LM5113-Q1 (正在供货)

用于增强模式 GaN FET 的汽车类 100V、1.2A/5A 半桥栅极驱动器

用于增强模式 GaN FET 的汽车类 100V、1.2A/5A 半桥栅极驱动器 - LM5113-Q1


The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.

In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.


  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: -40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 1C
    • Device CDM ESD Classification Level C6
  • Independent High-Side and Low-Side
    TTL Logic Inputs
  • 1.2-A Peak Source, 5-A Peak Sink Output Current
  • High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
  • Internal Bootstrap Supply Voltage Clamping
  • Split Outputs for Adjustable
    Turnon and Turnoff Strength
  • 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
  • Fast Propagation Times (28 ns Typical)
  • Excellent Propagation Delay Matching
    (1.5 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption

All trademarks are the property of their respective owners.


参数 与其它产品相比 GaN FET 驱动器

Driver Configuration
Number of Channels (#)
Power Switch
Bus Voltage (V)
Peak Output Current (A)
Input VCC (Min) (V)
Input VCC (Max) (V)
Rise Time (ns)
Fall Time (ns)
Prop Delay (ns)
Input Threshold
Operating Temperature Range (C)
Package Group
Package Size: mm2:W x L (PKG)
LM5113-Q1 LMG1020 LMG1205 LMG1210
Dual Independent    Low side GaN Driver    Dual, Independent    Half Bridge   
2    1    2    2   
90      90    200   
5    7    5    3   
4.5    4.75    4.5    6   
5.5    5.25    5.5    18   
7    0.21    7    0.5   
3.5    0.21    3.5    0.5   
30    2.5    35    10   
TTL    TTL    TTL    TTL   
Automotive    Catalog    Catalog    Catalog   
-40 to 125    -40 to 125    -40 to 125    -40 to 125   
See datasheet (WSON)    See datasheet (DSBGA)    See datasheet (DSBGA)    19WQFN: 12 mm2: 4 x 3(WQFN)   

其它合格版本 LM5113-Q1

版本 器件型号 定义
目录 LM5113 TI 的标准目录产品