ZHCSO18A december   2022  – june 2023 TPS281C30

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 SNS Timing Characteristics
    8. 7.8 Switching Characteristics
    9. 7.9 Typical Characteristics
  9. 8 Parameter Measurement Information
  10. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Device Functional Modes
      1. 9.3.1 Working Mode
    4. 9.4 Feature Description
      1. 9.4.1 Accurate Current Sense
        1. 9.4.1.1 High Accuracy Sense Mode
      2. 9.4.2 Programmable Current Limit
        1. 9.4.2.1 Short-Circuit and Overload Protection
        2. 9.4.2.2 Capacitive Charging
      3. 9.4.3 Inductive-Load Switching-Off Clamp
      4. 9.4.4 Inductive Load Demagnetization
      5. 9.4.5 Full Protections and Diagnostics
        1. 9.4.5.1 Open-Load Detection
        2. 9.4.5.2 Thermal Protection Behavior
        3. 9.4.5.3 Undervoltage Lockout (UVLO) Protection
        4. 9.4.5.4 Overvoltage (OVP) Protection
        5. 9.4.5.5 Reverse Polarity Protection
        6. 9.4.5.6 Protection for MCU I/Os
        7. 9.4.5.7 Diagnostic Enable Function
        8. 9.4.5.8 Loss of Ground
  11. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 IEC 61000-4-5 Surge
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Selecting RILIM
        2. 10.2.2.2 Selecting RSNS
    3. 10.3 Power Supply Recommendations
    4. 10.4 Layout
      1. 10.4.1 Layout Guidelines
        1. 10.4.1.1 EMC Considerations
      2. 10.4.2 Layout Example
        1. 10.4.2.1 PWP Layout without a GND Network
        2. 10.4.2.2 PWP Layout with a GND Network
        3. 10.4.2.3 RGW Layout with a GND Network
      3. 10.4.3 Thermal Considerations
  12. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 静电放电警告
    5. 11.5 术语表
  13. 12Mechanical, Packaging, and Orderable Information

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9.4.5.2 Thermal Protection Behavior

The thermal protection behavior can be split up into 2 categories of events that can happen. Thermal behavior shows each of these categories.

  1. Relative thermal shutdown: The device is enabled into an over current event. The DIAG_EN pin is high so that diagnostics can be monitored on SNS and FLT. The output current rises up to the IILIM level and the FLT goes low while the SNS goes to VSNSFH. With this large amount of current going through the junction temperature of the FET increases rapidly with respect to the controller temperature. When the power FET temperature rises TREL amount above the controller junction temperature ΔT = TFET – TCON > TREL, the device shuts down. The faults are continually shown on SNS and FLT and the part waits for the tRETRY timer to expire. When tRETRY timer expires, since EN is still high, the device will come back on into this IILIM condition.
  2. Absolute thermal shutdown: In this case, the ambient temperature is now much higher than previous. The device is still enabled in an over current event with DIAG_EN high. However, in this case the junction temperature rises up and hits an absolute reference temperature, TABS, and then shuts down. The device will not recover until both TJ < TABS – Thys and the tRETRY timer has expired.
GUID-20211001-SS0I-1NVW-LTFJ-SXKFDWCCV5G5-low.svgFigure 9-16 Thermal Behavior