ZHCSOA6A July   2021  – February 2022 LM74501-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Voltage
      2. 8.3.2 Charge Pump
      3. 8.3.3 Enable
      4. 8.3.4 Gate Driver
      5. 8.3.5 SW (Battery Voltage Monitoring)
      6. 8.3.6 Gate Discharge Timer
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Full Conduction Mode
      3. 8.4.3 VDS Clamp
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Reverse Battery Protection
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Design Considerations
        2. 9.2.2.2 MOSFET Selection
        3. 9.2.2.3 Gate Discharge Timer Capacitor Selection (CT)
        4. 9.2.2.4 Charge Pump VCAP, Input and Output Capacitance
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 第三方产品免责声明
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

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机械数据 (封装 | 引脚)
  • DDF|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

TJ = –40°C to +125°C; typical values at TJ = 25°C, V(SOURCE) = 12 V, CIN = C(VCAP) = COUT = 0.1 µF, V(EN) = 3.3 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VSOURCE SUPPLY VOLTAGE
VCLAMP VDS clamp voltage V(EN) = 0 V 19 24 V
V(SOURCE) Operating input voltage 4 60 V
V(SOURCE POR) VSOURCE POR rising threshold 3.9 V
VSOURCE POR falling threshold 2.2 2.8 3.1 V
V(SOURCE POR(Hys)) VSOURCE POR hysteresis 0.44 0.67 V
I(SHDN) Shutdown supply current V(EN) = 0 V 0.9 1.5 µA
I(Q) Operating quiescent current 80 130 µA
ENABLE INPUT
V(EN_IL) Enable input low threshold 0.5 0.9 1.22 V
V(EN_IH) Enable input high threshold 1.06 2 2.6
V(EN_Hys) Enable hysteresis 0.52 1.35 V
I(EN) Enable sink current V(EN) = 12 V 3 5 µA
GATE DRIVE
I(GATE) Peak source current Enable (low to high)
V(GATE) – V(SOURCE) = 5 V		 3 11 mA
RDSON discharge switch RDSON V(EN) = 0 V, 
V(GATE) – V(SOURCE) = 100 mV		 24 30 36 kΩ
SW
R(SW) Battery sensing disconnect switch resistance 4 V < V(SOURCE) ≤ 60 V 10 19.5 46 Ω
CHARGE PUMP
I(VCAP) Charge pump source current (charge pump on) V(VCAP) – VSOURCE = 7 V 162 300 600 µA
Charge pump sink current (charge pump off) V(VCAP) – VSOURCE = 14 V 5 10 µA
V(VCAP) – V(SOURCE) Charge pump voltage at V(SOURCE)  = 3.2 V I(VCAP) ≤ 30 µA 8 V
Charge pump turn-on voltage 10.3 11.6 13 V
Charge pump turn-off voltage 11 12.4 13.9 V
Charge pump enable comparator hysteresis 0.4 0.8 1.2 V
V(VCAP UVLO) V(VCAP) – V(SOURCE) UV release at rising edge VSOURCE  – VDRAIN = 100 mV 5.7 6.5 7.5 V
V(VCAP) – V(SOURCE) UV threshold at falling edge VSOURCE  – VDRAIN = 100 mV 5.05 5.4 6.2 V
DRAIN
I(DRAIN) DRAIN sink current V(SOURCE) = V(EN) = –14 V, V(DRAIN) = 0 V 4 µA