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低侧驱动器

SM72482

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双通道 5A 复合栅极驱动器

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SM72482 处于停产状态
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UCC27624 正在供货 具有 4V UVLO、30V VDD 和低传播延迟的 5A/5A 双通道栅极驱动器 Replacement

SM72482

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产品详情

Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features PFET Drive Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual, Independent
Number of channels 2 Power switch MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 3.5 Input supply voltage (max) (V) 14 Features PFET Drive Capability Operating temperature range (°C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Propagation delay time (µs) 0.025 Input threshold TTL Channel input logic Combination, Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (typ) (V) 3 Driver configuration Dual, Independent
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Renewable Energy Grade
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A Sink, 3A Source Current Capability
  • Two Channels Can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns Rise, 12 ns Fall With 2 nF Load)
  • Available in Dual Noninverting, Dual Inverting, and Combination Configurations
  • Supply Rail Under-Voltage Lockout Protection (UVLO)
  • SM72482 UVLO Configured to Drive PFET Through OUT_A and NFET Through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers
  • Packages
    • SOIC
    • Thermally Enhanced VSSOP

All trademarks are the property of their respective owners.

  • Renewable Energy Grade
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A Sink, 3A Source Current Capability
  • Two Channels Can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25 ns Typical)
  • Fast Rise and Fall Times (14 ns Rise, 12 ns Fall With 2 nF Load)
  • Available in Dual Noninverting, Dual Inverting, and Combination Configurations
  • Supply Rail Under-Voltage Lockout Protection (UVLO)
  • SM72482 UVLO Configured to Drive PFET Through OUT_A and NFET Through OUT_B
  • Pin Compatible With Industry Standard Gate Drivers
  • Packages
    • SOIC
    • Thermally Enhanced VSSOP

All trademarks are the property of their respective owners.

The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.

The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package.
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类型 标题 下载最新的英语版本 日期
* 数据表 SM72482 Dual 5A Compound Gate Driver 数据表 (Rev. C) 2013年 4月 1日
更多文献资料 Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 2018年 10月 29日
更多文献资料 MOSFET 和 IGBT 栅极驱动器电路的基本原理 最新英语版本 (Rev.A) 2018年 4月 17日

设计和开发

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模拟工具

PSPICE-FOR-TI — 适用于 TI 设计和模拟工具的 PSpice®

PSpice® for TI 可提供帮助评估模拟电路功能的设计和仿真环境。此功能齐全的设计和仿真套件使用 Cadence® 的模拟分析引擎。PSpice for TI 可免费使用，包括业内超大的模型库之一，涵盖我们的模拟和电源产品系列以及精选的模拟行为模型。

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参考设计

PMP9461 — 用于 Solar Microinverter 的 DC/DC 和 DC/AC 块的完整门驱动和偏置电源解决方案

PMP9461 是适合并网太阳能微型逆变器的参考设计，有完整的功率和栅极驱动器要求。此参考设计的主要目标是在栅极驱动器以及微型逆变器的偏置电源段实现集成度和性能的显著增强。此解决方案具有 SM72295（带集成电流传感的全桥栅极驱动器）、SM74101（7A 灌电流/3A 拉电流单驱动器）、SM72482（5A 双低侧驱动器）、LM5017（提供初级和次级偏置电源）以及用于在逆变器的直流/交流部分为驱动器供电的 LM5017。所有偏置电源均使用经济高效的 Fly-BuckTM 拓扑生成。
测试报告: PDF
原理图: PDF
封装 引脚 下载
SOIC (D) 8 查看选项
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订购和质量

包含信息：
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息：
  • 制造厂地点
  • 封装厂地点

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