ZHCSOW4B September   2021  – March 2022 LM74720-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Dual Gate Control (GATE, PD)
        1. 8.3.1.1 Reverse Battery Protection (A, C, GATE)
        2. 8.3.1.2 Load Disconnect Switch Control (PD)
      2. 8.3.2 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      3. 8.3.3 Boost Regulator
    4. 8.4 Device Functional Mode (Shutdown Mode)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
      2. 9.2.2 Automotive Reverse Battery Protection
        1. 9.2.2.1 Input Transient Protection: ISO 7637-2 Pulse 1
        2. 9.2.2.2 AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
        3. 9.2.2.3 Input Micro-Short Protection: LV124 E-10
      3. 9.2.3 Detailed Design Procedure
        1. 9.2.3.1 Design Considerations
        2. 9.2.3.2 Boost Converter Components (C2, C3, L1)
        3. 9.2.3.3 Input and Output Capacitance
        4. 9.2.3.4 Hold-Up Capacitance
        5. 9.2.3.5 Overvoltage Protection and Battery Monitor
        6. 9.2.3.6 MOSFET Selection: Blocking MOSFET Q1
        7. 9.2.3.7 MOSFET Selection: Load Disconnect MOSFET Q2
        8. 9.2.3.8 TVS Selection
      4. 9.2.4 Application Curves
    3. 9.3 Do's and Don'ts
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
    2. 10.2 TVS Selection for 12-V Battery Systems
    3. 10.3 TVS Selection for 24-V Battery Systems
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 第三方产品免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRR|12
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Pin Configuration and Functions

GUID-20210426-CA0I-SF5D-56JC-NCBHLHZK5LV5-low.gifFigure 5-1 WSON12-Pin DRRTransparent Top View
Table 5-1 Pin Functions
PINTYPEDESCRIPTION
NAMELM74720-Q1
DRR-12 (WSON)
GATE1ODiode controller gate drive output. Connect to the GATE of the external MOSFET.
A2IAnode of the ideal diode. Connect to the source of the external MOSFET.
VSNS3IVoltage sensing input
SW4IVoltage sensing disconnect switch terminal. VSNS and SW are internally connected through a switch. Use SW as the top connection of the battery sensing or OV resistor ladder network. When EN is pulled low, the switch is OFF, disconnecting the resistor ladder from the battery line, thereby cutting off the leakage current. If the internal disconnect switch between VSNS and SW is not used, then short them together and connect to C pin.
OV5IAdjustable overvoltage threshold input. Connect a resistor ladder across SW to OV terminal. When the voltage at OV exceeds the overvoltage cut-off threshold, then the PD is pulled low turning OFF the HSFET. PD is driven high when the sense voltage goes below the OV falling threshold.
EN6IEN Input. Connect to A or C pin for always ON operation. In this mode, the device consumes an IQ of 35 µA (maximum). Can be driven externally from a micro controller I/O. Pulling the pin low below 0.5 V enters the device in low Iq shutdown mode.
GND7GConnect to the system ground plane.
PD8OPull down connection for the external load disconnect FET. Connect to the GATE of the external FET to PD pin.

Leave PD pin floating if the load disconnect FET is not used.

LX9ISwitch node of the internal boost regulator. This node must be kept small on the PCB for good performance and low EMI. Connect the boost inductor between this pin and the DRAIN connection of the external FET.
CAP10OBoost Regulator Output. This pin is used to provide a drive voltage to the gate driver of the ideal diode stage as well as drive supply for the HSFET. Connect a 1-µF capacitor between this pin and the VS pin.
VS11ISupply voltage pin
C12ICathode of the ideal diode. Connect to the DRAIN of the external MOSFET. The voltage sensed at this pin is used to control the external MOSFET GATE.
RTNThermal Pad—Leave exposed pad floating. Do not connect to GND plane.