SLPS306A May   2012  – September 2015 CSD13201W10

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD13201W10 Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Small Footprint (1 mm × 1 mm)
  • Low Profile 0.62-mm Height
  • Pb-Free
  • RoHS Compliant
  • Halogen-Free
  • Gate-Source Voltage Clamp

2 Applications

  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

Top View

CSD13201W10 IO.png

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 12 V
Qg Gate Charge Total (4.5 V) 2.3 nC
Qgd Gate Charge Gate-to-Drain 0.3 nC
RDS(on) Drain-to-Source On Resistance VGS = 1.8 V 38 mΩ
VGS = 2.5 V 29
VGS = 4.5 V 26 mΩ
VGS(th) Threshold Voltage 0.8 V

Device Information(1)

PART NUMBER PACKAGE MEDIA QTY SHIP
CSD13201W10 1 mm × 1 mm
Wafer Level Package		 7-inch reel 3000 Tape and Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 12 V
VGS Gate-to-Source Voltage ±8 V
ID Continuous Drain Current,
TA = 25°C(1) 		1.6 A
IDM Pulsed Drain Current, TA = 25°C(2) 20.2 A
PD Power Dissipation(1) 1.2 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
  1. RθJA = 105°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
  2. Pulse width ≤ 300 μs, duty cycle ≤ 2%

RDS(on) vs VGS

CSD13201W10 graph07_new.png

Gate Charge

CSD13201W10 graph04_new2.png