ZHCSGN1 August   2017 TUSB212-Q1

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 EQ
      2. 7.3.2 DC BOOST
    4. 7.4 Device Functional Modes
      1. 7.4.1 Low Speed (LS) Mode
      2. 7.4.2 Full Speed (FS) Mode
      3. 7.4.3 High Speed (HS) Mode
      4. 7.4.4 Shutdown Mode
      5. 7.4.5 I2C Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Test Procedure to Construct USB High Speed Eye Diagram
          1. 8.2.2.1.1 For a Host Side Application
          2. 8.2.2.1.2 For a Device Side Application
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 文档支持
    2. 11.2 接收文档更新通知
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply Voltage Range VCC -0.3 3.8 V
Voltage Range on I/O pins DxP, DxM, RSTN, EQ, SCL, SDA, DC_BOOST, VREG -0.3 3.8 V
Tstg Storage temperature -65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC Supply voltage 3 3.3 3.6 V
TA Ambient temperature TUSB212Q1 -40 105 °C
TJ Junction temperature TUSB212Q1 -40 105 °C

6.4 Thermal Information

THERMAL METRIC(1) UNIT
RWB (VQFN)
12 PINS
RθJA Junction-to-ambient thermal resistance 137.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 62 °C/W
RθJB Junction-to-board thermal resistance 67.2 °C/W
ΨJT Junction-to-top characterization parameter 1.9 °C/W
ΨJB Junction-to-board characterization parameter 67.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER
IACTIVE_HS High-speed active curent USB channel = HS mode; 480 Mbps traffic; VCC = 3.3V; VCC supply stable; DC Boost = 60 mV 22 30 mA
IIDLE_HS High-speed idle current USB channel = HS mode; no traffic; VCC = 3.3V; VCC supply stable; DC Boost = 60 mV 14 22 mA
ISUSPEND_HS High-speed suspend current USB channel = HS suspend mode; VCC = 3.3V; VCC supply stable 0.55 1.5 mA
IFS_LS Full/Low speed current USB channel = FS mode or LS mode; VCC = 3.3V 0.6 1.5 mA
IDISCONNECT Disconnect current Host side application; No device attachment; VCC = 3.3V 0.7 1.5 mA
IRSTN Disable current RSTN driven low; VCC supply stable; VCC = 3.3V 13 80 µA
ILKG_FS Pin fail-safe leakage current for SDA, SCL, DC_BOOST, DxP/N, RSTN VCC = 0 V; Pin at 3.6 V 40 µA
RSTN
VIH High-level input voltage 2 3.6 V
VIL Low-level input voltage 0 0.8 V
IIH High-level input current VIH = 3.6 V -4 4 µA
IIL Low-level input current VIL = 0 V -11 11 µA
EQ
REQ External pull-down resistor on EQ pin. AC Boost Level 0 160 Ω
AC Boost Level 1 1.4 2 kΩ
AC Boost Level 2 3.7 3.9 kΩ
AC Boost Level 3 6 kΩ
CD, ENA_HS
VOH High-level output voltage IO = -50µA 2.4 V
VOL Low-level output voltage IO = 50µA 0.4 V
SCL, SDA
CI2CBUS I2C Bus capacitance 4 150 pF
DC_BOOST
VIH High-level input voltage 2.4 3.6 V
VIM Mid-level input voltage 1.6 V
VIL Low-level input voltage 0 0.4 V
DxP, DxM
CIO_DXX Capacitance to GND Measured with LCR meter and device powered down. 1 MHz sinusoid, 30 mVpp ripple 2.4 pF

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
FBR_DXX DxP/M Bit Rate USB channel = HS mode; 480 Mbps traffic; VCC supply stable 480.24 Mbps
tRISE_DXX DxP/M rise time 100 ps
tFALL_DXX DxP/M fall time 100 ps
tRSTN_PULSE_WIDTH Minimum width to detect a valid RSTN signal assert when the pin is actively driven VCC = 3.0 V; Refer to Figure 1 20 µs
tSTABLE VCC stable before RSTN de-assertion  Refer to Figure 1 100 µs
tVCC_RAMP VCC ramp time 0.2 100 ms
TUSB212-Q1 timing-01-sllsex5.gif Figure 1. Power On and Reset Timing

6.7 Typical Characteristics

TUSB212-Q1 sllsex6_2mpost_without.gif Figure 2. USB2.0 HS Eye Diagram, Host far-end with 2m cable post-channel loss without TUSB212-Q1
TUSB212-Q1 tc_host_eye_5m_sllsex6.png Figure 4. USB2.0 HS Eye Diagram, Host far-end with 5m cable pre-channel loss without TUSB212-Q1
TUSB212-Q1 sllsex6_2mpost_with.gif Figure 3. USB 2.0 HS Eye Diagram, Host far-end with 2m cable post-channel loss with TUSB212-Q1
TUSB212-Q1 tc_tusb213_eye_5m_sllsex6.png Figure 5. USB2.0 HS Eye Diagram, Host far-end with 5m cable pre-channel loss with TUSB212-Q1