ZHCSP75A July   2022  – December 2022 TPS1HC30-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 建议运行条件
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Accurate Current Sense
      2. 8.3.2 Programmable Current Limit
        1. 8.3.2.1 Capacitive Charging
      3. 8.3.3 Inductive-Load Switching-Off Clamp
      4. 8.3.4 Full Protections and Diagnostics
        1. 8.3.4.1  Short-Circuit and Overload Protection
        2. 8.3.4.2  Open-Load and Short-to-Battery Detection
        3. 8.3.4.3  Short-to-Battery Detection
        4. 8.3.4.4  Reverse-Polarity and Battery Protection
        5. 8.3.4.5  Latch-Off Mode
        6. 8.3.4.6  Thermal Protection Behavior
        7. 8.3.4.7  UVLO Protection
        8. 8.3.4.8  Loss of GND Protection
        9. 8.3.4.9  Loss of Power Supply Protection
        10. 8.3.4.10 Reverse Current Protection
        11. 8.3.4.11 Protection for MCU I/Os
      5. 8.3.5 Diagnostic Enable Function
    4. 8.4 Device Functional Modes
      1. 8.4.1 Working Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Dynamically Changing Current Limit
        2. 9.2.2.2 EMC Transient Disturbances Test
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Thermal Considerations
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 接收文档更新通知
    3. 10.3 支持资源
    4. 10.4 Trademarks
    5. 10.5 静电放电警告
    6. 10.6 术语表
  11. 11Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.2.2.2 EMC Transient Disturbances Test

Due to the severe electrical conditions in the automotive environment, immunity capacity against electrical transient disturbances is required, especially for a high side power switch, which is connected directly to the battery. Detailed test requirements are in accordance with the ISO 7637-2:2011 and ISO 16750-2:2010 standards. The TPS1HC30-Q1 device is tested and certificated by a third-party organization.

Table 9-2 ISO 7637-2:2011(E) in 12-V System(1)(2)(3)(4)
Test ItemTest Pulse Severity Level and vs AccordinglyPulse Duration (td)Minimum Number of Pulses or Test TimeBurst-Cycle Pulse-Repetition TimeInput Resistance (Ω)Function Performance Status Classification
LevelVs/VMINMAX
1III–1122 ms500 pulses0.5 s—10Status II
2aIII5550 µs500 pulses0.2 s5 s2Status II
2bIV100.2 to 2 s10 pulses0.5 s5 s0 to 0.05Status II
3aIV–2200.1 µs1 h90 ms100 ms50Status II
3bIV1500.1 µs1 h90 ms100 ms50Status II
(1) Tested both under input low condition and high condition.
(2) The pulse 2-A voltage is 54-V maximum from VBB with respect to ground. A voltage suppressing mechanism must be used to pass Level III. This test was run with an 2-μF capacitor from VBB to ground.
(3) GND pin network is a 1-kΩ resistor in parallel with a diode BAS21-7-F.
(4) Status II: The function does not perform as designed during the test, but returns automatically to normal operation after the test.
Table 9-3 ISO 16750-2:2010(E) Load Dump Test B in 12-V System(1)(2)(3)(4)(5)
Test ItemTest Pulse Severity Level and vs AccordinglyPulse Duration (td)Minimum Number of Pulses or Test TimeBurst-Cycle Pulse-Repetition TimeInput Resistance (Ω)Function Performance Status Classification
Level Vs/V
Test B3540 to 400 ms5 pulses60 s0.5 to 4Status II
(1) Tested both under input low condition and high condition (DIAG_EN, EN, and VBB are all classified as inputs).
(2) Considering the worst test condition, the device is tested without any filter capacitors on VBB and VOUT.
(3) The GND pin network is a 1-kΩ resistor in parallel with a diode BAS21-7-F.
(4) Status II: The function does not perform as designed during the test, but returns automatically to normal operation after the test.
(5) Select a 36-V external suppressor.