ZHCSGW5A January   2017  – August 2017 CC2640R2F-Q1

PRODUCTION DATA.  

  1. 1器件概述
    1. 1.1 特性
    2. 1.2 应用
    3. 1.3 说明
    4. 1.4 功能框图
  2. 2修订历史记录
  3. 3 Device Comparison
    1. 3.1 Related Products
  4. 4Terminal Configuration and Functions
    1. 4.1 Pin Diagram - RGZ Package
    2. 4.2 Signal Descriptions - RGZ Package
    3. 4.3 Wettable Flanks
  5. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Power Consumption Summary
    5. 5.5  General Characteristics
    6. 5.6  1-Mbps GFSK (Bluetooth low energy Technology) - RX
    7. 5.7  1-Mbps GFSK (Bluetooth low energy Technology) - TX
    8. 5.8  24-MHz Crystal Oscillator (XOSC_HF)
    9. 5.9  32.768-kHz Crystal Oscillator (XOSC_LF)
    10. 5.10 48-MHz RC Oscillator (RCOSC_HF)
    11. 5.11 32-kHz RC Oscillator (RCOSC_LF)
    12. 5.12 ADC Characteristics
    13. 5.13 Temperature Sensor
    14. 5.14 Battery Monitor
    15. 5.15 Continuous Time Comparator
    16. 5.16 Low-Power Clocked Comparator
    17. 5.17 Programmable Current Source
    18. 5.18 Synchronous Serial Interface (SSI)
    19. 5.19 DC Characteristics
    20. 5.20 Thermal Resistance Characteristics for RGZ Package
    21. 5.21 Timing Requirements
    22. 5.22 Switching Characteristics
    23. 5.23 Typical Characteristics
  6. 6Detailed Description
    1. 6.1  Overview
    2. 6.2  Functional Block Diagram
    3. 6.3  Main CPU
    4. 6.4  RF Core
    5. 6.5  Sensor Controller
    6. 6.6  Memory
    7. 6.7  Debug
    8. 6.8  Power Management
    9. 6.9  Clock Systems
    10. 6.10 General Peripherals and Modules
    11. 6.11 System Architecture
  7. 7Application, Implementation, and Layout
    1. 7.1 Application Information
    2. 7.2 7 × 7 Internal Differential (7ID) Application Circuit
      1. 7.2.1 Layout
  8. 8器件和文档支持
    1. 8.1  器件命名规则
    2. 8.2  工具和软件
    3. 8.3  文档支持
    4. 8.4  德州仪器 (TI) 低功耗射频网站
    5. 8.5  社区资源
    6. 8.6  其他信息
    7. 8.7  商标
    8. 8.8  静电放电警告
    9. 8.9  出口管制提示
    10. 8.10 术语表
  9. 9机械、封装和可订购信息
    1. 9.1 封装信息

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RGZ|48
散热焊盘机械数据 (封装 | 引脚)
订购信息

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Supply voltage, VDDS(3) VDDR supplied by internal DC/DC regulator or internal GLDO. VDDS_DCDC connected to VDDS on PCB. –0.3 4.1 V
Voltage on any digital pin(4) –0.3 VDDS + 0.3, max 4.1 V
Voltage on crystal oscillator pins, X32K_Q1, X32K_Q2, X24M_N and X24M_P –0.3 VDDR + 0.3, max 2.25 V
Voltage on ADC input (Vin) Voltage scaling enabled –0.3 VDDS V
Voltage scaling disabled, internal reference –0.3 1.49
Voltage scaling disabled, VDDS as reference –0.3 VDDS / 2.9
Input RF level 5 dBm
Tstg Storage temperature –40 150 °C
All voltage values are with respect to ground, unless otherwise noted.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VDDS2 and VDDS3 need to be at the same potential as VDDS.
Including analog-capable DIO.

ESD Ratings

VALUE UNIT
VESD Electrostatic discharge Human Body Model (HBM), per AEC Q100-002(1)(2) All pins ±2000 V
Charged Device Model (CDM), per AEC Q100-011(3) XOCS pins 46, 47 ±250
All other pins ±500
AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Ambient temperature –40 105 °C
Operating supply voltage, VDDS For operation in battery-powered and 3.3-V systems
(internal DC/DC can be used to minimize power consumption)
1.8 3.8 V

Power Consumption Summary

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V with internal DC/DC converter, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Icore Core current consumption Reset. RESET_N pin asserted or VDDS below power-on-reset (POR) threshold 100 nA
Shutdown. No clocks running, no retention 150
Standby. With RTC, CPU, RAM and (partial) register retention. RCOSC_LF 1.3 µA
Standby. With RTC, CPU, RAM and (partial) register retention. XOSC_LF 1.5
Standby. With Cache, RTC, CPU, RAM and (partial) register retention. RCOSC_LF 3.4
Standby. With Cache, RTC, CPU, RAM and (partial) register retention. XOSC_LF 3.6
Idle. Supply Systems and RAM powered. 650
Active. Core running CoreMark 1.45 mA + 31 µA/MHz
Radio RX 6.1 mA
Radio TX, 0-dBm output power 7.0
Radio TX, 5-dBm output power 9.3
Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)(1)
Iperi Peripheral power domain Delta current with domain enabled 20 µA
Serial power domain Delta current with domain enabled 13 µA
RF Core Delta current with power domain enabled, clock enabled, RF core idle 237 µA
µDMA Delta current with clock enabled, module idle 130 µA
Timers Delta current with clock enabled, module idle 113 µA
I2C Delta current with clock enabled, module idle 12 µA
I2S Delta current with clock enabled, module idle 36 µA
SSI Delta current with clock enabled, module idle 93 µA
UART Delta current with clock enabled, module idle 164 µA
Iperi is not supported in Standby or Shutdown.

General Characteristics

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
FLASH MEMORY
Supported flash erase cycles before failure 100 k Cycles
Maximum number of write operations per row before erase(1) 83 write operations
Flash retention 105°C 11.4 Years at 105°C
Flash page/sector erase current Average delta current 12.6 mA
Flash page/sector size 4 KB
Flash write current Average delta current, 4 bytes at a time 8.15 mA
Flash page/sector erase time(2) 8 ms
Flash write time(2) 4 bytes at a time 8 µs
Each row is 2048 bits (or 256 bytes) wide.
This number is dependent on Flash aging and will increase over time and erase cycles.

1-Mbps GFSK (Bluetooth low energy Technology) – RX

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Receiver sensitivity Differential mode. Measured at the CC2640Q1EM-7ID SMA connector, BER = 10–3 –97 dBm
Receiver saturation Differential mode. Measured at the CC2640Q1EM-7ID SMA connector, BER = 10–3 4 dBm
Frequency error tolerance Difference between the incoming carrier frequency and the internally generated carrier frequency –350 350 kHz
Data rate error tolerance Difference between incoming data rate and the internally generated data rate –750 750 ppm
Co-channel rejection(2) Wanted signal at –67 dBm, modulated interferer in channel, BER = 10–3 –6 dB
Selectivity, ±1 MHz(2) Wanted signal at –67 dBm, modulated interferer at ±1 MHz, BER = 10–3 7 / 2(1) dB
Selectivity, ±2 MHz(2) Wanted signal at –67 dBm, modulated interferer at ±2 MHz, Image frequency is at –2 MHz, BER = 10–3 39 / 17(1) dB
Selectivity, ±3 MHz(2) Wanted signal at –67 dBm, modulated interferer at ±3 MHz, BER = 10–3 38 / 30(1) dB
Selectivity, ±4 MHz(2) Wanted signal at –67 dBm, modulated interferer at ±4 MHz, BER = 10–3 42 / 36(1) dB
Selectivity, ±5 MHz or more(2) Wanted signal at –67 dBm, modulated interferer at ≥ ±5 MHz, BER = 10–3 32 dB
Selectivity, Image frequency(2) Wanted signal at –67 dBm, modulated interferer at image frequency, BER = 10–3 17 dB
Selectivity, Image frequency
±1 MHz(2)
Wanted signal at –67 dBm, modulated interferer at ±1 MHz from image frequency, BER = 10–3 2 / 30(1) dB
Out-of-band blocking (3) 30 MHz to 2000 MHz –20 dBm
Out-of-band blocking 2003 MHz to 2399 MHz –5 dBm
Out-of-band blocking 2484 MHz to 2997 MHz –8 dBm
Out-of-band blocking 3000 MHz to 12.75 GHz –8 dBm
Intermodulation Wanted signal at 2402 MHz, –64 dBm. Two interferers at 2405 and 2408 MHz respectively, at the given power level –34 dBm
Spurious emissions,
30 MHz to 1000 MHz
Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440, FCC CFR47, Part 15 and ARIB STD-T-66 –65 dBm
Spurious emissions,
1 GHz to 12.75 GHz
Conducted measurement in a 50-Ω single-ended load. Suitable for systems targeting compliance with EN 300 328, EN 300 440, FCC CFR47, Part 15 and ARIB STD-T-66 –52 dBm
RSSI dynamic range 70 dB
RSSI accuracy ±4 dB
X / Y, where X is +N MHz and Y is –N MHz.
Numbers given as I/C dB.
Excluding one exception at Fwanted / 2, per Bluetooth Specification.

1-Mbps GFSK (Bluetooth low energy Technology) – TX

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Output power, highest setting Differential mode, delivered to a single-ended 50-Ω load through a balun 5 dBm
Output power, lowest setting Delivered to a single-ended 50-Ω load through a balun –21 dBm
Spurious emission conducted measurement(1) f < 1 GHz, outside restricted bands –44 dBm
f < 1 GHz, restricted bands ETSI –62 dBm
f < 1 GHz, restricted bands FCC –62 dBm
f > 1 GHz, including harmonics –55 dBm
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328 and EN 300 440 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan).

24-MHz Crystal Oscillator (XOSC_HF)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ESR Equivalent series resistance(2) 6 pF < CL ≤ 9 pF 20 60 Ω
ESR Equivalent series resistance(2) 5 pF < CL ≤ 6 pF 80 Ω
LM Motional inductance(2) Relates to load capacitance
(CL in Farads)
< 1.6 × 10–24 / CL2 H
CL Crystal load capacitance(2) 5 9 pF
Crystal frequency(2)(3) 24 MHz
Crystal frequency tolerance(2)(4) –40 40 ppm
Start-up time(3)(5) 150 µs
Probing or otherwise stopping the crystal while the DC/DC converter is enabled may cause permanent damage to the device.
The crystal manufacturer's specification must satisfy this requirement
Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V
Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance, as per Bluetooth specification.
Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection.

32.768-kHz Crystal Oscillator (XOSC_LF)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency(1) 32.768 kHz
Crystal frequency tolerance, Bluetooth low-energy applications(1)(2) –500 500 ppm
ESR Equivalent series resistance(1) 30 100
CL Crystal load capacitance(1) 6 12 pF
The crystal manufacturer's specification must satisfy this requirement.
Includes initial tolerance of the crystal, drift over temperature, ageing and frequency pulling due to incorrect load capacitance, as per Bluetooth specification.

48-MHz RC Oscillator (RCOSC_HF)

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency 48 MHz
Uncalibrated frequency accuracy ±1%
Calibrated frequency accuracy(1) ±0.25%
Start-up time 5 µs
Accuracy relative to the calibration source (XOSC_HF).

32-kHz RC Oscillator (RCOSC_LF)

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Calibrated frequency(1) 32.8 kHz
Temperature coefficient 50 ppm/°C
The frequency accuracy of the real time clock (RTC) is not directly dependent on the frequency accuracy of the 32-kHz RC oscillator. The RTC can be calibrated by measuring the frequency error of RCOSC_LF relative to XOSC_HF and compensating the RTC tick speed.

ADC Characteristics

Tc = 25°C, VDDS = 3.0 V without internal DC/DC converter and with voltage scaling enabled, unless otherwise noted.(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 VDDS V
Resolution 12 Bits
Sample rate 200 ksps
Offset Internal 4.3-V equivalent reference(2) 2 LSB
Gain error Internal 4.3-V equivalent reference(2) 2.4 LSB
DNL(3) Differential nonlinearity >–1 LSB
INL(4) Integral nonlinearity ±3 LSB
ENOB Effective number of bits Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
9.8 Bits
VDDS as reference, 200 ksps, 9.6-kHz input tone 10
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
11.1
THD Total harmonic distortion Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
–65 dB
VDDS as reference, 200 ksps, 9.6-kHz input tone –69
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
–71
SINAD,
SNDR
Signal-to-noise
and
Distortion ratio
Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
60 dB
VDDS as reference, 200 ksps, 9.6-kHz input tone 63
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
69
SFDR Spurious-free dynamic range Internal 4.3-V equivalent reference(2), 200 ksps,
9.6-kHz input tone
67 dB
VDDS as reference, 200 ksps, 9.6-kHz input tone 72
Internal 1.44-V reference, voltage scaling disabled,
32 samples average, 200 ksps, 300-Hz input tone
73
Conversion time Serial conversion, time-to-output, 24-MHz clock 50 clock-cycles
Current consumption Internal 4.3-V equivalent reference(2) 0.66 mA
Current consumption VDDS as reference 0.75 mA
Reference voltage Equivalent fixed internal reference (input voltage scaling enabled). For best accuracy, the ADC conversion should be initiated through the TI-RTOS API to include the gain/offset compensation factors stored in FCFG1. 4.3(2)(5) V
Reference voltage Fixed internal reference (input-voltage scaling disabled). For the best accuracy, the ADC conversion should be initiated through the TI-RTOS API to include the gain/offset compensation factors stored in FCFG1. This value is derived from the scaled value (4.3 V) as follows.
Vref = 4.3 V × 1408 / 4095
1.48 V
Reference voltage VDDS as reference (also known as RELATIVE) (input voltage scaling enabled) VDDS V
Reference voltage VDDS as reference (also known as RELATIVE) (input voltage scaling disabled) VDDS / 2.82(5) V
Input Impedance 200 ksps, voltage scaling enabled. Capacitive input, input impedance depends on sampling frequency and sampling time >1
Using IEEE Std 1241™-2010 for terminology and test methods.
Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3 V.
No missing codes. Positive DNL typically varies from +0.3 to +3.5, depending on device (see Figure 5-21).
For a typical example, see Figure 5-22.
Applied voltage must be within absolute maximum ratings at all times (see Section 5.1).

Temperature Sensor

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Resolution 4 °C
Range –40 105 °C
Accuracy ±5 °C
Supply voltage coefficient(1) 3.2 °C/V
Automatically compensated when using supplied driver libraries.

Battery Monitor

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Resolution 50 mV
Range 1.8 3.8 V
Accuracy 13 mV

Continuous Time Comparator

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 VDDS V
External reference voltage 0 VDDS V
Internal reference voltage DCOUPL as reference 1.27 V
Offset 3 mV
Hysteresis <2 mV
Decision time Step from –10 mV to 10 mV 0.72 µs
Current consumption when enabled(1) 8.6 µA
Additionally, the bias module must be enabled when running in standby mode.

Low-Power Clocked Comparator

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 VDDS V
Clock frequency 32 kHz
Internal reference voltage, VDDS / 2 1.49–1.51 V
Internal reference voltage, VDDS / 3 1.01–1.03 V
Internal reference voltage, VDDS / 4 0.78–0.79 V
Internal reference voltage, DCOUPL / 1 1.25–1.28 V
Internal reference voltage, DCOUPL / 2 0.63–0.65 V
Internal reference voltage, DCOUPL / 3 0.42–0.44 V
Internal reference voltage, DCOUPL / 4 0.33–0.34 V
Offset <2 mV
Hysteresis <5 mV
Decision time Step from –50 mV to 50 mV <1 clock-cycle
Current consumption when enabled 362 nA

Programmable Current Source

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Current source programmable output range 0.25–20 µA
Resolution 0.25 µA
Current consumption(1) Including current source at maximum programmable output 23 µA
Additionally, the bias module must be enabled when running in standby mode.

Synchronous Serial Interface (SSI)

Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
S1(1) tclk_per (SSIClk period) Device operating as SLAVE 12 65024 system clocks
S2(1) tclk_high (SSIClk high time) Device operating as SLAVE 0.5 tclk_per
S3(1) tclk_low (SSIClk low time) Device operating as SLAVE 0.5 tclk_per
S1 (TX only)(1) tclk_per (SSIClk period) One-way communication to SLAVE:
Device operating as MASTER
4 65024 system clocks
S1 (TX and RX)(1) tclk_per (SSIClk period) Normal duplex operation:
Device operating as MASTER
8 65024 system clocks
S2(1) tclk_high (SSIClk high time) Device operating as MASTER 0.5 tclk_per
S3(1) tclk_low(SSIClk low time) Device operating as MASTER 0.5 tclk_per
Refer to SSI timing diagrams Figure 5-1, Figure 5-2, and Figure 5-3.
CC2640R2F-Q1 td_1_swrs158.gif Figure 5-1 SSI Timing for TI Frame Format (FRF = 01), Single Transfer Timing Measurement
CC2640R2F-Q1 td_2_swrs158.gif Figure 5-2 SSI Timing for MICROWIRE Frame Format (FRF = 10), Single Transfer
CC2640R2F-Q1 td_3_swrs158.gif Figure 5-3 SSI Timing for SPI Frame Format (FRF = 00), With SPH = 1

DC Characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TA = 25°C, VDDS = 1.8 V
GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only 1.32 1.54 V
GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only 0.26 0.32 V
GPIO VOH at 4-mA load IOCURR = 1 1.32 1.58 V
GPIO VOL at 4-mA load IOCURR = 1 0.21 0.32 V
GPIO pullup current Input mode, pullup enabled, V(pad) = 0 V 71.7 µA
GPIO pulldown current Input mode, pulldown enabled, V(pad) = VDDS 21.1 µA
GPIO high/low input transition,
no hysteresis
IH = 0, transition between reading 0 and reading 1 0.88 V
GPIO low-to-high input transition,
with hysteresis
IH = 1, transition voltage for input read as 0 → 1 1.07 V
GPIO high-to-low input transition,
with hysteresis
IH = 1, transition voltage for input read as 1 → 0 0.74 V
GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points 0.33 V
TA = 25°C, VDDS = 3.0 V
GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only 2.68 V
GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only 0.33 V
GPIO VOH at 4-mA load IOCURR = 1 2.72 V
GPIO VOL at 4-mA load IOCURR = 1 0.28 V
TA = 25°C, VDDS = 3.8 V
GPIO pullup current Input mode, pullup enabled, V(pad) = 0 V 277 µA
GPIO pulldown current Input mode, pulldown enabled, V(pad) = VDDS 113 µA
GPIO high/low input transition,
no hysteresis
IH = 0, transition between reading 0 and reading 1 1.67 V
GPIO low-to-high input transition,
with hysteresis
IH = 1, transition voltage for input read as 0 → 1 1.94 V
GPIO high-to-low input transition,
with hysteresis
IH = 1, transition voltage for input read as 1 → 0 1.54 V
GPIO input hysteresis IH = 1, difference between 0 → 1 and 1 → 0 points 0.4 V
TA = 25°C
V(IH) Lowest GPIO input voltage reliably interpreted as a «High» 0.8 VDDS(1)
V(IL) Highest GPIO input voltage reliably interpreted as a «Low» 0.2 VDDS(1)
Each GPIO is referenced to a specific VDDS pin. See the technical reference manual listed in Section 8.3 for more details.

Thermal Resistance Characteristics for RGZ Package

over operating free-air temperature range (unless otherwise noted)
NAME DESCRIPTION (°C/W)(1)(2)
JA Junction-to-ambient thermal resistance 29.6
JC(top) Junction-to-case (top) thermal resistance 15.7
JB Junction-to-board thermal resistance 6.2
PsiJT Junction-to-top characterization parameter 0.3
PsiJB Junction-to-board characterization parameter 6.2
JC(bot) Junction-to-case (bottom) thermal resistance 1.9
°C/W = degrees Celsius per watt.
These values are based on a JEDEC-defined 2S2P system (with the exception of the Theta JC [RθJC] value, which is based on a JEDEC-defined 1S0P system) and will change based on environment as well as application. For more information, see the following EIA/JEDEC standards:
  • JESD51-2, Integrated Circuits Thermal Test Method Environmental Conditions - Natural Convection (Still Air)
  • JESD51-3, Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-7, High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages
  • JESD51-9, Test Boards for Area Array Surface Mount Package Thermal Measurements
Power dissipation of 2 W and an ambient temperature of 70ºC is assumed.

Timing Requirements

MIN NOM MAX UNIT
Rising supply-voltage slew rate 0 100 mV/µs
Falling supply-voltage slew rate 0 20 mV/µs
Falling supply-voltage slew rate, with low-power flash settings(1) 3 mV/µs
Positive temperature gradient in standby(3) No limitation for negative temperature gradient, or outside standby mode 5 °C/s
CONTROL INPUT AC CHARACTERISTICS(2)
RESET_N low duration 1 µs
For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22-µF VDDS input capacitor (see Figure 7-1) must be used to ensure compliance with this slew rate.
TA = –40°C to +105°C, VDDS = 1.8 V to 3.8 V, unless otherwise noted.
Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature (see Section 5.11).

Switching Characteristics

Measured on the TI CC2640Q1EM-7ID reference design with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
WAKEUP and TIMING
Idle → Active 14 µs
Standby → Active 151 µs
Shutdown → Active 1015 µs

Typical Characteristics

CC2640R2F-Q1 D001_BLE-Sensitivity-vs-Temperature-SWRS201A.gif
Figure 5-4 Bluetooth low energy Sensitivity vs Temperature
CC2640R2F-Q1 D003_BLE-Sensitivity-vs-Channel-Frequency-SWRS201A.gif
Figure 5-6 Bluetooth low energy Sensitivity vs
Channel Frequency
CC2640R2F-Q1 D005_TX-Output-Power-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-8 TX Output Power vs Supply Voltage (VDDS)
CC2640R2F-Q1 D007_TX-Current-Consumption-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-10 TX Current Consumption
vs Supply Voltage (VDDS)
CC2640R2F-Q1 D009_RX-Mode-Current-Consumption-vs-Temperature-SWRS201A.gif
Figure 5-12 RX Mode Current Consumption vs Temperature
CC2640R2F-Q1 D011_Active-Mode-(MCU-Running-No-Peripherals)-Current-Consumption-vs-Temp-SWRS201A.gif
Figure 5-14 Active Mode (MCU Running, No Peripherals)
Current Consumption vs Temperature
CC2640R2F-Q1 D013_Standby-Mode-Current-Consumption-with-RCOSC-RTC-vs-Temp-SWRS201A.gif
Figure 5-16 Standby Mode Current Consumption
vs Temperature
CC2640R2F-Q1 D015_ADC-Output-vs-Supply-Voltage-(Fixed-Input-Internal-Ref-No-Scaling)-SWRS201A.gif
Figure 5-18 SoC ADC Output vs Supply Voltage
(Fixed Input, Internal Reference, No Scaling)
CC2640R2F-Q1 D019_ADC-ENOB-vs-sampling-frequency_SWRS201A.gif
Figure 5-20 SoC ADC ENOB vs Sampling Frequency
(Input Frequency = FS / 10)
CC2640R2F-Q1 D002_BLE-Sensitivity-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-5 Bluetooth low energy Sensitivity vs
Supply Voltage (VDDS)
CC2640R2F-Q1 D004_TX-Output-Power-vs-Temperature-SWRS201A.gif
Figure 5-7 TX Output Power vs Temperature
CC2640R2F-Q1 D006_TX-Output-Power-vs-Channel-Frequency-SWRS201A.gif
Figure 5-9 TX Output Power
vs Channel Frequency
CC2640R2F-Q1 D008_RX-Mode-Current-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-11 RX Mode Current vs Supply Voltage (VDDS)
CC2640R2F-Q1 D010_TX-Mode-Current-Consumption-vs-Temperature-SWRS201A.gif
Figure 5-13 TX Mode Current Consumption vs Temperature
CC2640R2F-Q1 D012_Active-Mode-(MCU-Running-No-Peripherals)-Current-Consumption-vs-Supply-Voltage-(VDDS)-SWRS201A.gif
Figure 5-15 Active Mode (MCU Running, No Peripherals)
Current Consumption vs Supply Voltage (VDDS)
CC2640R2F-Q1 D014_ADC-ENOB-vs-Input-Frequency-(Internal-REference-No-Scaling)-SWRS201A.gif
Figure 5-17 SoC ADC Effective Number of Bits vs
Input Frequency (Internal Reference, No Scaling)
CC2640R2F-Q1 D016_ADC-Output-vs-Temperature-(Fixed-Input-Internal-Reference-No-Scaling)-SWRS201A.gif
Figure 5-19 SoC ADC Output vs Temperature
(Fixed Input, Internal Reference, No Scaling)
CC2640R2F-Q1 D017_ADC-DNL-vs-ADC-Code-SWRS201A.gif
Figure 5-21 SoC ADC DNL vs ADC Code (Internal Reference, No Scaling)
CC2640R2F-Q1 D018_ADC-INL-vs-ADC-Code-SWRS201A.gif
Figure 5-22 SoC ADC INL vs ADC Code (Internal Reference, No Scaling)