ZHCSO18A december   2022  – june 2023 TPS281C30

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 SNS Timing Characteristics
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Device Functional Modes
      1. 9.3.1 Working Mode
    4. 9.4 Feature Description
      1. 9.4.1 Accurate Current Sense
        1. 9.4.1.1 High Accuracy Sense Mode
      2. 9.4.2 Programmable Current Limit
        1. 9.4.2.1 Short-Circuit and Overload Protection
        2. 9.4.2.2 Capacitive Charging
      3. 9.4.3 Inductive-Load Switching-Off Clamp
      4. 9.4.4 Inductive Load Demagnetization
      5. 9.4.5 Full Protections and Diagnostics
        1. 9.4.5.1 Open-Load Detection
        2. 9.4.5.2 Thermal Protection Behavior
        3. 9.4.5.3 Undervoltage Lockout (UVLO) Protection
        4. 9.4.5.4 Overvoltage (OVP) Protection
        5. 9.4.5.5 Reverse Polarity Protection
        6. 9.4.5.6 Protection for MCU I/Os
        7. 9.4.5.7 Diagnostic Enable Function
        8. 9.4.5.8 Loss of Ground
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 IEC 61000-4-5 Surge
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Selecting RILIM
        2. 10.2.2.2 Selecting RSNS
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
        1. 10.4.1.1 EMC Considerations
      2. 10.4.2 Layout Example
        1. 10.4.2.1 PWP Layout without a GND Network
        2. 10.4.2.2 PWP Layout with a GND Network
        3. 10.4.2.3 RGW Layout with a GND Network
      3. 10.4.3 Thermal Considerations
  12. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information

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7.8 Switching Characteristics

VS = 24 V, TJ = -40 °C to +125 °C (unless otherwise noted), COUT = 22 nF
Parameter Test Conditions Min Typ Max
Unit
tDR Turnon delay time (from standby) VS = 24 V, RL = 48 Ω 50% of EN to 20% of VOUT 35 55 µs
tDR Turnon delay time (from delay or diagnostic) VS = 24 V, RL = 48 Ω 50% of EN to 20% of VOUT 25 45 µs
tDF Turnoff delay time VS = 24 V, RL = 48 Ω 50% of EN to 80% of VOUT 20 35 50 µs
SRR VOUT rising slew rate VS = 24 V, 20% to 80% of VOUT,
RL = 48 Ω		 0.4 0.7 0.95 V/µs
SRF VOUT falling slew rate VS = 24 V, 80% to 20% of VOUT,
RL = 48 Ω		 0.4 0.8 1.2 V/µs
fmax Maximum PWM frequency 1 kHz
tON Turnon time VS = 24 V, RL = 48 Ω  50% of EN to 80% of VOUT 55 75 µs
tOFF Turnoff time VS = 24 V, RL = 48 Ω  50% of EN to 20% of VOUT 60 70 µs
tON - tOFF Turnon and off matching 1ms ON time switch enable pulse Vs = 24 V, RL = 48 Ω –25 45 µs
tON_pw Minimum VOUT ON pulse width 100-µs ON  time switch enable pulse, VOUT @80% of VS, VS = 24 V, RL = 48 Ω, F = fmax 50 85 µs
ΔPWM PWM accuracy - average load current 200-µs enable pulse, VS = 24 V, RL = 48 Ω 
F = fmax		 -15 15 %
EON Switching energy losses during turnon VS = 24 V, RL = 8 Ω, 1 ms pulse, VOUT from 20% to 80% of VS voltage 0.5 mJ
EOFF Switching energy losses during turnoff VS = 24 V, RL = 8 Ω, 1 ms pulse, VOUT from 20% to 80% of VS voltage 0.25 mJ