ZHCSQ93B March   2022  – December 2023 TMUX7236

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Source or Drain Continuous Current
    6. 5.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 5.7  ±15 V Dual Supply: Switching Characteristics 
    8. 5.8  ±20 V Dual Supply: Electrical Characteristics
    9. 5.9  ±20 V Dual Supply: Switching Characteristics
    10. 5.10 44 V Single Supply: Electrical Characteristics 
    11. 5.11 44 V Single Supply: Switching Characteristics 
    12. 5.12 12 V Single Supply: Electrical Characteristics 
    13. 5.13 12 V Single Supply: Switching Characteristics 
    14. 5.14 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  Transition Time
    5. 6.5  tON(EN) and tOFF(EN)
    6. 6.6  Break-Before-Make
    7. 6.7  tON (VDD) Time
    8. 6.8  Propagation Delay
    9. 6.9  Charge Injection
    10. 6.10 Off Isolation
    11. 6.11 Crosstalk
    12. 6.12 Bandwidth
    13. 6.13 THD + Noise
    14. 6.14 Power Supply Rejection Ratio (PSRR)
  8. 7 Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Feature Description
      1. 7.2.1 Bidirectional Operation
      2. 7.2.2 Rail to Rail Operation
      3. 7.2.3 1.8 V Logic Compatible Inputs
      4. 7.2.4 Integrated Pull-Down Resistor on Logic Pins
      5. 7.2.5 Fail-Safe Logic
      6. 7.2.6 Latch-Up Immune
      7. 7.2.7 Ultra-Low Charge Injection
    3. 7.3 Device Functional Modes
    4. 7.4 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
        1. 8.2.3.1 On-Resistance Mismatch Between Channels
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 术语表
    6. 9.6 静电放电警告
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • PW|16
  • RUM|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.2.7 Ultra-Low Charge Injection

Figure 7-1 shows how the TMUX7236 device has a transmission gate topology. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.

GUID-79C04B8D-A1FD-4B44-8722-5109D084C87E-low.gif Figure 7-1 Transmission Gate Topology

The TMUX7236 contains specialized architecture to reduce charge injection on the Drain (Dx). To further reduce charge injection in a sensitive application, a compensation capacitor (Cp) can be added on the Source (Sx). This will push excess charge from the switch transition into the compensation capacitor on the Source (Sx) instead of the Drain (Dx). As a general rule, Cp should be 20x larger than the equivalent load capacitance on the Drain (Dx). Figure 7-2 shows charge injection variation with different compensation capacitors on the Source side. Figure 7-2 was captured on the TMUX7219 as part of the TMUX72xx family with a 100 pF load capacitance.

GUID-20210729-CA0I-KVFJ-6WNR-N65GRJM9PQW1-low.svg Figure 7-2 Charge Injection Compensation