UCC21710-Q1 具有高级保护功能的 ±10A SiC/IGBT 隔离式栅极驱动器 | 德州仪器 TI.com.cn

UCC21710-Q1 (预发布)

具有高级保护功能的 ±10A SiC/IGBT 隔离式栅极驱动器

 

Sample availability and more information

Preproduction samples are available (PUCC21710QDWQ1). Request now

Full data sheet, EVM user's guide, and PSpice model are available. Request now

描述

The UCC21710-Q1 is a galvanic isolated single channel gate drivers designed for up to 1700V SiC MOSFETs and IGBTs with advanced protection features, best-in-class dynamic performance and robustness.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5-kVRMS working voltage, 12.8-kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew and high CMTI.

特性

  • Single channel SiC/IGBT isolated gate driver
  • AEC-Q100 qualified for automotive applications (qualification planned)
  • SiC MOSFETs and IGBTs up to 1700 V
  • 33-V maximum output drive voltage (VDD-COM)
  • High peak drive current and high CMTI
  • Active miller clamp
  • UVLO with power good on RDY
  • Small propagation delay and pulse/part skew
  • Operating temperature range –40°C to 125°C
  • Safety-related certifications (planned):
    • 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-11 (VDE V 0884-11): 2017-01
    • 5700-VRMS Isolation for 1 Minute per UL1577

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参数

与其它产品相比 隔离栅极驱动器 邮件 下载到电子表格中
Part number 立即下单 Isolation rating (Vrms) DIN V VDE V 0884-10 transient overvoltage rating (Vpk) DIN V VDE V 0884-10 working voltage (Vpk) Number of channels (#) Power switch Enable/disable function Output VCC/VDD (Max) (V) Output VCC/VDD (Min) (V) Input VCC (Min) (V) Input VCC (Max) (V) Peak output current (A) Prop delay (ns) Operating temperature range (C) Package Group
UCC21710-Q1 立即下单 5700     8400     2121     1     IGBT
SiCFET    
  33     13     3     5.5     10     90     -40 to 125     SOIC | 16    
ISO5451-Q1 立即下单 5700     8000     1420     1     IGBT    
   
30     15     3     5.5     5     76     -40 to 125     SOIC | 16    
ISO5452-Q1 立即下单 5700     8000     1420     1     IGBT
SiCFET    
   
30     15     2.25     5.5     5     76     -40 to 125     SOIC | 16    
ISO5851-Q1 立即下单 5700     8000     2121     1     IGBT    
   
30     15     3     5.5     5     76     -40 to 125     SOIC | 16    
ISO5852S-Q1 立即下单 5700     8000     2121     1     IGBT
SiCFET    
   
30     15     2.25     5.5     5     76     -40 to 125     SOIC | 16