ZHCSOI0 September   2022 UCC21755-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety Limiting Values
    8. 6.8  Electrical Characteristics
    9. 6.9  Switching Characteristics
    10. 6.10 Insulation Characteristics Curves
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay
      1. 7.1.1 Non-Inverting and Inverting Propagation Delay
    2. 7.2 Input Deglitch Filter
    3. 7.3 Active Miller Clamp
      1. 7.3.1 Internal On-Chip Active Miller Clamp
    4. 7.4 Undervoltage Lockout (UVLO)
      1. 7.4.1 VCC UVLO
      2. 7.4.2 VDD UVLO
    5. 7.5 Desaturation (DESAT) Protection
      1. 7.5.1 DESAT Protection with Soft Turn-OFF
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Power Supply
      2. 8.3.2  Driver Stage
      3. 8.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 8.3.4  Active Pulldown
      5. 8.3.5  Short Circuit Clamping
      6. 8.3.6  Internal Active Miller Clamp
      7. 8.3.7  Desaturation (DESAT) Protection
      8. 8.3.8  Soft Turn-Off
      9. 8.3.9  Fault (FLT), Reset and Enable (RST/EN)
      10. 8.3.10 Isolated Analog to PWM Signal Function
    4. 8.4 Device Functional Modes
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Filters for IN+, IN- and RST/EN
        2. 9.2.2.2 PWM Interlock of IN+ and IN-
        3. 9.2.2.3 FLT, RDY, and RST/EN Pin Circuitry
        4. 9.2.2.4 RST/EN Pin Control
        5. 9.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 9.2.2.6 Overcurrent and Short Circuit Protection
        7. 9.2.2.7 Isolated Analog Signal Sensing
          1. 9.2.2.7.1 Isolated Temperature Sensing
          2. 9.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 9.2.2.8 Higher Output Current Using an External Current Buffer
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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6.8 Electrical Characteristics

VCC = 3.3 V or 5.0 V, 1-µF capacitor from VCC to GND, VDD–COM = 20 V, 18 V or 15 V, COM–VEE = 5 V, 8 V or 15 V,
CL = 100pF, –40°C<TJ<150°C (unless otherwise noted)(1)(2).
Parameter TEST CONDITIONS MIN TYP MAX UNIT
VCC UVLO THRESHOLD AND DELAY
VVCC_ON VCC - GND 2.55 2.7 2.85 V
VVCC_OFF 2.35 2.5 2.65 V
VVCC_HYS 0.2 V
tVCCFIL VCC UVLO deglitch time   10   µs
tVCC+ to OUT VCC UVLO on delay to output high IN+ = VCC, IN– = GND 28 37.8 50 µs
tVCC- to OUT VCC UVLO off delay to output low 5 10 15 µs
tVCC+ to RDY VCC UVLO on delay to RDY high RST/EN = VCC 30 37.8 50 µs
tVCC- to RDY VCC UVLO off delay to RDY low 5 10 15 µs
VDD UVLO THRESHOLD AND DELAY
VVDD_ON VDD - COM 10.5 12 12.8 V
VVDD_OFF 9.9 10.7 11.8 V
VVDD_HYS 0.8 V
tVDDFIL VDD UVLO deglitch time 5 µs
tVDD+ to OUT VDD UVLO on delay to output high IN+ = VCC, IN– = GND 2 5 8 µs
tVDD- to OUT VDD UVLO off delay to output low   5 10 µs
tVDD+ to RDY VDD UVLO on delay to RDY high RST/EN = VCC   10 15 µs
tVDD- to RDY VDD UVLO off delay to RDY low   10 15 µs
VCC, VDD QUIESCENT CURRENT
IVCCQ VCC quiescent current OUT(H) = High, fS = 0Hz, AIN=2V 2.5 3 4 mA
OUT(L) = Low, fS = 0Hz, AIN=2V 1.45 2 2.75 mA
IVDDQ VDD quiescent current OUT(H) = High, fS = 0Hz, AIN=2V 3.6 4 5.9 mA
OUT(L) = Low, fS = 0Hz, AIN=2V 3.1 3.7 5.3 mA
LOGIC INPUTS - IN+, IN- and RST/EN
VINH Input high threshold VCC=3.3V   1.85 2.31 V
VINL Input low threshold 0.99 1.52   V
VINHYS Input threshold hysteresis   0.33   V
IIH Input high level input leakage current VIN = VCC 90   uA
IIL Input low level input leakage current VIN = GND   -90 uA
RIND Input pins pull down resistance 55 kΩ
RINU Input pins pull up resistance 55 kΩ
TINFIL IN+, IN– and RST/EN deglitch (ON and OFF) filter time fS = 50kHz 28 40 60 ns
TRSTFIL Deglitch filter time to reset FLT   500 650 800 ns
GATE DRIVER STAGE
IOUTH Peak source current CL = 0.18µF, fS = 1kHz 10 A
IOUTL Peak sink current   10   A
ROUTH(3) Output pull-up resistance IOUTH = -0.1A 2.5 Ω
ROUTL Output pull-down resistance IOUTL = 0.1A 0.3 Ω
VOUTH High level output voltage IOUTH = -0.2A, VDD = 18V 17.5 V
VOUTL Low level output voltage IOUTL= 0.2A   60 mV
ACTIVE PULLDOWN
VOUTPD Output active pull down on OUTL IOUTL(typ) = 0.1×IOUTL(typ),
VDD=OPEN, VEE=COM		 1.5 2.0 2.5 V
INTERNAL ACTIVE MILLER CLAMP
VCLMPTH Miller clamp threshold voltage Reference to VEE 1.5 2.0 2.5 V
VCLMPI Output low clamp voltage ICLMPI = 1A   VEE + 0.5   V
ICLMPI Output low clamp current VCLMPI = 0V, VEE = –2.5V   4.0   A
RCLMPI Miller clamp pull down resistance ICLMPI = 0.2A   0.6   Ω
tDCLMPI Miller clamp ON delay time CL = 1.8nF   15 50 ns
SHORT CIRCUIT CLAMPING
VCLP-OUT(H) VOUTH–VDD OUT = High, IOUT(H) = 500mA, tCLP=10µs 0.9 V
VCLP-OUT(L) VOUTL–VDD OUT = High, IOUT(L) = 500mA, tCLP=10µs 1.8 V
VCLP-CLMPI VCLMPI-VDD OUT = High, ICLMPI= 20mA, tCLP=10µs 1.0 V
DESAT PROTECTION
ICHG Blanking capacitor charge current VDESAT = 2.0V 430 500 570 µA
IDCHG Blanking capacitor discharge current VDESAT = 6.0V 10.0 15.0   mA
VDESAT Detection threshold 4.6 5 5.47 V
tDESATLEB Leading edge blank time 150 200 450 ns
tDESATFIL DESAT deglitch filter 50 140 230 ns
tDESATOFF DESAT propagation delay to OUTL 90% 150 200 300 ns
tDESATFLT
DESAT to FLT low delay		 400 580 750 ns
INTERNAL SOFT TURN OFF
ISTO Soft turn-off current on fault condition VDD-VEE = 20 V, OUTL = 8 V 250 400 570 mA
ISOLATED TEMPERATURE SENSE AND MONITOR (AIN–APWM)
VAIN Analog sensing voltage range 0.6   4.5 V
IAIN Internal current source VAIN=2.5V, -40°C< TJ< 150°C 196 203 209 uA
fAPWM APWM output frequency VAIN=2.5V 380 400 420 kHz
BWAIN AIN-APWM Bandwidth   10   kHz
DAPWM APWM Duty Cycle VAIN=0.6V 86.5 88 89.5 %
VAIN=2.5V 48.5 50 51.5 %
VAIN=4.5V 7.5 10 11.5 %
FLT AND RDY REPORTING
tRDYHLD VDD UVLO RDY low minimum holding time 0.55 1 ms
tFLTMUTE Output mute time on fault Reset fault through RST/EN 0.55 1 ms
RODON Open drain output on resistance IODON = 5mA 30 Ω
VODL Open drain low output voltage   0.3 V
COMMON MODE TRANSIENT IMMUNITY
CMTI Common-mode transient immunity 150     V/ns
(1) Currents are positive into and negative out of the specified terminal.
(2)
All voltages are referenced to COM unless otherwise notified.


(3) For internal PMOS only.  Refer to Driver Stage for effective pull-up resistance.