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  • TPS785-Q1 具有高精度和使能功能的汽车类 1A、高 PSRR 低压差稳压器

    • ZHCSN73B January   2021  – January 2022 TPS785-Q1

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  • TPS785-Q1 具有高精度和使能功能的汽车类 1A、高 PSRR 低压差稳压器
  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Foldback Current Limit
      2. 7.3.2 Output Enable
      3. 7.3.3 Active Discharge
      4. 7.3.4 Undervoltage Lockout (UVLO) Operation
      5. 7.3.5 Dropout Voltage
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Functional Mode Comparison
      2. 7.4.2 Normal Operation
      3. 7.4.3 Dropout Operation
      4. 7.4.4 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Recommended Capacitor Types
      2. 8.1.2 Input and Output Capacitor Requirements
      3. 8.1.3 Adjustable Device Feedback Resistors
      4. 8.1.4 Load Transient Response
      5. 8.1.5 Exiting Dropout
      6. 8.1.6 Dropout Voltage
      7. 8.1.7 Reverse Current
      8. 8.1.8 Feed-Forward Capacitor (CFF)
      9. 8.1.9 Power Dissipation (PD)
        1. 8.1.9.1 Estimating Junction Temperature
        2. 8.1.9.2 Recommended Area for Continuous Operation
        3. 8.1.9.3 Power Dissipation versus Ambient Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Additional Layout Considerations
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 接收文档更新通知
    4. 11.4 支持资源
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 术语表
  12. 12Mechanical, Packaging, and Orderable Information
  13. 重要声明

封装选项

机械数据 (封装 | 引脚)
  • DRB|8
    • MPDS118K
  • KVU|5
    • MPSF019
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  • DRB|8
    • QFND619
  • KVU|5
    • QFND405
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TPS785-Q1 具有高精度和使能功能的汽车类 1A、高 PSRR 低压差稳压器

本资源的原文使用英文撰写。 为方便起见，TI 提供了译文；由于翻译过程中可能使用了自动化工具，TI 不保证译文的准确性。 为确认准确性，请务必访问 ti.com 参考最新的英文版本（控制文档）。

1 特性

  • 符合面向汽车应用的 AEC-Q100 标准：
    • 温度等级 1：–40°C 至 +125°C，TA
  • 器件结温：–40°C 至 +150°C，TJ
  • 输入电压范围：1.7V 至 6.0V
  • 可提供以下输出电压：
    • 可调节选项：1.2V 至 5.5V
    • 固定选项：0.65V 至 5.0V
  • 输出精度：典型值为 0.5%，最大值为 1.7%
  • 低 IQ：25μA（典型值）
  • 超低压降：
    • 1A 电流时为 315mV（最大值）(3.3VOUT)
  • 内部软启动时间为 550μs，可降低浪涌电流
  • 有源输出放电
  • 封装：
    • 3mm × 3mm 可湿性侧面 VSON (8) 封装
    • 5 引脚 TO-252，RθJA = 31.6°C/W

2 应用

  • 汽车音响主机
  • 混合仪表组
  • 远程信息处理控制单元
  • 中距离和短距离雷达
  • 直流/直流转换器

3 说明

TPS785-Q1 超低压降稳压器 (LDO) 是一款小型低静态电流 LDO，可提供 1A 电流，具有出色的线路和负载瞬态性能。

凭借低输出噪声和出色的 PSRR 性能，此器件适用于功耗敏感型模拟负载。TPS785-Q1 具有 1.7V 至 6.0V 的输入电压范围和 1.2V 至 5.5V 的可调节输出电压范围，是一款灵活的后置稳压器件。它还提供 0.65V 至 5.0V 的固定输出电压，为常用电压轨供电。

TPS785-Q1 具有折返电流限制，可在过流条件下降低功率耗散。EN 端输入有助于满足该系统的电源时序要求。内部软启动通过控制启动过程来降低浪涌电流，从而减小使用的输入电容。

TPS785-Q1 提供了有源下拉电路，当被禁用时可以使输出负载快速放电。

器件信息(1)
器件型号 封装 封装尺寸（标称值）
TPS785-Q1 可湿性侧面 VSON (8) 3.00mm × 3.00mm
TO-252 (5) 6.10mm × 6.60mm
(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。

GUID-20201209-CA0I-X7Z1-DDMJ-00CJWBCXSJ0W-low.gif典型应用电路

4 Revision History

Changes from May 7, 2021 to January 11, 2022 (from Revision A (April 2021) to Revision B (January 2022))

  • 向文档添加了 DRB 封装 B 版本 (VSON)Go
  • Added B version of DRB package (VSON) to the Pin Configuration and Functions sectionGo
  • Reworded the VIN conditions to have more clarity on what 1.65 V or whichever is greater applies to.Go
  • Added line item for 1.2 V ≤ VOUT < 1.5 V dropout voltage in the DRB package. Go
  • Changed Device Nomenclature tableGo

Changes from Revision * (January 2021) to Revision A (April 2021)

  • 将文档状态从预告信息更改为量产数据Go

5 Pin Configuration and Functions

GUID-C32BD759-2557-4108-948E-A38CE01CB709-low.gifFigure 5-1 DRB Package (Fixed),8-Pin VSON(Top View)
Figure 5-3 DRB Package (Fixed) B Version,8-Pin VSON(Top View)
Figure 5-5 KVU Package (Fixed),5-Pin TO-252(Top View)
GUID-1504D833-D6BA-4384-BCBE-3825F640C4DE-low.gifFigure 5-2 DRB Package (Adjustable),8-Pin VSON(Top View)
Figure 5-4 DRB Package (Adjustable) B Version,8-Pin VSON(Top View)
Figure 5-6 KVU Package (Adjustable),5-Pin TO-252(Top View)
Table 5-1 Pin Functions
PIN I/O DESCRIPTION
NAME DRB (Fixed) DRB (Adjustable) DRB (Fixed) B Version DRB (Adjustable) B Version KVU (Fixed) KVU (Adjustable)
EN 7 7 6 6 1 1 Input Enable pin. Driving this pin to logic high enables the device; driving this pin to logic low disables the device. Do not float this pin. If not used, connect EN to IN.
FB — 2 — 2 — 5 Input Feedback pin. Input to the control-loop error amplifier. This pin is used to set the output voltage of the device with the use of external resistors. Do not float this pin. For adjustable-voltage version devices only.
GND 5 5 5 5 3 3 — Ground pin. This pin must be connected to ground on the board.
IN 8 8 8 8 2 2 Input Input pin. For best performance, place the nominal recommended value or larger ceramic capacitor from IN to GND; see the Recommended Operating Conditions table. Place the input capacitor as close to the input of the device as possible.
NC 2, 3, 4, 6 3, 4, 6 2, 3, 4, 7 3, 4, 7 5 — — No connect pin. This pin is not internally connected. Connect to ground for best thermal performance or leave floating.
OUT 1 1 1 1 4 4 Output A 0.47-µF or greater effective capacitance is required from OUT to ground for stability. For best transient response, use a 1-µF or larger ceramic capacitor from OUT to ground. Place the output capacitor as close to output of the device as possible; see the Recommended Operating Conditions table.
Thermal Pad Pad Pad Pad Pad Pad Pad — The thermal pad is electrically connected to the GND pin. Connect the thermal pad to a large-area GND plane for improved thermal performance.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply, VIN –0.3 6.5 V
Enable, VEN –0.3 6.5 V
Output, VOUT –0.3 VIN + 0.3(2) V
Feedback, VFB –0.3 2 V
Current Output, IOUT Internally limited
Temperature Operating junction, TJ –40 150 °C
Storage, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The absolute maximum rating is VIN + 0.3 V or 6.5 V, whichever is smaller.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 ±500
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input voltage 1.7 6.0 V
VOUT Output voltage Adjustable output 1.2 5.5 V
Fixed output 0.65 5.0
CIN Input capacitor 0.1 1 µF
COUT Output capacitor 1(1) 200 µF
CFF Feed-forward capacitor(2) 0 10 100 nF
IOUT Output current 0 1 A
COUT,ESR Output capacitor ESR 0.001 1 Ω
VEN Enable voltage 0 6 V
FEN Enable toggle frequency 10 kHz
TJ Junction temperature –40 150 °C
(1) The minimum effective capacitance is 0.47 µF.
(2) Feed-forward capacitor is optional and not required for stability. 

6.4 Thermal Information

THERMAL METRIC(1) TPS785-Q1 UNIT
DRB (VSON) KVU (TO-252)
8 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 59.5 31.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 67 40.4 °C/W
RθJB Junction-to-board thermal resistance 31.4 10.4 °C/W
ψJT Junction-to-top characterization parameter 3.5 4.6 °C/W
ψJB Junction-to-board characterization parameter 31.3 10.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 15.7 3.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

at operating temperature range (TJ = –40°C to +150°C), VIN = VOUT(nom) + 0.75 V or 2.0  V (whichever is greater), IOUT =
1 mA, VEN = VIN, and CIN = COUT = 1 µF, unless otherwise noted. All typical values at TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage 1.7 6.0 V
VOUT Output voltage Adjustable output 1.2 5.5 V
Fixed output 0.65 5.0
VOUT Output accuracy(5) (1) 1 mA ≤ IOUT ≤ 1 A,
VOUT(nom) + 0.75 V or 2.0 V (whichever is greater) ≤ VIN ≤ 6.0 V 		 TJ = 25°C –0.5 0.5 %
–40°C ≤ TJ  ≤ 85°C –1 1
–40°C ≤ TJ  ≤ 150°C –1.7 1.7
VOUT Line regulation VOUT(nom) + 0.75 V or 2.0  V (whichever is greater) ≤ VIN ≤ 6.0 V 0.3 mV
VOUT Load regulation 0.1 mA ≤ IOUT ≤ 1 A –40°C ≤ TJ  ≤ 85°C –7.5 7.5 mV
0.1 mA ≤ IOUT ≤ 1 A,
–40°C ≤ TJ  ≤ 150°C		 VOUT ≤ 3.3 V –7.5 15
VOUT > 3.3 V –7.5 20
ΔVOUT Load transient response settling time(2) (3) tR = tF = 1 µs, COUT = 10 µF IOUT = 300 mA to
700 mA		 10 µs
Load transient response overshoot, undershoot (3) (6) IOUT = 300 mA to
700 mA		 –2% %VOUT
IOUT = 700 mA to
300 mA		 10% %VOUT
IOUT = 0 mA to
1000 mA		 –10% %VOUT
IGND Ground current IOUT = 0 mA
VOUT(nom) + 0.5 V or 2.0 V (whichever is greater) ≤ VIN ≤ 6.0 V		 TJ = 25°C 15 25 33 µA
–40°C ≤ TJ  ≤ 85°C 35 µA
–40°C ≤ TJ  ≤ 150°C 40 µA
IOUT = 500 µA
VOUT(nom) + 0.5 V or 2.0 V (whichever is greater) ≤ VIN ≤ 6.0 V		 TJ = 25°C 33 44 µA
–40°C ≤ TJ  ≤ 85°C 47 µA
–40°C ≤ TJ  ≤ 150°C 50 µA
IOUT = 100 µA
VOUT(nom) + 0.5 V or 2.0 V (whichever is greater) ≤ VIN ≤ 6.0 V		 –40°C ≤ TJ  ≤ 85°C 45 µA
ISHDN Shutdown current VEN ≤ 0.3 V
VOUT(nom) + 0.5 V or 2.0 V (whichever is greater) ≤ VIN ≤ 6.0 V		 TJ = 25°C 0.01 0.05 µA
–40°C ≤ TJ  ≤ 85°C 0.25
–40°C ≤ TJ  ≤ 150°C 3
VFB Feedback voltage Adjustable output only 1.182 1.2 1.218 V
IFB Feedback pin current Adjustable output only –0.05 0.01 0.05 µA
ICL Output current limit VIN = VOUT(nom) + 1.25 V or 2.0 V (whichever is greater),
VOUT = 0.9 x VOUT(nom) (4) 		1.04 1.65 A
ISC Short-circuit current limit VOUT = 0 V 550 mA
VDO Dropout voltage (DRB package) IOUT = 1 A,
VOUT = 0.95 x VOUT(nom) 		0.65 V ≤ VOUT < 0.8 V 1130 mV
0.8 V ≤ VOUT < 1.0 V 960
1.0 V ≤ VOUT < 1.2 V 800
1.2 V ≤ VOUT < 1.5 V 725
1.5 V ≤ VOUT < 1.8 V 500
1.8 V ≤ VOUT < 2.5 V 425
2.5 V ≤ VOUT < 3.3 V 350
3.3 V ≤ VOUT ≤ 5.5 V 315
Dropout voltage (KVU package) IOUT = 1 A,
VOUT = 0.95 x VOUT(nom) 		0.65 V ≤ VOUT < 0.8 V 1225
0.8 V ≤ VOUT < 1.0 V 1070
1.0 V ≤ VOUT < 1.2 V 915
1.2 V ≤ VOUT < 1.5 V 755
1.5 V ≤ VOUT < 1.8 V 605
1.8 V ≤ VOUT < 2.5 V 540
2.5 V ≤ VOUT < 3.3 V 455
3.3 V ≤ VOUT ≤ 5.5 V 425
IOUT = 850 mA,
VOUT = 0.95 x VOUT(nom) 		VOUT = 1.8 V 500
IOUT = 500 mA,
VOUT = 0.95 x VOUT(nom) 		VOUT = 1.2 V 500
PSRR Power-supply rejection ratio IOUT =  1 A, VIN =
VOUT + 1 V		 f = 1 kHz 60 dB
f = 100 kHz 45
f = 1 MHz 30
Vn Output noise voltage BW = 10 Hz to 100 kHz, VOUT = 1.2 V 30 µVRMS
VUVLO UVLO threshold VIN rising 1.28 1.42 1.62 V
VIN falling 1.17 1.29 1.42
VUVLO(HYST) UVLO hysteresis VIN hysteresis 130 mV
tSTR Start-up time From EN low-to-high transition to VOUT = VOUT(nom) x 92% 280 550 785 µs
VEN(HI) EN pin logic high voltage 0.9 V
VEN(LOW) EN pin logic low voltage 0.3
IEN Enable pin current VIN = VEN = 6.0 V 10 nA
RPULLDOWN Pulldown resistance VIN = 3.3 V 100 Ω
TSD(shutdown) Thermal shutdown temperature Shutdown, temperature increasing 170 °C
TSD(reset) Thermal shutdown reset temperature Reset, temperature decreasing 155
(1) Resistor tolerance is not included in overall accuracy in the adjustable version.
(2) The settling time is measured from when IOUT is stepped from 300 mA to 700 mA to when the output voltage recovers to VOUT =
VOUT(nom) - 5 mV.
(3) This specification is verified by design.
(4) The output is being forced to 90% of the nominal VOUT value.
(5) Based on ambient temperature power dissipation should be limited to avoid thermal shutdown.
(6) This specification is in relation to the change from the nominal output voltage (VOUT(nom)).

6.6 Typical Characteristics

at operating temperature TJ = 25°C, IOUT = 1 mA, VEN = 1.0 V, CIN = 1.0 µF, COUT = 1.0 µF, and VIN = VOUT(NOM) + 0.75 V or 1.7 V (whichever is greater), unless otherwise noted; typical values are at TJ = 25°C

GUID-5172BB20-7BFE-49BB-82CE-D545067F92F2-low.gif
VOUT = 3.3 V
Figure 6-1 Output Accuracy vs VIN
GUID-20210319-CA0I-SGRV-QRTL-WVHDXMZ9SP3V-low.gif
IOUT = 50 mA, VOUT = 1.2 V
Figure 6-3 Output Accuracy vs VIN
GUID-20210317-CA0I-C04S-SVJZ-0S8SGSGCVMXC-low.gif
VOUT = 1.2 V
Figure 6-5 Output Accuracy vs Output Current
GUID-20210324-CA0I-GDPM-PQPB-Z1SL3BVFPKBN-low.gif
IOUT = 500 µA
Figure 6-7 IGND vs VIN
GUID-20210317-CA0I-JVBN-ZH5H-XKCXWRKZ4LD3-low.gif
VOUT = 1.2 V, VIN = 2 V
Figure 6-9 IGND vs IOUT
GUID-20210317-CA0I-LCKG-WZ8M-TSDLKXL8DDDX-low.gif
IOUT = 50 mA
Figure 6-11 50-mA Ground Current vs Temperature
GUID-C2BF8265-16EF-4B40-B7C0-E771DF898890-low.gif
VEN = 0.3 V
Figure 6-13 Pulldown Resistor (RPulldown) vs VIN
GUID-C3C27628-2C81-40C4-B770-567464192077-low.gif
VIN = 6 V
 
Figure 6-15 VEN(HI) and VEN(LOW) Thresholds vs Temperature
GUID-20210317-CA0I-JDPC-P1ZW-3JRTVFKDMB4J-low.gif
VOUT = 3.3 V, IOUT = 300 mA, slew rate = 1 V/µs
Figure 6-17 Line Transient vs Temperature
GUID-20210317-CA0I-NHM8-JXSC-4CTDW29GCDCR-low.gif
VOUT = 3.3 V, IOUT = 500 mA, slew rate = 1 V/µs
Figure 6-19 Line Transient vs Temperature
GUID-20210317-CA0I-FKS9-TTFL-67KPJ9JHB1VV-low.gif
VOUT = 3.3 V, IOUT = 0 mA to 100 mA, rise time = 1 µs
Figure 6-21 Load Transient vs Temperature
GUID-20210319-CA0I-MG92-BS1H-BTD92KQLZ92Z-low.gif
VOUT = 3.3 V, IOUT = 1 A
Figure 6-23 Noise vs CFF
GUID-20210319-CA0I-CCVG-FM0G-RHQ5PKVCRTGD-low.gif
VOUT = 3.3 V, IOUT = 1 A
Figure 6-25 PSRR vs VIN
GUID-20210319-CA0I-TMMF-NN7J-BZHZGCPG1QMC-low.gif
VOUT = 3.3 V
Figure 6-27 PSRR vs IOUT
GUID-DDE1B7E7-D021-4AAA-913E-45DC151B44B8-low.gif
VIN = VEN = 5.5 V, CIN = 0 µF, COUT = 1 µF, VOUT = 1.2 V,
IOUT = 50 mA, TA = -40°C
Figure 6-29 Start Up
GUID-ED732293-FB8A-4BC2-9499-06F6D18F00ED-low.gif
VIN = VEN = 5.5 V, CIN = 0 µF, COUT = 1 µF, VOUT = 1.2 V,
IOUT = 50 mA, TA = 150°C
Figure 6-31 Start Up
GUID-4819613C-B785-4B4D-B9E4-98C38E636AC3-low.gif
VIN = 5.5 V, CIN = 0 µF, COUT = 4.7 µF, VOUT = 5.0 V,
IOUT = 0 mA
Figure 6-33 Start-Up Inrush Current With
COUT = 4.7 µF
GUID-1B83AA0B-8E73-4E4E-83B4-D2AC26636180-low.gif
VOUT = 5.0 V
Figure 6-2 Output Accuracy vs VIN
GUID-20210317-CA0I-PQVG-ZS4T-BDFL0XPZH3VN-low.gif
VOUT = 1.2 V
Figure 6-4 Output Accuracy vs Temperature
GUID-20210317-CA0I-JJWV-NTVL-2G5MD4DJCFTJ-low.gif
IOUT = 1 A
Figure 6-6 Dropout vs Output Voltage
GUID-20210317-CA0I-VCFH-DSJZ-MF1QFXNHRWQG-low.gif
 
Figure 6-8 IGND vs IOUT
GUID-C572C232-7133-4F57-8BFC-9736F7A19CDB-low.gif
IOUT = 500 µA
Figure 6-10 500-µA Ground Current vs Temperature
GUID-F5A24EF0-7463-42E9-A275-80B4B7CC02E5-low.gif
VEN = 0.3 V
Figure 6-12 ISHDN vs VIN
GUID-0DC48CB2-764A-49B2-AC6B-DCB3B3B7E541-low.gif
VIN = 2 V
 
Figure 6-14 VEN(HI) and VEN(LOW) Thresholds vs Temperature
GUID-01964126-9270-4424-B3B0-E4B1E59C7E1C-low.gif
VOUT = 3.3 V, IOUT = 1 mA, slew rate = 1 V/µs
Figure 6-16 Line Transient
GUID-20210317-CA0I-3SMW-VTSB-9C6ZTTDVVNBX-low.gif
VOUT = 3.3 V, IOUT = 1 A, slew rate = 1 V/µs
Figure 6-18 Line Transient vs Temperature
GUID-20210317-CA0I-TF7L-K6D6-FRFRGK62MV7J-low.gif
VOUT = 3.3 V, IOUT = 300 mA to 700 mA, rise time = 1 µs
Figure 6-20 Load Transient vs Temperature
GUID-20210317-CA0I-85P4-GBD9-1GKKFQTWVBCQ-low.gif
VOUT = 3.3 V, IOUT = 0 mA to 1 A, rise time = 1 µs
 
Figure 6-22 Load Transient vs Temperature
GUID-20210319-CA0I-H72S-6HV8-RVP4DXFK9MFQ-low.gif
IOUT = 1 A
Figure 6-24 Noise vs VOUT
GUID-20210319-CA0I-HBJD-DZMQ-9P6LKXVVCHR6-low.gif
VOUT = 3.3 V, IOUT = 1 A
Figure 6-26 PSRR vs COUT
GUID-EB86EF38-0471-43B8-B414-D5AA56164D2C-low.gif
VIN = 5.5 V, CIN = 0 µF, COUT = 1 µF, VOUT = 5.0 V,
IOUT = 0 mA
Figure 6-28 Start-Up Inrush Current With
COUT = 1 µF
GUID-9B0A8F31-09CF-415B-A5FA-171ED54D21BF-low.gif
VIN = VEN = 5.5 V, CIN = 0 µF, COUT = 1 µF, VOUT = 1.2 V,
IOUT = 50 mA, TA = 25°C
Figure 6-30 Start Up
GUID-E01271F0-683F-4590-A423-C3221A70C476-low.gif
VIN = VEN = 5.5 V, CIN = 0 µF, COUT = 1 µF, VOUT = 5.0 V,
IOUT = 0 mA
Figure 6-32 Start-Up Inrush Current With
COUT = 1 µF
GUID-90D92E3A-2C60-40C5-B92C-79D2C619FDE7-low.gif
COUT denotes nominal capacitor size
(not effective capacitance)
Figure 6-34 ESR vs COUT

 
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