INA116 不推荐用于新设计
该产品会持续为现有客户提供。新设计应考虑替代产品。
open-in-new 比较替代产品
功能与比较器件相似
INA121 正在供货 FET 输入低功耗仪表放大器 INA121 has lower offset and higher CMRR, with half the power consumption
INA819 正在供货 具有 ±60V 过压保护功能(增益引脚 2、3)的低功耗 (350µA)、精密仪表放大器 INA121 has lower offset and higher CMRR, with half the power consumption

产品详情

Number of channels 1 Vs (max) (V) 36 Vs (min) (V) 9 Input offset (±) (max) (µV) 2000 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 1000 Noise at 1 kHz (typ) (nV√Hz) 28 CMRR (min) (dB) 86 Input offset drift (±) (max) (µV/°C) 5 Input bias current (±) (max) (nA) 0.000025 Iq (typ) (mA) 1 Bandwidth at min gain (typ) (MHz) 0.8 Gain error (±) (max) (%) 0.7 Operating temperature range (°C) -40 to 85 Rating Catalog Type Resistor Gain nonlinearity (±) (max) (%) 0.005 Output swing headroom (to negative supply) (typ) (V) 0.2 Output swing headroom (to positive supply) (typ) (V) -0.7 Input common mode headroom (to negative supply) (typ) (V) 2.4 Input common mode headroom (to positive supply) (typ) (V) -2 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 2
Number of channels 1 Vs (max) (V) 36 Vs (min) (V) 9 Input offset (±) (max) (µV) 2000 Voltage gain (min) (V/V) 1 Voltage gain (max) (V/V) 1000 Noise at 1 kHz (typ) (nV√Hz) 28 CMRR (min) (dB) 86 Input offset drift (±) (max) (µV/°C) 5 Input bias current (±) (max) (nA) 0.000025 Iq (typ) (mA) 1 Bandwidth at min gain (typ) (MHz) 0.8 Gain error (±) (max) (%) 0.7 Operating temperature range (°C) -40 to 85 Rating Catalog Type Resistor Gain nonlinearity (±) (max) (%) 0.005 Output swing headroom (to negative supply) (typ) (V) 0.2 Output swing headroom (to positive supply) (typ) (V) -0.7 Input common mode headroom (to negative supply) (typ) (V) 2.4 Input common mode headroom (to positive supply) (typ) (V) -2 Noise at 0.1 Hz to 10 Hz (typ) (µVPP) 2
PDIP (N) 16 181.42 mm² 19.3 x 9.4 SOIC (DW) 16 106.09 mm² 10.3 x 10.3
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类型 标题 下载最新的英语版本 日期
* 数据表 Ultra Low Input Bias Current Instrumentation Amplifier 数据表 2000年 9月 27日

订购和质量

包含信息:
  • RoHS
  • REACH
  • 器件标识
  • 引脚镀层/焊球材料
  • MSL 等级/回流焊峰值温度
  • MTBF/时基故障估算
  • 材料成分
  • 鉴定摘要
  • 持续可靠性监测
包含信息:
  • 制造厂地点
  • 封装厂地点