ZHCS311E May   2009  – December 2024 ADS1113 , ADS1114 , ADS1115

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5.   Device Comparison Table
  6. 4 Pin Configuration and Functions
  7. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements: I2C
    7. 5.7 Typical Characteristics
  8. 6 Parameter Measurement Information
    1. 6.1 Noise Performance
  9. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Multiplexer
      2. 7.3.2 Analog Inputs
      3. 7.3.3 Full-Scale Range (FSR) and LSB Size
      4. 7.3.4 Voltage Reference
      5. 7.3.5 Oscillator
      6. 7.3.6 Output Data Rate and Conversion Time
      7. 7.3.7 Digital Comparator (ADS1114 and ADS1115 Only)
      8. 7.3.8 Conversion Ready Pin (ADS1114 and ADS1115 Only)
      9. 7.3.9 SMbus Alert Response
    4. 7.4 Device Functional Modes
      1. 7.4.1 Reset and Power-Up
      2. 7.4.2 Operating Modes
        1. 7.4.2.1 Single-Shot Mode
        2. 7.4.2.2 Continuous-Conversion Mode
      3. 7.4.3 Duty Cycling For Low Power
    5. 7.5 Programming
      1. 7.5.1 I2C Interface
        1. 7.5.1.1 I2C Address Selection
        2. 7.5.1.2 I2C General Call
        3. 7.5.1.3 I2C Speed Modes
      2. 7.5.2 Target Mode Operations
        1. 7.5.2.1 Receive Mode
        2. 7.5.2.2 Transmit Mode
      3. 7.5.3 Writing To and Reading From the Registers
      4. 7.5.4 Data Format
  10. 8 Registers
    1. 8.1 Register Map
      1. 8.1.1 Address Pointer Register (address = N/A) [reset = N/A]
      2. 8.1.2 Conversion Register (P[1:0] = 00b) [reset = 0000h]
      3. 8.1.3 Config Register (P[1:0] = 01b) [reset = 8583h]
      4. 8.1.4 Lo_thresh (P[1:0] = 10b) [reset = 8000h] and Hi_thresh (P[1:0] = 11b) [reset = 7FFFh] Registers
  11. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Basic Connections
      2. 9.1.2 Single-Ended Inputs
      3. 9.1.3 Input Protection
      4. 9.1.4 Unused Inputs and Outputs
      5. 9.1.5 Analog Input Filtering
      6. 9.1.6 Connecting Multiple Devices
      7. 9.1.7 Quick-Start Guide
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Shunt Resistor Considerations
        2. 9.2.2.2 Operational Amplifier Considerations
        3. 9.2.2.3 ADC Input Common-Mode Considerations
        4. 9.2.2.4 Resistor (R1, R2, R3, R4) Considerations
        5. 9.2.2.5 Noise and Input Impedance Considerations
        6. 9.2.2.6 First-Order RC Filter Considerations
        7. 9.2.2.7 Circuit Implementation
        8. 9.2.2.8 Results Summary
      3. 9.2.3 Application Curves
  12. 10Power Supply Recommendations
    1. 10.1 Power-Supply Sequencing
    2. 10.2 Power-Supply Decoupling
  13. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  14. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 静电放电警告
    6. 12.6 术语表
  15. 13Revision History
  16. 14Mechanical, Packaging, and Orderable Information

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5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.