SLVS875C January   2009  – November 2014 TPS54332

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
      2.      Efficiency
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 Handling Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics: Characterization Curves
    8. 6.8 Typical Characteristics: Supplemental Application Curves
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Fixed Frequency PWM Control
      2. 7.3.2  Voltage Reference (Vref)
      3. 7.3.3  Bootstrap Voltage (BOOT)
      4. 7.3.4  Enable and Adjustable Input Undervoltage Lockout (VIN UVLO)
      5. 7.3.5  Programmable Slow-Start Using SS Pin
      6. 7.3.6  Error Amplifier
      7. 7.3.7  Slope Compensation
      8. 7.3.8  Current Mode Compensation Design
      9. 7.3.9  Overcurrent Protection and Frequency Shift
      10. 7.3.10 Overvoltage Transient Protection
      11. 7.3.11 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation With VIN < 3.5 V
      2. 7.4.2 Operation With EN Control
      3. 7.4.3 Eco-Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Switching Frequency
        2. 8.2.2.2  Output Voltage Set Point
        3. 8.2.2.3  Input Capacitors
        4. 8.2.2.4  Output Filter Components
        5. 8.2.2.5  Inductor Selection
        6. 8.2.2.6  Capacitor Selection
        7. 8.2.2.7  Compensation Components
        8. 8.2.2.8  Bootstrap Capacitor
        9. 8.2.2.9  Catch Diode
        10. 8.2.2.10 Output Voltage Limitations
        11. 8.2.2.11 Power Dissipation Estimate
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Estimated Circuit Area
    4. 10.4 Electromagnetic Interference (EMI) Considerations
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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10.4 Electromagnetic Interference (EMI) Considerations

As EMI becomes a rising concern in more and more applications, the internal design of the TPS54332 takes measures to reduce the EMI. The high-side MOSFET gate-drive is designed to reduce the PH pin voltage ringing. The internal IC rails are isolated to decrease the noise sensitivity. A package bond wire scheme is used to lower the parasitics effects.

To achieve the best EMI performance, external component selection and board layout are equally important. Follow the to prevent potential EMI issues.