ZHCSMX4D September   2020  – March 2022 DRV8300

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings Comm
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Diagrams
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three BLDC Gate Drivers
        1. 8.3.1.1 Gate Drive Timings
          1. 8.3.1.1.1 Propagation Delay
          2. 8.3.1.1.2 Deadtime and Cross-Conduction Prevention
        2. 8.3.1.2 Mode (Inverting and non inverting INLx)
      2. 8.3.2 Pin Diagrams
      3. 8.3.3 Gate Driver Protective Circuits
        1. 8.3.3.1 VBSTx Undervoltage Lockout (BSTUV)
        2. 8.3.3.2 GVDD Undervoltage Lockout (GVDDUV)
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Bootstrap Capacitor and GVDD Capacitor Selection
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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7.1 Absolute Maximum Ratings

over operating temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Gate driver regulator pin voltage GVDD -0.3 21.5 V
Bootstrap pin voltage BSTx  -0.3 125 V
Bootstrap pin voltage BSTx with respect to SHx   -0.3 21.5 V
Logic pin voltage INHx, INLx, MODE, DT -0.3 VGVDD+0.3 V
High-side gate drive pin voltage GHx -22 125 V
High-side gate drive pin voltage GHx with respect to SHx -0.3 22 V
Transient 500-ns high-side gate drive pin voltage GHx with respect to SHx -5 22 V
Low-side gate drive pin voltage GLx -0.3 VGVDD+0.3 V
Transient 500-ns low-side gate drive pin voltage GLx -5 VGVDD+0.3 V
High-side source pin voltage SHx -22 110 V
Ambient temperature, TA –40 125 °C
Junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime