SLVS875C January 2009 – November 2014 TPS54332
PRODUCTION DATA.
As EMI becomes a rising concern in more and more applications, the internal design of the TPS54332 takes measures to reduce the EMI. The high-side MOSFET gate-drive is designed to reduce the PH pin voltage ringing. The internal IC rails are isolated to decrease the noise sensitivity. A package bond wire scheme is used to lower the parasitics effects.
To achieve the best EMI performance, external component selection and board layout are equally important. Follow the to prevent potential EMI issues.