination is Hi-Z until RX detection; once detected input termination is 50 Ω

4 0x06 0x18 Enable SMBus register control.
Register updates in Steps 1-3 are applied to high speed channels.
  • Pin Settings for DS125BR111 in a PCIe Application (SMBus Master Mode - EEPROM Configuration)
    • ENSMB = Float
    • RXDET = Float
    • PWDN = System control (Hold PWDN HIGH until DONE = 0, EEPROM Write process is completed)

The highlighted bits for RXDET in the Table 6 show the equivalent RXDET control locations to the SMBus Register write sequence shown in Table 13.

9.2 Typical Application

SAS-3 specifications have fully specified Rx-Tx training as a means to establish and optimize signal conditioning settings at the 12.0 Gbps data-rate. The DS125BR111 works to extend the reach possible by adding active linear equalization to the channel, boosting attenuated signals so that they can be more easily recovered at the SAS-3 Rx. The outputs are specially designed to be transparent to TX FIR signaling passing this information critical for optimal link training to the SAS-3 Rx. The typical device settings used in most SAS-3 environments are EQ = Level 4, VOD_DB = 0 and VOD_SEL = 1 in Pin mode or EQ = 0x03, VOD = 111'b, and VOD_DB = 000'b in SMBus mode.

The maximum channel attenuation for a single DS125BR111 in a SAS-3 application utilizing link training is -34 dB @ 6 GHz. Other system variables such as crosstalk and channel topology can have an impact on the link extension possible using the DS125BR111.

111sch_sas.gifFigure 9. DS125BR111 Typical Application

9.2.1 Design Requirements

As with any high speed design, there are many factors which influence the overall performance, this section lists some critical areas for consideration and study.

  • Limit the maximum attenuation to -34 dB @ 6 GHz for the entire channel.
  • Utilize 100 Ω impedance traces. Generally these are very loosely coupled to ease routing length differences.
  • Place AC-coupling capacitors near to the receiver end of each channel segment to minimize reflections.
  • The maximum body size for AC-coupling capacitors is 0402.
  • Back-drill connector vias and signal vias to minimize stub length
  • Use Reference plane vias to ensure a low inductance path for the return current.

9.2.2 Detailed Design Procedure

The DS125BR111 is designed to be placed almost anywhere within the channel, maximum channel extension requires the DS125BR111 be placed with attenuation of at least 10 dB on its inputs. The device settings used in a SAS-3 environment are EQ = Level 4, VOD_SEL = 1, and VOD_DB = 0 in Pin mode or EQ = 0x03, VOD = 110'b or 111'b, and VOD_DB = 000'b in SMBus mode. This setting has proven to give the best overall SAS-3 extension for all configurations tested.

9.2.3 Application Curves

5in ds 12g.png
A.
DS125BR111 settings: EQ = 0x01, VOD = 110'b, VOD_DB = 000'b
Figure 10. TLine = 5 Inch 5–Mil FR4 Trace, 12 Gbps

10 Power Supply Recommendations

Two approaches are recommended to ensure that the DS125BR111 is provided with an adequate power supply. First, the supply (VDD) and ground (GND) Pins should be connected to power planes routed on adjacent layers of the printed circuit board. The layer thickness of the dielectric should be minimized so that the VDD and GND planes create a low inductance supply with distributed capacitance. Second, careful attention to supply bypassing through the proper use of bypass capacitors is required. A 0.1 μF bypass capacitor should be connected to each VDD Pin such that the capacitor is placed as close as possible to the DS125BR111. Smaller body size capacitors can help facilitate proper component placement. Additionally, capacitor with capacitance in the range of 1 μF to 10 μF should be incorporated in the power supply bypassing design as well. These capacitors can be either tantalum or an ultra-low ESR ceramic.

The DS125BR111 has an optional internal voltage regulator to provide the 2.5 V supply to the device. In 3.3 V mode operation, the VIN Pin = 3.3 V is used to supply power to the device. The internal regulator will provide the 2.5 V to the VDD Pins of the device and a 0.1 µF cap is needed at each of the 2 VDD Pins for power supply de-coupling (total capacitance should equal 0.2 µF). The VDD_SEL Pin must be tied to GND to enable the internal regulator. In 2.5 V mode operation, the VIN Pin should be left open and 2.5 V supply must be applied to the 2 VDD Pins to power the device. The VDD_SEL Pin must be left open (no connect) to disable the internal regulator.

111power.gifFigure 11. 3.3 V or 2.5 V Supply Connection Diagram

11 Layout

11.1 Layout Guidelines

The DS125BR111 pinout promotes makes for easy high speed routing and layout. To optimize DS125BR111 performance refer to the following guidelines;

  1. Differential pairs going into or out of the DS125BR111 should have adequate pair - pair spacing to minimize crosstalk. Keep a 5x spacing ratio as shown on the Blue pairs in the layout example.
  2. Place local VIN and VDD capacitors as close as possible to the device supply pins to ensure a low inductance layout. Often the best location is directly under the DS125BR111 pins.
  3. Use return current via connections to link reference planes locally. This ensures a low inductance return current path when the differential signal changes layers.
  4. Open up the supply planes around differential vias to better match the trace impedance.
  5. Place GND vias around the DAP perimeter to ensure optimal electrical and thermal performance.
  6. Use 0201 body size coupling capacitors whenever possible, 0402 body size capacitors can also be used if they are placed closer to the Rx on the channel.

11.2 Layout Example

In most cases DS125BR111 layouts will fit neatly into a single or 1-lane application. The example layout shows how to "flip" one of the DS125BR111 channels to produce a 2-channel unidirectional layout.

111layout.gifFigure 12. DS125BR111 Example Unidirectional Layout

12 器件和文档支持

12.1 商标

All other trademarks are the property of their respective owners.

12.2 静电放电警告

esds-image

这些装置包含有限的内置 ESD 保护。 存储或装卸时，应将导线一起截短或将装置放置于导电泡棉中，以防止 MOS 门极遭受静电损伤。

12.3 术语表

SLYZ022 — TI 术语表。

这份术语表列出并解释术语、首字母缩略词和定义。

 
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