ZHCSMO3C June   2020  – April 2021 OPA2863 , OPA863

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information: OPA863
    5. 7.5  Thermal Information: OPA2863
    6. 7.6  Electrical Characteristics: 10 V
    7. 7.7  Electrical Characteristics: 3 V
    8. 7.8  Typical Characteristics: VS = 10 V
    9. 7.9  Typical Characteristics: VS = 3 V
    10. 7.10 Typical Characteristics: VS = 3 V to 10 V
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stage
      2. 8.3.2 Output Stage
        1. 8.3.2.1 Overload Power Limit
      3. 8.3.3 ESD Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Mode
      2. 8.4.2 Split-Supply Operation (±1.35 V to ±6.3 V)
      3. 8.4.3 Single-Supply Operation (2.7 V to 12.6 V)
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Amplifier Gain Configurations
    2. 9.2 Low-Side Current Sensing
      1. 9.2.1 Design Requirements
    3. 9.3 Transimpedance Amplifier
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curves
    4. 9.4 Low-Power SAR ADC Driver and Reference Buffer
    5. 9.5 Front-End Gain and Filtering
    6. 9.6 Clamp-On Ultrasonic Flow Meter
    7. 9.7 Variable Reference Generator Using MDAC
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Thermal Considerations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Typical Characteristics: VS = 3 V to 10 V

At VOUT = 2 VPP, RF = 0 Ω for Gain = 1 V/V, otherwise RF = 1 kΩ for other gains, CL = 1 pF, RL = 2 kΩ referenced to mid-supply, G = 1 V/V, input and output referenced to mid-supply, and TA ≈ 25°C (unless otherwise noted)



See Figure 9-1, VOUT = 20 mVPP
Figure 7-29 Small-Signal Frequency Response vs Supply Voltage
GUID-C5E992CB-00AD-43F9-AA3B-E3A31BF7E394-low.gif
Figure 7-31 Input Voltage Noise Density vs Frequency
Figure 7-33 Common-Mode Rejection Ratio vs Frequency
Figure 7-35 Open-Loop Output Impedance vs Frequency


See Figure 9-1, VOUT = 2 VPP
Figure 7-37 Harmonic Distortion vs Supply Voltage


15300 units, μ = 678 μA, σ = 13 μA, VS = 10 V
Figure 7-39 Quiescent Current Distribution


30600 units, μ = 209 μV, σ = 193 μV, VS = 10 V
Figure 7-41 Input Offset Voltage Distribution


35 units, DGK package, VS = 10 V
Figure 7-43 Quiescent Current vs Ambient Temperature


Normalized to 25 °C values, 35 units, DGK package, VS = 10 V
Figure 7-45 Input Offset Voltage vs Ambient Temperature


See Figure 9-1, VOUT = 1 VPP
Figure 7-30 Large-Signal Frequency Response vs Supply Voltage


Figure 7-32 Input Current Noise Density vs Frequency
Figure 7-34 Power Supply Rejection Ratio vs Frequency
GUID-FB6E46DC-1FA3-4BB9-8864-FC570DA748D7-low.gif
Small-signal response
Figure 7-36 Open-Loop Gain and Phase vs Frequency


DGK package, G = 1 V/V, RF = 0 Ω
Figure 7-38 Crosstalk vs Frequency


30600 units, μ = 251 nA, σ = 5.6 nA, VS = 10 V
Figure 7-40 Input Bias Current Distribution


35 units, μ = -0.26 μV/°C, σ = 0.49 μV/°C, VS = 10 V
Figure 7-42 Input Offset Voltage Drift Distribution


35 units, DGK package, VS = 10 V
Figure 7-44 Input Bias Current vs Ambient Temperature