ZHCSOI0 September   2022 UCC21755-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety Limiting Values
    8. 6.8  Electrical Characteristics
    9. 6.9  Switching Characteristics
    10. 6.10 Insulation Characteristics Curves
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay
      1. 7.1.1 Non-Inverting and Inverting Propagation Delay
    2. 7.2 Input Deglitch Filter
    3. 7.3 Active Miller Clamp
      1. 7.3.1 Internal On-Chip Active Miller Clamp
    4. 7.4 Undervoltage Lockout (UVLO)
      1. 7.4.1 VCC UVLO
      2. 7.4.2 VDD UVLO
    5. 7.5 Desaturation (DESAT) Protection
      1. 7.5.1 DESAT Protection with Soft Turn-OFF
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Power Supply
      2. 8.3.2  Driver Stage
      3. 8.3.3  VCC and VDD Undervoltage Lockout (UVLO)
      4. 8.3.4  Active Pulldown
      5. 8.3.5  Short Circuit Clamping
      6. 8.3.6  Internal Active Miller Clamp
      7. 8.3.7  Desaturation (DESAT) Protection
      8. 8.3.8  Soft Turn-Off
      9. 8.3.9  Fault (FLT), Reset and Enable (RST/EN)
      10. 8.3.10 Isolated Analog to PWM Signal Function
    4. 8.4 Device Functional Modes
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Filters for IN+, IN- and RST/EN
        2. 9.2.2.2 PWM Interlock of IN+ and IN-
        3. 9.2.2.3 FLT, RDY, and RST/EN Pin Circuitry
        4. 9.2.2.4 RST/EN Pin Control
        5. 9.2.2.5 Turn-On and Turn-Off Gate Resistors
        6. 9.2.2.6 Overcurrent and Short Circuit Protection
        7. 9.2.2.7 Isolated Analog Signal Sensing
          1. 9.2.2.7.1 Isolated Temperature Sensing
          2. 9.2.2.7.2 Isolated DC Bus Voltage Sensing
        8. 9.2.2.8 Higher Output Current Using an External Current Buffer
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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6.7 Safety Limiting Values

Safety limiting(1) intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheatthe die and damage the isolation barrier, potentially leading to secondary system failures.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IS Safety input, output, or supply current RθJA = 68.3°C/W, VDD = 15 V, VEE = -5V, TJ = 150°C, TA = 25°C 61 mA
RθJA = 68.3°C/W, VDD = 20 V, VEE = -5V, TJ = 150°C, TA = 25°C 49
PS Safety input, output, or total power RθJA = 68.3°C/W, VDD = 20 V, VEE = -5V, TJ = 150°C, TA = 25°C 1220 mW
TS Maximum safety temperature 150 °C
(1) The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ , specified for the device. The IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS should not be exceeded. These limits vary with the ambient temperature, TA. The junction-to-air thermal resistance, RqJA, in the Thermal Information table is that of a device installed on a high-K test board for leaded surface-mount packages. Use these equations to calculate the value for each parameter: TJ = TA + RqJA ´ P, where P is the power dissipated in the device. TJ(max) = TS = TA + RqJA ´ PS, where TJ(max) is the maximum allowed junction temperature. PS = IS ´ VI , where VI is the maximum supply voltage.