SLOS081M February   1977  – December 2021 TL081 , TL081A , TL081B , TL081H , TL082 , TL082A , TL082B , TL082H , TL084 , TL084A , TL084B , TL084H

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings: TL08xH
    2. 6.2  Absolute Maximum Ratings: All Other Devices
    3. 6.3  ESD Ratings: TL08xH
    4. 6.4  ESD Ratings: All Other Devices
    5. 6.5  Recommended Operating Conditions: TL08xH
    6. 6.6  Recommended Operating Conditions: All Other Devices
    7. 6.7  Thermal Information for Single Channel: TL081H
    8. 6.8  Thermal Information for Dual Channel: TL082H
    9. 6.9  Thermal Information for Quad Channel: TL084H
    10. 6.10 Thermal Information: All Other Devices
    11. 6.11 Electrical Characteristics: TL08xH
    12. 6.12 Electrical Characteristics for TL08xC, TL08xxC, and TL08xI
    13. 6.13 Electrical Characteristics for TL08xM and TL084x
    14. 6.14 Switching Characteristics
    15. 6.15 Dissipation Rating Table
    16. 6.16 Typical Characteristics: TL08xH
    17. 6.17 Typical Characteristics: All Other Devices
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Total Harmonic Distortion
      2. 8.3.2 Slew Rate
    4. 8.4 Device Functional Modes
  9. Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Inverting Amplifier Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
    3. 9.3 System Examples
      1. 9.3.1 General Applications
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|14
  • DYY|14
  • PW|14
散热焊盘机械数据 (封装 | 引脚)
订购信息

Electrical Characteristics for TL08xC, TL08xxC, and TL08xI

VCC± = ±15 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA(1) TL081C, TL082C, TL084C TL081AC, TL082AC, TL084AC TL081BC, TL082BC, TL084BC TL081I, TL082I, TL084I UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
VIO Input offset voltage VO = 0,
RS = 50 Ω
25°C 3 15 3 6 2 3 3 6 mV
Full range 20 7.5 5 9
αVIO Temperature
coefficient of input
offset voltage
VO = 0,
RS = 50 Ω
Full range 18 18 18 18 μV/°C
IIO Input offset
current(2)
VO = 0 25°C 5 200 5 100 5 100 5 100 pA
Full range 2 2 2 10 nA
IIB Input bias
current(2)
VO = 0 25°C 30 400 30 200 30 200 30 200 pA
Full range 10 7 7 20 nA
VICR Common-mode
input voltage range
25°C ±11 –12
to
15
±11 –12
to
15
±11 –12
to
15
±11 –12
to
15
V
VOM Maximum peak
output voltage
swing
RL = 10 kΩ 25°C ±12 ±13.5 ±12 ±13.5 ±12 ±13.5 ±12 ±13.5 V
RL ≥ 10 kΩ Full range ±12 ±12 ±12 ±12
RL ≥ 2 kΩ ±10 ±12 ±10 ±12 ±10 ±12 ±10 ±12
AVD Large-signal
differential voltage amplification
VO = ±10 V,
RL ≥ 2 kΩ
25°C 25 200 50 200 50 200 50 200 V/mV
Full range 15 15 25 25
B1 Unity-gain
bandwidth
25°C 3 3 3 3 MHz
ri Input resistance 25°C 1012 1012 1012 1012
CMRR Common-mode
rejection ratio
VIC = VICRmin,
VO = 0,
RS = 50 Ω
25°C 70 86 75 86 75 86 75 86 dB
kSVR Supply-voltage
rejection ratio
(ΔVCC±/ΔVIO)
VCC = ±15 V to
±9 V,
VO = 0,
RS = 50 Ω
25°C 70 86 80 86 80 86 80 86 dB
ICC Supply current
(each amplifier)
VO = 0,
No load
25°C 1.4 2.8 1.4 2.8 1.4 2.8 1.4 2.8 mA
VO1/VO2 Crosstalk
attenuation
AVD = 100 25°C 120 120 120 120 dB
All characteristics are measured under open-loop conditions with zero common-mode voltage, unless otherwise specified. Full range for TA is 0°C to 70°C for TL08_C, TL08_AC, TL08_BC and –40°C to 85°C for TL08_I.
Input bias currents of an FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive, as shown in Figure 6-52. Pulse techniques must be used that maintain the junction temperature as close to the ambient temperature as possible.