ZHCSAK3O December 2012 – August 2024 TPD1E05U06 , TPD4E05U06 , TPD6E05U06
PRODUCTION DATA
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TPDxE05U06 是基于单向瞬态电压抑制器 (TVS) 的静电放电 (ESD) 保护二极管产品系列,具有超低电容。每个器件的 ESD 冲击消散值高于 IEC 61000-4-2 国际标准规定的最高水平。TPDxE05U06 超低负载电容特性使得该器件非常适合保护任何高速信号引脚。
TPDxE05U06 的典型应用包括 HDMI 1.4b、HDMI 2.0、USB 3.0、MHL、LVDS、DisplayPort、PCI-Express®、eSata 和 V-by-One® HS 中的高速信号线。
器件型号 | 通道数 | 封装(1) |
---|---|---|
TPD1E05U06 | 单通道 | DPY(X1SON,2) |
DYA(SOD-523,2) | ||
TPD4E05U06 | 4 通道 | DQA(USON,10) |
TPD6E05U06 | 6 通道 | RVZ(USON,14) |
PIN | TYPE(1) | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
GND | 2 | Ground | Ground; Connect to ground |
I/O | 1 | I/O | ESD protected channel(2) |
PIN | TYPE(1) | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
D1+ | 1 | I/O | ESD protected channel(2) |
D1– | 2 | I/O | ESD protected channel(2) |
D2+ | 4 | I/O | ESD protected channel(2) |
D2– | 5 | I/O | ESD protected channel(2) |
GND | 3 | Ground | Ground; Connect to ground |
GND | 8 | ||
NC | 6 | — | Not connected; Used for optional straight-through routing. Can be left floating or grounded |
NC | 7 | ||
NC | 9 | ||
NC | 10 |
PIN | TYPE(1) | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
D1+ | 14 | I/O | ESD protected channel(2) |
D1– | 13 | I/O | ESD protected channel(2) |
D2+ | 12 | I/O | ESD protected channel(2) |
D2– | 11 | I/O | ESD protected channel(2) |
D3+ | 9 | I/O | ESD protected channel(2) |
D3– | 8 | I/O | ESD protected channel(2) |
GND | 5 | Ground | Ground; Connect to ground |
GND | 10 | ||
NC | 1 | — | Not connected; Used for optional straight-through routing. Can be left floating or grounded |
NC | 2 | ||
NC | 3 | ||
NC | 4 | ||
NC | 6 | ||
NC | 7 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Electrical Fast Transient (2) (3) | IEC 61000-4-4 (5/50ns) | 80 | A | |
Peak Pulse (2) (3) | IEC 61000-4-5 Current (8/20us) | 2.5 | A | |
IEC 61000-4-5 Power (8/20us) | 40 | W | ||
TA | Ambient Operating Temperature | -40 | 125 | °C |
Tstg | Storage Temperature | -65 | 155 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge – DPY, DQA, and RVZ | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) | ±4000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101 (2) | ±1500 | V | ||
V(ESD) | Electrostatic discharge – DYA | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 | ±2500 | V |
Charged device model (CDM), per JEDEC specification JS-002 | ±1000 | V |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±12000 | V |
IEC 61000-4-2 air-gap discharge | ±15000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VIO | Input pin voltage | 0 | 5.5 | V | |
TA | Operating free-air temperature | -40 | 125 | °C |
THERMAL METRIC (1) | TPD1E05U06 | TPD4E05U06 | TPD6E05U06 | UNIT | ||
---|---|---|---|---|---|---|
DPY (X1SON) | DYA (SOD523) | DQA (USON) | RVZ (USON) | |||
2 PINS | 2 PINS | 10 PINS | 14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 697.3 | 772.1 | 327 | 197.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 471 | 444.6 | 189.5 | 119.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 575.9 | 540.4 | 257.7 | 92.6 | °C/W |
ΨJT | Junction-to-top characterization parameter | 175.7 | 159.9 | 60.9 | 22 | °C/W |
ΨJB | Junction-to-board characterization parameter | 575.1 | 533.9 | 257 | 91.6 | °C/W |
PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
INPUT - OUTPUT RESISTANCE | ||||||||
VRWM | Reverse stand-off voltage | IIO < 10 µA | 5.5 | V | ||||
VBR | Break-down voltage | IIO = 1 mA | 6.5 | 8.5 | V | |||
VClamp | Clamp voltage | IPP = 1 A, TLP, from I/O to GND (1) | 10 | V | ||||
IPP = 5 A, TLP, from I/O to GND (1) | 14 | |||||||
IPP = 1 A, TLP, from GND to I/O (1) | 3 | |||||||
IPP = 5 A, TLP, from GND to I/O (1) | 7 | |||||||
ILEAK | Leakage current | VIO = 2.5 V | 0.01 | 10 | nA | |||
RDYN | Dynamic resistance | DPY package | I/O to GND (2) | 0.8 | Ω | |||
GND to I/O (2) | 0.8 | |||||||
DYA package | I/O to GND (2) | 0.8 | ||||||
GND to I/O (2) | 0.7 | |||||||
DQA package | I/O to GND (2) | 0.8 | ||||||
GND to I/O (2) | 0.8 | |||||||
RVZ package | I/O to GND (2) | 0.8 | ||||||
GND to I/O (2) | 0.8 | |||||||
CAPACITANCE | ||||||||
CL | Line capacitance (3) | VIO = 2.5 V; ƒ = 1 MHz , I/O to GND | TPD1E05U06 DPY package |
0.42 | pF | |||
TPD1E05U06 DYA package |
0.42 | |||||||
TPD4E05U06 DQA package |
0.5 | |||||||
TPD6E05U06 RVZ package |
0.47 | |||||||
Δ CIO-TO-GND | Variation of input capacitance | GND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, Channel x pin to GND – channel y pin to GND |
0.05 | 0.07 | pF | |||
CCROSS | Channel to channel input capacitance | GND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, between channel pins | 0.01 | 0.06 | pF |
The TPDxE05U06 is a family of unidirectional Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diodes with ultra-low capacitance. Each device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 international standard. The TPDxE05U06 ultra-low loading capacitance makes the device an excellent choice for protecting any high-speed signal pins.