ZHCSN54A May   2021  – December 2021 TPD1E01B04-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings—AEC Specification
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 ESD Ratings—ISO Specification
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Thermal Information
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  IEC 61000-4-2 ESD Protection
      2. 7.3.2  IEC 61000-4-4 EFT Protection
      3. 7.3.3  IEC 61000-4-5 Surge Protection
      4. 7.3.4  IO Capacitance
      5. 7.3.5  DC Breakdown Voltage
      6. 7.3.6  Ultra Low Leakage Current
      7. 7.3.7  Low ESD Clamping Voltage
      8. 7.3.8  Supports High Speed Interfaces
      9. 7.3.9  Industrial Temperature Range
      10. 7.3.10 Easy Flow-Through Routing Package
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 术语表
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DPY|2
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.7 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO < 10 nA –3.6 3.6 V
VBRF Breakdown voltage, IO pin to GND Measured as the maximum voltage before device snaps back into VHOLD voltage 6.4 V
VBRR Breakdown voltage, GND to IO pin –6.4 V
VHOLD Holding voltage IIO = 1 mA, TA = 25°C 5 5.9 6.5 V
VCLAMP Clamping voltage IPP = 1 A, TLP, from IO to GND 7 V
IPP = 5 A, TLP, from IO to GND 9.2
IPP = 16 A, TLP, from IO to GND 15
IPP = 1 A, TLP, from GND to IO 7
IPP = 5 A, TLP, from GND to IO 9.2
IPP = 16 A, TLP, from GND to IO 15
ILEAK Leakage current, IO to GND VIO = ±2.5 V 10 nA
RDYN Dynamic resistance IO to GND 0.57 Ω
GND to IO 0.57
CL Line capacitance VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C 0.2 0.23 pF