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TS3DS26227

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具有输入逻辑转换功能的 3.3V、2:1 (SPDT)、2 通道差分信号开关

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数据表

TS3DS26227

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产品详情

Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols MIPI Ron (typ) (Ω) 3.5 CON (typ) (pF) 10.5 ON-state leakage current (max) (µA) 0.03 Supply current (typ) (µA) 0.1 Bandwidth (MHz) 800 Operating temperature range (°C) -40 to 85 Features Break-before-make Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols MIPI Ron (typ) (Ω) 3.5 CON (typ) (pF) 10.5 ON-state leakage current (max) (µA) 0.03 Supply current (typ) (µA) 0.1 Bandwidth (MHz) 800 Operating temperature range (°C) -40 to 85 Features Break-before-make Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
DSBGA (YZT) 12 3.9375 mm² 2.25 x 1.75
  • High-Bandwidth Data Paths – Up to 800 MHz
  • Specified Break-Before-Make Switching
  • Control Inputs Reference to VIO
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 2.3-V to 3.6-V Power Supply (V+)
  • 1.65-V to 1.95-V Logic Supply (VIO)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 4000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)
  • High-Bandwidth Data Paths – Up to 800 MHz
  • Specified Break-Before-Make Switching
  • Control Inputs Reference to VIO
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 2.3-V to 3.6-V Power Supply (V+)
  • 1.65-V to 1.95-V Logic Supply (VIO)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 4000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)

The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal distortion during the transferring of a signal from one path to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable applications.

The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.

The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal distortion during the transferring of a signal from one path to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable applications.

The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.
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类型 标题 下载最新的英语版本 日期
* 数据表 High-Bandwidth Dual SPDT Differential Signal Switch With Input Logic Translation 数据表 (Rev. B) 2010年 11月 20日
应用手册 防止模拟开关的额外功耗 英语版 2008年 7月 15日
应用手册 Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日

设计和开发

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仿真模型

TS3DS26227 IBIS Model

SCEM513.ZIP (52 KB) - IBIS Model
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封装 引脚 下载
DSBGA (YZT) 12 查看选项
应遵守 TI 评估类商品的标准条款与条件。

订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

支持和培训

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