CSD18511KTT 40V N 沟道 NexFET 功率 MOSFET | 德州仪器 TI.com.cn

CSD18511KTT (正在供货)

40V N 沟道 NexFET 功率 MOSFET

40V N 沟道 NexFET 功率 MOSFET - CSD18511KTT
数据表
 

描述

This 40-V, 2.1-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.



特性

  • Low Qg and Qgd
  • Low RDS(ON)
  • Low-Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

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参数 与其它产品相比 N沟道MOSFET晶体管

 
VDS (V)
Configuration
Rds(on) max at VGS=4.5 V (mOhms)
Rds(on) max at VGS=10 V (mOhms)
IDM, max pulsed drain current (Max) (A)
QG typ (nC)
QGD typ (nC)
Package (mm)
VGS (V)
VGSTH typ (V)
ID, silicon limited at Tc=25degC (A)
ID, package limited (A)
Logic level
Rating
CSD18511KTT CSD18510KTT
40     40    
Single     Single    
4.2     2.6    
2.6     1.7    
400     400    
64     119    
9.7     21    
D2PAK     D2PAK    
20     20    
1.8     1.7    
194     274    
110     200    
Yes     Yes    
Catalog     Catalog