LMT85 1.8、SC70/TO-92/TO-92S 模拟温度传感器

Table 1. Available Device Packages

Table 2. Comparable Alternative Devices

8.3.1 LMT85 Transfer Function

The output voltage of the LMT85, across the complete operating temperature range, is shown in Table 3. This table is the reference from which the LMT85 accuracy specifications (listed in the Accuracy Characteristics section) are determined. This table can be used, for example, in a host processor look-up table. A file containing this data is available for download at the LMT85 product folder under Tools and Software Models.

Although the LMT85 is very linear, its response does have a slight umbrella parabolic shape. This shape is very accurately reflected in Table 3. The Transfer Table can be calculated by using the parabolic equation (Equation 1).

Equation 1.

The parabolic equation is an approximation of the transfer table and the accuracy of the equation degrades slightly at the temperature range extremes. Equation 1 can be solved for T resulting in:

Equation 2.

For an even less accurate linear transfer function approximation, a line can easily be calculated over the desired temperature range using values from the Table and a two-point equation (Equation 3):

Equation 3.

where

• V is in mV,
• T is in °C,
• T₁ and V₁ are the coordinates of the lowest temperature,
• and T₂ and V₂ are the coordinates of the highest temperature.

For example, if the user wanted to resolve this equation, over a temperature range of 20°C to 50°C, they would proceed as follows:

Equation 4.

Equation 5.

Equation 6.

Using this method of linear approximation, the transfer function can be approximated for one or more temperature ranges of interest.

8.4.1 Mounting and Thermal Conductivity

The LMT85 can be applied easily in the same way as other integrated-circuit temperature sensors. It can be glued or cemented to a surface.

To ensure good thermal conductivity, the backside of the LMT85 die is directly attached to the GND pin. The temperatures of the lands and traces to the other leads of the LMT85 will also affect the temperature reading.

Alternatively, the LMT85 can be mounted inside a sealed-end metal tube, and can then be dipped into a bath or screwed into a threaded hole in a tank. As with any IC, the LMT85 and accompanying wiring and circuits must be kept insulated and dry, to avoid leakage and corrosion. This is especially true if the circuit may operate at cold temperatures where condensation can occur. If moisture creates a short circuit from the output to ground or V_DD, the output from the LMT85 will not be correct. Printed-circuit coatings are often used to ensure that moisture cannot corrode the leads or circuit traces.

The thermal resistance junction to ambient (R_θJA or θ_JA) is the parameter used to calculate the rise of a device junction temperature due to its power dissipation. Use Equation 7 to calculate the rise in the LMT85 die temperature:

Equation 7.

where

• T_A is the ambient temperature,
• I_S is the supply current,
• I_Lis the load current on the output,
• and V_O is the output voltage.

For example, in an application where T_A = 30°C, V_DD = 5 V, I_S = 5.4 μA, V_OUT = 1324 mV, and I_L = 2 μA, the junction temperature would be 30.014°C, showing a self-heating error of only 0.014°C. Because the junction temperature of the LMT85 is the actual temperature being measured, take care to minimize the load current that the LMT85 is required to drive. Thermal Information shows the thermal resistance of the LMT85.

8.4.2 Output and Noise Considerations

A push-pull output gives the LMT85 the ability to sink and source significant current. This is beneficial when, for example, driving dynamic loads like an input stage on an analog-to-digital converter (ADC). In these applications the source current is required to quickly charge the input capacitor of the ADC. The LMT85 device is ideal for this and other applications which require strong source or sink current.

The LMT85 supply-noise gain (the ratio of the AC signal on V_OUT to the AC signal on V_DD) was measured during bench tests. The typical attenuation is shown in Figure 8 found in the Typical Characteristics. A load capacitor on the output can help to filter noise.

For operation in very noisy environments, some bypass capacitance should be present on the supply within approximately 5 centimeters of the LMT85.

8.4.3 Capacitive Loads

The LMT85 handles capacitive loading well. In an extremely noisy environment, or when driving a switched sampling input on an ADC, it may be necessary to add some filtering to minimize noise coupling. Without any precautions, the LMT85 can drive a capacitive load less than or equal to 1100 pF as shown in Figure 11. For capacitive loads greater than 1100 pF, a series resistor may be required on the output, as shown in Figure 12.

Figure 11. LMT85 No Decoupling Required for Capacitive Loads Less Than 1100 pF

Figure 12. LMT85 with Series Resistor for Capacitive Loading Greater Than 1100 pF

8.4.4 Output Voltage Shift

The LMT85 is very linear over temperature and supply voltage range. Due to the intrinsic behavior of an NMOS/PMOS rail-to-rail buffer, a slight shift in the output can occur when the supply voltage is ramped over the operating range of the device. The location of the shift is determined by the relative levels of V_DD and V_OUT. The shift typically occurs when V_DD- V_OUT = 1 V.

This slight shift (a few millivolts) takes place over a wide change (approximately 200 mV) in V_DD or V_OUT. Because the shift takes place over a wide temperature change of 5°C to 20°C, V_OUT is always monotonic. The accuracy specifications in the Accuracy Characteristics table already include this possible shift.

9.2.1 Connection to an ADC

Figure 13. Suggested Connection to a Sampling Analog-to-Digital Converter Input Stage

9.2.1.3 Application Curve

Figure 14. Analog Output Transfer Function

9.2.2 Conserving Power Dissipation With Shutdown

Figure 15. Simple Shutdown Connection of the LMT85

9.2.2.3 Application Curves

INDENT:

Time: 500 µs/div; Top Trace: V_DD 1 V/div;
Bottom Trace: OUT 1 V/div

Figure 16. Output Turnon Response Time Without a Capacitive Load and V_DD = 3.3 V

INDENT:

Time: 500 µs/div; Top trace: V_DD 1V/div;
Bottom trace: OUT 1 V/div

Figure 18. Output Turnon Response Time With 1.1-nF Capacitive Load and V_DD = 3.3 V

INDENT:

Time: 500 µs/div; Top trace: V_DD 2 V/div;
Bottom trace: OUT 1 V/div

Figure 17. Output Turnon Response Time Without a Capacitive Load and V_DD = 5 V

INDENT:

Time: 500 µs/div; Top trace: V_DD 2 V/div;
Bottom trace: OUT 1 V/div

Figure 19. Output Turnon Response Time With 1.1-nF Capacitive Load and V_DD = 5 V