ZHCSES4A March 2016 – June 2025 CSD19506KTT
PRODUCTION DATA
| 参数 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 | ||
|---|---|---|---|---|---|---|---|
| 静态特性 | |||||||
| BVDSS | 漏源电压 | VGS = 0V，ID = 250μA | 80 | V | |||
| IDSS | 漏源漏电流 | VGS = 0V，VDS = 64V | 1 | μA | |||
| IGSS | 栅源漏电流 | VDS = 0V，VGS = 20V | 100 | nA | |||
| VGS(th) | 栅源阈值电压 | VDS = VGS，ID = 250μA | 2.1 | 2.5 | 3.2 | V | |
| RDS(on) | 漏源导通电阻 | VGS = 6V，ID = 100A | 2.2 | 2.8 | mΩ | ||
| VGS = 10V，ID = 100A | 2.0 | 2.3 | mΩ | ||||
| gfs | 跨导 | VDS = 8V，ID = 100A | 297 | S | |||
| 动态特性 | |||||||
| Ciss | 输入电容 | VGS = 0V，VDS = 40V，ƒ = 1MHz | 9380 | 12200 | pF | ||
| Coss | 输出电容 | 2260 | 2940 | pF | |||
| Crss | 反向传输电容 | 42 | 55 | pF | |||
| RG | 串联栅极电阻 | 1.3 | 2.6 | Ω | |||
| Qg | 栅极电荷总量 (10V) | VDS = 40V，ID = 100A | 120 | 156 | nC | ||
| Qgd | 栅极电荷（栅极到漏极） | 20 | nC | ||||
| Qgs | 栅极电荷（栅漏极） | 37 | nC | ||||
| Qg(th) | Vth 下的栅极电荷 | 25 | nC | ||||
| Qoss | 输出电荷 | VDS = 40V，VGS = 0V | 345 | nC | |||
| td(on) | 导通延时时间 | VDS = 40V，VGS = 10V， IDS = 100A，RG = 0Ω | 14 | ns | |||
| tr | 上升时间 | 7 | ns | ||||
| td(off) | 关闭延时时间 | 30 | ns | ||||
| tf | 下降时间 | 5 | ns | ||||
| 二极管特性 | |||||||
| VSD | 二极管正向电压 | ISD = 100A，VGS = 0V | 0.9 | 1.1 | V | ||
| Qrr | 反向恢复电荷 | VDS= 40V，IF = 100A， di/dt = 300A/μs | 525 | nC | |||
| trr | 反向恢复时间 | 107 | ns | ||||