ZHCSNM2A December   2021  – April 2022 ADC128S102-SEP

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Timing Diagrams
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 ADC128S102-SEP Transfer Function
      2. 7.3.2 Analog Inputs
      3. 7.3.3 Digital Inputs and Outputs
      4. 7.3.4 Radiation Environments
        1. 7.3.4.1 Total Ionizing Dose
        2. 7.3.4.2 Single Event Latch-Up
    4. 7.4 Device Functional Modes
      1. 7.4.1 ADC128S102-SEP Operation
    5. 7.5 Programming
      1. 7.5.1 Serial Interface
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 Power-Supply Sequence
    2. 9.2 Power Management
    3. 9.3 Power-Supply Noise Considerations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 接收文档更新通知
    2. 11.2 支持资源
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 术语表
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Engineering Samples

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.7 Switching Characteristics

at VA = VD = 2.7 V to 5.25 V, AGND = DGND = 0 V, fSCLK = 0.8 MHz to 16 MHz, fSAMPLE = 50 kSPS to 1 MSPS, and CL = 50 pF (unless otherwise noted); minimum and maximum values at TA = –55°C to +125°C; typical values at TA = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SPI INTERFACE TIMINGS
tEN CS falling edge to DOUT enabled 5 30 ns
tDACC DOUT access time after SCLK falling edge 17 27 ns
tDHLD DOUT hold time after SCLK falling edge 7 ns
tDIS CS rising edge to DOUT high-impedance DOUT falling 2.4 20 ns
DOUT rising 0.9 20 ns