ZHCSFW4A November   2015  – December 2016 SN65MLVD204B

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics
    6. 6.6  Electrical Characteristics - Driver
    7. 6.7  Electrical Characteristics - Receiver
    8. 6.8  Electrical Characteristics - BUS Input and Output
    9. 6.9  Switching Characteristics - Driver
    10. 6.10 Switching Characteristics - Receiver
    11. 6.11 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-On-Reset
      2. 8.3.2 ESD Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation with VCC < 1.5 V
      2. 8.4.2 Operations with 1.5 V ≤ VCC < 3 V
      3. 8.4.3 Operation with 3 V ≤ VCC < 3.6 V
      4. 8.4.4 Device Function Tables
      5. 8.4.5 Equivalent Input and Output Schematic Diagrams
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Multipoint Communications
      2. 9.2.2 Design Requirements
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1  Supply Voltage
        2. 9.2.3.2  Supply Bypass Capacitance
        3. 9.2.3.3  Driver Input Voltage
        4. 9.2.3.4  Driver Output Voltage
        5. 9.2.3.5  Termination Resistors
        6. 9.2.3.6  Receiver Input Signal
        7. 9.2.3.7  Receiver Input Threshold (Failsafe)
        8. 9.2.3.8  Receiver Output Signal
        9. 9.2.3.9  Interconnecting Media
        10. 9.2.3.10 PCB Transmission Lines
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Microstrip vs. Stripline Topologies
      2. 11.1.2 Dielectric Type and Board Construction
      3. 11.1.3 Recommended Stack Layout
      4. 11.1.4 Separation Between Traces
      5. 11.1.5 Crosstalk and Ground Bounce Minimization
      6. 11.1.6 Decoupling
    2. 11.2 Layout Example
  12. 12器件和文档支持
    1. 12.1 接收文档更新通知
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage range, VCC(2) –0.5 4 V
Input voltage range D, DE, RE –0.5 4 V
A, B (200B, 204B) –1.8 4 V
A, B (202B, 205B) –4 6
Output voltage range R –0.3 4 V
A, B, Y or Z –1.8 4 V
Continuous power dissipation See the Thermal Information table
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Contact discharge, per IEC 61000-4-2 A, B, Y and Z ±8000 V
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins A, B, Y and Z ±8000
All pins except A, B, Y and Z ±4000
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins All pins ±1500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage 3 3.3 3.6 V
VIH High-level input voltage 2 VCC V
VIL Low-level input voltage GND 0.8 V
Voltage at any bus terminal VA, VB, VY or VZ –1.4 3.8 V
|VID| Magnitude of differential input voltage VCC V
RL Differential load resistance 30 50 Ω
1/tUI Signaling rate 100 Mbps
TA Operating free-air temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) SN65MLVD200B
SN65MLVD204B		 SN65MLVD202B
SN65MLVD205B		 UNIT
D (SOIC) D (SOIC)
8 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 112.2 87.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56.7 46.6
RθJB Junction-to-board thermal resistance 52.8 42
ψJT Junction-to-top characterization parameter 10.3 11.3
ψJB Junction-to-board characterization parameter 52.3 71.7
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating conditions (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ICC Supply current Driver only RE and DE at VCC, RL = 50 Ω, All others open 13 22 mA
Both disabled RE at VCC, DE at 0 V, RL = No Load, All others open 1 4
Both enabled RE at 0 V, DE at VCC, RL = 50 Ω, All others open 16 24
Receiver only RE at 0 V, DE at 0 V, All others open 4 13
PD Device power dissipation RL = 50 Ω, Input to D is a 50-MHz 50% duty cycle square wave, DE = high, RE = low, TA = 85°C 100 mW
(1) All typical values are at 25°C and with a 3.3-V supply voltage.

6.6 Electrical Characteristics – Driver

over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN(1) TYP(2) MAX UNIT
|VAB| or
|VYZ|		 Differential output voltage magnitude (4) See Figure 3 480 650 mV
Δ|VAB| or
Δ|VYZ|		 Change in differential output voltage magnitude between logic states –50 50 mV
VOS(SS) Steady-state common-mode output voltage See Figure 4 0.8 1.2 V
ΔVOS(SS) Change in steady-state common-mode output voltage between logic states –50 50 mV
VOS(PP) Peak-to-peak common-mode output voltage 150 mV
VY(OC) or
VA(OC) 		Maximum steady-state open-circuit output voltage See Figure 8 0 2.4 V
VZ(OC) or
VB(OC) 		Maximum steady-state open-circuit output voltage 0 2.4 V
VP(H) Voltage overshoot, low-to-high level output See Figure 6 1.2 VSS V
VP(L) Voltage overshoot, high-to-low level output –0.2 VSS V
IIH High-level input current (D, DE) VIH = 2 V to VCC 0 10 µA
IIL Low-level input current (D, DE) VIL = GND to 0.8 V 0 10 µA
|IOS| Differential short-circuit output current magnitude See Figure 5 24 mA
IOZ High-impedance state output current (driver only) –1.4 V ≤ (VY or VZ) ≤ 3.8 V,
Other output = 1.2 V		 –15 10 µA
IO(OFF) Power-off output current –1.4 V ≤ (VY or VZ) ≤ 3.8 V, Other output = 1.2 V, 0 V ≤ VCC≤ 1.5 V –10 10 µA
CY or CZ Output capacitance VI = 0.4 sin(30E6πt) + 0.5 V,(3)
Other input at 1.2 V, driver disabled		 3 pF
CYZ Differential output capacitance VAB = 0.4 sin(30E6πt) V, (3)
Driver disabled		 2.5 pF
CY/Z Output capacitance balance, (CY/CZ) 0.99 1.01 pF
(1) The algebraic convention in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
(2) All typical values are at 25°C and with a 3.3-V supply voltage.
(3) HP4194A impedance analyzer (or equivalent)
(4) Measurement equipment accuracy is 10 mV at –40°C

6.7 Electrical Characteristics – Receiver

over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VIT+ Positive-going differential input voltage
threshold (4)		 Type 1 See Figure 10, Table 1, and Table 2 50 mV
Type 2 150
VIT- Negative-going differential input voltage
threshold (4)		 Type 1 –50 mV
Type 2 50
VHYS Differential input voltage hysteresis, (VIT+ – VIT–) Type 1 25 mV
Type 2 0
VOH High-level output voltage (R) IOH = –8 mA 2.4 V
VOL Low-level output voltage (R) IOL = 8 mA 0.4 V
IIH High-level input current (RE) VIH = 2 V to VCC –10 0 µA
IIL Low-level input current (RE) VIL = GND to 0.8 V –10 0 µA
IOZ High-impedance output current (R) VO = 0 V or 3.6 V –10 15 µA
CA or CB Input capacitance VI = 0.4 sin(30E6πt) + 0.5 V(2),
Other input at 1.2 V		 3 pF
CAB Differential input capacitance VAB = 0.4 sin(30E6πt) V(2) 2.5 pF
CA/B Input capacitance balance, (CA/CB) 0.99 1.01 pF
(1) All typical values are at 25°C and with a 3.3-V supply voltage.
(2) HP4194A impedance analyzer (or equivalent)

6.8 Electrical Characteristics – BUS Input and Output

over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
IA Receiver or transceiver with driver disabled input current VA = 3.8 V, VB = 1.2 V, 0 32 µA
VA = 0 V or 2.4 V, VB = 1.2 V –20 20
VA = –1.4 V, VB = 1.2 V –32 0
IB Receiver or transceiver with driver disabled input current VB = 3.8 V, VA = 1.2 V 0 32 µA
VB = 0 V or 2.4 V, VA = 1.2 V –20 20
VB = –1.4 V, VA = 1.2 V –32 0
IAB Receiver or transceiver with driver disabled differential input current (IA – IB) VA = VB, 1.4 ≤ VA ≤ 3.8 V –4 4 µA
IA(OFF) Receiver or transceiver power-off input current VA = 3.8 V, VB = 1.2 V, 0 V ≤ VCC ≤ 1.5 V 0 32 µA
VA = 0 V or 2.4 V, VB = 1.2 V, 0 V ≤ VCC ≤ 1.5 V –20 20
VA = –1.4 V, VB = 1.2 V, 0 V ≤ VCC ≤ 1.5 V –32 0
IB(OFF) Receiver or transceiver power-off input current VB = 3.8 V, VA = 1.2 V, 0 V ≤ VCC ≤ 1.5 V 0 32 µA
VB = 0 V or 2.4 V, VA = 1.2 V, 0 V ≤ VCC ≤ 1.5 V –20 20
VB = –1.4 V, VA = 1.2 V, 0 V ≤ VCC ≤ 1.5 V –32 0
IAB(OFF) Receiver input or transceiver power-off differential input current (IA – IB) VA = VB, 0 V ≤ VCC ≤ 1.5 V, –1.4 ≤ VA ≤ 3.8 V –4 4 µA
CA Transceiver with driver disabled input capacitance VA = 0.4 sin (30E6πt) + 0.5 V(2), VB = 1.2 V 5 pF
CB Transceiver with driver disabled input capacitance VB = 0.4 sin (30E6πt) + 0.5 V(2), VA = 1.2 V 5 pF
CAB Transceiver with driver disabled differential input capacitance VAB = 0.4 sin (30E6πt)V(2) 4 pF
CA/B Transceiver with driver disabled input capacitance balance, (CA/CB) 0.99 1.01 pF
(1) All typical values are at 25°C and with a 3.3-V supply voltage.
(2) HP4194A impedance analyzer (or equivalent)

6.9 Switching Characteristics – Driver

over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tpLH Propagation delay time, low-to-high-level output See Figure 6 2 2.5 3.5 ns
tpHL Propagation delay time, high-to-low-level output 2 2.5 3.5 ns
tr Differential output signal rise time 2 ns
tf Differential output signal fall time 2 ns
tsk(p) Pulse skew (|tpHL – tpLH|) 30 150 ps
tsk(pp) Part-to-part skew (2) 0.9 ns
tjit(per) Period jitter, rms (1 standard deviation)(3) 50-MHz clock input(4) 2 3 ps
tjit(pp) Peak-to-peak jitter(3)(6) 100 Mbps 215 –1 PRBS input(5) 55 150 ps
tPHZ Disable time, high-level-to-high-impedance output See Figure 7 4 7 ns
tPLZ Disable time, low-level-to-high-impedance output 4 7 ns
tPZH Enable time, high-impedance-to-high-level output 4 7 ns
tPZL Enable time, high-impedance-to-low-level output 4 7 ns
(1) All typical values are at 25°C and with a 3.3-V supply voltage.
(2) Part-to-part skew is defined as the difference in propagation delays between two devices that operate at the same V/T conditions.
(3) Jitter is ensured by design and characterization. Stimulus jitter has been subtracted from the numbers.
(4) tr = tf = 0.5 ns (10% to 90%), measured over 30K samples.
(5) tr = tf = 0.5 ns (10% to 90%), measured over 100K samples.
(6) Peak-to-peak jitter includes jitter due to pulse skew (tsk(p)).

6.10 Switching Characteristics – Receiver

over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
tPLH Propagation delay time, low-to-high-level output CL = 15 pF, See Figure 11 2 6 10 ns
tPHL Propagation delay time, high-to-low-level output 2 6 10 ns
tr Output signal rise time 2.3 ns
tf Output signal fall time 2.3 ns
tsk(p) Pulse skew (|tpHL – tpLH|) Type 1 100 300 ps
Type 2 400 750 ps
tsk(pp) Part-to-part skew(2) 1 ns
tjit(per) Period jitter, rms (1 standard deviation)(3) 50-MHz clock input(4) 2 ps
tjit(pp) Peak-to-peak jitter(3) (6) Type 1 100 Mbps 215 –1 PRBS input(5) 200 700 ps
Type 2 225 800 ps
tPHZ Disable time, high-level-to-high-impedance output See Figure 12 6 10 ns
tPLZ Disable time, low-level-to-high-impedance output 6 10 ns
tPZH Enable time, high-impedance-to-high-level output 10 15 ns
tPZL Enable time, high-impedance-to-low-level output 10 15 ns
(1) All typical values are at 25°C and with a 3.3-V supply voltage.
(2) Part-to-part skew is defined as the difference in propagation delays between two devices that operate at the same V/T conditions.
(3) Jitter is ensured by design and characterization. Stimulus jitter has been subtracted from the numbers.
(4) VID = 200 mVpp (MLVD200B, 202B), VID = 400 mVpp (MLVD204B, 205B), Vcm = 1 V, tr = tf = 0.5 ns (10% to 90%), measured over 30K samples.
(5) VID = 200 mVpp (MLVD200B, 202B), VID = 400 mVpp (MLVD204B, 205B), Vcm = 1 V, tr = tf = 0.5 ns (10% to 90%), measured over 100K samples.
(6) Peak-to-peak jitter includes jitter due to pulse skew (tsk(p))

6.11 Typical Characteristics

SN65MLVD204B D001_SLLSEX9.gif
TA = 25°C
Figure 1. Differential Output Voltage vs Supply Voltage