ZHCSBW8B December   2013  – January 2015 CSD19533KCS

PRODUCTION DATA.  

  1. 1特性
  2. 2应用范围
  3. 3说明
  4. 4修订历史记录
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6器件和文档支持
    1. 6.1 商标
    2. 6.2 静电放电警告
    3. 6.3 术语表
  7. 7机械、封装和可订购信息
    1. 7.1 KCS 封装尺寸

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 100 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.2 2.8 3.4 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 55 A 9.7 12.2 mΩ
VGS = 10 V, ID = 55 A 8.7 10.5 mΩ
gƒs Transconductance VDS = 10 V, ID = 55 A 115 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 50 V, ƒ = 1 MHz 2050 2670 pF
Coss Output Capacitance 395 514 pF
Crss Reverse Transfer Capacitance 9.6 12.5 pF
RG Series Gate Resistance 1.2 2.4 Ω
Qg Gate Charge Total (10 V) VDS = 50 V, ID = 55 A 27 35 nC
Qgd Gate Charge Gate-to-Drain 5.4 nC
Qgs Gate Charge Gate-to-Source 9 nC
Qg(th) Gate Charge at Vth 3.9 nC
Qoss Output Charge VDS = 50 V, VGS = 0 V 79 nC
td(on) Turn On Delay Time VDS = 50 V, VGS = 10 V,
IDS = 55 A, RG = 0 Ω		 7 ns
tr Rise Time 5 ns
td(off) Turn Off Delay Time 12 ns
tƒ Fall Time 2 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 55 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse Recovery Charge VDS= 50 V, IF = 55 A,
di/dt = 300 A/μs		 211 nC
trr Reverse Recovery Time 77 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.8 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD19533KCS graph01_SLPS479.png
Figure 1. Transient Thermal Impedance
CSD19533KCS graph02_SLPS482.png
Figure 2. Saturation Characteristics
CSD19533KCS graph03_SLPS482.png
Figure 3. Transfer Characteristics
CSD19533KCS graph04_SLPS482.png
Figure 4. Gate Charge
CSD19533KCS graph06_SLPS479.png
Figure 6. Threshold Voltage vs Temperature
CSD19533KCS graph08_SLPS482.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD19533KCS graph10_SLPS482A.png
Figure 10. Maximum Safe Operating Area
CSD19533KCS graph12_SLPS482.png
Figure 12. Maximum Drain Current vs Temperature
CSD19533KCS graph05_SLPS482.png
Figure 5. Capacitance
CSD19533KCS graph07_SLPS482.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD19533KCS graph09_SLPS482.png
Figure 9. Typical Diode Forward Voltage
CSD19533KCS graph11_SLPS482.png
Figure 11. Single Pulse Unclamped Inductive Switching