5.12 Current Consumption in Low-Frequency Active Modes – Dhrystone 2.1 Program
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)(1)(2)(3)(4)(5)
PARAMETER |
EXECUTION MEMORY |
VCC |
–40°C |
25°C |
60°C |
105°C |
UNIT |
TYP |
MAX |
TYP |
MAX |
TYP |
MAX |
TYP |
MAX |
IAM_LF_VCORE0, Flash(6)(7)(9) |
Flash |
2.2 V |
88 |
|
96 |
|
108 |
|
305 |
|
μA |
3.0 V |
88 |
|
96 |
120 |
108 |
|
305 |
600 |
IAM_LF_VCORE0, SRAM(8) |
SRAM |
2.2 V |
88 |
|
95 |
|
110 |
|
373 |
|
μA |
3.0 V |
90 |
|
95 |
120 |
111 |
|
373 |
800 |
(1) Current measured into VCC.
(2) All other input pins tied to 0 V or VCC. Outputs do not source or sync any current.
(3) MCLK, HSMCLK, and SMCLK sourced by REFO at 128 kHz.
(4) All peripherals are inactive.
(5) SRAM banks 0 and 1 enabled for execution from flash, and SRAM banks 0 to 3 enabled for execution from SRAM.
(6) Flash configured to 0 wait states.
(7) Device executing the Dhrystone 2.1 program. Code execution from Flash. Stack and data in SRAM.
(8) Device executing the Dhrystone 2.1 program. Code execution from SRAM. Stack and data also in SRAM.
(9) Flash instruction and data buffers are enabled (BUFI = BUFD = 1).