ZHCSN51J june   2007  – april 2023 TPS74901

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: Other Orderable Devices (non-M3 Suffix)
    6. 6.6  Electrical Characteristics: Orderable Device (M3 Suffix)
    7. 6.7  Typical Characteristics: IOUT = 50 mA (All Other Orderable Devices, Non-M3 Suffix)
    8. 6.8  Typical Characteristics: IOUT = 1 A (All Other Orderable Devices, Non-M3 Suffix)
    9. 6.9  Typical Characteristics: IOUT = 50 mA (M3 Suffix)
    10. 6.10 Typical Characteristics: IOUT = 1 A (M3 Suffix)
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable and Shutdown
      2. 7.3.2 Power-Good
      3. 7.3.3 Internal Current Limit
      4. 7.3.4 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input, Output, and BIAS Capacitor Requirements
      2. 8.1.2 Transient Response
      3. 8.1.3 Dropout Voltage
      4. 8.1.4 Output Noise
      5. 8.1.5 Programmable Soft-Start
      6. 8.1.6 Sequencing Requirements
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Power Dissipation
        2. 8.4.1.2 Thermal Considerations
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Evaluation Modules
        2. 9.1.1.2 Spice Models
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 接收文档更新通知
    4. 9.4 支持资源
    5. 9.5 Trademarks
    6. 9.6 静电放电警告
    7. 9.7 术语表
  10. 10Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

6.5 Electrical Characteristics: Other Orderable Devices (non-M3 Suffix)

at VEN = 1.1 V, VIN = VOUT + 0.3 V, CBIAS = 0.1 μF, CIN = COUT = 10 μF, CNR = 1 nF, IOUT = 50 mA, VBIAS = 5.0 V, and TJ = –40°C to 125°C, (unless otherwise noted); typical values are at TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VREF Internal reference (Adj.) TA = +25°C 0.798 0.802 0.806 V
ΔVOUT(ΔVIN) Output voltage range VIN = 5 V, IOUT = 3 A VREF 3.6 V
Accuracy
(RGW & SON packages)(1)		 VOUT + 2.2 V ≤ VBIAS ≤ 5.5 V, 50 mA ≤ IOUT ≤ 3 A –2 ±0.5 2 %
Accuracy
(KTW package)(1)		 VOUT + 2.4 V ≤ VBIAS ≤ 5.5 V, 50 mA ≤ IOUT ≤ 3 A –2 ±0.5 2 %
ΔVOUT(ΔIOUT) Line regulation VOUT(nom) + 0.3 ≤ VIN ≤ 5.5 V 0.03 %/V
VOUT Load regulation 50 mA ≤ IOUT ≤ 3 A 0.09 %/A
VDO VIN dropout voltage(2) IOUT = 3 A, VBIAS – VOUT(nom) ≥ 3.25 V(3) 120 280 mV
VBIAS dropout voltage(2) IOUT = 3 A, VIN = VBIAS 1.31 1.75 V
ICL Current limit VOUT = 80% × VOUT(nom), RGW Package 3.9 4.6 5.5 A
VOUT = 80% × VOUT(nom), KTW Package 3.8 4.6 5.5 A
IBIAS BIAS pin current 1 2 mA
ISHDN Shutdown supply current (IGND) VEN ≤ 0.4 V 1 50 µA
IFB Feedback pin current –1 0.15 1 µA
PSRR Power-supply rejection (VIN to VOUT) 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 60 dB
300 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 30 dB
Power-supply rejection (VBIAS to VOUT) 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 50 dB
300 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 30 dB
Vn Output noise voltage BW = 100 Hz to 100 kHz, IOUT = 3 A, CSS = 1 nF 25 × VOUT μVrms
tSTR Minimum start-up time RLOAD for IOUT = 1.0 A, CSS = open 200 µs
ISS Soft-start charging current VSS = 0.4 V 440 nA
VEN(hi) Enable input high level 1.1 5.5 V
VEN(lo) Enable input low level 0 0.4 V
VEN(hys) Enable pin hysteresis 50 mV
VEN(dg) Enable pin deglitch time 20 µs
IEN Enable pin current VEN = 5 V 0.1 1 µA
VIT PG trip threshold VOUT decreasing 85 90 94 %VOUT
VHYS PG trip hysteresis 3 %VOUT
VPG(lo) PG output low voltage IPG = 1 mA (sinking), VOUT < VIT 0.3 V
IPG(lkg) PG leakage current VPG = 5.25 V, VOUT > VIT 0.1 1 µA
TJ Operating junction temperature –40 125 ℃
TSD Thermal shutdown temperature Shutdown, temperature increasing 165 ℃
Reset, temperature decreasing 140
(1) Adjustable devices tested at 0.8 V; resistor tolerance is not taken into account.
(2) Dropout is defined as the voltage from VIN to VOUT when VOUT is 3% below nominal.
(3) 3.25 V is a test condition of this device and can be adjusted by referring to Figure 6-6.