ZHCSPE2A December   2021  – February 2022 SN74HCS573-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     4
    2.     5
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Characteristics
    7.     15
    8. 6.7 Switching Characteristics
    9. 6.8 Operating Characteristics
    10. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced CMOS 3-State Outputs
      2. 8.3.2 CMOS Schmitt-Trigger Inputs
      3. 8.3.3 Clamp Diode Structure
      4. 8.3.4 Wettable Flanks
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Power Considerations
        2. 9.2.1.2 Input Considerations
        3. 9.2.1.3 Output Considerations
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1)
HBM ESD Classification Level 2		 ±4000 V
Charged device model (CDM), per AEC Q100-011
CDM ESD Classification Level C4B		 ±1500
(1) AEC Q100-002 indicate that HBM stressing shall be in accordrance with the ANSI/ESDA/JEDEC JS-001 specification.