SN65LVDM31

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四路 LVDM 驱动器

产品详情

Function Driver Protocols LVDM, LVDS Number of transmitters 4 Number of receivers 0 Supply voltage (V) 3.3 Signaling rate (MBits) 150 Input signal LVCMOS Output signal LVDM Rating Catalog Operating temperature range (°C) -40 to 85
Function Driver Protocols LVDM, LVDS Number of transmitters 4 Number of receivers 0 Supply voltage (V) 3.3 Signaling rate (MBits) 150 Input signal LVCMOS Output signal LVDM Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (D) 16 59.4 mm² 9.9 x 6
  • Designed for Signaling Rates Up to 150 Mbps
  • Low-Voltage Differential Signaling With Typical Output Voltage of 700 mV and a 100- Load
  • Propagation Delay Time of 2.3 ns, Typical
  • Single 3.3-V Supply Operation
  • One Driver's Power Dissipation at 75 MHz, 50 mW, Typical
  • High-Impedance Outputs When Disabled or With VCC < 1.5 V
  • Bus-Pin ESD Protection Exceeds 12 kV
  • Low-Voltage CMOS (LVCMOS) Logic Input Levels Are 5-V Tolerant

The signaling rate is the number of voltage transitions that can be made per second.

  • Designed for Signaling Rates Up to 150 Mbps
  • Low-Voltage Differential Signaling With Typical Output Voltage of 700 mV and a 100- Load
  • Propagation Delay Time of 2.3 ns, Typical
  • Single 3.3-V Supply Operation
  • One Driver's Power Dissipation at 75 MHz, 50 mW, Typical
  • High-Impedance Outputs When Disabled or With VCC < 1.5 V
  • Bus-Pin ESD Protection Exceeds 12 kV
  • Low-Voltage CMOS (LVCMOS) Logic Input Levels Are 5-V Tolerant

The signaling rate is the number of voltage transitions that can be made per second.

The SN65LVDM31 incorporates four differential line drivers that implement the electrical characteristics of low-voltage differential signaling. This product offers a low-power alternative to 5-V PECL drivers with similar signal levels. Any of the four current-mode drivers will deliver a minimum differential output voltage magnitude of 540 mV into a 100- load when enabled by either an active-low or active-high enable input.

The intended application of this device and signaling technique is for both point-to-point and multiplexed baseband data transmission over controlled impedance media of approximately 100 . The transmission media may be printed-circuit board traces, backplanes, or cables. The ultimate rate and distance of data transfer is dependent upon the attenuation characteristics of the media and the noise coupling to the environment.

The SN65LVDM31 is characterized for operation from -40°C to 85°C.

The SN65LVDM31 incorporates four differential line drivers that implement the electrical characteristics of low-voltage differential signaling. This product offers a low-power alternative to 5-V PECL drivers with similar signal levels. Any of the four current-mode drivers will deliver a minimum differential output voltage magnitude of 540 mV into a 100- load when enabled by either an active-low or active-high enable input.

The intended application of this device and signaling technique is for both point-to-point and multiplexed baseband data transmission over controlled impedance media of approximately 100 . The transmission media may be printed-circuit board traces, backplanes, or cables. The ultimate rate and distance of data transfer is dependent upon the attenuation characteristics of the media and the noise coupling to the environment.

The SN65LVDM31 is characterized for operation from -40°C to 85°C.

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技术文档

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类型 标题 下载最新的英语版本 日期
* 数据表 High Speed Differential Line Driver 数据表 (Rev. C) 2002年 2月 6日
应用手册 AN-1926:M-LVDS 简介及其时钟和数据分配应用 (Rev. C) PDF | HTML 英语版 (Rev.C) PDF | HTML 2023年 7月 5日
应用简报 How Far, How Fast Can You Operate MLVDS? 2018年 8月 6日
用户指南 Low Voltage Differential Signaling (LVDS) Evaluation Module (EVM) for Quad Drive (Rev. C) 2010年 2月 16日
应用手册 SPI-Based Data Acquisition/Monitor Using the TLC2551 Serial ADC (Rev. A) 2001年 11月 20日
应用手册 An Overview of LVDS Technology 1998年 10月 5日

设计和开发

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仿真模型

SN65LVDM31 IBIS Model

SLLC092.ZIP (4 KB) - IBIS Model
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英语版 (Rev.A): PDF
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包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
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  • 封装厂地点

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